JPS5694659A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5694659A
JPS5694659A JP17073379A JP17073379A JPS5694659A JP S5694659 A JPS5694659 A JP S5694659A JP 17073379 A JP17073379 A JP 17073379A JP 17073379 A JP17073379 A JP 17073379A JP S5694659 A JPS5694659 A JP S5694659A
Authority
JP
Japan
Prior art keywords
film
substrate
capacitor
polycrystalline
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17073379A
Other languages
Japanese (ja)
Inventor
Makoto Hirayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17073379A priority Critical patent/JPS5694659A/en
Publication of JPS5694659A publication Critical patent/JPS5694659A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To increase the capacity of a capacitor by mixing impurities in an SiO2 insulation film constituting the capacitor and thereby raising specific inductive capacity in the case when MOSFET and the MOS diode type capacitor are formed integrally into IC on the same semiconductor substrate. CONSTITUTION:A thick field oxidized film 7 is formed around the Si substrate 6 and a thin gate SiO2 film 10a is connected to the surface of the substrate 6 surrounded by the film 7. In this constitution, boron ions 18 as impurities are struck into the film 10a after it is formed and thereby the specific inductive capacity of the film 10a is increased. That is, B2H6 of 1-10% is added to O2 ambience when the film 10a is formed. After that, the 1st polycrystalline Si electrode which is to be the capacitor 2 is formed and further the 2nd polycrystalline Si substrate 4 is provided with a part thereof overlapping on the former, through the intermediary of an oxidized insulation film 10b. Then, an opening is made in the film 10a contacting with the substrate 4 and an N<+> type region 5 to form a bit line is formed diffusely.
JP17073379A 1979-12-27 1979-12-27 Semiconductor memory device Pending JPS5694659A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17073379A JPS5694659A (en) 1979-12-27 1979-12-27 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17073379A JPS5694659A (en) 1979-12-27 1979-12-27 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5694659A true JPS5694659A (en) 1981-07-31

Family

ID=15910373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17073379A Pending JPS5694659A (en) 1979-12-27 1979-12-27 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5694659A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094761A (en) * 1983-10-28 1985-05-27 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094761A (en) * 1983-10-28 1985-05-27 Fujitsu Ltd Manufacture of semiconductor device

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