RU93057150A - Method of producing photosensitive, resistive and optical nonlinear thin-film heterostructures based on semiconductor and dielectric materials - Google Patents

Method of producing photosensitive, resistive and optical nonlinear thin-film heterostructures based on semiconductor and dielectric materials

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Publication number
RU93057150A
RU93057150A RU93057150/02A RU93057150A RU93057150A RU 93057150 A RU93057150 A RU 93057150A RU 93057150/02 A RU93057150/02 A RU 93057150/02A RU 93057150 A RU93057150 A RU 93057150A RU 93057150 A RU93057150 A RU 93057150A
Authority
RU
Russia
Prior art keywords
semiconductor
resistive
thin
dielectric materials
film
Prior art date
Application number
RU93057150/02A
Other languages
Russian (ru)
Other versions
RU2089656C1 (en
Inventor
О.В. Гончарова
А.В. Демин
O.V. Goncharova
A.V. Demin
Original Assignee
О.В. Гончарова
А.В. Демин
O.V. Goncharova
A.V. Demin
Filing date
Publication date
Application filed by О.В. Гончарова, А.В. Демин, O.V. Goncharova, A.V. Demin filed Critical О.В. Гончарова
Priority to RU93057150A priority Critical patent/RU2089656C1/en
Priority claimed from RU93057150A external-priority patent/RU2089656C1/en
Publication of RU93057150A publication Critical patent/RU93057150A/en
Application granted granted Critical
Publication of RU2089656C1 publication Critical patent/RU2089656C1/en

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Claims (1)

Изобретение относится к тонкопленочной электронике и может быть использовано для создания тонкопленочных квантово-размерных гетероструктур полупроводник/диэлектрик, реализуемых, в частности, в виде фотопреобразователей, интерференционных фильтров, нелинейных беззеркальных слоев, планарных волноводов и интерференционных элементов пикосекундного быстродействия, а также - многослойных резистивных конструкций. Целью изобретения является повышение качества полупроводниковых пленок за счет расширения спектральных областей фоточувствительности, прозрачности и оптической нелинейности полупроводниковых материалов, а также изменения параметров электронного транспорта в них. Поставленная цель достигается тем, что на подложку поочередно напыляют микрослои полупроводникового материала с размером микрокристаллов d, определяемым из выражения: d = (0,2 - 3,0) <195> а<Mv>Б<D>, нм, где а<Mv>Б<D> - первый Боровский радиус экситона исходного материала, и диэлектрические микрослои произвольной структуры.The invention relates to thin-film electronics and can be used to create thin-film quantum-sized heterostructures semiconductor / dielectric, implemented, in particular, in the form of photovoltage transducers, interference filters, nonlinear mirrorless layers, planar waveguides and picosecond-response interference elements, as well as multilayer resistors . The aim of the invention is to improve the quality of semiconductor films due to the expansion of the spectral regions of photosensitivity, transparency and optical nonlinearity of semiconductor materials, as well as changes in the parameters of electron transport in them. This goal is achieved by the fact that micro-layers of semiconductor material with a size of microcrystals d, which are determined from the expression, are alternately sprayed onto the substrate: Mv> B <D> is the first Bohr radius of the exciton of the source material, and the dielectric microlayers of arbitrary structure.
RU93057150A 1993-12-23 1993-12-23 Method of production of photosensitive resistive and optically nonlinear thin-filmed heterostructures based on semiconductor and dielectric materials RU2089656C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU93057150A RU2089656C1 (en) 1993-12-23 1993-12-23 Method of production of photosensitive resistive and optically nonlinear thin-filmed heterostructures based on semiconductor and dielectric materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU93057150A RU2089656C1 (en) 1993-12-23 1993-12-23 Method of production of photosensitive resistive and optically nonlinear thin-filmed heterostructures based on semiconductor and dielectric materials

Publications (2)

Publication Number Publication Date
RU93057150A true RU93057150A (en) 1996-08-10
RU2089656C1 RU2089656C1 (en) 1997-09-10

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Application Number Title Priority Date Filing Date
RU93057150A RU2089656C1 (en) 1993-12-23 1993-12-23 Method of production of photosensitive resistive and optically nonlinear thin-filmed heterostructures based on semiconductor and dielectric materials

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RU (1) RU2089656C1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2469432C1 (en) * 2011-07-28 2012-12-10 Закрытое Акционерное Общество "Светлана-Рост" Method to grow heterostructure for infrared photodetector
RU2599769C2 (en) * 2013-06-13 2016-10-10 Общество с ограниченной ответственностью специальное конструкторско-технологическое бюро "ИНВЕРСИЯ" Method for preparing photoactive multilayer heterostructure of microcrystalline silicone
RU2570102C2 (en) * 2013-12-26 2015-12-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Санкт-Петербургский государственный университет" (СПбГУ) Method of obtaining laser radiation on quantum dots and apparatus therefor
RU2750503C1 (en) * 2020-12-07 2021-06-29 Акционерное общество "Научно-исследовательский институт физических измерений" Method for producing a multilayer thin-film heterostructure with a given value of specific surface resistance

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