JPS63167354A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPS63167354A JPS63167354A JP61310137A JP31013786A JPS63167354A JP S63167354 A JPS63167354 A JP S63167354A JP 61310137 A JP61310137 A JP 61310137A JP 31013786 A JP31013786 A JP 31013786A JP S63167354 A JPS63167354 A JP S63167354A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- substrate
- pattern
- exposed
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims description 7
- 239000006185 dispersion Substances 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 description 16
- 238000010894 electron beam technology Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、フォトマスクを製造する場合等に用いられる
パターン形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a pattern forming method used in manufacturing photomasks and the like.
従来フォトマスクを製造する場合には、例えば石英ガラ
ス等からなる透光性基板の一生表面上に、スパッタリン
グ法によシフロムからなる遮光性薄膜を被着したもの（
フォトマスクブランク）を用い、このフォトマスクブラ
ンクの遮光性薄膜上に、スピンコード法によシボジ形電
子線レジストを塗布し、レジスト付きフォトマスクブラ
ンクを製造する。次いで電子線露光装置を用い、所望の
露光用パターンデータに従って、ポジ形電子線レジスト
を露光する。露光を終えたレジスト付きフォトマスクブ
ランク（以下、露光済レジスト付ブランクという）を、
次の現像処理行程における現像処理温度と同一温度雰囲
気中に所定時間（例えば１時間）放置し、露光済レジス
ト付ブランクの温度を現像処理温度と等しくした後、現
像液を輪状にして吹き付けるスプレー現像法によシボジ
形電子線レジストを現像する。これにより、遮光性薄膜
上に所望のレジストパターンが形成される。次に、エツ
チング液を用いて遮光性薄膜を選択エツチングした後、
レジスト剥離液を用いてレジストパターンを除去すれば
、透光性基板の一生表面上に所望の遮光性薄膜パターン
が被着されたフォトマスクが得られる。Conventionally, when manufacturing a photomask, a light-shielding thin film made of shifrom is deposited on the surface of a light-transmitting substrate made of quartz glass or the like by sputtering (
Using a photomask blank), a textured electron beam resist is applied onto the light-shielding thin film of this photomask blank by a spin code method to produce a resist-coated photomask blank. Next, using an electron beam exposure device, the positive electron beam resist is exposed according to desired exposure pattern data. The resist-attached photomask blank that has been exposed (hereinafter referred to as the "exposed resist-attached blank") is
Spray development in which the exposed resist blank is left in an atmosphere at the same temperature as the development temperature in the next development process for a predetermined period of time (for example, 1 hour) to equalize the temperature of the exposed resist-equipped blank with the development process temperature, and then a developer is sprayed in a ring shape. The grained electron beam resist is developed by a method. As a result, a desired resist pattern is formed on the light-shielding thin film. Next, after selectively etching the light-shielding thin film using an etching solution,
By removing the resist pattern using a resist stripping solution, a photomask having a desired light-shielding thin film pattern deposited on the entire surface of the light-transmitting substrate can be obtained.
上述した従来のパターン形成方法では、露光源レジスト
付ブランクの温度を現像処理温度と等しくする際、単純
にその温度の雰囲気中に放置する方法をとっていること
から、次のような問題を有する。第１に、露光源レジス
ト付ブランクを放置する方法は、当該露光済しジスト付
プラ／りの周囲の空気が対流を生ずる中でその温度を現
像処理温度に咎しくしようとするものであるため、露光
源レジスト付ブランクの中央部近傍の領域と周縁部近傍
の領域とで、温度差が生じてしまう。第２に、露光源レ
ジスト付ブランクを放置する雰囲気の温度制御・管理が
困難で、露光源レジスト付ブランクを放置する場所や方
法等の差異に起因し、各露光源レジスト付ブランクの温
度を常に所定の現像温度に一致させることは著しく困難
である。In the conventional pattern forming method described above, when the temperature of the exposure source resist-equipped blank is made equal to the development processing temperature, it is simply left in an atmosphere at that temperature, which has the following problems. . First, the method of leaving the exposure source resist-attached blank is to raise the temperature of the exposed resist-attached plastic to the developing processing temperature while the air around it generates convection. , a temperature difference occurs between a region near the center and a region near the periphery of the blank with exposure source resist. Second, it is difficult to control and manage the temperature of the atmosphere in which the blanks with exposure source resists are left, and due to differences in the locations and methods in which the blanks with exposure source resists are left, the temperature of each blank with exposure source resists is constantly maintained. It is extremely difficult to match the predetermined development temperature.
この結果、現像令エツチング・レジスト剥離の各工程を
経て製造されるフォトマスクにおいては、温度のばらつ
きに応じ、同一フォトマスク内で、中央部近傍領域と周
縁部近傍領域とで本来同一であるべきパターン線幅が異
なる現象（いわゆる面内ばらつき）や、各フォトマスク
の同一部位に形成される、本来同一であるべきパターン
の線幅がばらつく現象（いわゆる面間ばらつき）が生ず
る。As a result, in a photomask manufactured through each process of development, etching, and resist stripping, the area near the center and the area near the periphery within the same photomask should be essentially the same, depending on temperature variations. A phenomenon in which pattern line widths differ (so-called in-plane variations) and a phenomenon in which line widths of patterns that are originally the same and are formed at the same portion of each photomask vary (so-called inter-plane variations) occur.
本発明は、レジストの現像を行なう前に、露光源レジス
ト付基板を、一定温度に均一化された保温プレートの表
面上に所定時間載置するようにしたものである。In the present invention, before developing the resist, a substrate with an exposure source resist is placed on the surface of a heat-retaining plate whose temperature is uniformized for a predetermined period of time.
保温プレート上に載置されることによシ、露光源レジス
ト付基板は、すべて強制的に、一定の、しかも均一化さ
れた温度を有するに至る。By being placed on the heat insulating plate, all of the exposed resist-coated substrates are forced to have a constant and uniform temperature.
まず、石英ガラス板の両生表面を高精度に研磨し、寸法
５Ｘ５Ｘ０．０９（厚み）インチの透光性基板を得る。First, the ambidextrous surface of a quartz glass plate is polished with high precision to obtain a translucent substrate having dimensions of 5 x 5 x 0.09 inches (thickness).
次に、この透光性基板の一主表面上に、スパッタリング
法によシフロムからなる遮光性薄膜（膜厚７００Ｋ ）
を被着し、フォトマスクブランクを製造する。Next, on one main surface of this light-transmitting substrate, a light-shielding thin film (film thickness 700K) made of shifrom is applied by sputtering.
to produce a photomask blank.
次に、このフォトマスクブランクの遮光性薄膜側の主表
面上に、スピンコード法によってポジ形電子線レジスト
（チッソ社製のＰＨ１、膜厚４０００Ｘ）を塗布し、レ
ジスト付フォトマスクブランクを製造する。Next, on the main surface of this photomask blank on the light-shielding thin film side, a positive electron beam resist (PH1 manufactured by Chisso Corporation, film thickness 4000X) is applied by a spin code method to produce a photomask blank with resist. .
次いで、電子線露光装置（パーキン・エルマー社製のＭ
ＥＢＥＳ−ｍ）を用い、所定の露光用パターンデータに
従って、ポジ形電子線レジストを電子。Next, an electron beam exposure device (Perkin-Elmer M
EBES-m) is used to apply a positive electron beam resist according to predetermined exposure pattern data.
線によりａ光し、露光源レジスト付ブランクとする。A-ray is applied to the blank to form a blank with an exposure source resist.
一方、温度制御機構を備え、一定の保温温度を設定する
と表面温度を均一にその温度に保つ機能をもった保温プ
レートを用意する。本実施例では、５〜３０℃の範Ｊで
温度が設定できるアルミニウム製の保温プレートを用い
た。On the other hand, a heat-retaining plate is prepared which is equipped with a temperature control mechanism and has the function of maintaining a uniform surface temperature at a certain heat-retaining temperature when set. In this example, an aluminum heat insulating plate whose temperature can be set in the range J of 5 to 30°C was used.
この保温プレートの温度を、後の現像処理工程における
現像処理温度である１３℃に設定し、その上に露光源レ
ジスト付ブランクを載置した。このとき、石英ガラス面
側を保温プレートの表面に当接させるようにする。この
状態で１分間放置し、露光源レジスト付ブランクの温度
を全体に現像処理温度に均一化する。The temperature of this heat insulating plate was set at 13° C., which is the development temperature in the subsequent development step, and the blank with exposure source resist was placed thereon. At this time, the quartz glass surface side is brought into contact with the surface of the heat insulating plate. This state is left for 1 minute to uniformize the temperature of the entire exposed resist-attached blank to the development processing temperature.
その後、現像液（ＰＢ８専用デベロッパ）を用い、スプ
レー現像法によって、露光源レジスト付ブランクのポジ
形電子線レジストを現像し、レジストパターンを形成し
た。Thereafter, the blank positive electron beam resist with the exposure source resist was developed by a spray development method using a developer (PB8 exclusive developer) to form a resist pattern.
引続き、エツチング液（硝酸第２セリウムアンモニウム
１６５ｇと過塩素酸（７０％）４２ｄとに純水を加えて
１０００−にした溶液）によシ、遮光性薄膜を選択的に
エツチングした。Subsequently, the light-shielding thin film was selectively etched using an etching solution (a solution made by adding pure water to 165 g of ceric ammonium nitrate and 42 d of perchloric acid (70%) to make a solution of 1000 -).
次いで、レジスト剥離膜（熱濃硫酸）を用いて残僧する
レジストパターンを剥離することによシ、透光性基板（
石英ガラス板）の−主表面上に遮光性薄膜パターンを形
成したフォトマスクが製造できた。Next, by peeling off the remaining resist pattern using a resist peeling film (hot concentrated sulfuric acid), the transparent substrate (
A photomask in which a light-shielding thin film pattern was formed on the main surface of a quartz glass plate was manufactured.
このようにして製造したフォトマスクと、比較例として
、露光源レジスト付ブランクを保温プレート上には載置
せず、単に現像温度（１３℃）雰囲気中に１時間放置し
た後、同様に現像・エツチング・レジスト剥離の工程を
経て製造したフォトマスクとを、それぞれ４枚無作為に
抽出し、その−上表面上、中央部の４×４インチの領域
内について、本来同一の所望線幅５．０μｍを有すべき
遮光性薄膜パターンの線幅を実測した。その結果を下表
に示す。なお、下表における各数値は、上記領域内にお
ける線幅の面内ばらつきを３σ（σは標準偏差）で示し
たものおよび上記領域内における最大線幅から最小線幅
を引いたものを示している。As a comparative example, the photomask manufactured in this manner and a blank with exposure source resist were not placed on a heat insulating plate, but were simply left in an atmosphere at a developing temperature (13°C) for 1 hour, and then developed and exposed in the same manner. Four photomasks manufactured through the etching and resist peeling processes were randomly selected, and the desired line width of 5.5 mm was originally the same within the 4 x 4 inch area at the center on the upper surface. The line width of the light-shielding thin film pattern, which should have a width of 0 μm, was actually measured. The results are shown in the table below. In addition, each numerical value in the table below shows the in-plane variation of line width within the above region expressed in 3σ (σ is the standard deviation) and the value obtained by subtracting the minimum line width from the maximum line width within the above region. There is.
これらの各位をもとに各実施例における３σの値の平均
値を算出すると０．０６０５μｍであシ、またその３σ
の値についてのばらつき（標準偏差）σｌは、０．００
３μｍであった。これに対し、各比較例について３σの
値の平均値は０．０８６８μｍであシ、そのばらつきσ
２は０．０２１μｍであった。このように、本発明の実
施例における面内ばらつきのばらつきは、比較例の場合
の７分の１に改善されている。Based on these points, the average value of 3σ values in each example is calculated to be 0.0605 μm, and that 3σ value is 0.0605 μm.
The dispersion (standard deviation) σl for the value of is 0.00
It was 3 μm. On the other hand, the average value of 3σ values for each comparative example is 0.0868 μm, and the variation σ
2 was 0.021 μm. In this way, the in-plane variation in the example of the present invention is improved to one-seventh of that in the comparative example.
また、最大線幅から最小線幅を引いた値に関しては、実
施例の場合にはその値が０．０８２〜０．１２７μｍの
範囲内に収ｔｂその値が小さく安定しているのに対し、
比較例の場合にはその値が０．１２０〜０．１９３μｍ
の範囲内となシその値が大きい。Furthermore, regarding the value obtained by subtracting the minimum line width from the maximum line width, in the case of the example, the value is within the range of 0.082 to 0.127 μm, and the value is small and stable.
In the case of comparative examples, the value is 0.120 to 0.193 μm
If the value is within the range of , then the value is large.
さらに、各実施例および比較例相互間における面間ばら
つきを求めると、実施例においてσＡ＝０．０１μｍで
あるのに対し、比較例ではσＢ ＝ ０．０６μｍであ
った。Furthermore, when determining the surface-to-plane variation between each Example and Comparative Example, it was found that σA = 0.01 μm in the Example, whereas σB = 0.06 μm in the Comparative Example.
このように本実施例によれば面内および面間でのパター
ン線幅のばらつきを抑え、所望線幅をもつた遮光性薄膜
パターンを確実に、かつ安定して形成できる。また、露
光法レジスト付ブランクの放置時間が従来の自然放置す
る場合には１時間は必要であったのに対し、本実施例で
は１分間で済み、製造時間を著しく短縮できる。As described above, according to this embodiment, variation in pattern line width within a plane and between planes can be suppressed, and a light-shielding thin film pattern having a desired line width can be reliably and stably formed. In addition, while the exposure method resist-coated blank required one hour to stand in the conventional case of natural leaving, in this example it only took one minute, which significantly shortened the manufacturing time.
上述した実施例では、石英ガラス板の一生表面上にクロ
ムからなる遮光性薄膜を被着した基板を用い、遮光性薄
膜に所望のパターンを形成する場合について説明したが
、本発明はこれに限定されるものではない。例えば、石
英ガラス板の代シにソーダライムガラス、アルミノボロ
シリケートガラス、サファイア等からなる透光性基板、
あるいはセラミックスやシリコン等を用いてもよい。同
様にクロムの代シにメンタル、タングステン、ケイ化モ
リブデン等からなる遮光性薄膜、あるいは酸化シリコン
等からなる薄膜を用いてもよい。もちろん、これらの薄
膜の成膜方法も特に限定されるものではなく、スパッタ
リング法以外にも、例えばＣＶＤ法、イオンブレーティ
ング法、真空蒸着法等を採用してもよい。いずれにして
も、その表面にレジストパターンを形成し、これをマス
クとしてエツチングが行なえるものであればよい。その
寸法も、上述した実施例のものに限定されるものではな
く任意であるが、基板の寸法が大きくなるほど、面内お
よび面間のパターン線幅ばらつきの抑制効果は大きくな
る。In the above-mentioned embodiment, a case was explained in which a desired pattern is formed on the light-shielding thin film using a substrate having a light-shielding thin film made of chromium deposited on the surface of a quartz glass plate, but the present invention is not limited to this. It is not something that will be done. For example, instead of a quartz glass plate, a transparent substrate made of soda lime glass, aluminoborosilicate glass, sapphire, etc.
Alternatively, ceramics, silicon, etc. may be used. Similarly, instead of chromium, a light-shielding thin film made of metal, tungsten, molybdenum silicide, etc., or a thin film made of silicon oxide, etc. may be used. Of course, the method for forming these thin films is not particularly limited, and in addition to the sputtering method, for example, a CVD method, an ion blating method, a vacuum evaporation method, etc. may be employed. In any case, it is sufficient if a resist pattern can be formed on the surface and etching can be performed using this as a mask. The dimensions are not limited to those of the embodiments described above and are arbitrary, but the larger the dimensions of the substrate, the greater the effect of suppressing pattern line width variations within and between surfaces.
レジストは、ポジ形に限らずネガ形でもよく、電子線レ
ジストに限らずフォトレジストとし、紫外光ないし遠紫
外光吟で露光してもよい。The resist is not limited to a positive type, but may be a negative type, and is not limited to an electron beam resist, but may be a photoresist, and may be exposed to ultraviolet light or deep ultraviolet light.
また、現像処理温度および露光済レジスト付基板を温度
制御された保温プレート上に載置する時間は、必要に応
じ適宜選択し得ることはいうまでもない。Further, it goes without saying that the development processing temperature and the time for placing the exposed resist-coated substrate on the temperature-controlled heat insulating plate can be appropriately selected as necessary.
現像方法も、スプレー現像法に限らず、浸漬式等の現像
方法でもよい。レジスト剥離方法も任意である。The developing method is not limited to the spray developing method, but may also be a dipping method or the like. The resist stripping method is also arbitrary.
本発明によれば、レジストの現像前に、露光済レジスト
付基板を保温グレート上に載置し、その温度を強制的に
一定温度に均一化するものとじたことによシ、面内およ
び面間ばらつきの発生を抑制し、所望線幅のパターンを
確実に安定して形成できる。According to the present invention, before developing the resist, the exposed resist-coated substrate is placed on a heat insulating grate and the temperature is forcibly uniformized to a constant temperature. It is possible to suppress the occurrence of variations between patterns and to form a pattern with a desired line width reliably and stably.
Claims (1)
ストを選択的に露光する工程と、この露光済レジスト付
基板を、一定温度に均一化された保温プレートの表面上
に所定時間載置する工程と、レジストを現象しレジスト
パターンを形成する工程と、このレジストパターンをマ
スクとし、基板の主表面を選択的にエッチングして基板
主表面に所望のパターンを形成する工程と、レジストパ
ターンを剥離する工程とを含むことを特徴とするパター
ン形成方法。A step of applying a resist onto the main surface of the substrate, a step of selectively exposing the resist to light, and a step of placing the exposed resist-coated substrate on the surface of a heat insulating plate that is kept at a uniform temperature for a predetermined period of time. a step of developing the resist to form a resist pattern; a step of selectively etching the main surface of the substrate using the resist pattern as a mask to form a desired pattern on the main surface of the substrate; and peeling off the resist pattern. A pattern forming method comprising the steps of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61310137A JPS63167354A (en) | 1986-12-29 | 1986-12-29 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61310137A JPS63167354A (en) | 1986-12-29 | 1986-12-29 | Pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63167354A true JPS63167354A (en) | 1988-07-11 |
Family
ID=18001609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61310137A Pending JPS63167354A (en) | 1986-12-29 | 1986-12-29 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63167354A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI448816B (en) * | 2007-09-29 | 2014-08-11 | Hoya Corp | Gray tone mask blank, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern |
-
1986
- 1986-12-29 JP JP61310137A patent/JPS63167354A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI448816B (en) * | 2007-09-29 | 2014-08-11 | Hoya Corp | Gray tone mask blank, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern |
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