JPS63214755A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPS63214755A JPS63214755A JP62049406A JP4940687A JPS63214755A JP S63214755 A JPS63214755 A JP S63214755A JP 62049406 A JP62049406 A JP 62049406A JP 4940687 A JP4940687 A JP 4940687A JP S63214755 A JPS63214755 A JP S63214755A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photomask
- silicide
- transition metal
- silicide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910021350 transition metal silicide Inorganic materials 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 abstract description 8
- 229910020968 MoSi2 Inorganic materials 0.000 abstract 3
- 238000010030 laminating Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 58
- 238000005530 etching Methods 0.000 description 11
- 229910016006 MoSi Inorganic materials 0.000 description 9
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical group [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 9
- 239000011651 chromium Substances 0.000 description 9
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、フォトマスクに関し、特、に半導体装置の
製造に使用するフォトマスクに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photomask, and particularly to a photomask used in the manufacture of semiconductor devices.
（従来の技術〕
半導体装置の製造に使用するマスクは、初期においては
ガラス基板に写真乳剤を塗布した乾板を用いていたが、
高集積化および微細化が進むにつれて、現在では例えば
、特開昭５７−１５７２４７号公報、特開昭５７−１５
７２４９号公報に示されるように、透明ガラス基板上に
クロム（Ｃｒ）などの金属薄膜が形成されたハードマス
クが広く使用されている。第４図は従来のフォトマスク
を示す断面図である。同図において、１は石英などの透
明ガラス基板で、このガラス基板上にＣｒなどの金属膜
２が、蒸着またはスパッタ法により６ −００〜８
００人の膜厚で形成されている。(Prior art) Masks used in the manufacture of semiconductor devices initially used dry plates made of glass substrates coated with photographic emulsion.
With the progress of high integration and miniaturization, currently, for example, Japanese Patent Laid-Open No. 157-157247, Japanese Patent Laid-Open No. 57-15
As shown in Japanese Patent No. 7249, hard masks in which a thin film of metal such as chromium (Cr) is formed on a transparent glass substrate are widely used. FIG. 4 is a sectional view showing a conventional photomask. In the figure, 1 is a transparent glass substrate such as quartz, and a metal film 2 such as Cr is coated on this glass substrate by vapor deposition or sputtering.
It is formed with a film thickness of 0.00 people.
半導体用フォトマスクは、金属ＷＡｚ上にフォトレジス
トまたは電子ビーム用レジストを塗布し、光または電子
ビームによりパターンを描画した後、現像、エツチング
などの工程を経て作られる。エツチングは金属１１！！
２がＣｒの場合、ウェット法では硝酸第二セリウムアン
モニウムと過塩素酸で行い、ドライ法では四塩化炭素（
ＣＣ１，）と酸素（０□）の混合ガスで行う、半導体装
置、特にｖＬＳＩなど高集積、微細パターンを有するデ
バイス用マスクの製造では、サイドエッチ効果が少ない
ドライエツチング法が有利である。A semiconductor photomask is made by applying a photoresist or an electron beam resist onto a metal WAz, drawing a pattern using light or an electron beam, and then performing steps such as development and etching. Etching is metal 11! !
When 2 is Cr, the wet method uses ceric ammonium nitrate and perchloric acid, and the dry method uses carbon tetrachloride (
In the manufacture of masks for semiconductor devices, particularly devices such as VLSIs with high integration and fine patterns, using a mixed gas of CC1,) and oxygen (0□), a dry etching method with less side etching effect is advantageous.
従来のＣｒマスクの製造には、ウェットエツチング法が
一般的であるが、サイドエッチ効果などにより高精度マ
スクの製造が困難であり、またドライエツチング法では
Ｃｒのエツチング速度が約１００人／ｍｘｎ以下である
ことから、レジストとの選択比が悪くなってフォトマス
クの量産に不適であった。また、Ｃｒの場合、石英ガラ
ス基板との接着性が悪く、微細パターンが洗浄の工程に
おいて剥がれるという問題もあった。゛
上記問題点を解決する手段として、例えば特願昭５９−
６１３７２号明細書に見られるように、遷移金属のシリ
サイド膜をマスク材料として用いる方法が考えられる。The conventional wet etching method is commonly used to manufacture Cr masks, but it is difficult to manufacture high-precision masks due to side etching effects, etc., and the dry etching method has a Cr etching rate of approximately 100 etchings/mxn or less. Therefore, the selectivity with the resist was poor, making it unsuitable for mass production of photomasks. Further, in the case of Cr, there was a problem that the adhesion to the quartz glass substrate was poor, and the fine pattern was peeled off during the cleaning process.゛As a means to solve the above problems, for example,
As seen in the specification of No. 61372, a method using a transition metal silicide film as a mask material can be considered.
このようにするζ、石英ガラス基板中のシリコン（Ｓｔ
）と、マスク材料としての遷移金属のシリサイド中のＳ
ｔとが有効に結合して接着強度の強いものが得られる。In this way, ζ is the silicon (St) in the quartz glass substrate.
) and S in the transition metal silicide as a mask material.
t are effectively bonded to each other, resulting in a product with strong adhesive strength.
また、レジストはモリブデンシリサイド（以下、Ｍｏ５
ｔとする）を例にすると、四フッ化炭素（ＣＦ、）とＯ
ｔの混合ガスプラズマにより、Ｃｒに比べて容易にドラ
イエツチングができる（エツチング速度〜１０００人／
ｍｔｎ）。In addition, the resist is molybdenum silicide (hereinafter referred to as Mo5
For example, carbon tetrafluoride (CF, ) and O
Dry etching is easier than with Cr using a mixed gas plasma of
mtn).
しかしながら、ＭｏＳｉ膜は光に対する反射率が５０％
前後と高く、ウェハへのパターン転写の際にパターンの
解像性をウェハとマスクの間の光の多重散乱で低下させ
ることになり、サブミクロンパターンを有する超ＬＳＩ
デバイスの製造に困難を来すことになる。However, MoSi film has a reflectance of 50% for light.
When the pattern is transferred to the wafer, the resolution of the pattern is reduced due to multiple scattering of light between the wafer and the mask.
This will cause difficulties in manufacturing the device.
この発明は、上記従来の問題点を解消するためなされた
もので、ドライエツチングが容易で、かつ透明基板との
接着性もあり、しかもマスクの反射率も低い高品質のフ
ォトマスクを提供することを目的とする。The present invention was made to solve the above-mentioned conventional problems, and it is an object of the present invention to provide a high-quality photomask that is easy to dry-etch, has good adhesion to a transparent substrate, and has low mask reflectance. With the goal.
（問題点を解決するための手段］
この発明に係るフォトマスクは、透明基板と、この透明
基板上に形成された遷移金属のシリサイド膜と、この酸
化膜上に形成された遷移金属のシリサイド膜とその酸化
膜とで構成したものである。(Means for Solving the Problems) A photomask according to the present invention includes a transparent substrate, a transition metal silicide film formed on the transparent substrate, and a transition metal silicide film formed on the oxide film. and its oxide film.
さらに光の多重散乱をできるだけ抑制するために酸化膜
の膜厚を光源波長λ。の１／１０程度に構成したちので
る。Furthermore, in order to suppress multiple scattering of light as much as possible, the thickness of the oxide film is adjusted to the light source wavelength λ. The composition is about 1/10 of that of the original.
この発明において、遷移金属のシリサイド膜およびその
酸化膜は、光源波長λ。に対する反射率が最小になる膜
厚を有しており、高い解像性が得られるばかりでなく、
容易にドライエツチングができ、かつ透明基板との接着
性が良いので、マスク洗浄のときに微細パターンが剥が
れにくいものとなる。In this invention, the transition metal silicide film and its oxide film have a light source wavelength λ. It has a film thickness that minimizes the reflectance for
Since it can be easily dry etched and has good adhesion to the transparent substrate, the fine pattern is difficult to peel off during mask cleaning.
第１図は、この発明の一実施例によるフォトマスクの断
面図である。同図において、石英ガラスなどの透明ガラ
ス基板１上には、モリブデンシリサイド膜（以下、Ｍｏ
Ｓｉ＊Ｗ！４）３が約、１００ ｎｍ程度の膜厚で形成
され、さらにその上にモリブテンシリサイドの酸化膜（
以下、ＭｏＳｉ、Ｏｘ膜という）４が、約４０〜５０ｎ
ｍ程度（光源波長Ｇ線（４３６ｎｍ）の１／１０程度）
の膜厚で形成されている。FIG. 1 is a sectional view of a photomask according to an embodiment of the present invention. In the figure, a molybdenum silicide film (hereinafter referred to as Mo
Si*W! 4) 3 is formed with a thickness of approximately 100 nm, and a molybdenum silicide oxide film (
(hereinafter referred to as MoSi, Ox film) 4 is approximately 40 to 50n
m (about 1/10 of the light source wavelength G line (436 nm))
It is formed with a film thickness of .
これらのＭｏ５ｔ、膜３とＭｏ５ｔ、Ｏｘ膜４は、スパ
ッタ方などによって容易に形成できる。These Mo5t film 3 and Mo5t film 4 can be easily formed by sputtering or the like.
例えば、Ｍｏ５ｔ、ターゲットとして、アルゴン（Ａ
ｒ ）プラズマでスパッタしＭｏ５ｔ、膜３を形成し、
さらにＡｒと０８ガスを任意の比率で混合したプラズマ
でスパッタすると、Ｍｏ５ｉｚと０８が適当な比率で化
合してＭｏＳｉ、Ｏｘ膜４が形成される。また、予め適
当な比率で作成したＭ ｏ Ｓ ｌｔｏ ｘのターゲッ
トをＡｒプラズマでスパッタして形成することもできる
。そして、Ｍ。For example, Mo5t, argon (A
r) Sputtering with plasma to form Mo5t film 3,
Furthermore, when sputtering is performed using a plasma containing Ar and 08 gases mixed at an arbitrary ratio, Mo5iz and 08 are combined at an appropriate ratio to form the MoSi, Ox film 4. Alternatively, it can also be formed by sputtering a MoS lto x target prepared in advance at an appropriate ratio using Ar plasma. And M.
５ｉｌＯｘのＸの値が大きいほど低反射率となるが、徐
々に絶縁性を有してくる。The larger the value of X in 5ilOx, the lower the reflectance, but it gradually becomes more insulating.
また、電子ビームでマスクを製作するには、チャージア
ップの問題があり、数にΩ以下になるようにＸを制御す
る必要がある０例えば、Ｘが０゜１以下であると反射率
が３０％以下になり、抵抗も数にΩ程度の好ましい状態
となる。また、光の反射は膜表面で特に大きいため、表
面近傍に近づくにつれてＸの濃度が大きくなるようにＯ
ｔを制御してもよい。In addition, when manufacturing a mask with an electron beam, there is a charge-up problem, and it is necessary to control X so that the number is less than Ω.For example, if X is less than 0°1, the reflectance will be 30 % or less, and the resistance is also in a desirable state of approximately Ω. In addition, since the reflection of light is particularly large at the film surface, O
t may be controlled.
第２図は石英ガラス基板上にＭｏ５ｉｚ膜とＭｏ５ｉｚ
ＯＸ膜を各々単独に形成した場合の膜厚と反射率の関係
を示している。光源波長は半導体製造でよく使用されて
いるＧ線（λ。−４３６ｎｍ）を選択している。Ｍ Ｏ
Ｓ ｉ を膜の反射率は５０％前後の値であるが、Ｍｏ
Ｓｉ、Ｏｘ膜は３０％程度になる。Ｍｏ５ｉｔＯｘ膜が
薄＜１１００ｎ以下では、反射率は直線的に減少し、膜
厚が零になると石英ガラス基板の反射率は７０％になる
。Figure 2 shows a Mo5iz film and a Mo5iz film on a quartz glass substrate.
It shows the relationship between film thickness and reflectance when each OX film is formed individually. The wavelength of the light source is G-line (λ: -436 nm), which is often used in semiconductor manufacturing. M.O.
The reflectance of the film for S i is around 50%, but for Mo
The Si and Ox films are about 30%. When the Mo5itOx film is thin <1100 nm or less, the reflectance decreases linearly, and when the film thickness becomes zero, the reflectance of the quartz glass substrate becomes 70%.
ＭｏＳｉ、Ｏｘのみであると、透過率が多少あるので、
光学濃度３以上を得るためにはＭｏ５ｔ。If only MoSi and Ox are used, there will be some transmittance, so
Mo5t to obtain an optical density of 3 or more.
とＭｏＳｉ□Ｏｘを組み合わせた２層膜にする必要があ
る。It is necessary to form a two-layer film that combines MoSi□Ox and MoSi□Ox.
第３図は石英ガラス基板上の膜厚１１００ｎのＭｏ５ｉ
ｚ膜上にＭｏ５ｔ、Ｏｘ膜を形成し、２層膜にしたとき
のＭｏＳｉ、Ｏｘ膜の膜厚と反射率の関係を示すグラフ
である０図に示すように、スパッタの全圧が高くなると
反射率が低下し、より低反射の傾向を示している。Ｍｏ
５ｉｔＯｘ膜の膜厚が、４０〜５０ｎｍ近傍で極小値を
示している。この膜厚は光源波長の１ｉｌ０程度に相当
する。すなわちＧｅｌの波長４３６ｎｍの光に対する反
射率を極小にするためにはＭｏ５ｉｔ膜上に形成される
ＭｏＳｉ、Ｏｘ膜の膜厚を４０〜５０ｎｍに制御すれば
よいことになる。Figure 3 shows Mo5i with a film thickness of 1100n on a quartz glass substrate.
As shown in Figure 0, which is a graph showing the relationship between the film thickness and reflectance of the MoSi and Ox films when a Mo5t and Ox film is formed on the Z film to form a two-layer film, when the total sputtering pressure increases, The reflectance decreases, showing a tendency for lower reflection. Mo
The thickness of the 5itOx film shows a minimum value in the vicinity of 40 to 50 nm. This film thickness corresponds to about 1il0 of the light source wavelength. That is, in order to minimize the reflectance of Gel for light with a wavelength of 436 nm, the thickness of the MoSi and Ox films formed on the Mo5it film should be controlled to 40 to 50 nm.
上記のように、Ｍ ｏ Ｓ ｉ ｚ ＪｌｉとＭｏ５ｉ
ｚＯｘ膜との２層膜にすることにより、通常のＭｏ５ｉ
ｚ膜をマスク材料として用いた場合に比べて反射率が低
下するので、多重散乱によるパターンの解像性低下を避
けることができる。また、シリサイド化された金属は、
透明基板（Ｓ ｉ Ｏｔ、 Ａ １ ＊０３など）特に
、石英ガラス基板との接着性が良く、マスク洗浄によっ
て微細パターンが剥がれなくなり、フォトマスクとして
の寿命が長くなるという利点がある。As mentioned above, M o S i z Jli and Mo5i
By making it a two-layer film with a zOx film, ordinary Mo5i
Since the reflectance is lower than when the Z film is used as a mask material, it is possible to avoid a decrease in pattern resolution due to multiple scattering. In addition, silicided metals are
Transparent substrates (S i Ot, A 1 *03, etc.) have particularly good adhesion to quartz glass substrates, and have the advantage that fine patterns do not peel off during mask cleaning, and the life of the photomask is extended.
さらに、Ｍｏ Ｓ １ｚｏｘＪ１！４のエツチングは、
ドライエツチング法で容易に行うことができる。Furthermore, the etching of Mo S 1zoxJ1!4 is
This can be easily done by dry etching.
例えば、Ｍｏ５ｔ！Ｏｘは、ＣＦａ ＋Ｏｔ （２％）
の混合ガスを使用し、０ 、 ２ Ｔｏｒｒの真空度、
３００Ｗの条件下では、約５００人／＋ｗｉｎのエツチ
ングスピードでエツチングが終了する。このエツチング
スピードは従来のＣｒのドライエツチングスピードに比
べ約５倍であり、フォトマスクの量産に適していること
がわかる。For example, Mo5t! Ox is CFa +Ot (2%)
using a mixed gas of 0 to 2 Torr,
Under the condition of 300W, etching is completed at an etching speed of about 500 people/+win. This etching speed is approximately 5 times higher than the conventional dry etching speed for Cr, and is found to be suitable for mass production of photomasks.
なお、ＭｏＳｉ、Ｏｘ膜４は数にΩの導電性を持たせで
あるため、電子ビーム描画の場合であってもチャージア
ップの問題は生じない。Incidentally, since the MoSi and Ox films 4 have conductivity in the order of Ω, the problem of charge-up does not occur even in the case of electron beam lithography.
また、上記実施例では、Ｍｏ５ｉｌと波長４３６ｎｍに
限定して説明したが、他の金属シリサイドとその酸化膜
についても光源波長の１ｉｌ０程度の酸化膜あ膜厚にし
てよく、上記実施例と同様の効果を奏する。Further, in the above embodiment, the explanation was limited to Mo5il and the wavelength of 436 nm, but the oxide film thickness of other metal silicides and their oxide films may be made to be about 1il0 of the light source wavelength, and the same as in the above embodiment may be used. be effective.
更に、Ｍｏ５ｔ、マスクでは光源波長を４３６ｎｍとし
て説明したが、４３６ ｎｍより短波長であってもＭｏ
Ｓｉ、上のその酸化膜が波長の１ｉｌ０程度であれば上
記実施例と同様の効果を奏する。Furthermore, although the Mo5t mask has been explained assuming that the light source wavelength is 436 nm, even if the wavelength is shorter than 436 nm, Mo
If the oxide film on Si has a wavelength of about 1il0, the same effect as in the above embodiment can be obtained.
以上のようにこの発明によれば、透明基板上のモリブデ
ンシリサイド股上に、光源波長Ｇ線（４３５ｎｍ）の１
ｉｌ０程度に相当する４０〜５０ｎｍの膜厚の酸化モリ
ブデンシリサイド膜を形成したので反射率が極小になり
、これに伴って高解像度のパターン形成が可能となる。As described above, according to the present invention, 1 of the light source wavelength G line (435 nm) is placed on the top of the molybdenum silicide on the transparent substrate.
Since a molybdenum oxide silicide film having a thickness of 40 to 50 nm, which corresponds to about il0, is formed, the reflectance becomes minimal, and accordingly, high-resolution pattern formation becomes possible.
また、ドライエツチングが容易でエツチングスピードが
上がることから、信転性の高いフォトマスクを得ること
ができる。Furthermore, since dry etching is easy and the etching speed is increased, a photomask with high reliability can be obtained.
第１図はこの発明の一実施例によるフォトマスクの断面
図、第２図は酸化モリブデンシリサイド（ＭｏＳｉ、Ｏ
ｘ）の膜厚と反射率の関係を示すグラフ、第３図はモリ
ブデンシリサイド（ＭｏＳ１１）と酸化モリブデンシリ
サイド（Ｍｏｓｔ。
Ｏｘ）膜ぼ２層にしたときの酸化モリブデンシリサイド
膜の膜厚と反射率の関係を示すグラフ、第４図は従来の
フォトマスクの断面図である。
１・・・透明ガラス基板、２・・・金属膜、３・・・モ
リブデンシリサイドの膜、４・・・モリブデンシリサイ
ド酸化膜。
なお、図中同一符号は同一または相当部分を示す。
代理人 大暑 増ｍ （ほか ２名）第１図
１・・・透明ガラス基板
３・・・モリブデンシリサイド膜
４・・・酸化モリブデンシリサイド膜
第４図
第２図
膜厚（ｎｍ）
第３図
Ｍｏ−３ｉ−０膜厚（ｎｍ）FIG. 1 is a sectional view of a photomask according to an embodiment of the present invention, and FIG. 2 is a sectional view of a photomask according to an embodiment of the present invention.
x) A graph showing the relationship between film thickness and reflectance. Figure 3 shows the film thickness and reflectance of molybdenum oxide silicide film when there are two layers: molybdenum silicide (MoS11) and molybdenum oxide silicide (Most Ox). FIG. 4 is a cross-sectional view of a conventional photomask. DESCRIPTION OF SYMBOLS 1... Transparent glass substrate, 2... Metal film, 3... Molybdenum silicide film, 4... Molybdenum silicide oxide film. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Masu Oka (2 others) Figure 1 1...Transparent glass substrate 3...Molybdenum silicide film 4...Molybdenum oxide silicide film Figure 4Figure 2 Film thickness (nm) Figure 3Mo -3i-0 film thickness (nm)
Claims (4)
属のシリサイド膜と、酸化されたシリサイド膜とを備え
た半導体装置製造用のフォトマスク。(1) A photomask for manufacturing a semiconductor device, comprising a transparent substrate, a transition metal silicide film provided on the transparent substrate, and an oxidized silicide film.
タル（Ｔａ）またはタングステン（Ｗ）のシリサイド膜
であることを特徴とする特許請求の範囲第１項記載のフ
ォトマスク。(2) The photomask according to claim 1, wherein the silicide film is a silicide film of molybdenum (M_o), tantalum (Ta), or tungsten (W).
０程度の膜厚を有することを特徴とする特許請求の範囲
第１項記載のフォトマスク。(3) The oxide silicide film is 1/1 of the exposure light source wavelength λ_0
2. The photomask according to claim 1, wherein the photomask has a film thickness of about 0.
とを特徴とする特許請求の範囲第１項記載のフォトマス
ク。(4) The photomask according to claim 1, wherein the transparent substrate is made of quartz glass or sapphire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4940687A JPH0644146B2 (en) | 1987-03-03 | 1987-03-03 | Photo mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4940687A JPH0644146B2 (en) | 1987-03-03 | 1987-03-03 | Photo mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63214755A true JPS63214755A (en) | 1988-09-07 |
| JPH0644146B2 JPH0644146B2 (en) | 1994-06-08 |
Family
ID=12830165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4940687A Expired - Fee Related JPH0644146B2 (en) | 1987-03-03 | 1987-03-03 | Photo mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0644146B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05181259A (en) * | 1991-09-05 | 1993-07-23 | Mitsubishi Electric Corp | Photomask and production thereof |
| JP2007271720A (en) * | 2006-03-30 | 2007-10-18 | Hoya Corp | Mask blank and photomask |
| JP2007271774A (en) * | 2006-03-30 | 2007-10-18 | Hoya Corp | Mask blank and photomask |
| JP2009086383A (en) * | 2007-09-29 | 2009-04-23 | Hoya Corp | Gray tone mask, pattern transfer method and gray tone mask blank |
| JP2009086381A (en) * | 2007-09-29 | 2009-04-23 | Hoya Corp | Method for manufacturing gray tone mask and gray tone mask, and pattern transfer method |
| JP2009086380A (en) * | 2007-09-29 | 2009-04-23 | Hoya Corp | Gray tone mask blank, method for manufacturing gray tone mask and gray tone mask, and pattern transfer method |
| JP2012078441A (en) * | 2010-09-30 | 2012-04-19 | Hoya Corp | Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
| JP2013065036A (en) * | 2012-12-05 | 2013-04-11 | Hoya Corp | Method for manufacturing semiconductor device |
| JP2015007788A (en) * | 2014-08-06 | 2015-01-15 | Hoya株式会社 | Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6252551A (en) * | 1985-08-30 | 1987-03-07 | Mitsubishi Electric Corp | Photomask material |
-
1987
- 1987-03-03 JP JP4940687A patent/JPH0644146B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6252551A (en) * | 1985-08-30 | 1987-03-07 | Mitsubishi Electric Corp | Photomask material |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05181259A (en) * | 1991-09-05 | 1993-07-23 | Mitsubishi Electric Corp | Photomask and production thereof |
| JP2007271720A (en) * | 2006-03-30 | 2007-10-18 | Hoya Corp | Mask blank and photomask |
| JP2007271774A (en) * | 2006-03-30 | 2007-10-18 | Hoya Corp | Mask blank and photomask |
| JP2009086383A (en) * | 2007-09-29 | 2009-04-23 | Hoya Corp | Gray tone mask, pattern transfer method and gray tone mask blank |
| JP2009086381A (en) * | 2007-09-29 | 2009-04-23 | Hoya Corp | Method for manufacturing gray tone mask and gray tone mask, and pattern transfer method |
| JP2009086380A (en) * | 2007-09-29 | 2009-04-23 | Hoya Corp | Gray tone mask blank, method for manufacturing gray tone mask and gray tone mask, and pattern transfer method |
| TWI402611B (en) * | 2007-09-29 | 2013-07-21 | Hoya Corp | Method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern |
| TWI448816B (en) * | 2007-09-29 | 2014-08-11 | Hoya Corp | Gray tone mask blank, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern |
| JP2012078441A (en) * | 2010-09-30 | 2012-04-19 | Hoya Corp | Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
| JP2013065036A (en) * | 2012-12-05 | 2013-04-11 | Hoya Corp | Method for manufacturing semiconductor device |
| JP2015007788A (en) * | 2014-08-06 | 2015-01-15 | Hoya株式会社 | Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0644146B2 (en) | 1994-06-08 |
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