JPS5683077A - High tension mos field-effect transistor - Google Patents

High tension mos field-effect transistor

Info

Publication number
JPS5683077A
JPS5683077A JP16069379A JP16069379A JPS5683077A JP S5683077 A JPS5683077 A JP S5683077A JP 16069379 A JP16069379 A JP 16069379A JP 16069379 A JP16069379 A JP 16069379A JP S5683077 A JPS5683077 A JP S5683077A
Authority
JP
Japan
Prior art keywords
region
source
conductor
drain
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16069379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6350872B2 (enrdf_load_stackoverflow
Inventor
Kiyotoshi Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16069379A priority Critical patent/JPS5683077A/ja
Priority to DE3046749A priority patent/DE3046749C2/de
Publication of JPS5683077A publication Critical patent/JPS5683077A/ja
Priority to US06/655,638 priority patent/US4614959A/en
Publication of JPS6350872B2 publication Critical patent/JPS6350872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP16069379A 1979-12-10 1979-12-10 High tension mos field-effect transistor Granted JPS5683077A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP16069379A JPS5683077A (en) 1979-12-10 1979-12-10 High tension mos field-effect transistor
DE3046749A DE3046749C2 (de) 1979-12-10 1980-12-10 MOS-Transistor für hohe Betriebsspannungen
US06/655,638 US4614959A (en) 1979-12-10 1984-09-28 Improved high voltage MOS transistor with field plate layers for preventing reverse field plate effect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16069379A JPS5683077A (en) 1979-12-10 1979-12-10 High tension mos field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5683077A true JPS5683077A (en) 1981-07-07
JPS6350872B2 JPS6350872B2 (enrdf_load_stackoverflow) 1988-10-12

Family

ID=15720418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16069379A Granted JPS5683077A (en) 1979-12-10 1979-12-10 High tension mos field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5683077A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087577A (en) * 1990-06-05 1992-02-11 Siemens Aktiengesellschaft Manufacturing method for a power misfet
US6172400B1 (en) * 1998-04-27 2001-01-09 Spectrian Corporation MOS transistor with shield coplanar with gate electrode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53980A (en) * 1977-07-13 1978-01-07 Hitachi Ltd Field-effect transistor of high dielectric strength

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53980A (en) * 1977-07-13 1978-01-07 Hitachi Ltd Field-effect transistor of high dielectric strength

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087577A (en) * 1990-06-05 1992-02-11 Siemens Aktiengesellschaft Manufacturing method for a power misfet
US6172400B1 (en) * 1998-04-27 2001-01-09 Spectrian Corporation MOS transistor with shield coplanar with gate electrode

Also Published As

Publication number Publication date
JPS6350872B2 (enrdf_load_stackoverflow) 1988-10-12

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