JPS63214754A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPS63214754A JPS63214754A JP62049405A JP4940587A JPS63214754A JP S63214754 A JPS63214754 A JP S63214754A JP 62049405 A JP62049405 A JP 62049405A JP 4940587 A JP4940587 A JP 4940587A JP S63214754 A JPS63214754 A JP S63214754A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transition metal
- metal silicide
- oxidized
- silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021350 transition metal silicide Inorganic materials 0.000 claims abstract description 16
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 229910020968 MoSi2 Inorganic materials 0.000 abstract 2
- 238000010030 laminating Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 71
- 229910016006 MoSi Inorganic materials 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 239000011651 chromium Substances 0.000 description 7
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical group [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 6
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、フォトマスクに関し、特に半導体装置の製
造に使用するフォトマスクに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photomask, and more particularly to a photomask used in the manufacture of semiconductor devices.
半導体装置の製造に使用するマスクは、初期においては
ガラス−基板に写真乳剤を塗布した乾板を用いていたが
、高集積化および微細化が進むにつれて、現在では例え
ば、特開昭５７−１５７２４７号公報、特開昭５７−１
５７２４９号公報に示されるように、透明ガラス基板上
にクロム（Ｃｒ）などの金属薄膜が形成されたハードマ
スクが広く使用されている。第４図は従来のフォトマス
クを示す断面図である０図において、１は石英などの透
明ガラス基板で、このガラス基板１上にＣｒなとの金属
ｗＡ２が蒸着またはスパッタ法により６００〜８００人
の膜厚で形成されている。In the early days, the masks used in the manufacture of semiconductor devices were dry plates coated with photographic emulsion on glass substrates, but as higher integration and miniaturization progressed, masks are now used, for example, in Japanese Patent Application Laid-Open No. 57-157247. Publication, JP-A-57-1
As shown in Japanese Patent No. 57249, hard masks in which a thin film of metal such as chromium (Cr) is formed on a transparent glass substrate are widely used. FIG. 4 is a cross-sectional view showing a conventional photomask. In FIG. It is formed with a film thickness of .
半導体用フォトマスクは、金属膜２上にフォトレジスト
または電子ビーム用レジスト２を塗布し、光または電子
ビームによりパターンを描画した後、現像、エツチング
などの工程を経て作られる。エツチングは金属膜２がＣ
ｒの場合、ウェット法では硝酸第二セリウムアンモニウ
ムと過塩素酸で行い、ドライ法では四塩化炭素（ＣＣ１
，）と酸素（ｏ２）の混合ガスで行う。半導体装置、特
にＶＬＳＩなど高集積、微細パターンを有するデバイス
用マスクの製造では、サイドエッチ効果が少ないドライ
エツチング法が有利である。A semiconductor photomask is made by applying a photoresist or an electron beam resist 2 onto a metal film 2, drawing a pattern using light or an electron beam, and then performing steps such as development and etching. Etching is performed so that the metal film 2 is C
r, the wet method uses ceric ammonium nitrate and perchloric acid, and the dry method uses carbon tetrachloride (CC1
) and oxygen (O2). In the production of masks for semiconductor devices, particularly devices such as VLSIs with high integration and fine patterns, dry etching is advantageous because it has less side etching effect.
従来のＣｒマスクの製造には、ウェットエツチング法が
一般的であるが、サイドエッチ効果などにより高精度マ
スクの製造が困難であり、またドライエツチング法では
Ｃｒのエツチング速度が約１００人／ｓｉｎ以下である
ことから、レジストとの選択比が悪くなってフォトマス
クの量産に不適であった。また、Ｃｒの場合、石英ガラ
ス基板との接着性が悪く、微細パターンが洗浄工程にお
いて剥がれるという問題もあった。Conventional wet etching is commonly used to manufacture Cr masks, but it is difficult to manufacture high-precision masks due to side etch effects, and dry etching has a Cr etching rate of approximately 100 etching/sin or less. Therefore, the selectivity with the resist was poor, making it unsuitable for mass production of photomasks. Further, in the case of Cr, there was also a problem that the adhesion to the quartz glass substrate was poor and the fine pattern was peeled off during the cleaning process.
上記問題点を解決する手段として、例えば特願昭５９−
６１３７２号明細書に見られるように、遷移金属のシリ
サイド膜をマスク材料として用いる方法が考えられる。As a means to solve the above problems, for example,
As seen in the specification of No. 61372, a method using a transition metal silicide film as a mask material can be considered.
このようにすると石英ガラス基板中のシリコン（Ｓｔ）
と、マスク材料としての遷移金属のシリサイド中のＳｔ
とが有効に結合して接着強度の強いものが得られる。ま
た、レジストはモリブデンシリサイド（以下、Ｍｏ５ｔ
。In this way, silicon (St) in the quartz glass substrate
and St in the transition metal silicide as a mask material.
The two are effectively bonded together, resulting in a product with strong adhesive strength. In addition, the resist is molybdenum silicide (hereinafter referred to as Mo5t).
.
とする）を例にすると、四フッ化炭素（ＣＦ４）と０□
の混合ガスプラズマにより、Ｃｒに比べて容易にドライ
エツチングができる（エツチング速度〜１０００人／−
１ｎ）。For example, carbon tetrafluoride (CF4) and 0□
Dry etching is easier than with Cr using a mixed gas plasma (etching speed ~1000 people/-
1n).
しかしながら、Ｍｏ５ｉｚ膜は光に対する反射率が５０
％前後と高く、ウェハへのパターン転写の際にパターン
の解像性をウェハとマスクの間の光の多重散乱で低下さ
せることになり、サブミクロンパターンを有する超ＬＳ
Ｉデバイスの製造に困難を来すことになる。 ゛
この発明は、上記従来の問題点を解消するためなされた
もので、ドライエツチングが容易で、かつ透明基板との
接着性もあり、しかもマスクの反射率も低い高品質のフ
ォトマスクを提供することを目的とする。However, the Mo5iz film has a light reflectance of 50
%, and when transferring the pattern to the wafer, the resolution of the pattern is reduced due to multiple scattering of light between the wafer and the mask.
This will cause difficulties in manufacturing the I-device. ``This invention was made to solve the above-mentioned conventional problems, and provides a high-quality photomask that is easy to dry-etch, has adhesive properties with a transparent substrate, and has low mask reflectance. The purpose is to
この発明に係るフォトマスクは、透明基板と、この透明
基板上に形成された酸化された遷移金属のシリサイド膜
と、この酸化膜上に形成された遷移金属のシリサイド膜
と、さらにこのシリサイド膜上に形成された酸化された
遷移金属のシリサイド膜との３層膜によって構成したも
のである。The photomask according to the present invention includes a transparent substrate, an oxidized transition metal silicide film formed on the transparent substrate, a transition metal silicide film formed on the oxide film, and a transition metal silicide film formed on the oxide film. It is composed of a three-layer film including a silicide film of an oxidized transition metal formed in
遷移金属のシリサイド膜およびその酸化膜は、容易にド
ライエツチングができ、かつ透明基板との接着性が良い
ので、マスク洗浄のときに微細パターンが剥がれにくい
。さらに酸化された遷移金属のシリサイド膜は光源波長
に対する反射率が最小になる膜厚で、遷移金属のシリサ
イド膜を両側から挟んだ３層膜にしているので、反射率
が低く、解像度の低下が防止されることになる。Transition metal silicide films and their oxide films can be easily dry-etched and have good adhesion to transparent substrates, so fine patterns are unlikely to peel off during mask cleaning. Furthermore, the oxidized transition metal silicide film has a thickness that minimizes the reflectance to the light source wavelength, and since it is a three-layer film with the transition metal silicide film sandwiched from both sides, the reflectance is low and the resolution is not degraded. This will be prevented.
第１図は、この発明の一実施例によるフォトマスクの断
面図である。同図において、石英ガラスなどの透明ガラ
ス基板１上には、モリブテンシリサイドの酸化膜（以下
、Ｍｏ５ｉｔＯＸＩＩという）３ａがスパッタ法等によ
り約４０〜５０ｎｍ程度の膜厚で形成されている。Ｍｏ
Ｓｉ、Ｏｘ膜３ａの膜厚は、光源波長に′ｇ線（４３６
ｎｍ）を用いるので、その波長の１／１０程度としてい
る。FIG. 1 is a sectional view of a photomask according to an embodiment of the present invention. In the figure, on a transparent glass substrate 1 such as quartz glass, a molybdenum silicide oxide film (hereinafter referred to as Mo5itOXII) 3a is formed with a thickness of about 40 to 50 nm by sputtering or the like. Mo
The film thickness of the Si, Ox film 3a is based on the wavelength of the light source at the 'g line (436
nm), the wavelength is approximately 1/10 of that wavelength.
さらに、ＭｏＳｉ、Ｏｘ膜３ａ上には、Ｍｏ５ｉｚ膜４
が１１００ｎ程度の膜厚で形成され、この上に再びＭｏ
５ｉｔＯｘ膜３ｂが形成されることによって、３層膜構
成となっている。ここで、ＭＯ３ｉｔＯｘはＭｏＳｉ、
をターゲットとして、アルゴン（Ａｒ）と０８ガスを任
意の比率で混合したプラズマでスパッタすることにより
、Ｍｏ５ｔ。Further, a Mo5iz film 4 is formed on the MoSi, Ox film 3a.
is formed with a thickness of about 1100n, and on top of this again Mo
By forming the 5itOx film 3b, a three-layer film structure is obtained. Here, MO3itOx is MoSi,
Mo5t was produced by sputtering with a plasma containing argon (Ar) and 08 gas mixed at an arbitrary ratio using the target as a target.
とＯｘが適当な比率で化合されて形成できる。また、予
め適当な比率で作成したＭｏＳｉ、Ｏｘのターゲットを
Ａｒプラズマでスパッタして形成することもできる。こ
こで、半導体ウェハとマスク間における光の多重散乱抑
制するには、マスク材料を低反射性とする必要があり、
ＭｏＳｉ、Ｏｘ膜の酸素の比率が大きいほど低反射率と
なるが、徐々に絶縁性を帯びてくる。It can be formed by combining and Ox in an appropriate ratio. Alternatively, it can also be formed by sputtering MoSi and Ox targets prepared in advance at an appropriate ratio using Ar plasma. Here, in order to suppress multiple scattering of light between the semiconductor wafer and the mask, the mask material needs to have low reflectivity.
The higher the oxygen content of the MoSi or Ox film, the lower the reflectance, but it gradually becomes more insulating.
電子ビームでマスクを製作するには、チャージアップの
問題があるが、Ｍｏ５ｔｚＯｘ膜３ｂは膜厚が４０〜５
０ｎｍ程度であるので、電子ビーム（１０〜２０ Ｋｅ
Ｖ）は下層のＭｏ５ｔ、膜４に到達するため、酸素の比
率が大きい場合でも問題はない。There is a charge-up problem when manufacturing a mask using an electron beam, but the Mo5tzOx film 3b has a film thickness of 40 to 5
Since it is about 0 nm, an electron beam (10 to 20 Ke
V) reaches the underlying Mo5t film 4, so there is no problem even if the proportion of oxygen is large.
第２図はＭｏ５ｉｚＯｘ膜の膜厚と波長４３６ｎｍの光
に対する反射率の関係と、比較のためのＭ ｏ Ｓ ｉ
ｚ膜の反゛射率を示すグラフである。Ｍ。Figure 2 shows the relationship between the thickness of the Mo5izOx film and the reflectance for light with a wavelength of 436 nm, and for comparison,
It is a graph showing the reflectance of the Z film. M.
Ｓｔ、膜は５０ｎｍ以上の膜厚で、５０％以上の高い反
射率を示している。一方、Ｍｏ５ｉｔＯｘ膜は０〜ｌｏ
Ｏｎｍの膜厚で直線的な反射率の増加を示すが、１１０
０ｎ以上の膜厚になると反射率は一定になり、３０％程
度を示す、これはＭ。The St film has a thickness of 50 nm or more and exhibits a high reflectance of 50% or more. On the other hand, the Mo5itOx film is 0~lo
The reflectance shows a linear increase with a film thickness of Onm, but 110 nm.
When the film thickness becomes 0n or more, the reflectance becomes constant and shows about 30%, which is M.
５ｉｚＯｘ膜を単層で透明基板上に形成した場合である
が、ＭｏＳｉｇＷａの上にＭｏＳｉ、Ｏｘ膜を形成した
２層膜にすると反射率の挙動が変化してくる。This is a case where a single layer of 5izOx film is formed on a transparent substrate, but when a two-layer film is formed with MoSi and Ox films formed on MoSigWa, the behavior of reflectance changes.
第３図は石英ガラス基板上の膜厚１００ ｎｍのＭ Ｏ
Ｓ ｉ ｘ膜上にＭｏＳｉ、Ｏｘ膜の膜厚を変化させた
場合の反射率の変化を示すグラフである。Figure 3 shows M O with a thickness of 100 nm on a quartz glass substrate.
It is a graph showing changes in reflectance when the film thicknesses of MoSi and Ox films on the Si x film are changed.
図のように、Ｍｏ５ｔ、膜とＭｏＳｉｘＯｘ膜との２層
膜にすることによって、波長４３６ ｎｍに対する反射
率はＭｏＳｉ、Ｏｘ膜の膜厚が４０〜５０ｎｍ近傍で極
小値を示す。Ｍｏ５ｉｚ膜だけをマスク材料として用い
た場合、パターンの解像性が低下するが、上述のように
Ｍｏ５ｉｚ膜の上にＭｏ５ｉｚＯＸ［を４０〜５０ｎｍ
膜厚に形成すると、最小反射率の特性が得られるので、
高い解像性を得ることができる。したがって、第１図に
示したように石英ガラス基板ｌとＭｏ５ｉｚ膜４との間
にＭｏＳｉ、Ｏｘ膜３ａを形成することにより、全ての
多重散乱を最小にすることができる。また、シリサイド
膜は石英ガラス基板との接着性が良く、マスク洗浄によ
って微細パターンが剥がれなくなって、フォトマスクと
しての寿命が長くなる。As shown in the figure, by forming a two-layer film consisting of a Mo5t film and a MoSixOx film, the reflectance at a wavelength of 436 nm exhibits a minimum value when the thickness of the MoSi, Ox film is around 40 to 50 nm. If only the Mo5iz film is used as a mask material, the resolution of the pattern will decrease, but as mentioned above, if Mo5izOX [40 to 50 nm thick] is used on the Mo5iz film,
When formed to a thick film, the characteristic of minimum reflectance can be obtained.
High resolution can be obtained. Therefore, by forming the MoSi, Ox film 3a between the quartz glass substrate l and the Mo5iz film 4 as shown in FIG. 1, all multiple scattering can be minimized. In addition, the silicide film has good adhesion to the quartz glass substrate, and the fine pattern does not peel off when the mask is cleaned, extending the life of the photomask.
また、ＣＦ ｓ ＋ Ｏｔ （２％）の混合ガスを使用
し、０ 、 ２ Ｔｏｒｒの真空度、３００Ｗの条件下
では、約１ｏｏｏ人／ｓｉｎのエツチングスピードでエ
ツチングが終了する。更に、Ｍｏ５ｉｚＯｘ膜は、Ｍｏ
５ｉｔ膜に比べて若干エツチングスピードは低下するが
、これらは４０〜５０ｎｍの薄い膜であり、容易にエツ
チングができる。したがって、上記実施例のエツチング
スピードは従来のＣｒのドライエツチングスピードに比
べて約１０倍になり、フォトマスクの量産に適している
ことがわかる。Further, using a mixed gas of CF s + Ot (2%), under the conditions of a vacuum degree of 0.2 Torr and 300 W, etching is completed at an etching speed of about 100 people/sin. Furthermore, the Mo5izOx film
Although the etching speed is slightly lower than that of the 5it film, these are thin films of 40 to 50 nm and can be easily etched. Therefore, it can be seen that the etching speed of the above embodiment is about 10 times higher than the conventional dry etching speed of Cr, and is suitable for mass production of photomasks.
なお、ドライエツチングを行う前にＭｏＳｉオＯｘ膜上
にフォトレジストまたはＥＢレジストを４００〜６００
ｎｍの膜厚に塗布した後、光またはＥＢでパターン描
画するが、Ｍｏ５１ｇＯｘ膜３ｂはその膜厚が４０〜５
０ｎｍ程度であるので、電子ビーム描画の場合であって
もチャージアップの問題は生じない。In addition, before performing dry etching, a photoresist or EB resist with a resistivity of 400 to 600% is applied on the MoSiOx film.
After coating the Mo51gOx film 3b to a film thickness of 40 to 5 nm, a pattern is drawn using light or EB.
Since the thickness is approximately 0 nm, there is no charge-up problem even in the case of electron beam writing.
以上説明したようにこの発明によれば、透明基板上に順
に、Ｍｏ５ｉｔＯｘ膜、Ｍｏ５ｉｔ膜。As explained above, according to the present invention, a Mo5itOx film and a Mo5it film are sequentially formed on a transparent substrate.
ＭｏＳｉ、Ｏｘ膜を形成し、Ｍｏ５１ｇＯｘ膜の膜厚を
光源波長の１／１０程度に制約したので、高解像度のパ
ターン形成が可能となる。また、透明基板との接着性も
優れ、さらにドライエツチングが容易であるとともに、
エツチングスピードが上がり、量産に適した高品質のフ
ォトマス“りを得ることができる。Since MoSi and Ox films are formed and the thickness of the Mo51gOx film is limited to about 1/10 of the light source wavelength, high-resolution pattern formation is possible. In addition, it has excellent adhesion to transparent substrates, and is easy to dry-etch.
Etching speed increases and high quality photomass suitable for mass production can be obtained.
第１図はこの発明の一実施例によるフォトマスクの断面
図、第２図はＭｏ５ｉｔＯｘ膜とＭｏ５ｉ８膜の膜厚と
波長４３６ｎｍの光に対する反射率の関係を示すグラフ
、第３図は石英ガラス基板上の膜厚１１００ｎのＭｏ５
１ｇ膜上にＭｏ５ｔ、Ｏｘ膜の膜厚を変化させた場合の
反射率の変化を示すグラフ、第４図は従来のフォトマス
クの断面図であるや
１・・・透明ガラス基板、２・・・金属膜、３ａ、３ｂ
・・・モリブデンシリサイドの酸化膜（ＭｏＳｉ、０ｘ
Ｗ４）、４・・・モリブデンシリサイド［！（ＭｏＳｉ
ｘ膜）。
なお、図中同一符号は同一または相当部分を示す。
代理人 大暑 増雄 （ほか ２名）第１図
１・・・透明ガラス基板
３ａ、３ｂ・・・酸化されたモリブデンシリサイド膜４
・・・モリブデンシリサイド膜
第４図
１へ４
第２図
膜厚（ｎｍ）Fig. 1 is a cross-sectional view of a photomask according to an embodiment of the present invention, Fig. 2 is a graph showing the relationship between the film thickness of Mo5itOx film and Mo5i8 film and reflectance for light with a wavelength of 436 nm, and Fig. 3 is a quartz glass substrate. Mo5 with a film thickness of 1100n on top
A graph showing changes in reflectance when changing the film thickness of Mo5t and Ox films on a 1g film. Figure 4 is a cross-sectional view of a conventional photomask. 1...Transparent glass substrate, 2...・Metal film, 3a, 3b
... Molybdenum silicide oxide film (MoSi, 0x
W4), 4... Molybdenum silicide [! (MoSi
x membrane). Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Masuo Ohatsu (and 2 others) Figure 1 1...Transparent glass substrates 3a, 3b...Oxidized molybdenum silicide film 4
... Molybdenum silicide film Figure 4 To 1 4 Figure 2 Film thickness (nm)
Claims (2)
て、透明基板と、前記透明基板上に形成される酸化され
た遷移金属のシリサイド膜と、前記酸化された遷移金属
のシリサイド膜上に形成される遷移金属のシリサイド膜
と、前記遷移金属シリサイド膜上に形成される酸化され
た遷移金属のシリサイド膜とを備えた半導体装置製造用
のフォトマスク。(1) A photomask used for manufacturing a semiconductor device, which includes a transparent substrate, an oxidized transition metal silicide film formed on the transparent substrate, and a photomask formed on the oxidized transition metal silicide film. 1. A photomask for manufacturing a semiconductor device, comprising a transition metal silicide film and an oxidized transition metal silicide film formed on the transition metal silicide film.
λ＿０の１０分の１程度の膜厚に形成したことを特徴と
する特許請求の範囲第１項記載のフォトマスク。(2) The photomask according to claim 1, wherein the silicide film of the oxidized transition metal is formed to have a thickness of about 1/10 of the light source wavelength λ_0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4940587A JPH061367B2 (en) | 1987-03-03 | 1987-03-03 | Photo mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4940587A JPH061367B2 (en) | 1987-03-03 | 1987-03-03 | Photo mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63214754A true JPS63214754A (en) | 1988-09-07 |
| JPH061367B2 JPH061367B2 (en) | 1994-01-05 |
Family
ID=12830134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4940587A Expired - Fee Related JPH061367B2 (en) | 1987-03-03 | 1987-03-03 | Photo mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH061367B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007271774A (en) * | 2006-03-30 | 2007-10-18 | Hoya Corp | Mask blank and photomask |
| JP2007271720A (en) * | 2006-03-30 | 2007-10-18 | Hoya Corp | Mask blank and photomask |
| JP2009294681A (en) * | 2009-09-24 | 2009-12-17 | Shin-Etsu Chemical Co Ltd | Photomask blank and photomask |
| JP2010107921A (en) * | 2008-10-31 | 2010-05-13 | Hoya Corp | Photomask blank, photomask, and method of manufacturing the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5322426A (en) * | 1972-11-30 | 1978-03-01 | Canon Inc | Electrophotographic photo-sensitive body |
| JPS6195356A (en) * | 1984-10-16 | 1986-05-14 | Mitsubishi Electric Corp | Photomask material |
-
1987
- 1987-03-03 JP JP4940587A patent/JPH061367B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5322426A (en) * | 1972-11-30 | 1978-03-01 | Canon Inc | Electrophotographic photo-sensitive body |
| JPS6195356A (en) * | 1984-10-16 | 1986-05-14 | Mitsubishi Electric Corp | Photomask material |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007271774A (en) * | 2006-03-30 | 2007-10-18 | Hoya Corp | Mask blank and photomask |
| JP2007271720A (en) * | 2006-03-30 | 2007-10-18 | Hoya Corp | Mask blank and photomask |
| JP2010107921A (en) * | 2008-10-31 | 2010-05-13 | Hoya Corp | Photomask blank, photomask, and method of manufacturing the same |
| JP2009294681A (en) * | 2009-09-24 | 2009-12-17 | Shin-Etsu Chemical Co Ltd | Photomask blank and photomask |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH061367B2 (en) | 1994-01-05 |
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