TWI448816B - Gray tone mask blank, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern - Google Patents
Gray tone mask blank, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern Download PDFInfo
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- TWI448816B TWI448816B TW097137029A TW97137029A TWI448816B TW I448816 B TWI448816 B TW I448816B TW 097137029 A TW097137029 A TW 097137029A TW 97137029 A TW97137029 A TW 97137029A TW I448816 B TWI448816 B TW I448816B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
本發明係關於使用光罩而在被轉印體上的光阻上形成設有不同阻劑膜厚部分之轉印圖案的圖案轉印方法、該圖案轉印方法所使用之灰階光罩及其製造方法、以及製造該灰階光罩所使用的灰階光罩坯料。The present invention relates to a pattern transfer method in which a transfer pattern having portions of different resist film thicknesses is formed on a photoresist on a transfer target using a photomask, a gray scale mask used in the pattern transfer method, and A method of manufacturing the same, and a gray scale mask blank used in the production of the gray scale mask.
目前，在液晶顯示裝置(Liquid Crystal Display：以下稱之為LCD)的領域中，薄膜電晶體液晶顯示裝置(ThinFilm Transistor Liquid Crystal Display：以下稱之為TFT-LCD)相較於CRT(陰極射線管)，具有容易形成為薄型且消耗電力較低的優點，因而在目前商品化乃急速發展中。TFT-LCD係具有在排列成矩陣狀的各像素上排列有TFT的構造的TFT基板、及與各像素相對應，排列有紅、綠及藍之像素圖案的彩色濾光片在有液晶相介於其間之下相疊合的概略構造。在TFT-LCD中，製造步驟數多，光是TFT基板亦使用了5至6片光罩來製造。在這樣的狀況下，已提案有藉由使用具有遮光部、透光部及半透光部的光罩(稱為灰階光罩)，以刪減在製造TFT基板時所利用的光罩片數的方法(例如日本特開2005-37933號公報)。At present, in the field of liquid crystal display devices (hereinafter referred to as LCDs), thin film transistor liquid crystal display devices (hereinafter referred to as TFT-LCDs) are compared with CRTs (cathode ray tubes). It has the advantage of being easily formed into a thin type and having low power consumption, and thus the current commercialization is rapidly developing. A TFT-LCD has a TFT substrate having a structure in which TFTs are arranged in a matrix arranged in a matrix, and a color filter in which pixel patterns of red, green, and blue are arranged corresponding to respective pixels in a liquid crystal phase. A schematic structure that overlaps underneath. In the TFT-LCD, the number of manufacturing steps is large, and the TFT substrate is also manufactured by using 5 to 6 photomasks. Under such circumstances, it has been proposed to use a photomask (referred to as a gray scale mask) having a light shielding portion, a light transmitting portion, and a semi-light transmitting portion to eliminate the mask sheet used in manufacturing the TFT substrate. A method of the number (for example, Japanese Laid-Open Patent Publication No. 2005-37933).
在此，所謂灰階光罩係指具有：露出透明基板的透光部；在透明基板上形成有用以將曝光光遮光之遮光膜的遮光部；及在透明基板上形成有遮光膜或半透光膜，而將透明基板的光透過率設為100%時，使透過光量減低而透過預定量的光之半透光部(以下亦稱之為灰階部)者。此外，所謂半透光部係指當使用光罩而將圖案轉印在被轉印體時，使所透過的曝光光的透過率減低預定量，以控制被轉印體上之光阻膜在顯影後的殘膜量的部分。以這樣的灰階光罩而言，係有在透明基板上形成具有預定光透過率之半透光膜者作為半透光部，或者在透明基板上之遮光膜或半透光膜，在曝光條件下形成有解析界限以下之微細圖案者。Here, the gray scale mask has a light-transmitting portion that exposes a transparent substrate, a light-shielding portion that forms a light-shielding film that shields exposure light on the transparent substrate, and a light-shielding film or a semi-transparent film formed on the transparent substrate. In the light film, when the light transmittance of the transparent substrate is 100%, the amount of transmitted light is reduced and a predetermined amount of light is transmitted through a semi-transmissive portion (hereinafter also referred to as a gray scale portion). In addition, the semi-transmissive portion means that when a pattern is transferred to a transfer target by using a photomask, the transmittance of the transmitted exposure light is reduced by a predetermined amount to control the photoresist film on the transfer target. The portion of the residual film amount after development. In the case of such a gray scale mask, a semi-transmissive film having a predetermined light transmittance on a transparent substrate is used as a semi-transmissive portion, or a light-shielding film or a semi-transparent film on a transparent substrate is exposed. Under the condition, a fine pattern having a resolution limit or less is formed.
第1圖係用以說明使用灰階光罩之圖案轉印方法的剖面圖。第1圖所示之灰階光罩20係用以在被轉印體30上形成膜厚呈階段性不同的阻劑圖案33者。在第1圖中係顯示使用灰階光罩20，在被轉印體30上形成有膜厚不同之阻劑圖案33的狀態。其中，第1圖中的元件符號32A、32B係表示在被轉印體30中層積在基板31上的膜。Fig. 1 is a cross-sectional view for explaining a pattern transfer method using a gray scale mask. The gray scale mask 20 shown in Fig. 1 is for forming a resist pattern 33 having a different film thickness on the transfer target body 30. In the first drawing, a state in which the resist pattern 33 having a different film thickness is formed on the transfer target 30 is shown using the gray scale mask 20. Here, the reference numerals 32A and 32B in the first drawing denote the film laminated on the substrate 31 in the transfer target body 30.
第1圖所示之灰階光罩20係具有：使用該灰階光罩20時使曝光光遮光(透過率大致為0%)的遮光部21；露出透明基板24表面且使曝光光透過的透光部22；及當將透光部的曝光光透過率設為100%時使透過率減低為10至80%左右的半透光部23。第1圖所示之半透光部23係由形成在透明基板24上之光半透過性的半透光膜所構成，但是亦可形成當使用光罩時在曝光條件下超過解析界限之微細圖案而構成。The gray scale mask 20 shown in Fig. 1 has a light shielding portion 21 that shields exposure light (a transmittance of approximately 0%) when the gray scale mask 20 is used, and exposes the surface of the transparent substrate 24 to transmit the exposure light. The light transmitting portion 22; and the semi-light transmitting portion 23 which reduces the transmittance to about 10 to 80% when the exposure light transmittance of the light transmitting portion is 100%. The semi-transmissive portion 23 shown in Fig. 1 is composed of a semi-transmissive semi-transparent film formed on the transparent substrate 24, but may also form a fineness exceeding the resolution limit under exposure conditions when the photomask is used. Made up of patterns.
當使用如上所述之灰階光罩20時，在遮光部21曝光光並未實質透過，在半透光部23曝光光將減低。因此，塗佈在被轉印體30上的阻劑膜(正型光阻膜)係在轉印後，經過顯影時，形成在與遮光部21相對應的部分具有較厚的膜厚，在與半透光部23相對應的部分具有較薄的膜厚，在與透光部22相對應的部分，並未具有膜(亦即實質上未產生殘膜)的阻劑圖案33。亦即，阻劑圖案33係具有呈階段性不同(亦即具有段差)的膜厚。When the gray scale mask 20 as described above is used, the exposure light is not substantially transmitted through the light blocking portion 21, and the exposure light is reduced in the semi-light transmitting portion 23. Therefore, the resist film (positive type resist film) applied to the transfer target body 30 is formed to have a thick film thickness at a portion corresponding to the light shielding portion 21 after the transfer, after development. The portion corresponding to the semi-transmissive portion 23 has a thin film thickness, and the resist pattern 33 having no film (that is, substantially no residual film is formed) is not present in the portion corresponding to the light transmitting portion 22. That is, the resist pattern 33 has a film thickness which is different in stages (that is, has a step).
接著，在第1圖所示之阻劑圖案33之不存在膜的部分，對被轉印體30中之例如膜32A及32B實施第1蝕刻，藉由灰化(ashing)等將阻劑圖案33之膜厚較薄的部分去除，且在該部分，對被轉印體30中之例如膜32B實施第2蝕刻。如此一來，使用1片灰階光罩20，在被轉印體30上形成膜厚呈階段性不同的阻劑圖案33，藉此實施習知之光罩2片份的步驟，而刪減光罩片數。Next, in the portion where the film is not present in the resist pattern 33 shown in Fig. 1, the first etching is performed on, for example, the films 32A and 32B in the transfer target 30, and the resist pattern is formed by ashing or the like. A portion having a thin film thickness of 33 is removed, and in this portion, for example, the film 32B in the transfer target body 30 is subjected to the second etching. In this manner, by using one gray scale mask 20, a resist pattern 33 having a film thickness different in stages is formed on the transfer target 30, whereby the steps of the conventional photomask 2 are performed, and the light is cut off. The number of covers.
如上所示之光罩係極為有效適用於製造顯示裝置，尤其是液晶顯示裝置的薄膜電晶體。例如，可藉由遮光部21形成源極、汲極部，藉由半透光部23形成通道部。The reticle as shown above is extremely effective for the manufacture of display devices, especially thin film transistors for liquid crystal display devices. For example, the source and the drain are formed by the light shielding portion 21, and the channel portion is formed by the semi-light transmitting portion 23.
但是，一般在使用光罩而曝光於被轉印體時，係必須考慮到因曝光光的反射所造成的不良影響。例如，曝光光在透過光罩後在被轉印體表面反射，在光罩表面(圖案形成面)或背面反射，而再次照射在被轉印體的情形。此外，曝光光在曝光機內的任何部位中反射，其在光罩表面反射，而照射在被轉印體上等，藉此亦會有產生散射光的情形。如上所示之情形，在被轉印體會產生非本意的映入，而妨礙正確的圖案轉印。因此，在曝光機的光學系統一般係會施行曝光時的散射光對策。此外，在曝光機係設有例如光罩對曝光光的表面反射率若為10±5%，則可在不會有散射光的影響的情形下進行轉印的基準。此外，在如二元式光罩(binary mask)等所示未具有半透光膜的光罩中，亦必須藉由施行在作為最上層的遮光膜設置反射防止膜等之反射防止措施，使用使上述表面反射率15%以下之基準十分充足之類的光罩。However, generally, when a photomask is used and exposed to a transfer target, it is necessary to take into consideration the adverse effect caused by the reflection of the exposure light. For example, the exposure light is reflected on the surface of the transfer target after passing through the reticle, and is reflected on the surface (pattern forming surface) or the back surface of the reticle, and is irradiated again to the object to be transferred. Further, the exposure light is reflected in any portion of the exposure machine, which is reflected on the surface of the reticle, and is irradiated onto the object to be transferred, etc., whereby scattered light is generated. In the case as described above, unintentional reflection occurs in the transferred body, which hinders proper pattern transfer. Therefore, in the optical system of the exposure machine, the countermeasure against scattered light at the time of exposure is generally performed. Further, in the exposure machine, for example, if the surface reflectance of the mask to the exposure light is 10±5%, the reference for transfer can be performed without the influence of the scattered light. In addition, in a reticle that does not have a semi-transmissive film, such as a binary mask, it is necessary to provide a reflection preventing film or the like by providing a light-shielding film as the uppermost layer. A mask having a sufficient surface reflectance of 15% or less is sufficient.
另一方面，如上所述已知一種以在被轉印體上形成具有膜厚呈階段性或連續性不同的部分的阻劑圖案的目的之下，就圖案上的特定部位選擇性地減低曝光光的透過率，而可控制曝光光之透過的光罩的灰階光罩。在如此之灰階光罩中，係已知一種在透過曝光光之一部分的半透光部使用半透光膜者。在該半透光部使用半透光膜的灰階光罩中，係藉由形成在光罩的圖案構成，使該半透光膜取代遮光膜，如第1圖所示，存在有在光罩的最上層露出的部分。該半透光膜係基於在所希望的透過率範圍內透過曝光光的必要性，並無法適用直接層積如上述之二元式光罩之類的反射防止膜。此外，在使用半透光膜的灰階光罩中，半透光部對曝光光的表面反射率係依其組成及膜厚，亦有無法避免超過10%的情形。On the other hand, as described above, it is known to selectively reduce the exposure of a specific portion on the pattern for the purpose of forming a resist pattern having a portion having a film thickness different in stage or continuity on the object to be transferred. The light transmittance of the light, and the gray scale mask of the mask that can control the transmission of the exposure light. In such a gray scale mask, a semi-transmissive film is used in a semi-transmissive portion that transmits a part of the exposure light. In the gray scale mask using the semi-transmissive film in the semi-transmissive portion, the semi-transmissive film is replaced by the light-shielding film by the pattern formed in the photomask. As shown in FIG. 1, there is light in the light. The exposed portion of the uppermost layer of the cover. The semi-transmissive film is based on the necessity of transmitting exposure light within a desired transmittance range, and is not applicable to an antireflection film such as the above-described binary photomask. Further, in the gray scale mask using the semi-transmissive film, the surface reflectance of the semi-transmissive portion to the exposure light depends on the composition and the film thickness, and it is inevitable that it exceeds 10%.
相反地，使用如上所示之灰階光罩，在被轉印體進行圖案轉印時，以被轉印體上之阻劑而言，相較於未存在有半透光部之一般的二元式光罩等光罩，可使用敏感度的曝光光量依存性較小、或顯影特性之曝光光量依存性較低者。如上所示，藉由使用曝光光量依存性較低的阻劑，可較為容易地將阻劑的殘膜量控制在所希望的範圍內。在曝光光量依存性較低的阻劑中，由於對其光量之光敏感度的變化較小，因此因曝光時之散射光而映入至圖案的影響係比較小。但是，發明人發現到如此之灰階光罩中的反射特性係有必要以有別於上述二元式光罩的觀點來進行檢討。On the contrary, when the gray scale reticle as shown above is used, when the transfer target is subjected to pattern transfer, the resist on the transferred body is compared with the general one in which the semi-transmissive portion is not present. A photomask such as a photomask can be used with a small amount of exposure light sensitivity or a low dependency of development characteristics. As described above, by using a resist having a low dependency on the amount of exposure light, the residual film amount of the resist can be easily controlled within a desired range. In the resist having a low dependency on the amount of exposure light, since the change in the light sensitivity to the amount of light is small, the influence of the scattered light upon exposure to the pattern is relatively small. However, the inventors have found that the reflection characteristics in such a gray scale mask need to be reviewed from the viewpoint of being different from the above-described binary mask.
具體而言，如上所述，因半透光膜的曝光光反射率所造成之散射光的影響較小，但是在製造灰階光罩的階段中，對用在圖案化之描繪光的表面反射率可知係極為重要的。其係基於當藉由描繪光在形成於半透光膜上的阻劑膜描繪圖案時，若半透光膜表面中的表面反射率過高，即無法正確描繪圖案的尺寸之故。Specifically, as described above, the influence of the scattered light due to the exposure light reflectance of the semi-transmissive film is small, but in the stage of manufacturing the gray scale mask, the surface reflection for the patterned light is used for reflection. The rate is extremely important. This is based on the fact that when the pattern is drawn by the resist film formed on the semi-transmissive film by drawing light, if the surface reflectance in the surface of the semi-transmissive film is too high, the size of the pattern cannot be correctly drawn.
亦即，發現若半透光膜對描繪光的表面反射率較大，對形成在半透光膜上的阻劑膜進行圖案描繪時，在灰階光罩坯料的阻劑膜內，容易發生因描繪光而起的駐波，在阻劑膜的厚度方向，曝光量會成為不均一，因此使得所形成的阻劑圖案的剖面形狀混亂，且線寬變得不均一。此外，亦可知將具有不均一線寬的阻劑圖案作為光罩所形成的半透光膜的圖案，或者其更加下方之遮光膜的圖案的線寬精度容易劣化。此外，亦發現當對灰階光罩坯料進行圖案描繪時，在阻劑膜及其下層(在此例如為半透光膜)的界面中，若描繪光的反射光量較大，其部位附近的阻劑的曝光量會變大。實際上，該效果之呈現方式亦依膜的折射率與膜厚而受到影響，呈現較大影響時，結果圖案線寬產生變化亦在實驗中獲得確定。That is, it has been found that if the semi-transmissive film has a large surface reflectance to the light to be drawn, when the resist film formed on the semi-transmissive film is patterned, it is likely to occur in the resist film of the gray-scale mask blank. The standing wave due to the drawing of the light has a non-uniform exposure amount in the thickness direction of the resist film, so that the cross-sectional shape of the formed resist pattern is disordered, and the line width becomes uneven. Further, it is also known that a resist pattern having a non-uniform line width is used as a pattern of a semi-transmissive film formed by a photomask, or a line width accuracy of a pattern of a light-shielding film which is further lower is easily deteriorated. In addition, it has also been found that when the gray scale mask blank is patterned, in the interface between the resist film and its lower layer (here, for example, a semi-transmissive film), if the amount of reflected light of the depicted light is large, the vicinity of the portion is The exposure amount of the resist will become large. In fact, the effect of the effect is also affected by the refractive index and film thickness of the film, and when the effect is greatly affected, the resulting change in the line width of the pattern is also determined in the experiment.
例如，在液晶顯示裝置製造用灰階光罩中，係大部分以圖案線寬(以下簡稱為CD)變動為±0.35μm以下作為標準規格，但是該變動目前變為±0.30μm左右，尤其在薄膜電晶體之通道部等部位中，係按照其圖案的微細化，使CD變動達成±0.20μm左右乃係實質上所需求的。尤其在薄膜電晶體製造用灰階光罩中，在通道部的線寬未達3μm的情形下，係需要如上所示之嚴謹的規格。例如，在通道寬度為未達2μm之薄膜電晶體，係必須有±0.20μm程度以內的CD分布。當超出該範圍而在CD發生變動時，係在形成光罩之後，亦可藉由缺陷修正的手法來修正該圖案所產生的CD誤差，但是修正步驟係作為附加步驟而另外成為發生缺陷或成本上升的原因，因此以生產盡量不需要修正的光罩為宜。因此，備妥可減低上述CD變動的灰階光罩坯料係極為重要的。For example, in the gray scale mask for manufacturing a liquid crystal display device, most of the pattern line width (hereinafter abbreviated as CD) fluctuates to ±0.35 μm or less as a standard specification, but the variation is now about ±0.30 μm, especially in In the portion such as the channel portion of the thin film transistor, the CD variation is about 0.20 μm in accordance with the miniaturization of the pattern, which is substantially required. In particular, in the gray scale mask for manufacturing a thin film transistor, in the case where the line width of the channel portion is less than 3 μm, the strict specifications as shown above are required. For example, in a thin film transistor having a channel width of less than 2 μm, it is necessary to have a CD distribution within a range of ±0.20 μm. When the CD is changed beyond the range, the CD error generated by the pattern can be corrected by the defect correction method after the mask is formed, but the correction step is additionally added as a defect or a cost. The reason for the rise is therefore to produce a mask that does not require correction as much as possible. Therefore, it is extremely important to have a gray scale mask blank that can reduce the above-mentioned CD variation.
本發明係鑑於上述習知的情形所研創者，其第1目的係提供在製作灰階光罩時可減低上述CD變動的灰階光罩坯料。The present invention has been made in view of the above-described conventional circumstances, and a first object thereof is to provide a gray scale mask blank which can reduce the CD variation when a gray scale mask is produced.
本發明之第2目的係提供使用如上所示之灰階光罩，可精度佳地形成上述CD之灰階光罩之製造方法及灰階光罩。A second object of the present invention is to provide a method of manufacturing a gray scale mask of the above-described CD and a gray scale mask using the gray scale mask as described above.
本發明之第3目的係提供使用如上所示之灰階光罩，可在被轉印體上形成高精度之轉印圖案的圖案轉印方法。A third object of the present invention is to provide a pattern transfer method capable of forming a high-precision transfer pattern on a transfer target using the gray scale mask as described above.
為了解決上述課題，本發明係具有以下構成。In order to solve the above problems, the present invention has the following constitution.
(構成1)一種灰階光罩坯料，係用於製造依部位而選擇性地減低曝光光對被轉印體的照射量，而在被轉印體上的光阻形成包含有殘膜值不同的部分之所希望的轉印圖案的灰階光罩的灰階光罩坯料，其特徵為：該灰階光罩坯料係在透明基板上依序具有半透光膜與遮光膜，在該半透光膜與該遮光膜分別施行預定的圖案化，形成遮光部、透光部、半透光部，而形成為灰階光罩者，前述遮光膜係在膜厚方向使組成產生變化，減低對在圖案化時形成在該遮光膜上的阻劑膜進行圖案曝光時所使用的描繪光的表面反射率，前述半透光膜係以對在圖案化時形成在該半透光膜上的阻劑膜進行圖案曝光時所使用的描繪光的表面反射率在面內不會超過45%的方式作調整。(Configuration 1) A gray-scale mask blank for selectively reducing the exposure amount of exposure light to a transfer target depending on a portion, and the photoresist formation on the transfer target includes a residual film value The gray scale mask blank of the gray scale mask of the desired transfer pattern is characterized in that: the gray scale mask blank has a semi-transparent film and a light shielding film sequentially on the transparent substrate, in the half The light-transmitting film and the light-shielding film are respectively patterned by a predetermined pattern to form a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion, and are formed as a gray-scale mask, and the light-shielding film changes composition in the film thickness direction, thereby reducing a surface reflectance of a light to be used for pattern exposure of a resist film formed on the light-shielding film during patterning, the semi-transmissive film being formed on the semi-transmissive film at the time of patterning The surface reflectance of the light to be used when the resist film is subjected to pattern exposure is adjusted so as not to exceed 45% in the plane.
(構成2)如構成1之灰階光罩坯料，其中，前述半透光膜係以對在圖案化時形成在該半透光膜上的阻劑膜進行圖案曝光時所使用的描繪光的表面反射率在面內不會超過30%的方式作調整。(Configuration 2) The gray-scale mask blank of the first aspect, wherein the semi-transmissive film is used for patterning light when patterning a resist film formed on the semi-transmissive film at the time of patterning The surface reflectance is adjusted in such a way that it does not exceed 30% in the plane.
(構成3)如構成1或2之灰階光罩坯料，其中，前述半透光膜對使用在前述灰階光罩坯料施行圖案化所成之灰階光罩時所適用的曝光光的表面反射率為10%以上。(Configuration 3) A gray-scale mask blank constituting 1 or 2, wherein the semi-transmissive film is applied to a surface of an exposure light to which a gray scale mask formed by patterning the gray-scale mask blank is applied The reflectance is 10% or more.
(構成4)如構成1至3中任一者之灰階光罩坯料，其中，在前述半透光膜與前述遮光膜分別圖案化時，對於阻劑膜所使用的描繪光均為300nm至450nm之範圍內之預定波長的光。(Aspect 4) The gray scale mask blank according to any one of the above 1 to 3, wherein when the semi-transmissive film and the light-shielding film are respectively patterned, the light used for the resist film is 300 nm to Light of a predetermined wavelength in the range of 450 nm.
(構成5)如構成1至4中任一者之灰階光罩坯料，其中，前述遮光膜係藉由層積組成不同的膜所成，或在膜厚方向形成組成傾斜所成，藉此，組成在膜厚方向產生變化。(Aspect 5) The gray-scale mask blank according to any one of 1 to 4, wherein the light-shielding film is formed by a film having a different laminated composition or formed by tilting a composition in a film thickness direction. The composition changes in the direction of the film thickness.
(構成6)如構成1至5中任一者之灰階光罩坯料，其中，前述灰階光罩坯料係對包含365nm至436nm之範圍之預定區域的曝光光所使用者。(Aspect 6) The gray-scale mask blank of any one of 1 to 5, wherein the gray-scale mask blank is used for exposure light of a predetermined region including a range of 365 nm to 436 nm.
(構成7)一種灰階光罩之製造方法，係具有透光部、遮光部及透過曝光光之一部分的半透光部的灰階光罩之製造方法，係依部位選擇性地減低曝光光對被轉印體的照射量，而在被轉印體上的光阻形成包含有殘膜值不同的部分之所希望的轉印圖案的灰階光罩，其特徵為：備妥在透明基板上依序具有半透光膜與遮光膜的灰階光罩坯料，在該半透光膜與該遮光膜施行預定的圖案化，形成為灰階光罩，前述遮光膜係在膜厚方向使組成產生變化，藉此減低在圖案化時對形成在該遮光膜上的阻劑膜進行圖案曝光的描繪光的表面反射率，前述半透光膜係以在圖案化時對形成在該半透光膜上的阻劑膜進行圖案曝光時所使用的描繪光的表面反射率在面內不會超過45%的方式作調整。(Configuration 7) A method of manufacturing a gray scale mask, which is a method of manufacturing a gray scale mask having a light transmitting portion, a light blocking portion, and a semi-transmissive portion that transmits a part of exposure light, and selectively reduces exposure light depending on a portion The amount of irradiation of the object to be transferred, and the photoresist on the object to be transferred forms a gray scale mask including a desired transfer pattern having a portion having a different residual film value, which is characterized in that it is prepared on a transparent substrate. a gray-scale mask blank having a semi-transmissive film and a light-shielding film thereon, wherein the semi-transmissive film and the light-shielding film are patterned in a predetermined pattern to form a gray scale mask, and the light shielding film is formed in a film thickness direction The composition is changed to reduce the surface reflectance of the patterned light for pattern exposure of the resist film formed on the light-shielding film during patterning, and the semi-transmissive film is formed in the semi-transparent pattern during patterning. The surface reflectance of the light used for pattern exposure of the resist film on the light film is adjusted so as not to exceed 45% in the plane.
(構成8)如構成7之灰階光罩之製造方法，其中，包含：在形成於前述遮光膜上的第1阻劑膜，使用描繪光描繪第1圖案，將顯影後所形成的第1阻劑圖案作為光罩，將該遮光膜進行蝕刻而進行第1圖案化，將該第1阻劑圖案去除，在包含局部露出之半透光膜的基板上，形成第2阻劑膜，在該第2阻劑膜使用前述描繪光描繪第2圖案，將顯影後所形成的第2阻劑圖案作為光罩，將該半透光膜進行蝕刻而進行第2圖案化的步驟，前述遮光膜係減低對在描繪前述第1及第2圖案時之描繪光的表面反射率，而且前述半透光膜係以將前述第2圖案對於圖案化時之描繪光的表面反射率在面內不會超過45%的方式作調整。(Configuration 8) The method for producing a gray scale mask according to the seventh aspect, comprising: forming a first resist film formed on the light shielding film, drawing a first pattern using the drawing light, and forming the first pattern after development The resist pattern is used as a mask, and the light-shielding film is etched to perform first patterning, and the first resist pattern is removed, and a second resist film is formed on the substrate including the partially exposed semi-transmissive film. In the second resist film, the second pattern is drawn by the drawing light, the second resist pattern formed after development is used as a mask, and the semi-transmissive film is etched to perform second patterning, and the light shielding film is used. The surface reflectance of the drawing light when the first and second patterns are drawn is reduced, and the surface reflectance of the light of the semi-transmissive film when the second pattern is patterned is not in-plane. More than 45% of the way to adjust.
(構成9)一種灰階光罩之製造方法，係具有透光部、遮光部及透過曝光光之一部分的半透光部的灰階光罩之製造方法，係依部位選擇性地減低曝光光對被轉印體的照射量，而在被轉印體上的光阻形成包含有殘膜值不同的部分之所希望的轉印圖案的灰階光罩，且其特徵為：在透明基板上形成遮光膜之後施行第1圖案化，在包含經圖案化之遮光膜的基板全面形成半透光膜，在形成該半透光膜後施行第2圖案化，藉此在該半透光膜與該遮光膜分別施行預定的圖案化而形成為灰階光罩，前述遮光膜係減低在進行第1圖案化時對在形成於該遮光膜上的阻劑膜進行圖案曝光時所使用之描繪光的表面反射率，前述半透光膜係在進行第2圖案化時，以對形成於既形成在前述遮光膜之上之該半透光膜上的阻劑膜進行圖案曝光時所使用之描繪光的表面反射率在面內不會超過45%的方式作調整。(Configuration 9) A method of manufacturing a gray scale mask, which is a method of manufacturing a gray scale mask having a light transmitting portion, a light blocking portion, and a semi-transmissive portion that transmits a part of exposure light, and selectively reduces exposure light depending on a portion The amount of irradiation of the object to be transferred, and the photoresist on the object to be transferred forms a gray scale mask containing a desired transfer pattern of a portion having a different residual film value, and is characterized by: on a transparent substrate After the light-shielding film is formed, the first patterning is performed, a semi-transmissive film is formed on the substrate including the patterned light-shielding film, and after the semi-transmissive film is formed, the second patterning is performed, whereby the semi-transmissive film is The light-shielding film is formed into a gray scale mask by predetermined patterning, and the light-shielding film reduces the light used for pattern exposure of the resist film formed on the light-shielding film when the first patterning is performed. The surface reflectance of the semi-transmissive film is a pattern used for pattern exposure of a resist film formed on the semi-transmissive film formed on the light-shielding film when the second patterning is performed. The surface reflectance of light does not exceed 45% in the plane. The way to make adjustments.
(構成10)如構成7至9中任一者之灰階光罩之製造方法，其中，前述半透光膜係以對使用前述灰階光罩時所適用的曝光光的表面反射率為10%以上的方式作調整。(Claim 10) The method for producing a gray scale mask according to any one of the items 7 to 9, wherein the semi-transmissive film has a surface reflectance of 10 for exposure light to which the gray scale mask is used. More than % of the way to adjust.
(構成11)如構成7至10中任一者之之灰階光罩之製造方法，其中，前述半透光膜之對於前述描繪光的表面反射率係以在面內不會超過30%的方式作調整。(Claim 11) The method for producing a gray scale mask according to any one of the items 7 to 10, wherein the semi-transmissive film has a surface reflectance with respect to the drawn light of not more than 30% in the plane. The way to make adjustments.
(構成12)如構成7至11中任一者之灰階光罩之製造方法，其中，在前述半透光膜與前述遮光膜分別進行圖案化時，針對阻劑膜所使用的描繪光均為300nm至450nm之範圍內之預定波長的光。(Claim 12) The method for producing a gray scale mask according to any one of the items 7 to 11, wherein when the semi-transmissive film and the light-shielding film are respectively patterned, the light used for the resist film is It is light of a predetermined wavelength in the range of 300 nm to 450 nm.
(構成13)如構成7至12中任一者之灰階光罩之製造方法，其中，前述遮光膜係藉由層積組成不同的膜而成者，或在膜厚方向形成組成傾斜者。(Aspect 13) The method for producing a gray scale mask according to any one of the items 7 to 12, wherein the light-shielding film is formed by a film having a different laminated composition or a composition is formed in a film thickness direction.
(構成14)如構成7至13中任一者之灰階光罩之製造方法，其中，前述灰階光罩係針對包含365nm至436nm之範圍的預定區域的曝光光所使用者。(Attachment 14) The method of manufacturing a gray scale mask according to any one of the items 7 to 13, wherein the gray scale mask is for a user who exposes light of a predetermined region in a range of 365 nm to 436 nm.
(構成15)一種灰階光罩，其特徵為：係藉由構成7至14中任一者之灰階光罩之製造方法所製造。(Configuration 15) A gray scale mask which is manufactured by a method of manufacturing a gray scale mask of any one of 7 to 14.
(構成16)如構成15之灰階光罩，其中，相對於預定線寬的線寬偏差為±0.35μm以內。(Configuration 16) A gray scale mask of the configuration 15, wherein the line width deviation with respect to the predetermined line width is within ±0.35 μm.
(構成17)一種圖案轉印方法，其特徵為：具有使用藉由構成7至14中任一者之製造方法所得之灰階光罩，對被轉印體照射曝光光的曝光步驟，在被轉印體上形成包含有殘膜值不同之部分的預定的轉印阻劑圖案。(Structure 17) A pattern transfer method characterized by having an exposure step of irradiating exposure light to a transfer target by using a gray scale mask obtained by the manufacturing method of any one of 7 to 14 A predetermined transfer resist pattern containing a portion having a different residual film value is formed on the transfer body.
本發明之灰階光罩坯料係用於製造依部位而選擇性地減低曝光光對被轉印體的照射量，而在被轉印體上的光阻形成包含有殘膜值不同的部分之所希望的轉印圖案的灰階光罩的灰階光罩坯料，形成在透明基板上的遮光膜係組成在膜厚方向改變。藉此減低對描繪光的表面反射率。此外，半透光膜係以對描繪光的表面反射率為45%以下的方式作調整。此外，灰階光罩坯料的半透光膜係以在描繪時對描繪光之表面反射率為30%以下的方式作調整為宜。藉此，即使針對如通道部之類之需要精度的部分，亦可正確地重現形成在光罩的圖案的CD，可減低其變動。接著，獲得可達成按照光罩上之圖案的CD變動，例如圖案之微細化之需求的預定的標準規格的灰階光罩。此外，使用所得之灰階光罩，在對被轉印體進行圖案轉印時，亦不會有因曝光光反射所造成之散射光的影響，可得良好的轉印特性。The gray-scale mask blank of the present invention is used for manufacturing a portion to selectively reduce the amount of exposure of the exposure light to the object to be transferred, and the photoresist on the object to be transferred is formed to include a portion having a different residual film value. The gray scale mask blank of the gray scale mask of the desired transfer pattern, the light shielding film composition formed on the transparent substrate changes in the film thickness direction. This reduces the surface reflectance of the depicted light. Further, the semi-transmissive film is adjusted so that the surface reflectance of the light to be drawn is 45% or less. Further, the semi-transmissive film of the gray-scale mask blank is preferably adjusted so that the surface reflectance of the drawn light is 30% or less at the time of drawing. Thereby, even if it is aimed at a portion requiring precision such as a channel portion, the CD formed in the pattern of the reticle can be accurately reproduced, and the variation can be reduced. Next, a predetermined standard size gray scale mask which can achieve a CD variation according to the pattern on the photomask, for example, a miniaturization of the pattern, is obtained. Further, by using the obtained gray scale mask, when the transfer target is subjected to pattern transfer, there is no influence of scattered light due to reflection of the exposure light, and good transfer characteristics can be obtained.
此外，使用精度佳地形成有圖案的CD的上述灰階光罩來進行圖案轉印，藉此可在被轉印體上形成高精度的轉印圖案。Further, pattern transfer is performed using the above-described gray scale mask in which the patterned CD is formed with high precision, whereby a highly accurate transfer pattern can be formed on the object to be transferred.
以下根據圖示，說明用以實施本發明之最佳形態。The best mode for carrying out the invention will now be described with reference to the drawings.
第2圖係顯示本實施形態之灰階光罩之製造步驟的剖面圖。在本實施形態中，係就製造具備有遮光部、透光部、及半透光部的TFT基板製造用灰階光罩的情形加以說明。Fig. 2 is a cross-sectional view showing the manufacturing steps of the gray scale mask of the embodiment. In the present embodiment, a case will be described in which a gray scale mask for manufacturing a TFT substrate including a light shielding portion, a light transmitting portion, and a semi-light transmitting portion is manufactured.
本實施形態所使用的灰階光罩坯料係在透明基板24上依序形成有：例如含有鉬矽化物的半透光膜26、及例如以鉻Cr為主成分的遮光膜25，在其上塗佈阻劑而形成有阻劑膜27(參照第2圖(a))。以遮光膜25的材質而言，除了上述以Cr為主成分的材料之外，列舉有Si、W、Al等。在本實施形態中，遮光部的透過率係藉由層積上述遮光膜25與後述的半透光膜26而決定，藉由選定各自的膜材質與膜厚，總和而言設定為光學濃度3.0以上。The gray scale mask blank used in the present embodiment is formed with, for example, a semi-transmissive film 26 containing molybdenum telluride, and a light-shielding film 25 containing, for example, chromium Cr as a main component, on the transparent substrate 24, on which A resist film 27 is formed by applying a resist (see Fig. 2(a)). The material of the light-shielding film 25 is exemplified by Si, W, Al, and the like in addition to the above-described material containing Cr as a main component. In the present embodiment, the transmittance of the light-shielding portion is determined by laminating the light-shielding film 25 and a semi-transmissive film 26 to be described later, and the respective film materials and film thicknesses are selected, and the total density is set to an optical density of 3.0. the above.
首先進行第1次描繪。在描繪時，通常大部分係使用電子線或光(單一波長光)，但是在本實施形態中係使用雷射光(300至450nm之範圍內的預定波長光，例如413nm、355nm等)。以上述阻劑而言係使用正型光阻。對遮光膜25上的阻劑膜27描繪預定的元件圖案(在與遮光部相對應的區域形成阻劑圖案之類的圖案)，在描繪後進行顯影，藉此形成與遮光部的區域相對應的阻劑圖案27(參照第2圖(b))。First, the first drawing is performed. In the drawing, most of the electron beams or light (single-wavelength light) are used, but in the present embodiment, laser light (predetermined wavelength light in the range of 300 to 450 nm, for example, 413 nm, 355 nm, etc.) is used. In the case of the above-mentioned resist, a positive type resist is used. The resist film 27 on the light-shielding film 25 is drawn with a predetermined element pattern (a pattern such as a resist pattern is formed in a region corresponding to the light-shielding portion), and development is performed after the drawing, thereby forming a region corresponding to the light-shielding portion. The resist pattern 27 (see Fig. 2(b)).
接著，將上述阻劑圖案27作為蝕刻光罩，將遮光膜25進行蝕刻而形成與遮光部區域相對應的遮光膜圖案，使形成半透光部的半透光膜及與透光部的區域相對應的半透光膜露出。當使用以鉻為主成分的遮光膜25時，以蝕刻手段而言，可使用乾式蝕刻或濕式蝕刻之任一者，但在本實施形態中係利用乾式蝕刻。所殘留的阻劑圖案係予以去除(參照第2圖(c))。Next, the resist pattern 27 is used as an etching mask, and the light shielding film 25 is etched to form a light shielding film pattern corresponding to the light shielding portion region, and the semi-transmissive film forming the semi-light transmitting portion and the region with the light transmitting portion are formed. The corresponding semi-transmissive film is exposed. When the light-shielding film 25 containing chromium as a main component is used, either dry etching or wet etching may be used as the etching means, but in the present embodiment, dry etching is used. The remaining resist pattern is removed (see Fig. 2(c)).
接著，在基板全面形成與第1次阻劑膜相同的阻劑膜，進行第2次描繪。在第2次描繪中係以在遮光部及半透光部上形成有阻劑圖案的方式描繪預定圖案。在透光部形成區域中，係在半透光膜26上的阻劑膜照射描繪光。描繪後，藉由進行顯影，在與遮光部及半透光部相對應的區域上形成阻劑圖案28(參照第2圖(c’)、(d))。Next, the same resist film as the first resist film was formed on the entire substrate, and the second drawing was performed. In the second drawing, a predetermined pattern is drawn so that a resist pattern is formed on the light shielding portion and the semi-light transmitting portion. In the light-transmitting portion forming region, the resist film on the semi-transmissive film 26 illuminates the drawing light. After the drawing, the resist pattern 28 is formed in a region corresponding to the light shielding portion and the semi-light transmitting portion by development (see Figs. 2(c') and (d)).
接著，將上述阻劑圖案28作為蝕刻光罩而將所露出的透光部區域上的半透光膜26進行蝕刻，而形成透光部(參照第2圖(e))。接著，將所殘留的阻劑圖案去除，完成在透明基板24上具有由半透光膜26與遮光膜25的層積膜所構成的遮光部21、露出透明基板24的透光部22、及由半透光膜26所構成的半透光部23的灰階光罩(參照第2圖(f))。Next, the resist pattern 28 is used as an etching mask, and the semi-transmissive film 26 on the exposed light-transmitting portion is etched to form a light-transmitting portion (see FIG. 2(e)). Then, the remaining resist pattern is removed, and the light-shielding portion 21 including the laminated film of the semi-transmissive film 26 and the light-shielding film 25 on the transparent substrate 24, the light-transmitting portion 22 exposing the transparent substrate 24, and A gray scale mask of the semi-transmissive portion 23 composed of the semi-transmissive film 26 (see FIG. 2(f)).
如第2圖(a)所示，本發明之灰階光罩坯料係在透明基板24上依序具有半透光膜26與遮光膜25。上述灰階光罩坯料(第2圖(a))中的半透光膜26係具有對透明基板24之曝光光之透過率為10至80%左右的透過量者，以形成為20至60%的透過量為佳。以上述半透光膜26之材質而言，係列舉鉻化合物、Mo化合物、Si、W、Al等。以鉻化合物而言，係有氧化鉻(CrOx)、氮化鉻(CrNx)、氮氧化鉻(CrOxN)、氟化鉻(CrFx)、或在該等含有碳或氫者，以Mo化合物而言，除了MoSix以外，另外含有MoSi之氮化物、氧化物、氮氧化物、碳化物等。此外，所形成之光罩上的半透光部的透過率係藉由選定上述半透光膜26的膜材質與膜厚而設定。在此係在第2圖(c)中，將半透光膜26上的遮光膜25進行蝕刻，因此最好在半透光膜與遮光膜具有對蝕刻劑的蝕刻選擇性才較為有利。因此，在半透光膜的素材係以Mo化合物為佳而採用MoSix(透過率50%)。As shown in Fig. 2(a), the gray scale mask blank of the present invention has a semi-transmissive film 26 and a light shielding film 25 in this order on the transparent substrate 24. The semi-transmissive film 26 in the gray-scale mask blank (Fig. 2(a)) has a transmittance of about 10 to 80% to the exposure light of the transparent substrate 24, and is formed to be 20 to 60. % transmission is better. The material of the semi-transmissive film 26 is a series of chromium compounds, Mo compounds, Si, W, Al, and the like. In the case of a chromium compound, there are chromium oxide (CrOx), chromium nitride (CrNx), chromium oxynitride (CrOxN), chromium fluoride (CrFx), or in the case of such a carbon or hydrogen. In addition to MoSix, it also contains a nitride, an oxide, an oxynitride, a carbide, or the like of MoSi. Further, the transmittance of the semi-transmissive portion on the formed photomask is set by selecting the film material and film thickness of the semi-transmissive film 26. Here, in the second drawing (c), since the light shielding film 25 on the semi-transmissive film 26 is etched, it is preferable that the semi-transmissive film and the light-shielding film have an etching selectivity to an etchant. Therefore, in the material of the semi-transmissive film, MoSix (transmittance: 50%) is preferably used as the Mo compound.
另一方面，遮光膜25係使用以Cr為主成分的素材，具體而言，遮光膜25係具備有以在膜厚方向使組成產生變化的構成。例如以遮光膜25而言，可適用在由金屬鉻所構成的層上層積有氧化鉻(CrOx)者，或在由金屬鉻所構成的層上層積有氮氧化鉻(CrOxNy)者，或在由氮化鉻(CrNx)所構成的層上層積有金屬鉻、氧化鉻(CrOx)者等。在此，藉由層積所形成的遮光膜25可為具有明確交界的層積，或者亦包含不具有明確交界之藉由組成傾斜而成者。藉由調整該組成及膜厚，可減低對描繪光的表面反射率。遮光膜25對描繪光的表面反射率係可形成為10至15%左右。因此，在前述第1次描繪步驟(第2圖(b))中，可抑制描繪在遮光膜25上之阻劑膜時之CD變動。其中，以如上所示之遮光膜25而言，亦可適用施行有對曝光光之反射防止功能之習知的遮光膜。On the other hand, the light-shielding film 25 is made of a material containing Cr as a main component, and specifically, the light-shielding film 25 is configured to change the composition in the film thickness direction. For example, in the case of the light-shielding film 25, it is applicable to those in which chromium oxide (CrOx) is laminated on a layer made of metallic chromium, or chromium oxynitride (CrOxNy) is laminated on a layer made of metallic chromium, or A layer composed of chromium nitride (CrNx) is laminated with metal chromium or chromium oxide (CrOx). Here, the light-shielding film 25 formed by lamination may be a laminate having a clear boundary or a composition having a clear boundary without a clear boundary. By adjusting the composition and film thickness, the surface reflectance to the drawn light can be reduced. The surface reflectance of the light-shielding film 25 to the light to be drawn may be formed to be about 10 to 15%. Therefore, in the first drawing step (Fig. 2(b)), the CD variation at the time of drawing the resist film on the light shielding film 25 can be suppressed. Among them, as the light shielding film 25 as described above, a conventional light shielding film having a function of preventing reflection of exposure light can be applied.
在本發明中，上述半透光膜26的特徵為以對描繪光的表面反射率為45%以下的方式作調整。藉此，在前述之第2次描繪步驟(第2圖(D))中，可減低描繪在半透光膜26上之阻劑膜時半透光膜26對CD變動之表面反射率的影響。其中，在此所適用的描繪光係可適用300至450nm的預定波長，且最好使用適於此的光阻。In the present invention, the semi-transmissive film 26 is characterized in that the surface reflectance of the light to be drawn is adjusted to 45% or less. Thereby, in the second drawing step (Fig. 2(D)) described above, the influence of the semi-transmissive film 26 on the surface reflectance of the CD fluctuation when the resist film is drawn on the semi-transmissive film 26 can be reduced. . Among them, the drawing light system to which this applies is applicable to a predetermined wavelength of 300 to 450 nm, and it is preferable to use a photoresist suitable for this.
如以上說明所示，使用如上所示之灰階光罩坯料，按照上述第2圖的步驟來製造灰階光罩，藉此可減低光罩上之圖案的CD及半透光膜對其變動之表面反射率的影響，因此結果可將光罩圖案的CD正確地重現為所希望值，可輕易地達成按照圖案微細化的需求之預定的標準規格。此外，使用所得灰階光罩來對被轉印體進行圖案轉印時，亦可減低因曝光光反射所造成之散射光的影響。As shown in the above description, using the gray scale mask blank as shown above, the gray scale mask is manufactured in accordance with the procedure of the above FIG. 2, whereby the CD and semi-transmissive film of the pattern on the mask can be reduced. As a result of the surface reflectance, the CD of the reticle pattern can be correctly reproduced to a desired value, and a predetermined standard specification in accordance with the demand for pattern miniaturization can be easily achieved. Further, when the obtained transfer body is subjected to pattern transfer using the obtained gray scale mask, the influence of scattered light due to reflection of the exposure light can also be reduced.
使用由以上實施形態所得之精度佳地形成光罩圖案的CD，而且可減低圖案轉印時之散射光的影響的上述灰階光罩，對第1圖所示之被轉印體30進行圖案轉印，藉此可在被轉印體上形成高精度的轉印圖案(阻劑圖案33)。The transfer target 30 shown in Fig. 1 is patterned by using the above-described gray scale mask which can form a CD of a mask pattern with high precision obtained by the above embodiment and which can reduce the influence of scattered light during pattern transfer. Transferring, whereby a highly accurate transfer pattern (resist pattern 33) can be formed on the transfer target.
其中，第1圖及第2圖所示之遮光部21、透光部22、及半透光部23的圖案形狀僅為具代表性之一例，當然並非意旨將本發明限定於此。The pattern shapes of the light shielding portion 21, the light transmitting portion 22, and the semi-transmissive portion 23 shown in FIGS. 1 and 2 are merely representative examples, and it is needless to say that the present invention is not limited thereto.
第3圖係顯示本實施形態之灰階光罩之製造步驟的剖面圖。在本實施形態中亦就製作具備有遮光部、透光部、及半透光部的TFT基板製造用灰階光罩的情形作說明。Fig. 3 is a cross-sectional view showing the manufacturing steps of the gray scale mask of the embodiment. In the present embodiment, a case will be described in which a gray scale mask for manufacturing a TFT substrate including a light shielding portion, a light transmitting portion, and a semi-light transmitting portion is produced.
如第3圖(a)所示，所使用的光罩坯料係在透明基板24上形成以例如鉻Cr為主成分的遮光膜25，在其上塗佈阻劑而形成有阻劑膜27，在該狀態下，並未形成有半透光膜。以遮光膜25的材質而言，除了以上述Cr為主成分的材料以外，列舉si、W、Al等。在本實施形態中，遮光部的透過率係藉由層積上述遮光膜25與後述的半透光膜26而決定，選由選定各自的膜材質與膜厚，總和而言設定為光學濃度3.0以上。其中，在本實施形態中，如以下說明所示，在形成上述遮光膜25的圖案之後，在包含該遮光膜圖案的基板全面形成半透光膜。As shown in Fig. 3(a), the mask blank used is formed on the transparent substrate 24 by a light-shielding film 25 containing, for example, chromium Cr as a main component, and a resist is applied thereon to form a resist film 27. In this state, a semi-transmissive film was not formed. In the material of the light-shielding film 25, in addition to the material containing the above-mentioned Cr as a main component, si, W, Al, etc. are mentioned. In the present embodiment, the transmittance of the light-shielding portion is determined by laminating the light-shielding film 25 and a semi-transmissive film 26 to be described later, and the respective film materials and film thicknesses are selected, and the total optical density is set to 3.0. the above. In the present embodiment, as described below, after the pattern of the light-shielding film 25 is formed, a semi-transmissive film is formed over the entire substrate including the light-shielding film pattern.
首先進行第1次描繪。以上述阻劑而言係使用正型光阻。接著，對遮光膜25上的阻劑膜27描繪預定的元件圖案(形成與遮光部及透光部的區域相對應的阻劑圖案之類的圖案)。First, the first drawing is performed. In the case of the above-mentioned resist, a positive type resist is used. Next, a predetermined element pattern (a pattern such as a resist pattern corresponding to a region of the light shielding portion and the light transmitting portion) is drawn on the resist film 27 on the light shielding film 25.
在描繪後藉由進行顯影，形成與遮光部及透光部相對應的阻劑圖案27(參照第3圖(b))。After the drawing, development is performed to form a resist pattern 27 corresponding to the light shielding portion and the light transmitting portion (see FIG. 3(b)).
接著，以上述阻劑圖案27為蝕刻光罩，將遮光膜25進行蝕刻而形成遮光膜圖案。當使用以鉻為主成分的遮光膜25時，以蝕刻手段而言，可為乾式蝕刻或濕式蝕刻之任一者，但在本實施形態中係利用濕式蝕刻。Next, the resist pattern 27 is used as an etching mask, and the light shielding film 25 is etched to form a light shielding film pattern. When the light-shielding film 25 containing chromium as a main component is used, either of dry etching or wet etching may be used as the etching means, but in the present embodiment, wet etching is used.
在將所殘留的阻劑圖案去除之後(參照第3圖(c))，在包含透明基板24上之遮光膜圖案的全面形成半透光膜26(參照第3圖(d))。半透光膜26係具有對透明基板24之曝光光之透過量為10至80%左右的透過量，以具有20至60%之透過率者為更佳。在本實施形態中係採用藉由濺鍍成膜所得之含有氧化鉻的半透光膜(曝光光透過率40%)。After the remaining resist pattern is removed (see FIG. 3(c)), the semi-transmissive film 26 is formed on the entire surface including the light-shielding film pattern on the transparent substrate 24 (see FIG. 3(d)). The semi-transmissive film 26 has a permeation amount of about 10 to 80% of the exposure light to the transparent substrate 24, and more preferably has a transmittance of 20 to 60%. In the present embodiment, a semi-transmissive film containing chromium oxide obtained by sputtering is used (exposure light transmittance: 40%).
在此，遮光膜25係與實施態樣1相同，可適用施行有減低表面反射率之措施者。此外，上述半透光膜26係與上述相同地，以對描繪光的表面反射率為45%以下的方式作調整。Here, the light-shielding film 25 is the same as that of the first embodiment, and can be applied to a measure having a reduced surface reflectance. Further, in the same manner as described above, the semi-transmissive film 26 is adjusted so that the surface reflectance of the light to be drawn is 45% or less.
接著，在上述灰階光罩坯料的半透光膜26上形成與阻劑膜27相同的阻劑膜，在該半透光膜26上的阻劑膜進行第2次描繪。在第2次描繪中，係以在遮光部及半透光部上形成有阻劑圖案的方式描繪預定圖案。在描繪後，藉由進行顯影，在與遮光部及半透光部相對應的區域形成阻劑圖案28(參照第3圖(e))。上述半透光膜26係以對描繪光的表面反射率為45%以下的方式作調整，因此可減低半透光膜26對描繪在半透光膜26上之阻劑膜時之CD變動的表面反射率的影響。其中，在此可使用與上述第1次描繪相同的描繪光作為描繪光。Next, a resist film similar to that of the resist film 27 is formed on the semi-transmissive film 26 of the gray scale mask blank, and the resist film on the semi-transmissive film 26 is drawn for the second time. In the second drawing, a predetermined pattern is drawn so that a resist pattern is formed on the light shielding portion and the semi-light transmitting portion. After the drawing, by performing development, the resist pattern 28 is formed in a region corresponding to the light shielding portion and the semi-light transmitting portion (see FIG. 3(e)). Since the semi-transmissive film 26 is adjusted so that the surface reflectance of the light to be drawn is 45% or less, the CD variation of the semi-transmissive film 26 on the resist film drawn on the semi-transmissive film 26 can be reduced. The effect of surface reflectance. Here, the same drawing light as the above-described first drawing can be used as the drawing light.
接著，以上述阻劑圖案28為蝕刻光罩，將所露出的半透光膜26與遮光膜25的層積膜進行蝕刻而形成透光部22。以此時的蝕刻手段而言，在本實施形態中係利用濕式蝕刻。接著，將殘留的阻劑圖案去除，完成在透明基板24上具有由遮光膜25與半透光膜26的層積膜所構成的遮光部21、露出透明基板24的透光部22、及由半透光膜26所構成的半透光部23的灰階光罩(參照第3圖(f))。Next, the resist pattern 28 is used as an etching mask, and the exposed semi-transmissive film 26 and the laminated film of the light shielding film 25 are etched to form the light transmitting portion 22. In the present embodiment, wet etching is used for the etching means at this time. Then, the remaining resist pattern is removed, and the light-shielding portion 21 including the laminated film of the light-shielding film 25 and the semi-transmissive film 26 on the transparent substrate 24, the light-transmitting portion 22 exposing the transparent substrate 24, and the like are completed. A gray scale mask of the semi-transmissive portion 23 formed of the semi-transmissive film 26 (see FIG. 3(f)).
但是，在上述第1及第2實施形態中，若根據本發明人的檢討，在一般所使用的光罩中，對描繪光的表面反射率對線寬CD所造成的影響係如以下所示。However, in the above-described first and second embodiments, according to the review by the inventors of the present invention, the influence of the surface reflectance of the drawing light on the line width CD in the mask used generally is as follows. .
在第4圖顯示對表面反射率之線寬CD的變動傾向。以上述圖案化所使用之描繪光而言，係有使用波長300至450nm的雷射光，例如413nm之波長的雷射光的情形。在第4圖中係顯示使用與上述雷射光近似之436nm的波長的雷射光的情形的測定結果。第4圖係顯示將使用該雷射光時之反射率的容許範圍，以反射率與線寬的關係進行驗證的結果。Fig. 4 shows the tendency of the line width CD of the surface reflectance to change. The drawing light used for the patterning described above is a case where laser light having a wavelength of 300 to 450 nm, for example, laser light having a wavelength of 413 nm is used. In Fig. 4, the measurement results of the case of using laser light having a wavelength of 436 nm similar to the above-described laser light are shown. Fig. 4 is a graph showing the allowable range of the reflectance when the laser light is to be used, and the result of verifying the relationship between the reflectance and the line width.
具體而言，第4圖係顯示作為描繪對象的光罩坯料的表面反射率、及對其之圖案之CD的關係。在此係在Cr遮光膜上塗佈阻劑，藉由雷射描繪進行實驗，但是亦可形成為其他材料的膜。隨著反射率的增加，所形成之圖案的CD會有變粗的傾向。若由第4圖進行換算，可知以表面反射率1%的變動，線寬係變動10nm。Specifically, Fig. 4 shows the relationship between the surface reflectance of the mask blank to be drawn and the CD of the pattern. Here, a resist is applied to the Cr light-shielding film, and the experiment is performed by laser drawing, but it may be formed into a film of another material. As the reflectance increases, the CD of the formed pattern tends to become thicker. When converted from Fig. 4, it was found that the line width was varied by 10 nm in accordance with the fluctuation of the surface reflectance of 1%.
在薄膜電晶體製造用光罩中，係求取±0.35μm的CD精度。因此，對曝光光之表面反射率的變動必須為±35%以內。在具有更為嚴謹之微細圖案的TFT製造用的通道部(例如通道部的寬度未達2μm者等)中，由於求取±0.20μm的CD精度，因此反射率變動係應該形成為不會超過±20%者。In the mask for manufacturing a thin film transistor, a CD accuracy of ±0.35 μm is obtained. Therefore, the variation in the surface reflectance of the exposure light must be within ±35%. In a channel portion for manufacturing a TFT having a more precise fine pattern (for example, a channel portion having a width of less than 2 μm), since a CD accuracy of ±0.20 μm is obtained, the reflectance variation should be formed so as not to exceed ±20%.
此外，在既有之二元式光罩中，在Cr遮光膜上大部分係形成有反射防止膜，其表面反射率為10至15%左右，因此藉由上述變動而所容許的最大反射率為45%以內，若為更為微細的圖案，則為30%以內。Further, in the conventional binary reticle, most of the Cr light-shielding film is formed with an anti-reflection film having a surface reflectance of about 10 to 15%, so that the maximum reflectance allowed by the above variation is obtained. It is within 45%, and if it is a finer pattern, it is within 30%.
在具有半透光膜的灰階光罩中，與遮光膜不同，由於無法附加反射防止功能，因此有反射率上升的傾向，若按其調整描繪光的照射條件(用量)，即可在與Cr遮光膜相同的CD精度中進行描繪。但是，在灰階光罩並存有具有各種透過率的製品，關於該等，適用按照各自之反射特性的描繪條件並沒有效率而且繁雜。因此發現即使將描繪條件設為一定，若使對描繪光的表面反射率與遮光膜的表面反射率相同地形成為45%以內，若為具有更加微細圖案者，形成為30%以內，則可使所需的CD精度充足，而且在不降低良率的情形下充足市場需求。In a gray scale mask having a semi-transmissive film, unlike the light-shielding film, since the reflection preventing function cannot be added, the reflectance tends to increase, and if the irradiation condition (amount of use) of the drawing light is adjusted, it is possible to The Cr light-shielding film is depicted in the same CD precision. However, in the gray scale mask, there are products having various transmittances, and it is not efficient and complicated to apply the drawing conditions according to the respective reflection characteristics. Therefore, it is found that even if the drawing condition is constant, if the surface reflectance of the drawing light is equal to or less than 45% of the surface reflectance of the light-shielding film, if it is formed with a finer pattern, it is 30% or less. The required CD accuracy is sufficient and sufficient market demand is achieved without reducing yield.
遮光膜、及半透光膜係可藉由濺鍍法等習知的手段來形成。在本發明之灰階光罩坯料中，係將滿足上述表面反射率的膜進行成膜，且檢查另外所成膜者並加以選擇，藉此可僅使用具有充分之轉印精度的光罩坯料。半透光膜對描繪光的表面反射率係以不會超過45%的方式進行設計。其中，膜之表面反射率的下限係最好相對於曝光光為10%以上。此係基於有時會在曝光機(光罩對準器)上投入光罩時，為了檢測其存在或其位置，而使用照射在主表面之光的反射光之故。如此一來，可使用已露出半透光膜的部分，進行光罩的確認、位置確認。The light-shielding film and the semi-transmissive film system can be formed by a conventional means such as a sputtering method. In the gray-scale mask blank of the present invention, a film satisfying the above surface reflectance is formed into a film, and another film-former is inspected and selected, whereby only a mask blank having sufficient transfer precision can be used. . The semi-transmissive film is designed such that the surface reflectance of the light is not more than 45%. Among them, the lower limit of the surface reflectance of the film is preferably 10% or more with respect to the exposure light. This is based on the fact that when the reticle is placed on the exposure machine (mask aligner), the reflected light of the light irradiated on the main surface is used in order to detect the presence or position thereof. In this way, the portion where the semi-transparent film is exposed can be used for confirmation and position confirmation of the mask.
為了將表面反射率形成為上述範圍內，可藉由因半透光膜的組成所引起的折射率n、膜厚進行設計。此外，半透光部係曝光光的透過率必須為10至80%，以形成為20至60%的範圍內為佳，因此可酌量該等參數，藉由習知的膜設計方法進行設計。同樣地，可以將半透光膜對描繪光之表面反射率在面內不會超過45%的方式作調整。In order to form the surface reflectance within the above range, the refractive index n and the film thickness due to the composition of the semi-transmissive film can be designed. Further, the transmittance of the semi-transmissive portion of the exposure light must be 10 to 80%, preferably in the range of 20 to 60%, so that the parameters can be determined by a conventional film design method. Similarly, the semi-transmissive film can be adjusted in such a manner that the surface reflectance of the drawn light does not exceed 45% in the plane.
例如，在半透光膜成膜時進行上述調整時，若使用濺鍍法，可藉由調整濺鍍氣體的流量來進行。若為CrOx的半透光膜，係調整氧氣的流量，在COxNy中係僅調整氧及/或氮氣的流量，可使對描繪光之表面反射率不會超過45%。For example, when the above adjustment is performed at the time of film formation of the semi-transmissive film, the sputtering method can be used to adjust the flow rate of the sputtering gas. In the case of a semi-transmissive film of CrOx, the flow rate of oxygen is adjusted, and in COxNy, only the flow rate of oxygen and/or nitrogen is adjusted, so that the surface reflectance of the light to be drawn does not exceed 45%.
此外，本發明之半透光膜係即使在其表面反射率稍微變動(但是不會超過上述變動範圍)，亦如上所述以不會超過45%者為佳。因此，必須檢查光罩坯料。在檢查表面反射率時，係使用反射率測定器，在面內的複數個部位，測定照射相當於描繪光之光時的表面反射率，使用經確認使上述基準充足者。Further, the semi-transmissive film of the present invention preferably has a surface reflectance slightly varying (but does not exceed the above-described range of variation), and is preferably not more than 45% as described above. Therefore, the mask blank must be inspected. When the surface reflectance is inspected, the reflectance measuring device is used to measure the surface reflectance when the light corresponding to the drawing light is irradiated at a plurality of locations in the plane, and it is confirmed that the above-mentioned standard is sufficient.
第5圖係顯示上述第2實施形態所記載之使用氧化鉻之半透光部之特性的圖。在此係顯示半透光部的曝光光透過率40%、描繪光表面反射率21.4%(面內最大表面反射率未達45%)之光罩坯料的線圖(profile)。Fig. 5 is a view showing the characteristics of the semi-transmissive portion using chromium oxide described in the second embodiment. Here, a profile of the mask blank of the semi-transmissive portion was 40%, and the light surface reflectance was 21.4% (the in-plane maximum surface reflectance was less than 45%).
第5圖係顯示藉由濺鍍所得之成膜時間、藉由歐傑(Auger)電子分光法所得之剖面組成(膜厚方向的組成)的關係。由第5圖可知，濺鍍時間(歐傑分析時間)為5分鐘左右，到達藉由氧化鉻所形成的半透光部與藉由玻璃所形成的透明基板的交界，以後屬於玻璃組成之成分的氧化矽會比形成半透光部的氧化鉻多。Fig. 5 is a view showing the relationship between the film formation time by sputtering and the cross-sectional composition (composition in the film thickness direction) obtained by Auger electron spectroscopy. As can be seen from Fig. 5, the sputtering time (Oujie analysis time) is about 5 minutes, reaching the boundary between the semi-transmissive portion formed by chromium oxide and the transparent substrate formed by glass, and later belongs to the composition of the glass composition. The cerium oxide will be more oxidized than the chromium oxide forming the semi-transmissive portion.
使用由以上實施形態所得之精度佳地形成光罩圖案的CD，而且可減低圖案轉印時之散射光的影響的上述灰階光罩，對第1圖所示之被轉印體30進行圖案轉印，藉此可在被轉印體上形成高精度的轉印圖案(阻劑圖案33)。The transfer target 30 shown in Fig. 1 is patterned by using the above-described gray scale mask which can form a CD of a mask pattern with high precision obtained by the above embodiment and which can reduce the influence of scattered light during pattern transfer. Transferring, whereby a highly accurate transfer pattern (resist pattern 33) can be formed on the transfer target.
如上所述，本發明之灰階光罩係極為有效適用於薄膜電晶體(TFT)製造用光罩。尤其通道部的線寬係隨著TFT的動作高速化、小型化，有愈加變小的傾向，在如上所示之情形下，必須進行描繪圖案之正確轉印之故。因此，顯著呈現本發明的效果。As described above, the gray scale mask of the present invention is extremely effective for use in a photomask for manufacturing a thin film transistor (TFT). In particular, the line width of the channel portion tends to become smaller as the operation speed of the TFT is increased and the size is reduced. In the case as described above, it is necessary to perform accurate transfer of the drawing pattern. Therefore, the effects of the present invention are remarkably exhibited.
其中，本發明之灰階光罩並非僅為具有一種半透光部者，亦包括為具有複數個曝光光透過率的多階(multitone)光罩的情形，此外亦包含供製造如上所示之光罩所用的灰階光罩坯料。Wherein, the gray scale mask of the present invention is not only a semi-transmissive portion, but also includes a multi-tone mask having a plurality of exposure light transmittances, and is also included for manufacturing as shown above. Gray scale mask blank for the mask.
20．．．灰階光罩20. . . Gray scale mask
21．．．遮光部twenty one. . . Shading
22．．．透光部twenty two. . . Translucent part
23．．．半透光部twenty three. . . Semi-transparent part
24．．．透明基板twenty four. . . Transparent substrate
25．．．遮光膜25. . . Sunscreen
26．．．半透光膜26. . . Semi-transparent film
27．．．阻劑膜27. . . Resist film
28．．．阻劑圖案28. . . Resistive pattern
30．．．被轉印體30. . . Transferred body
31．．．基板31. . . Substrate
32A、32B．．．膜32A, 32B. . . membrane
33．．．阻劑圖案33. . . Resistive pattern
第1圖係用以說明使用灰階光罩之圖案轉印方法的剖面圖。Fig. 1 is a cross-sectional view for explaining a pattern transfer method using a gray scale mask.
第2圖係顯示本發明第1實施形態之灰階光罩之製造步驟的剖面圖。Fig. 2 is a cross-sectional view showing the steps of manufacturing the gray scale mask according to the first embodiment of the present invention.
第3圖係顯示本發明第2實施形態之灰階光罩之製造步驟的剖面圖。Fig. 3 is a cross-sectional view showing a manufacturing step of a gray scale mask according to a second embodiment of the present invention.
第4圖係顯示表面反射率與CD(線寬)之相關的曲線圖。Figure 4 is a graph showing the correlation between surface reflectance and CD (line width).
第5圖係本發明第2實施形態所示之灰階光罩之半透光膜的線圖(profile)。Fig. 5 is a view showing a semi-transmissive film of a gray scale mask shown in a second embodiment of the present invention.
20．．．灰階光罩20. . . Gray scale mask
21．．．遮光部twenty one. . . Shading
22．．．透光部twenty two. . . Translucent part
23．．．半透光部twenty three. . . Semi-transparent part
24．．．透明基板twenty four. . . Transparent substrate
25．．．遮光膜25. . . Sunscreen
26．．．半透光膜26. . . Semi-transparent film
30．．．被轉印體30. . . Transferred body
31．．．基板31. . . Substrate
32A、32B．．．膜32A, 32B. . . membrane
33．．．阻劑圖案33. . . Resistive pattern
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| JP2011215197A (en) * | 2010-03-31 | 2011-10-27 | Hoya Corp | Photomask and method for manufacturing the same |
| TWI463250B (en) * | 2012-07-18 | 2014-12-01 | Unimicron Technology Corp | Gray-tone mask, manufacturing method thereof and method of forming trench on substrate by using the same |
| CN103412463A (en) * | 2013-08-27 | 2013-11-27 | 南通富士通微电子股份有限公司 | Mask plate and manufacturing method thereof |
| CN108227368A (en) * | 2018-01-17 | 2018-06-29 | 京东方科技集团股份有限公司 | A kind of mask plate, display base plate and display device |
| CN110544671A (en) * | 2019-08-26 | 2019-12-06 | 上海新微技术研发中心有限公司 | Method for forming semiconductor structure |
| CN110783263B (en) * | 2019-08-26 | 2022-12-16 | 上海新微技术研发中心有限公司 | Method for forming semiconductor structure |
| JP2023050611A (en) * | 2021-09-30 | 2023-04-11 | 株式会社エスケーエレクトロニクス | Photomask and manufacturing method of photomask |
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| JP2007094250A (en) * | 2005-09-30 | 2007-04-12 | Hoya Corp | Method for manufacturing photomask blank and method for manufacturing photomask |
| JP2007114759A (en) * | 2005-09-21 | 2007-05-10 | Dainippon Printing Co Ltd | Photomask having gray scale and method of manufacturing the same |
| JP2007164156A (en) * | 2005-11-16 | 2007-06-28 | Hoya Corp | Mask blank and photomask |
| KR20070077098A (en) * | 2006-01-20 | 2007-07-25 | 주식회사 에스앤에스텍 | Process method of gray tone photo mask, gray tone photo mask and gray tone blank mask |
| JP2007199700A (en) * | 2005-12-26 | 2007-08-09 | Hoya Corp | Mask blank and photomask |
| JP2007219038A (en) * | 2006-02-15 | 2007-08-30 | Hoya Corp | Mask blank and photomask |
| JP2007248988A (en) * | 2006-03-17 | 2007-09-27 | Hoya Corp | Manufacturing method for gray tone mask |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080018263A (en) * | 2005-07-15 | 2008-02-27 | 아루바쿠 세이마쿠 가부시키가이샤 | Blanks for gray tone mask, gray tone mask using said blanks, and process for producing said blanks |
-
2007
- 2007-09-29 JP JP2007256926A patent/JP4934236B2/en active Active
-
2008
- 2008-09-26 KR KR1020080094417A patent/KR20090033315A/en not_active Application Discontinuation
- 2008-09-26 TW TW097137029A patent/TWI448816B/en active
- 2008-09-27 CN CN2008101868961A patent/CN101458449B/en active Active
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2010
- 2010-05-18 KR KR1020100046664A patent/KR20100061435A/en not_active Application Discontinuation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63167354A (en) * | 1986-12-29 | 1988-07-11 | Hoya Corp | Pattern forming method |
| JPS63214755A (en) * | 1987-03-03 | 1988-09-07 | Mitsubishi Electric Corp | Photomask |
| US20030177467A1 (en) * | 2001-04-13 | 2003-09-18 | Hidetoshi Ohnuma | Opc mask manufacturing method, opc mask, and chip |
| JP2003322956A (en) * | 2002-03-01 | 2003-11-14 | Hoya Corp | Method for producing halftone phase shifting mask blank |
| JP2005037933A (en) * | 2003-06-30 | 2005-02-10 | Hoya Corp | Method for manufacturing gray tone mask and gray tone mask |
| JP2005257712A (en) * | 2004-03-09 | 2005-09-22 | Hoya Corp | Gray tone mask and its manufacturing method |
| US20060128054A1 (en) * | 2004-12-14 | 2006-06-15 | Samsung Electronics Co., Ltd. | Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask |
| JP2007114759A (en) * | 2005-09-21 | 2007-05-10 | Dainippon Printing Co Ltd | Photomask having gray scale and method of manufacturing the same |
| JP2007094250A (en) * | 2005-09-30 | 2007-04-12 | Hoya Corp | Method for manufacturing photomask blank and method for manufacturing photomask |
| JP2007164156A (en) * | 2005-11-16 | 2007-06-28 | Hoya Corp | Mask blank and photomask |
| JP2007199700A (en) * | 2005-12-26 | 2007-08-09 | Hoya Corp | Mask blank and photomask |
| KR20070077098A (en) * | 2006-01-20 | 2007-07-25 | 주식회사 에스앤에스텍 | Process method of gray tone photo mask, gray tone photo mask and gray tone blank mask |
| JP2007219038A (en) * | 2006-02-15 | 2007-08-30 | Hoya Corp | Mask blank and photomask |
| JP2007248988A (en) * | 2006-03-17 | 2007-09-27 | Hoya Corp | Manufacturing method for gray tone mask |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090033315A (en) | 2009-04-02 |
| JP4934236B2 (en) | 2012-05-16 |
| JP2009086380A (en) | 2009-04-23 |
| KR20100061435A (en) | 2010-06-07 |
| CN101458449B (en) | 2013-03-13 |
| CN101458449A (en) | 2009-06-17 |
| TW200925775A (en) | 2009-06-16 |
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