JPS6235361A - Photomask material - Google Patents
Photomask materialInfo
- Publication number
- JPS6235361A JPS6235361A JP60176337A JP17633785A JPS6235361A JP S6235361 A JPS6235361 A JP S6235361A JP 60176337 A JP60176337 A JP 60176337A JP 17633785 A JP17633785 A JP 17633785A JP S6235361 A JPS6235361 A JP S6235361A
- Authority
- JP
- Japan
- Prior art keywords
- film
- aluminum
- base plate
- quartz base
- quartz substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体集積回路パターンを形成する時に用
いる原版となるフォトマスク材料に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photomask material that serves as an original plate used when forming a semiconductor integrated circuit pattern.
（従来の技術〕
従来のフォトマスク材料の構造は、第２図に示すように
、石英基板１上に８０ｎｍ程度の厚みを持つクロム膜３
を真空蒸着法またはスパッタコート法により形成したも
のであった。(Prior Art) The structure of a conventional photomask material is as shown in FIG.
was formed by vacuum evaporation or sputter coating.
−ｍにクロム（Ｃｒ）は、１１００ｎ以下の膜厚でも充
分な光学濃度を持っており、薄い膜厚でフォトマスク材
料が形成でき、そのため微細なマスクパターンが形成で
きるという利点をもっているために、フォトマスク材料
の遮光材料として広く用いられている。Chromium (Cr) has a sufficient optical density even with a film thickness of 1100 nm or less, and has the advantage that a photomask material can be formed with a thin film thickness, and therefore a fine mask pattern can be formed. It is widely used as a light-shielding material for photomask materials.
しかしながら、クロム膜は石英基板に対し接着性が良好
ではない、そのために、洗浄時にクロム膜の剥離が生じ
、マスクパターンの欠陥が増加するという欠点を持って
いた。特に近年マスクパターン寸法が小さくなるにつれ
て、この問題は顕著になってきた。However, the chromium film does not have good adhesion to the quartz substrate, which causes the chromium film to peel off during cleaning, resulting in an increase in defects in the mask pattern. In particular, this problem has become more prominent as mask pattern dimensions have become smaller in recent years.
この発明は上記のような問題点を解消するためになされ
たもので、石英基板に対し接着性の良好な遮光膜を形成
することにより、膜の剥離をなくし、洗浄時のマスクパ
ターン欠陥の発生をなくしたフォトマスク材料を提供す
ることを目的としている。This invention was made to solve the above-mentioned problems, and by forming a light-shielding film with good adhesion on a quartz substrate, it eliminates the peeling of the film and reduces the occurrence of mask pattern defects during cleaning. The purpose is to provide a photomask material that eliminates the
本発明にかかるフォトマスク材料は、石英基板上にアル
ミニウム、アルミニウム化合物、またはアルミニウム合
金から成る膜を形成し、その上に金属膜を形成したもの
である。The photomask material according to the present invention has a film made of aluminum, an aluminum compound, or an aluminum alloy formed on a quartz substrate, and a metal film formed thereon.
この発明においては、石英基板と接着性の良いアルミニ
ウム１アルミニウム化合物、またはアルミニウム合金か
ら成る膜を金属膜と石英基板との中間層として用いたか
ら、金属膜と石英基板との接着性を改善できる。In this invention, since a film made of aluminum-aluminum compound or aluminum alloy, which has good adhesion to the quartz substrate, is used as an intermediate layer between the metal film and the quartz substrate, the adhesion between the metal film and the quartz substrate can be improved.
以下、本発明の一実施例について第１図を用いて説明を
行う。第１図は本発明の一実施例によるフォトマスク材
料を示し、これは石英基板ｌ上にアルミニウム膜２をス
パッタ法等で２０ｒ＋＋ｎ程度の膜厚に形成し、その後
スパッタ法等でクロム膜３を８０ｎｍ厚に形成すること
によって得られる。An embodiment of the present invention will be described below with reference to FIG. FIG. 1 shows a photomask material according to an embodiment of the present invention, in which an aluminum film 2 is formed on a quartz substrate l to a thickness of about 20r++n by sputtering or the like, and then a chromium film 3 is formed by sputtering or the like. This can be obtained by forming it to a thickness of 80 nm.
このような本実施例においては、アルミニウムは石英基
板に対する接着性が良好であり、またアルミニウム膜と
クロム膜との接着性も良好であるため、このフォトマス
ク材料を用いれば、数多くの洗浄などを行った後もパタ
ーン欠陥が発生しない。In this example, aluminum has good adhesion to the quartz substrate, and also good adhesion between the aluminum film and the chromium film, so if this photomask material is used, a lot of cleaning etc. No pattern defects occur even after this process.
なお上記実施例では、クロム膜と石英基板との間にアル
ミニウム膜を形成しているが、アルミニウム膜のかわり
にアルミニウム合金膜又はアルミニウム化合物膜を用い
ても同様の効果が期待できる。また、金Ｍ膜としてクロ
ム膜を使用しているが、これは他の遮光物質を用いても
良い。In the above embodiment, an aluminum film is formed between the chromium film and the quartz substrate, but the same effect can be expected by using an aluminum alloy film or an aluminum compound film instead of the aluminum film. Further, although a chromium film is used as the gold M film, other light-shielding materials may be used instead.
以上のようにこの発明に係るフォトマスク材料によれば
、石英基板と接着性の良いアルミニウム等の膜を金属膜
と石英基板との中間層として用いたので、金属膜と石英
基板との接着性を改善できる効果がある。As described above, according to the photomask material of the present invention, since a film made of aluminum or the like having good adhesion to the quartz substrate is used as an intermediate layer between the metal film and the quartz substrate, the adhesion between the metal film and the quartz substrate is It has the effect of improving
第１図は本発明の一実施例を示す断面図、第２図は従来
のフォトマスク材料を示す断面図である。
図中、１は石英基板、２はアルミニウム膜、３はクロム
膜を示す。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a sectional view showing an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional photomask material. In the figure, 1 is a quartz substrate, 2 is an aluminum film, and 3 is a chromium film. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
物、またはアルミニウム合金から成る膜を形成し、その
上に金属膜を形成してなることを特徴とするフォトマス
ク材料(1) A photomask material characterized by forming a film made of aluminum, an aluminum compound, or an aluminum alloy on a quartz substrate, and forming a metal film on top of the film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60176337A JPS6235361A (en) | 1985-08-09 | 1985-08-09 | Photomask material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60176337A JPS6235361A (en) | 1985-08-09 | 1985-08-09 | Photomask material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6235361A true JPS6235361A (en) | 1987-02-16 |
Family
ID=16011818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60176337A Pending JPS6235361A (en) | 1985-08-09 | 1985-08-09 | Photomask material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6235361A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6270849A (en) * | 1985-09-24 | 1987-04-01 | Hoya Corp | Photomask bland and photomask |
| JP2009092840A (en) * | 2007-10-05 | 2009-04-30 | Dainippon Printing Co Ltd | Photomask and photomask blank |
| US20180348627A1 (en) * | 2016-01-27 | 2018-12-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
| US10969686B2 (en) | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
| US10969677B2 (en) | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask |
-
1985
- 1985-08-09 JP JP60176337A patent/JPS6235361A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6270849A (en) * | 1985-09-24 | 1987-04-01 | Hoya Corp | Photomask bland and photomask |
| JPH0131179B2 (en) * | 1985-09-24 | 1989-06-23 | Hoya Corp | |
| JP2009092840A (en) * | 2007-10-05 | 2009-04-30 | Dainippon Printing Co Ltd | Photomask and photomask blank |
| US20180348627A1 (en) * | 2016-01-27 | 2018-12-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
| US10969686B2 (en) | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
| US10969677B2 (en) | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask |
| US11029596B2 (en) | 2016-01-27 | 2021-06-08 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
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