JPS6152586B2 - - Google Patents

Info

Publication number
JPS6152586B2
JPS6152586B2 JP54158073A JP15807379A JPS6152586B2 JP S6152586 B2 JPS6152586 B2 JP S6152586B2 JP 54158073 A JP54158073 A JP 54158073A JP 15807379 A JP15807379 A JP 15807379A JP S6152586 B2 JPS6152586 B2 JP S6152586B2
Authority
JP
Japan
Prior art keywords
layer
layers
outermost layer
outermost
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54158073A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5681978A (en
Inventor
Tatsuo Yamazaki
Shuroku Sakurada
Katsumi Akabane
Isao Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Minebea Power Semiconductor Device Inc
Original Assignee
Hitachi Ltd
Hitachi Haramachi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Haramachi Electronics Ltd filed Critical Hitachi Ltd
Priority to JP15807379A priority Critical patent/JPS5681978A/ja
Publication of JPS5681978A publication Critical patent/JPS5681978A/ja
Publication of JPS6152586B2 publication Critical patent/JPS6152586B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
JP15807379A 1979-12-07 1979-12-07 Thyristor Granted JPS5681978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15807379A JPS5681978A (en) 1979-12-07 1979-12-07 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15807379A JPS5681978A (en) 1979-12-07 1979-12-07 Thyristor

Publications (2)

Publication Number Publication Date
JPS5681978A JPS5681978A (en) 1981-07-04
JPS6152586B2 true JPS6152586B2 (enrdf_load_stackoverflow) 1986-11-13

Family

ID=15663698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15807379A Granted JPS5681978A (en) 1979-12-07 1979-12-07 Thyristor

Country Status (1)

Country Link
JP (1) JPS5681978A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS624368A (ja) * 1985-06-28 1987-01-10 シ−メンス、アクチエンゲゼルシヤフト サイリスタ
JP2632322B2 (ja) * 1987-10-02 1997-07-23 財団法人 半導体研究振興会 電力用半導体素子

Also Published As

Publication number Publication date
JPS5681978A (en) 1981-07-04

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