JPS5680912A - Piezoelectric element for surface wave filter - Google Patents
Piezoelectric element for surface wave filterInfo
- Publication number
- JPS5680912A JPS5680912A JP15744779A JP15744779A JPS5680912A JP S5680912 A JPS5680912 A JP S5680912A JP 15744779 A JP15744779 A JP 15744779A JP 15744779 A JP15744779 A JP 15744779A JP S5680912 A JPS5680912 A JP S5680912A
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- electrodes
- wafer
- adhesive strength
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
PURPOSE:To improve adhesive strength between electrodes and a substrate by forming a pattern group of input electrodes and output electrodes by vapor-depositing Al on one main surface of a piezoelectric substance wafer and then by carrying out a heat treatment. CONSTITUTION:One main surface of a wafer of 62mm.phi, for example, made of LiTaO3 is mirror-finished and on this mirror surface, Al is vapor-deposited to form a thin vapor-deposition film. Next, pattern groups of prescribed input electrodes 12' and output electrodes 13' are formed by photoetching. Such a wafer is thermally processed in a nitrogen atmosphere at 300-400 deg.C for 30-60min, for example. Consequently, grown seeds of about 0.7-1.5mumphi are formed on surfaces of input electrodes 12' and output electrodes 13' made of the Al-vapor-deposition films. Thus, the adhesive strength between the Al-vapor-deposition films and piezoelectric substrate 11 is improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15744779A JPS5680912A (en) | 1979-12-06 | 1979-12-06 | Piezoelectric element for surface wave filter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15744779A JPS5680912A (en) | 1979-12-06 | 1979-12-06 | Piezoelectric element for surface wave filter |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5680912A true JPS5680912A (en) | 1981-07-02 |
JPS6223486B2 JPS6223486B2 (en) | 1987-05-23 |
Family
ID=15649850
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15744779A Granted JPS5680912A (en) | 1979-12-06 | 1979-12-06 | Piezoelectric element for surface wave filter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5680912A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52138442A (en) * | 1976-05-17 | 1977-11-18 | Hitachi Ltd | Method of forming metal membrane |
-
1979
- 1979-12-06 JP JP15744779A patent/JPS5680912A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52138442A (en) * | 1976-05-17 | 1977-11-18 | Hitachi Ltd | Method of forming metal membrane |
Also Published As
Publication number | Publication date |
---|---|
JPS6223486B2 (en) | 1987-05-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR840003530A (en) | Manufacturing method of single crystal film | |
ES483941A1 (en) | Semiconductor processing | |
CH641004B (en) | METHOD OF MANUFACTURING A QUARTZ CRYSTAL VIBRATOR AND VIBRATOR OBTAINED BY THIS PROCESS. | |
GB1299237A (en) | Composite structure of zinc oxide deposited epitaxially on sapphire | |
JPS6462911A (en) | Surface acoustic wave element | |
JPS5680912A (en) | Piezoelectric element for surface wave filter | |
JPS5749263A (en) | Manufacture of close contact type image sensor | |
RU93057150A (en) | Method of producing photosensitive, resistive and optical nonlinear thin-film heterostructures based on semiconductor and dielectric materials | |
JPS55124244A (en) | Method of fabricating chip component | |
JPS5549016A (en) | Elastic surface-wave propagation element | |
JPS6467818A (en) | Manufacture of superconducting material | |
JPS6192022A (en) | Surface wave filter | |
JPS5333055A (en) | Vapor phase growing apparatus of semiconductor crystals | |
JPS5713802A (en) | Elastic surface wave oscillator | |
JPS53108767A (en) | Growth method of polycrystalline silicon | |
JPS645061A (en) | Manufacture of image sensor | |
JPS6428374A (en) | Method for selectively growing tungsten | |
SANTIAGO et al. | Process for forming epitaxial BaF 2 on GaAs(Patent Application) | |
JPS56103432A (en) | Production of semiconductor | |
JPS5435176A (en) | Depositing method by vacuum evaporation | |
JPS6436756A (en) | Manufacture of perpendicular magnetic recording film | |
JPS57162819A (en) | Surface acoustic wave filter | |
JPS5566113A (en) | Manufacture of elastic surface wave device | |
RU93057159A (en) | METHOD OF CULTIVATION OF EPITAXIAL LAYERS OF SILICON CARBIDE | |
JPS55110418A (en) | Surface acoustic wave device |