JPS6192022A - Surface wave filter - Google Patents
Surface wave filterInfo
- Publication number
- JPS6192022A JPS6192022A JP21391684A JP21391684A JPS6192022A JP S6192022 A JPS6192022 A JP S6192022A JP 21391684 A JP21391684 A JP 21391684A JP 21391684 A JP21391684 A JP 21391684A JP S6192022 A JPS6192022 A JP S6192022A
- Authority
- JP
- Japan
- Prior art keywords
- zinc oxide
- glass substrate
- oxide thin
- wave filter
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02984—Protection measures against damaging
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は映像機器、通信機器などに使用される表面波フ
ィルタに関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a surface wave filter used in video equipment, communication equipment, etc.
従来例の構成とその問題点
従来、この種の表面波フィルタは第6図の如き構成とな
っており、ガラス基板(1)の片方の主平面にアルミの
くし形電極(4)を設け、その上に酸化亜鉛(5)をス
パッタリング等の方法で多結晶の状態で付け、さらにそ
の薄膜状の酸化亜鉛(5)の上に、アルミの対向電極(
6)を蒸着等の方法で設けてなっていた。Conventional Structure and Problems Conventionally, this type of surface wave filter has a structure as shown in FIG. 6, in which an aluminum comb-shaped electrode (4) is provided on one main plane of a glass substrate (1). Zinc oxide (5) is applied thereon in a polycrystalline state by a method such as sputtering, and then an aluminum counter electrode (
6) was provided by a method such as vapor deposition.
この方法によると、各種の処理工程(例えばフォトリソ
グラフィーの工程でレジスト液の硬化時150℃の乾燥
機に投入したりする)にて、温度サイクルを繰り返す為
、ガラス基板(1)と酸化亜鉛薄膜(5)の膨張係数の
違いに起因して、第7図の如く、反ってしまうという欠
点を有し、スクライブ、又は、ダイシングという切断の
工程においてウニへを真空チャックできないという問題
を有している。According to this method, the glass substrate (1) and the zinc oxide thin film are repeatedly subjected to temperature cycles during various processing steps (for example, when the resist solution is hardened in the photolithography process, it is placed in a dryer at 150°C). (5) Due to the difference in expansion coefficient, the sea urchin has the disadvantage of warping as shown in Figure 7, and there is a problem that the sea urchin cannot be vacuum chucked in the cutting process of scribing or dicing. There is.
発明の目的
本発明は反りがなく、反りによる工程不良、結晶(酸化
亜鉛)の欠陥等を皆無とできる表面波フィルタを提供す
ることを目的とする。OBJECTS OF THE INVENTION It is an object of the present invention to provide a surface acoustic wave filter that is free from warping, and is free from process defects and crystal (zinc oxide) defects caused by warping.
発明の構成
本発明の表面波フィルタは、ガラス基板の一方の主平面
上にくし形電極と圧電材料および対向電極から成る表面
波フィルタ部を構成すると共に。Structure of the Invention The surface acoustic wave filter of the present invention includes a surface acoustic wave filter section including a comb-shaped electrode, a piezoelectric material, and a counter electrode on one main plane of a glass substrate.
他方の主平面上に前記圧電材料と同一もしくは膨張係数
が前記圧電材料に近い材料を付けて基板の反りを防止し
たことを特徴とする。The present invention is characterized in that a material having the same coefficient of expansion as the piezoelectric material or close to that of the piezoelectric material is attached on the other main plane to prevent warping of the substrate.
実施例の説明
以下、本発明の一実施例第1図〜第5図に基づいて説明
する。DESCRIPTION OF EMBODIMENTS Hereinafter, one embodiment of the present invention will be described based on FIGS. 1 to 5.
第1図のガラス基板(1)の片側の主平面に、第2図に
示すように酸化亜鉛薄膜(2)をスパッタリング等の方
法で設け、かつ後のエツチング工程で酸化亜鉛薄膜(2
)がエツチングされない為に第3図のようにSun、膜
(3)をスパッタリング等の方法で設ける。これで、裏
側主平面の構成は全てである。次に、表側の主平面にア
ルミを蒸着し、フォトリソグラフィーの手法で第4図の
ようにアルミのくし形電極(4)を設け、その上から第
5図のように酸化亜鉛をスパッタして酸化亜鉛薄rS(
5)を設け、さらに、酸化亜鉛薄膜(5)の上にアルミ
の対向電極(6)を、蒸着し、フォトリソグラフィーの
手法で作る。最後にくし形電極に接続しているパッド電
極の上にある酸化亜鉛をエツチングで除去し、ウェハを
完成させる。As shown in FIG. 2, a zinc oxide thin film (2) is provided on one main plane of the glass substrate (1) in FIG.
) is not etched, a Sun film (3) is provided by a method such as sputtering as shown in FIG. This completes the configuration of the back side principal plane. Next, aluminum is vapor-deposited on the main plane of the front side, and aluminum comb-shaped electrodes (4) are provided using photolithography as shown in Fig. 4. Zinc oxide is sputtered on top of the comb-shaped electrodes (4) as shown in Fig. 5. Zinc oxide thin rS (
5), and further, an aluminum counter electrode (6) is vapor deposited on the zinc oxide thin film (5) and made by photolithography. Finally, the zinc oxide on the pad electrodes connected to the interdigitated electrodes is removed by etching to complete the wafer.
このようにガラス基板(1)の両面に酸化亜鉛薄1iA
(2)(5)をつけた為、まず温度変化による膨張の差
が発生しにくくなり、ガラス基板(ウェハ)の反りは無
くなった。In this way, a thin film of 1iA of zinc oxide was applied to both sides of the glass substrate (1).
By adding (2) and (5), firstly, differences in expansion caused by temperature changes are less likely to occur, and the glass substrate (wafer) no longer warps.
上記実施例ではガラス基板の一方の主平面上に表面波フ
ィルタ部を構成し、他方の主平面上には前記表面波フィ
ルタ部に使用した圧電材料としての酸化亜鉛を付けたが
、これは表面波フィルタ部の圧電材料と膨張係数が近い
材料であれば同様の効果が得られる。In the above embodiment, a surface wave filter section was formed on one main plane of the glass substrate, and zinc oxide as a piezoelectric material used in the surface wave filter section was attached on the other main plane. A similar effect can be obtained if the material has a similar expansion coefficient to the piezoelectric material of the wave filter section.
発明の詳細
な説明のように本発明の表面波フィルタは、ガラス基板
の一方の主平面上にくし形電極と圧電材料および対向電
極から成る表面波フィルタ部を構成すると共に、他方の
主平面上に前記圧電材料と同一もしくは膨張係数が前記
圧電材料に近い材料を付けたため、ガラス基板の反りが
なくなると共に次のような効果が得られる。As described in the detailed description of the invention, the surface wave filter of the present invention comprises a surface wave filter section consisting of a comb-shaped electrode, a piezoelectric material, and a counter electrode on one main plane of a glass substrate, and a surface wave filter section consisting of a comb-shaped electrode, a piezoelectric material, and a counter electrode on one main plane of a glass substrate. Since a material having the same coefficient of expansion as the piezoelectric material or close to that of the piezoelectric material is attached to the glass substrate, warping of the glass substrate is eliminated and the following effects are obtained.
■スクライブ、ダイシング工程においてウェハの反りに
よるチップの紛失、破壊が無くなった。■No more loss or destruction of chips due to wafer warping during scribing and dicing processes.
■露式1程でのマスクの位置合わせがやり易くなり、レ
ジストの″こすり″による傷が無くなった。■Mask positioning in step 1 of the Dew Method is now easier, and scratches caused by "rubbing" of the resist are eliminated.
す。
(1)・・・ガラス基板、(2)(5)・・・酸化亜鉛
〔圧電材料〕、(3)・・・S io2、(4)・・・
くし形電極、(5)・・・酸化亜鉛、(6)・・・対向
電極
代理人 森 本 義 仏
書1図
口 /
第Z図vinegar. (1)...Glass substrate, (2)(5)...Zinc oxide [piezoelectric material], (3)...S io2, (4)...
Comb-shaped electrode, (5)...Zinc oxide, (6)...Counter electrode representative Yoshi Morimoto French Book 1 Illustration / Diagram Z
Claims (1)
料および対向電極から成る表面波フィルタ部を構成する
と共に、他方の主平面上に前記圧電材料と同一もしくは
膨張係数が前記圧電材料に近い材料を付けた表面波フィ
ルタ。1. A surface wave filter section consisting of a comb-shaped electrode, a piezoelectric material, and a counter electrode is formed on one main plane of the glass substrate, and a surface wave filter section consisting of a comb-shaped electrode, a piezoelectric material, and a counter electrode is formed on the other main plane. Surface wave filter with similar materials.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21391684A JPS6192022A (en) | 1984-10-11 | 1984-10-11 | Surface wave filter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21391684A JPS6192022A (en) | 1984-10-11 | 1984-10-11 | Surface wave filter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6192022A true JPS6192022A (en) | 1986-05-10 |
Family
ID=16647158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21391684A Pending JPS6192022A (en) | 1984-10-11 | 1984-10-11 | Surface wave filter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6192022A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6240812A (en) * | 1985-08-19 | 1987-02-21 | Toshiba Corp | Surface acoustic wave device |
US5061870A (en) * | 1989-07-06 | 1991-10-29 | Murata Mfg. Co., Ltd. | Surface acoustic wave device |
US5666091A (en) * | 1995-03-20 | 1997-09-09 | Hitachi Media Electronics Co., Ltd. | Structure of surface acoustic wave filter |
JP2006222512A (en) * | 2005-02-08 | 2006-08-24 | Seiko Epson Corp | Surface acoustic wave device |
-
1984
- 1984-10-11 JP JP21391684A patent/JPS6192022A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6240812A (en) * | 1985-08-19 | 1987-02-21 | Toshiba Corp | Surface acoustic wave device |
US5061870A (en) * | 1989-07-06 | 1991-10-29 | Murata Mfg. Co., Ltd. | Surface acoustic wave device |
US5666091A (en) * | 1995-03-20 | 1997-09-09 | Hitachi Media Electronics Co., Ltd. | Structure of surface acoustic wave filter |
JP2006222512A (en) * | 2005-02-08 | 2006-08-24 | Seiko Epson Corp | Surface acoustic wave device |
JP4609096B2 (en) * | 2005-02-08 | 2011-01-12 | セイコーエプソン株式会社 | Surface acoustic wave device |
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