JPS5684462A - Plasma nitriding method - Google Patents

Plasma nitriding method

Info

Publication number
JPS5684462A
JPS5684462A JP15992179A JP15992179A JPS5684462A JP S5684462 A JPS5684462 A JP S5684462A JP 15992179 A JP15992179 A JP 15992179A JP 15992179 A JP15992179 A JP 15992179A JP S5684462 A JPS5684462 A JP S5684462A
Authority
JP
Japan
Prior art keywords
nitride
nitrided
activated
energy
inductive energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15992179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6356311B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP15992179A priority Critical patent/JPS5684462A/ja
Publication of JPS5684462A publication Critical patent/JPS5684462A/ja
Publication of JPS6356311B2 publication Critical patent/JPS6356311B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP15992179A 1979-12-10 1979-12-10 Plasma nitriding method Granted JPS5684462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15992179A JPS5684462A (en) 1979-12-10 1979-12-10 Plasma nitriding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15992179A JPS5684462A (en) 1979-12-10 1979-12-10 Plasma nitriding method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP16618582A Division JPS5884107A (ja) 1982-09-24 1982-09-24 プラズマ窒化法

Publications (2)

Publication Number Publication Date
JPS5684462A true JPS5684462A (en) 1981-07-09
JPS6356311B2 JPS6356311B2 (enrdf_load_stackoverflow) 1988-11-08

Family

ID=15704057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15992179A Granted JPS5684462A (en) 1979-12-10 1979-12-10 Plasma nitriding method

Country Status (1)

Country Link
JP (1) JPS5684462A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177342A (en) * 1981-04-23 1982-11-01 Toshiba Corp Plasma treating apparatus of powder
JPS5884107A (ja) * 1982-09-24 1983-05-20 Shunpei Yamazaki プラズマ窒化法
JPS58210626A (ja) * 1982-06-01 1983-12-07 Mitsubishi Electric Corp 窒化シリコン膜形成装置
JPS625641A (ja) * 1985-04-09 1987-01-12 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン 低温プラズマ窒化方法及びその際に形成される窒化膜の適用
JPS62141727A (ja) * 1985-12-16 1987-06-25 Matsushita Electric Ind Co Ltd 化合物半導体装置の製造方法
JPH08116017A (ja) * 1994-10-14 1996-05-07 Nec Corp 半導体集積回路装置用リードフレーム及びその製造方法
KR100345809B1 (ko) * 1999-09-14 2002-07-27 주식회사 케이피티 알루미늄 압출금형의 플라즈마 질화처리 방법
KR100661130B1 (ko) 2006-01-20 2006-12-22 한국생산기술연구원 포스트 플라즈마를 이용한 스테인리스 스틸 질화방법
JP2007288069A (ja) * 2006-04-19 2007-11-01 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2011119747A (ja) * 2000-03-13 2011-06-16 Foundation For Advancement Of International Science 窒化膜の形成方法、酸窒化膜の形成方法、窒化膜のスパッタリング方法、ゲート絶縁膜の形成方法
JP2014156644A (ja) * 2013-02-18 2014-08-28 Jfe Steel Corp 方向性電磁鋼板の窒化処理設備および窒化処理方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177342A (en) * 1981-04-23 1982-11-01 Toshiba Corp Plasma treating apparatus of powder
JPS58210626A (ja) * 1982-06-01 1983-12-07 Mitsubishi Electric Corp 窒化シリコン膜形成装置
JPS5884107A (ja) * 1982-09-24 1983-05-20 Shunpei Yamazaki プラズマ窒化法
JPS625641A (ja) * 1985-04-09 1987-01-12 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン 低温プラズマ窒化方法及びその際に形成される窒化膜の適用
JPS62141727A (ja) * 1985-12-16 1987-06-25 Matsushita Electric Ind Co Ltd 化合物半導体装置の製造方法
JPH08116017A (ja) * 1994-10-14 1996-05-07 Nec Corp 半導体集積回路装置用リードフレーム及びその製造方法
KR100345809B1 (ko) * 1999-09-14 2002-07-27 주식회사 케이피티 알루미늄 압출금형의 플라즈마 질화처리 방법
JP2011119747A (ja) * 2000-03-13 2011-06-16 Foundation For Advancement Of International Science 窒化膜の形成方法、酸窒化膜の形成方法、窒化膜のスパッタリング方法、ゲート絶縁膜の形成方法
KR100661130B1 (ko) 2006-01-20 2006-12-22 한국생산기술연구원 포스트 플라즈마를 이용한 스테인리스 스틸 질화방법
JP2007288069A (ja) * 2006-04-19 2007-11-01 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2014156644A (ja) * 2013-02-18 2014-08-28 Jfe Steel Corp 方向性電磁鋼板の窒化処理設備および窒化処理方法

Also Published As

Publication number Publication date
JPS6356311B2 (enrdf_load_stackoverflow) 1988-11-08

Similar Documents

Publication Publication Date Title
JPS5684462A (en) Plasma nitriding method
GB2272995B (en) Method for making or treating a semiconductor
KR890004407A (ko) 레지스트 마스크 박리 방법
KR920008852A (ko) 박막의 형성방법 및 반도체장치
TW200500491A (en) Method for energy-assisted atomic layer deposition and removal
TW200514866A (en) Processing apparatus and method
JPS6417870A (en) Manufacture of carbon
JPS5747876A (en) Plasma etching apparatus and method
JPS55110032A (en) Method for high-frequency heated epitaxial growth
JPS5514839A (en) Treating method for ion nitriding
SE8902391D0 (sv) Foerfarande jaemte anordning foer att behandla kiselplattor
JPS6450429A (en) Formation of insulating film
US4212687A (en) Ion-nitriting process
KR900002086B1 (en) Heat treatment method of compound semiconductor wafer
JPS5638464A (en) Formation of nitride film
JPS56116869A (en) Inductive reduced pressure gaseous phase method
KR910003767A (ko) 열처리 장치
JPS5767009A (en) Formation of film
JPS53144891A (en) Method and apparatus for production of inorganic compound
JPS572585A (en) Forming method for aluminum electrode
JPS57202744A (en) Manufacture of semiconductor device
JPS56138916A (en) Formation of amorphous thin film
JPS57101671A (en) Plasma etching apparatus
JPS5477573A (en) Operating method of plasma treating apparatus
JPS5773175A (en) Chemical vapor deposition device