JPS568876A - Triac - Google Patents
TriacInfo
- Publication number
- JPS568876A JPS568876A JP8359579A JP8359579A JPS568876A JP S568876 A JPS568876 A JP S568876A JP 8359579 A JP8359579 A JP 8359579A JP 8359579 A JP8359579 A JP 8359579A JP S568876 A JPS568876 A JP S568876A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layers
- triac
- conductive path
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To improve dv/dt characteristics by providing projections extruded from P1 and P2 layers at the N1 layer around the border of both conductive pathes for a TRIAC having the P2-N1-P1-N3 layers of the conductive path faced in opposite to the P1-N1-P2-N2 layers of the conductive path running from the first electrode to the second electrode in the same substrate. CONSTITUTION:Projection sections 16, 17 extruded from a P1 layer and a P2 layer are formed on a common base N1 layer, wherein the projection sections are formed on approx. border between the right side and the left side of conductive regions of a TRIAC. Therefore, when the right side region is conducted, the holes in a base layer 2a which belongs to the N1 layer is swept if the voltage is changed to reverse voltage. And the projections 16 and 17 prevent the holes from flowing into the base layer 1b of the left side conductive path. Therefore, the characteristics of dv/dt will be heightened.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8359579A JPS568876A (en) | 1979-07-02 | 1979-07-02 | Triac |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8359579A JPS568876A (en) | 1979-07-02 | 1979-07-02 | Triac |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS568876A true JPS568876A (en) | 1981-01-29 |
Family
ID=13806835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8359579A Pending JPS568876A (en) | 1979-07-02 | 1979-07-02 | Triac |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS568876A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6022370A (en) * | 1983-07-18 | 1985-02-04 | Mitsubishi Electric Corp | Triac |
US4982261A (en) * | 1987-04-27 | 1991-01-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
-
1979
- 1979-07-02 JP JP8359579A patent/JPS568876A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6022370A (en) * | 1983-07-18 | 1985-02-04 | Mitsubishi Electric Corp | Triac |
US4982261A (en) * | 1987-04-27 | 1991-01-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
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