JPS5681978A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5681978A
JPS5681978A JP15807379A JP15807379A JPS5681978A JP S5681978 A JPS5681978 A JP S5681978A JP 15807379 A JP15807379 A JP 15807379A JP 15807379 A JP15807379 A JP 15807379A JP S5681978 A JPS5681978 A JP S5681978A
Authority
JP
Japan
Prior art keywords
layers
layer
thyristor
forming
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15807379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6152586B2 (enrdf_load_stackoverflow
Inventor
Tatsuo Yamazaki
Shuroku Sakurada
Katsumi Akabane
Isao Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Minebea Power Semiconductor Device Inc
Original Assignee
Hitachi Ltd
Hitachi Haramachi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Haramachi Electronics Ltd filed Critical Hitachi Ltd
Priority to JP15807379A priority Critical patent/JPS5681978A/ja
Publication of JPS5681978A publication Critical patent/JPS5681978A/ja
Publication of JPS6152586B2 publication Critical patent/JPS6152586B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
JP15807379A 1979-12-07 1979-12-07 Thyristor Granted JPS5681978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15807379A JPS5681978A (en) 1979-12-07 1979-12-07 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15807379A JPS5681978A (en) 1979-12-07 1979-12-07 Thyristor

Publications (2)

Publication Number Publication Date
JPS5681978A true JPS5681978A (en) 1981-07-04
JPS6152586B2 JPS6152586B2 (enrdf_load_stackoverflow) 1986-11-13

Family

ID=15663698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15807379A Granted JPS5681978A (en) 1979-12-07 1979-12-07 Thyristor

Country Status (1)

Country Link
JP (1) JPS5681978A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193169A (ja) * 1987-10-02 1989-04-12 Semiconductor Res Found 電力用半導体素子
US5093705A (en) * 1985-06-28 1992-03-03 Siemens Aktiengesellschaft Thyristor with reduced central zone thickness

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5093705A (en) * 1985-06-28 1992-03-03 Siemens Aktiengesellschaft Thyristor with reduced central zone thickness
JPH0193169A (ja) * 1987-10-02 1989-04-12 Semiconductor Res Found 電力用半導体素子

Also Published As

Publication number Publication date
JPS6152586B2 (enrdf_load_stackoverflow) 1986-11-13

Similar Documents

Publication Publication Date Title
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS51135373A (en) Semiconductor device
JPS5681978A (en) Thyristor
JPS56165359A (en) Semiconductor device
JPS5656632A (en) Manufacture of semiconductor element
JPS57196569A (en) Bidirectional thyristor
JPS54111287A (en) Resin seal planar-structure semiconductor element
JPS54109386A (en) Manufacture for silicon symmetrical switch
JPS54100675A (en) Three-terminal two-way thyristor
JPS52129380A (en) Semiconductor device
JPS5329679A (en) Junction type field effect semiconductor device
JPS5688361A (en) Static induction type reverse conductivity thyristor
JPS538574A (en) Lateral thyristor
JPS5317286A (en) Production of semiconductor device
JPS52117063A (en) Preparation of ohmic ontact layer in semiconductor device
JPS5513953A (en) Complementary integrated circuit
JPS5688376A (en) Schottky barrier diode with p-n junction
JPS54144887A (en) Control rectifying element
JPS5666070A (en) Bidirectional diode thyristor
JPS55125678A (en) Zener diode
JPS5642337A (en) Formation of electrode on semiconductor element
JPS5669855A (en) Semiconductor device and its manufacture
JPS5244567A (en) Planer type semiconductor
JPS538585A (en) Injection type laser
JPS56147467A (en) Cmos semiconductor device and manufacture thereof