JPS6356311B2 - - Google Patents

Info

Publication number
JPS6356311B2
JPS6356311B2 JP54159921A JP15992179A JPS6356311B2 JP S6356311 B2 JPS6356311 B2 JP S6356311B2 JP 54159921 A JP54159921 A JP 54159921A JP 15992179 A JP15992179 A JP 15992179A JP S6356311 B2 JPS6356311 B2 JP S6356311B2
Authority
JP
Japan
Prior art keywords
silicon
nitride
temperature
nitrided
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54159921A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5684462A (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP15992179A priority Critical patent/JPS5684462A/ja
Publication of JPS5684462A publication Critical patent/JPS5684462A/ja
Publication of JPS6356311B2 publication Critical patent/JPS6356311B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Powder Metallurgy (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
JP15992179A 1979-12-10 1979-12-10 Plasma nitriding method Granted JPS5684462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15992179A JPS5684462A (en) 1979-12-10 1979-12-10 Plasma nitriding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15992179A JPS5684462A (en) 1979-12-10 1979-12-10 Plasma nitriding method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP16618582A Division JPS5884107A (ja) 1982-09-24 1982-09-24 プラズマ窒化法

Publications (2)

Publication Number Publication Date
JPS5684462A JPS5684462A (en) 1981-07-09
JPS6356311B2 true JPS6356311B2 (enrdf_load_stackoverflow) 1988-11-08

Family

ID=15704057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15992179A Granted JPS5684462A (en) 1979-12-10 1979-12-10 Plasma nitriding method

Country Status (1)

Country Link
JP (1) JPS5684462A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007288069A (ja) * 2006-04-19 2007-11-01 Hitachi Kokusai Electric Inc 半導体装置の製造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177342A (en) * 1981-04-23 1982-11-01 Toshiba Corp Plasma treating apparatus of powder
JPS58210626A (ja) * 1982-06-01 1983-12-07 Mitsubishi Electric Corp 窒化シリコン膜形成装置
JPS5884107A (ja) * 1982-09-24 1983-05-20 Shunpei Yamazaki プラズマ窒化法
JPS625641A (ja) * 1985-04-09 1987-01-12 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン 低温プラズマ窒化方法及びその際に形成される窒化膜の適用
JPH0719776B2 (ja) * 1985-12-16 1995-03-06 松下電器産業株式会社 化合物半導体装置の製造方法
JP2576799B2 (ja) * 1994-10-14 1997-01-29 日本電気株式会社 半導体集積回路装置用リードフレーム及びその製造方法
KR100345809B1 (ko) * 1999-09-14 2002-07-27 주식회사 케이피티 알루미늄 압출금형의 플라즈마 질화처리 방법
KR100760078B1 (ko) * 2000-03-13 2007-09-18 다다히로 오미 산화막의 형성 방법, 질화막의 형성 방법, 산질화막의 형성 방법, 산화막의 스퍼터링 방법, 질화막의 스퍼터링 방법, 산질화막의 스퍼터링 방법, 게이트 절연막의 형성 방법
KR100661130B1 (ko) 2006-01-20 2006-12-22 한국생산기술연구원 포스트 플라즈마를 이용한 스테인리스 스틸 질화방법
JP5942884B2 (ja) * 2013-02-18 2016-06-29 Ｊｆｅスチール株式会社 方向性電磁鋼板の窒化処理設備および窒化処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007288069A (ja) * 2006-04-19 2007-11-01 Hitachi Kokusai Electric Inc 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS5684462A (en) 1981-07-09

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