CN101458449A - Graytone mask blank, method of manufacturing graytone mask and graytone mask, and pattern transfer method - Google Patents
Graytone mask blank, method of manufacturing graytone mask and graytone mask, and pattern transfer method Download PDFInfo
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- CN101458449A CN101458449A CNA2008101868961A CN200810186896A CN101458449A CN 101458449 A CN101458449 A CN 101458449A CN A2008101868961 A CNA2008101868961 A CN A2008101868961A CN 200810186896 A CN200810186896 A CN 200810186896A CN 101458449 A CN101458449 A CN 101458449A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
Abstract
The invention provides a gray-scale mask ingot capable of selectively reducing exposure of the transformed body according to the position and being used for manufacturing the gray-scale mask of desired transformed pattern containing portions with different residual-film rate on the photoresist of the transformed body. A semi-transparent film and a shading film are arranged on a transparent substrate in turn and the prescribed patterning is respectively performed on the semi-transparent film and the shading film, therefore a shading portion, a transparent portion and a semi-transparent portion are formed as the gray-scale mask. The component change of the shading film on the film-thickness direction reduces the surface reflection rate to the drafting light used in patterning and the surface reflection rate of the semi-transparent film to the drafting light used in patterning is adjusted to not exceed 45% on the surface.
Description
Technical field
The present invention relates to adopt mask on by the photoresist on the transcription body, to form the pattern transfer method that is provided with different resist film thicknesses transcription pattern partly, gray-tone mask that in this pattern transfer method, uses and manufacture method thereof and the graytone mask blank (blank) that in the manufacturing of this gray-tone mask, uses.
Background technology
At present, in the field of liquid crystal indicator (Liquid Crystal Display: below be called LCD), thin-film transistor LCD device (Thin Film Transistor Liquid CrystalDisplay: the following TFT of being called-LCD) compare with CRT (cathode-ray tube (CRT)), owing to advantage such as manufacture and consumed power is low easily slim, so be applied in the modern goods by by leaps and bounds.TFT-LCD has the TFT substrate of the structure that disposes TFT in each pixel of rectangular arrangement and arranges the brief configuration that overlaps under the intervention of color filter in liquid crystal phase of redness, green and blue pixel pattern accordingly with each pixel.The manufacturing step of TFT-LCD is various, only makes the TFT substrate and will use 5～6 photomasks.In this case, proposed to have the photomask (being called gray-tone mask) of light shielding part, transmittance section and semi light transmitting part, reduced the method (for example the spy opens communique 2005-No. 37933) of the mask quantity of in the TFT substrate is made, using by employing.
At this, so-called gray-tone mask is meant to have the transmittance section of exposing transparency carrier, on transparency carrier, be formed with the light shielding part of photomask that blocks exposure light, on transparency carrier, form photomask or semi-transparent film and as 100% o'clock this transmittance of light amount ratio that sees through is reduced the light transmission rate of transparency carrier and see through the mask of the semi light transmitting part (below be called GTG portion) of the light of ormal weight.In addition, so-called semi light transmitting part be using mask with pattern transfer on by the transcription body time, make the transit dose of the exposure light that sees through reduce ormal weight and be controlled at by the part of the film residual quantity after the photoresist film video picture on the transcription body.As such gray-tone mask, as semi light transmitting part, on transparency carrier, have the light transmission rate of regulation, form semi-transparent film, perhaps, on photomask on the transparency carrier or the semi-transparent film, under the condition of exposure, form the fine pattern separate below the picture limit.
Fig. 1 is the sectional view that is used to illustrate the pattern transfer method that has adopted gray-tone mask.Gray-tone mask 20 shown in Figure 1 is used for forming the different stage by stage corrosion-resisting pattern 33 of thickness on by transcription body 30.Use gray-tone mask 20 shown in Figure 1 forms the state of the different corrosion-resisting pattern 33 of thickness on by transcription body 30.In addition, in Fig. 1, symbol 32A, 32B are illustrated in by film stacked on the substrate in the transcription body 30 31.
Gray-tone mask 20 shown in Figure 1 has the light shielding part 21 that blocks exposure light (transmitance is approximately 0%) when using this gray-tone mask 20, make the transmittance section 22 of the exposure light transmission on the surface of exposing transparency carrier 24, and with the exposure light transmission rate of transmittance section as making transmittance be reduced to semi light transmitting part 23 about 10～80% at 100% o'clock.Semi light transmitting part 23 shown in Figure 1 is made of the semi-transparent film of the light semi-transparence that forms on transparency carrier 24, but also can constitute by forming under the conditions of exposure when using mask to surpass to separate as the fine pattern of limit.
When using aforesaid gray-tone mask 20, do not make the exposure light transmission in fact by light shielding part 21, by semi light transmitting part 23 exposure light is reduced.Thus, when the etchant resist (positive type photoresist film) of coating is after transcription, through video picture on by transcription body 30, on the part corresponding, has thick thickness with light shielding part 21, on the part corresponding, has thin thickness with semi light transmitting part 23, on the part corresponding, do not have film (promptly not producing residual film in fact), thereby form corrosion-resisting pattern 33 with transmittance section 22.That is, corrosion-resisting pattern 33 has the thickness of different (promptly having difference of height) stage by stage.
And, in the part that does not have film of corrosion-resisting pattern 33 shown in Figure 1, on by for example film 32A of transcription body 30 and 32B, implement first etching, and the thin part of thickness by removal corrosion-resisting patterns 33 such as polishings (ashing), in this part, on by for example film 32B of transcription body 30, implement second etching.Like this, on by transcription body 30, form the different stage by stage corrosion-resisting pattern 33 of thickness, implement existing two photomask steps, reduced the quantity of mask by adopting a gray-tone mask 20.
Such photomask is in display device, particularly in the manufacturing of the thin film transistor (TFT) of liquid crystal indicator, by very effective application.For example, can form source electrode, drain portion, form groove by semi light transmitting part 23 by light shielding part 21.
But, general, when adopting photomask exposure by the transcription body, the harmful effect that needs consideration to cause by the exposure reflection of light.For example, reflected by the transcription surface after having exposure light transmission mask, and by mask surface (pattern forms the surface) or inside surface reflection and shine once more by the situation on the transcription body.In addition, any one position reflection of exposure light in exposure sources, and shine by the transcription body by the photomask surface reflection first-class, thereby also have the situation that produces scattered light.Under these circumstances, produce writing of not expecting on by the transcription body, and overslaugh correct pattern transfer.Therefore, the general measure of implementing to tackle the scattered light when exposing in the optical system of exposure sources.Further, in exposure sources, if for example to the exposure light the mask surface reflectivity 10 ± 5%, then can not be subjected to the influence of scattered light, be set at the benchmark when carrying out transcription.In addition, in binary mask etc., in not having the photomask of semi-transparent film, prevent measure, also need to use the mask of the above-mentioned reflectivity of full up foot at the benchmark below 15% by being implemented in reflections such as antireflection film is set on the photomask as the superiors.
On the other hand, as mentioned above, have thickness by stages or the purpose of the corrosion-resisting pattern of different continuously parts by forming on by the transcription body, known conduct optionally reduces the transmitance of exposure light of privileged site on the pattern and the photomask that sees through that can control exposure light is a gray-tone mask.In such gray-tone mask, knownly on the semi light transmitting part that sees through part exposure light, adopt semi-transparent film.Adopt on this semi light transmitting part in the gray-tone mask of semi-transparent film, by the patterning that forms on mask, this semi-transparent film replaces photomask, has the part of the superiors of exposing mask, as shown in Figure 1.This semi-transparent film can not the such antireflection film of the above-mentioned binary mask of direct stacked use according to the necessity that sees through exposure light in the transmitance scope of expectation.In addition, in adopting the gray-tone mask of semi-transparent film, semi light transmitting part to the surface reflectivity of exposure light because its composition and thickness can not avoid surpassing 10% situation.
Again on the one hand, adopt such gray-tone mask, on by the transcription body, carry out under the situation of pattern transfer, as by the resist on the transcription body, compare with the photomask of general binary mask that does not have semi light transmitting part etc., also can adopt dependence little or video picture characteristic to the dependence of the exposure light amount low resist of light sensitivity exposure light amount.Like this, by adopting the low resist of exposure light amount dependence, can be easily the residual-film amount of resist be controlled in the scope of expectation.And, think for the low resist of exposure light amount dependence, because that it changes photo sensitivity of light quantity is little, so the influence that the pattern that the scattered light during by exposure causes writes is smaller.But the inventor finds need be with the reflection characteristic of the such gray-tone mask of the viewpoint check different with above-mentioned binary mask.
Specifically, though the influence of the scattered light that is caused by the exposure light reflectivity of semi-transparent film is little as mentioned above,, determine that the surface reflectivity for the drafting light that adopts is important in patterning in the stage of making gray-tone mask.This be because in the etchant resist that on semi-transparent film, forms when drawing light and draw a design, when the lip-deep surface reflectivity of semi-transparent film is too high, the size that can not correctly draw a design.
That is to say, discovery is to the surface reflectivity of the semi-transparent film of drawing light when big, during at the Patten drawing of the etchant resist that on semi-transparent film, forms, in the etchant resist of graytone mask blank, be easy to generate by drawing the standing wave that light causes, and because exposure is inhomogeneous on the thickness direction of etchant resist, so the cross sectional shape of the corrosion-resisting pattern that forms disorderly, live width can be inhomogeneous.Further, determine to have the pattern of the semi-transparent film that the corrosion-resisting pattern of inhomogeneous live width forms as mask or further the live width precision of the pattern of the photomask under it worsen easily.In addition, when graytone mask blank draws a design, when the drafting reflection of light light quantity on the interface of etchant resist and lower floor's (at this for example semi-transparent film) thereof is big, find that near the exposure quantitative change of the resist that this position is is big.In fact, the manifestation mode of this effect is determined by experiment, also is subjected to the refractive index of film and the influence of thickness, and under the big situation of influence performance, the result causes pattern line-width to change.
For example, in the gray-tone mask of liquid crystal indicator manufacturing usefulness, though how with pattern line-width (below abbreviate CD as) change below ± 0.35 μ m as standard specification, but this change becomes now ± 0.30 μ m about, particularly, on the positions such as groove of thin film transistor (TFT), with the miniaturization of its pattern correspondingly, try to achieve in fact the CD change reach ± 0.20 μ m about.Particularly, in the gray-tone mask that the film crystal pipe manufacturer is used, under the situation of live width less than 3 μ m of groove, try to achieve the specification of such strictness.For example, in the thin film transistor (TFT) of channel width, need to distribute with interior CD about ± 0.20 μ m less than 2 μ m.Produce surpassing such scope under the situation of CD change, also can be by after the formation mask, the CD error that in this pattern, produces by the correction of defect correction method, but revise the rising that step can cause producing further defective and cost as additional step, so expect that very production does not need the mask of revising.Therefore, the preparation graytone mask blank that can reduce above-mentioned CD change is absolutely necessary.
Summary of the invention
In view of above-mentioned existing problem, first purpose of the present invention provides a kind of graytone mask blank that can reduce above-mentioned CD change when gray-tone mask is made.
Second purpose of the present invention provides and a kind ofly adopts such graytone mask blank and can precision form the manufacture method and the gray-tone mask of the gray-tone mask of above-mentioned CD well.
The 3rd purpose of the present invention provides a kind of pattern transfer method that adopts such gray-tone mask can form high-precision transcription pattern on by the transcription body.
The technical scheme of dealing with problems
In order to solve the problems of the technologies described above, the present invention has following structure.
(structure 1) a kind of graytone mask blank, be used for optionally reducing manufacturing to the gray-tone mask of the transcription pattern that forms the expectation that comprises the different part of residual film value by the exposure of the exposure light of transcription body, on by the photoresist on the transcription body according to the position, this graytone mask blank has semi-transparent film and photomask successively on transparency carrier, on this semi-transparent film and this photomask, implement the patterning of regulation respectively, thereby form light shielding part, transmittance section and semi light transmitting part, form gray-tone mask; The composition of described photomask on film thickness direction changes, and the surface reflectivity of the drafting light that adopts when during patterning the etchant resist that forms being carried out pattern exposure on this photomask is lowered; The surface reflectivity of the drafting light that described semi-transparent film adopts when when patterning the etchant resist that forms being carried out pattern exposure on this semi-transparent film is adjusted into and is no more than 45% in face.
(structure 2) according to structure 1 described graytone mask blank, and the surface reflectivity of the drafting light that described semi-transparent film adopts when when patterning the etchant resist that forms being carried out pattern exposure on this semi-transparent film is adjusted into and is no more than 30% in face.
(structure 3) according to structure 1 or 2 described graytone mask blanks, the surface reflectivity of the exposure light that is adopted when use forms gray-tone mask to described graytone mask blank enforcement patterning of described semi-transparent film is more than 10%.
(structure 4) is according to any one described graytone mask blank in the structure 1 to 3, when each of described semi-transparent film and described photomask carried out patterning, any one in the drafting light that etchant resist is adopted all was the light of the provision wavelengths in 300nm～450nm scope.
According to any one described graytone mask blank in the structure 1 to 4, described photomask changes thereby form on film thickness direction by forming different film-stack or having to tilt to form by the composition on film thickness direction (structure 5).
(structure 6) according to any one described graytone mask blank in the structure 1 to 5, and described graytone mask blank is used to comprise the exposure light in the regulation zone of 365nm～436nm scope.
The manufacture method of (structure 7) a kind of gray-tone mask, this gray-tone mask optionally reduces form the expectation transcription pattern that comprises the different part of residual film value by the exposure of the exposure light of transcription body, on by the photoresist on the transcription body according to the position, have transmittance section, light shielding part and see through the semi light transmitting part of part exposure light, preparation has the graytone mask blank of semi-transparent film and photomask successively on transparency carrier, on this semi-transparent film and this photomask, implement the patterning of regulation respectively, thereby form gray-tone mask; Described photomask is by changing the composition on film thickness direction, and the surface reflectivity that during patterning the etchant resist that forms is carried out the drafting light of pattern exposure on this photomask is lowered; The surface reflectivity of the drafting light that adopts during to pattern exposure in the etchant resist that described semi-transparent film forms on this semi-transparent film when patterning is adjusted into and is no more than 45% in face.
(structure 8) is according to the manufacture method of structure 7 described gray-tone masks, comprise following steps: on first etchant resist that forms on the described photomask, adopt drafting light to draw first pattern, with first corrosion-resisting pattern that forms after the video picture as mask, this photomask of etching, thereby carry out first patterning, remove this first corrosion-resisting pattern, on the substrate that comprises the semi-transparent film that partly exposes, form second etchant resist, on this second etchant resist, adopt described drafting light to draw second pattern, with second corrosion-resisting pattern that forms after the video picture as mask, this semi-transparent film of etching, thus carry out second patterning; Described photomask is lowered the surface reflectivity of the drafting light when drawing described first and second patterns, and described semi-transparent film is adjusted into the surface reflectivity of the drafting light when described second pattern of patterning and is no more than 45% in face.
The manufacture method of (structure 9) a kind of gray-tone mask, this gray-tone mask optionally reduces by the exposure of the exposure light of transcription body according to the position, on by the photoresist on the transcription body, form the expectation transcription pattern that comprises the different part of residual film value, has the transmittance section, light shielding part and see through the semi light transmitting part of part exposure light, by first patterning after implementing to form photomask on the transparency carrier, form semi-transparent film on whole of the substrate of the photomask after comprising patterning, after this semi-transparent film forms, implement second patterning, on this semi-transparent film and this photomask, implement the patterning of stipulating respectively and form gray-tone mask; The surface reflectivity of the drafting light that described photomask adopts when when first patterning etchant resist that forms being carried out pattern exposure on this photomask is lowered; The surface reflectivity of the drafting light that described semi-transparent film adopts when when second patterning etchant resist that forms on this semi-transparent film that forms being carried out pattern exposure on described photomask is adjusted into and is no more than 45% in face.
(structure 10) according to the manufacture method of any one described gray-tone mask in the structure 7 to 9, and described semi-transparent film is adjusted into more than 10% the surface reflectivity of the exposure light that adopts when using described gray-tone mask.
(structure 11) according to the manufacture method of any one described gray-tone mask in the structure 7 to 10, and described semi-transparent film is adjusted into the surface reflectivity of described drafting light and is no more than 30% in face.
(structure 12) is according to the manufacture method of any one described gray-tone mask in the structure 7 to 11, to the difference patterning of described semi-transparent film and described photomask the time, any one in the drafting light that etchant resist is adopted all is the light of the provision wavelengths in 300nm～450nm scope.
(structure 13) according to the manufacture method of any one described gray-tone mask in the structure 7 to 12, described photomask forms by forming different film-stack, or the composition on film thickness direction has the photomask of inclination.
(structure 14) according to the manufacture method of any one described gray-tone mask in the structure 7 to 13, and described gray-tone mask uses the exposure light in the regulation zone that comprises 365nm～436nm scope.
(structure 15) a kind of gray-tone mask is by making according to the manufacture method of any one described gray-tone mask in the structure 7 to 14.
(structure 16) is characterized in that according to structure 15 described gray-tone masks, with respect to the live width deviation of regulation live width in ± 0.35 μ m.
(structure 17) a kind of pattern transfer method, employing is according to the resulting gray-tone mask of any one described manufacture method in the structure 7 to 14, perhaps adopt according to structure 15 or 16 described gray-tone masks, have exposure illumination is mapped to by the step of exposure on the transcription body, form the regulation transcription corrosion-resisting pattern that comprises the different part of residual film value on by the transcription body.
Graytone mask blank according to the present invention is optionally to reduce the graytone mask blank that adopts in the manufacturing to the gray-tone mask that forms the expectation transcription pattern comprise the different part of residual film value by the exposure of the exposure light of transcription body, on by the photoresist on the transcription body according to the position, changes at the composition of the photomask that forms on the transparency carrier on film thickness direction.Thus, reduced drawing the surface reflectivity of light.In addition, semi-transparent film is adjusted to below 45% the surface reflectivity of drawing light.Further desirably, the semi-transparent film of graytone mask blank is adjusted to below 30% the surface reflectivity of drawing light when drawing.Thus, even, also can correctly be reproduced in the CD of the pattern that forms on the mask, and can reduce its change for the such part that needs precision of groove.And the CD change that obtains the pattern on the mask can reach the gray-tone mask that for example requires corresponding specified standard specification with the miniaturization of pattern.In addition, adopt the gray-tone mask that obtains to the time, do not have the influence of the scattered light that causes by the exposure reflection of light, can access good transcription characteristic by transcription body transcription pattern.
In addition, carry out the transcription of pattern, can on by the transcription body, form high-precision transcription pattern by the above-mentioned gray-tone mask that adopts precision to form the CD of pattern well.
Description of drawings
Fig. 1 is the sectional view that is used to illustrate the pattern transfer method that adopts gray-tone mask.
Fig. 2 is the sectional view that illustrates according to the manufacturing step of the gray-tone mask of first embodiment of the invention.
Fig. 3 is the sectional view that illustrates according to the manufacturing step of the gray-tone mask of second embodiment of the invention.
Fig. 4 is the chart that the correlativity of surface reflectivity and CD (live width) is shown.
Fig. 5 is the performance plot at the semi-transparent film of the gray-tone mask shown in the second embodiment of the invention.
Embodiment
Below, be used to implement preferred forms of the present invention based on description of drawings.
[first embodiment]
Fig. 2 is the sectional view that illustrates according to the manufacturing step of the gray-tone mask of present embodiment.The situation of the gray-tone mask of making the TFT substrate manufacturing usefulness that comprises light shielding part, transmittance section and semi light transmitting part is described in the present embodiment.
The graytone mask blank of Shi Yonging in the present embodiment, on transparency carrier 24, form successively and for example comprise the semi-transparent film 26 of molybdenum silicide and be the photomask 25 of principal ingredient with chromium for example, and apply resist thereon and form etchant resist 27 (with reference to figure 2 (a)).As the material of photomask 25, except above-mentioned be the material of principal ingredient with Cr, for example also have Si, W, Al etc.In the present embodiment, the transmitance of light shielding part determines by the lamination of above-mentioned photomask 25 and following semi-transparent film 26, and the selection by each membrane material and thickness, as summation optical concentration is set in more than 3.0.
At first, carrying out the first time draws.Though common electronics lines or the light (single wavelength light) of adopting in drafting in the present embodiment as drawing gloss laser (light of the provision wavelengths in 300～450nm scope, for example 413nm, 355nm etc.) more.As above-mentioned resist, use positive type photoresist.By the device pattern (pattern of formation corrosion-resisting pattern on the zone corresponding) of the etchant resist on the photomask 25 27 being drawn regulation, and after drawing, carry out video picture, form regional corresponding corrosion-resisting pattern 27 (with reference to figure 2 (b)) with light shielding part with light shielding part.
Next, with above-mentioned corrosion-resisting pattern 27 as etching mask, etching photomask 25, thus form and the corresponding photomask pattern in light shielding part zone, and make the semi-transparent film of formation semi light transmitting part and expose with the regional corresponding semi-transparent film of transmittance section.Under using, as engraving method, can be a certain in dry ecthing or the wet etching, but adopt dry ecthing in the present embodiment with the situation of chromium as the photomask 25 of principal ingredient.Remove remaining corrosion-resisting pattern (with reference to figure 2 (c)).
Next, on whole of substrate, form the etchant resist identical, carry out secondary drafting with primary etchant resist.In secondary drafting, the pattern of drawing regulation is to form corrosion-resisting pattern on light shielding part and semi light transmitting part.Form in the zone in the transmittance section, be mapped on the etchant resist on the semi-transparent film 26 drawing illumination.After the drafting,, on the zone corresponding, form corrosion-resisting pattern 28 (with reference to figure 2 (d)) with light shielding part and semi light transmitting part by carrying out video picture.
Next, as etching mask, the semi-transparent film 26 on the zone, transmittance section that etching is exposed forms transmittance section (with reference to figure 2 (e)) with above-mentioned corrosion-resisting pattern 28.And, remove remaining corrosion-resisting pattern, on transparency carrier 24, finish the light shielding part 21 that has the stack membrane by semi-transparent film 26 and photomask 25 and constitute, the transmittance section 22 of exposing transparency carrier 24 and the gray-tone mask (with reference to figure 2 (f)) of the semi light transmitting part 23 that constitutes by semi-transparent film 26.
Shown in Fig. 2 (a), graytone mask blank involved in the present invention has semi-transparent film 26 and photomask 25 successively on transparency carrier 24.Semi-transparent film 26 in the above-mentioned graytone mask blank (Fig. 2 (a)) has transit dose about 10～80%, preferably 20～60% transit dose with respect to the transit dose of the exposure light of transparency carrier 24.Material as above-mentioned semi-transparent film 26, for example chromium compound, Mo compound, Si, W, Al etc., as chromium compound, chromium oxide (CrOx), chromium nitride (CrNx), nitrogen chromium oxide (CrOxN), charomic fluoride (CrFx) are arranged and comprise the compound of carbon or hydrogen therein, as the Mo compound, except MoSix, also comprise nitride, oxide, oxides of nitrogen, carbonide of MoSi etc.In addition, the transmitance of the semi light transmitting part on the mask of formation is set by the membrane material of above-mentioned semi-transparent film 26 and the selection of thickness.At this, in Fig. 2 (c), for the photomask 25 on the semi-transparent film 26 of etching, preferably the etching selectivity that has at etchant for semi-transparent film and photomask is favourable.Therefore, the material of semi-transparent film preferably uses the Mo compound, uses MoSix (transmitance is 50%).
On the other hand, photomask 25 uses the material as principal ingredient with Cr, and particularly, photomask 25 comprises the structure that composition is changed on film thickness direction.For example, as photomask 25, can adopt stacked chromium oxide (CrOx) on the layer that constitutes by crome metal, perhaps, perhaps go up the film that stacked crome metal, chromium oxide (CrOx) etc. constitute at the layer that constitutes by chromium nitride (CrNx) at the layer upper strata nitrine chromium oxide (CrOxNy) that constitutes by crome metal.At this, the photomask 25 by stacked formation can be to have the clearly lamination of boundary, perhaps comprises not the film that the clear and definite composition of boundary tilts.By adjusting this composition and thickness, can reduce drawing the surface reflectivity of light.25 pairs of surface reflectivities of drawing light of photomask can be about 10～15%.Therefore, in above-mentioned primary drawing step (Fig. 2 (b)), can be suppressed at the CD change when drawing in the etchant resist on the photomask 25.And,, can adopt the known photomask of exposure light having been implemented antireflection film as such photomask 25.
In the present invention, above-mentioned semi-transparent film 26 is characterised in that, is adjusted to below 45% at the surface reflectivity of drawing light.Thus, in above-mentioned secondary drawing step (Fig. 2 (d)), can reduce the influence of the surface reflectivity of the semi-transparent film 26 relative with CD change when drawing on the etchant resist on semi-transparent film 26.And, can adopt the provision wavelengths of 300～450nm at the drafting light of this employing, and use suitable mutually therewith photoresist more suitable.
As mentioned above, because by adopting such graytone mask blank, step according to above-mentioned Fig. 2 is made gray-tone mask, can reduce with the CD of pattern on mask and change the influence of the surface reflectivity of relative semi-transparent film 26, therefore the result can make the CD of mask pattern correctly reproduce expectation value, and realizes that easily miniaturization with pattern requires the required standard specification that adapts to.In addition, adopt the gray-tone mask that obtains, to by transcription body transcription pattern the time, can also reduce the influence of the scattered light that causes by the exposure reflection of light.
Form the CD of the mask pattern that obtains by above present embodiment well by precision, and adopt the above-mentioned gray-tone mask of the stray light effects in the time that pattern transfer can being reduced, carry out as shown in Figure 1 can on by the transcription body, forming high-precision transcription pattern (corrosion-resisting pattern 33) to by the pattern transfer of transcription body 30.
And, only be a representational example at the pattern form of the light shielding part 21 shown in Fig. 1 and Fig. 2, transmittance section 22 and semi light transmitting part 23, the present invention is not limited to this certainly.
[second embodiment]
Fig. 3 is the sectional view that illustrates according to the manufacturing step of the gray-tone mask of present embodiment.The situation of the gray-tone mask of making the TFT substrate manufacturing usefulness that comprises light shielding part, transmittance section and semi light transmitting part also is described in the present embodiment.
Shown in Fig. 3 (a), the mask blank of use, forming on transparency carrier 24 is the photomask 25 of principal ingredient with chromium for example, and applies resist thereon and form etchant resist 27, does not form semi-transparent film under this state.As the material of photomask 25, except above-mentioned be the material of principal ingredient with Cr, for example also have Si, W, Al etc.In the present embodiment, the transmitance of light shielding part determined by the lamination of above-mentioned photomask 25 and following semi-transparent film 26, and the selection by each membrane material and thickness, is set in more than 3.0 as the summation optical concentration.
And, in the present embodiment, as described below, after the pattern that forms above-mentioned photomask 25, on whole of the substrate that comprises this photomask pattern, form semi-transparent film.
At first, carrying out the first time draws.As above-mentioned resist, use positive type photoresist.And, the etchant resist on the photomask 25 27 is drawn the device pattern pattern of the regional corresponding corrosion-resisting pattern of light shielding part and transmittance section (formation with) of regulation.
By after drawing, carrying out video picture, the corrosion-resisting pattern 27 (with reference to figure 3 (b)) that formation is corresponding with light shielding part and transmittance section.
Next, with above-mentioned corrosion-resisting pattern 27 as etching mask, etching photomask 25, thus form the photomask pattern.Under using, as engraving method, can be a certain in dry ecthing or the wet etching, but adopt wet etching in the present embodiment with the situation of chromium as the photomask 25 of principal ingredient.
After removing remaining corrosion-resisting pattern (with reference to figure 3 (c)), form semi-transparent film 26 (with reference to figure 3 (d)) in comprising on whole of photomask pattern on the substrate 24.
Adopt the semi-transparent film that comprises chromium oxide (the exposure light transmission rate is 40%) that forms by spatter film forming in the present embodiment.
At this, photomask 25 and embodiment 1 can adopt the measure of implementing to reduce surface reflectivity in the same manner.In addition, above-mentioned semi-transparent film 26 is adjusted to below 45% the surface reflectivity of drawing light same as described abovely.
Next, on the semi-transparent film 26 of above-mentioned graytone mask blank, form the etchant resist identical, and on the etchant resist on this semi-transparent film 26, carry out secondary drafting with etchant resist 27.In secondary drafting, the pattern of drawing regulation is to form corrosion-resisting pattern on light shielding part and semi light transmitting part.After the drafting,, on the zone corresponding, form corrosion-resisting pattern 28 (with reference to figure 3 (e)) with light shielding part and semi light transmitting part by carrying out video picture.Because 26 pairs of above-mentioned semi-transparent films are drawn the surface reflectivities of light and are adjusted to below 45%, thus can reduce with etchant resist on semi-transparent film 26 on CD when drawing change the influence of the surface reflectivity of relative semi-transparent film 26.And, can adopt the drafting light identical as drawing light with above-mentioned primary drawing at this.
Next, as etching mask, the semi-transparent film 26 that etching is exposed and the stack membrane of photomask 25 form transmittance section 22 with above-mentioned corrosion-resisting pattern 28.As engraving method in this case, adopt wet etching in the present embodiment.And, remove remaining corrosion-resisting pattern, on transparency carrier 24, finish the light shielding part 21 that has the stack membrane by photomask 25 and semi-transparent film 26 and constitute, the transmittance section 22 of exposing transparency carrier 24 and the gray-tone mask (with reference to figure 3 (f)) of the semi light transmitting part 23 that constitutes by semi-transparent film 26.
And, in above-mentioned first and second embodiments,, in the photomask that adopts usually, as described below to the influence that live width CD gives to the surface reflectivity of drawing light according to the inventor's research.
Figure 4 illustrates live width change tendency with respect to surface reflectivity.As the drafting light that in above-mentioned patterning, adopts, there is the laser that adopts wavelength 300～450nm, for example the situation of the laser of 413nm wavelength.Measurement result under the situation of the laser of the 436nm wavelength that above-mentioned laser employing shown in Figure 4 is similar to.Fig. 4 illustrates the result of the permissible range of the reflectivity under the situation that relational checking with reflectivity and live width adopts this laser.
Specifically, the relation of the CD of Fig. 4 surface reflection that the photomask blank that constitutes drawing object is shown and the pattern relative with it.Wherein, though on the Cr photomask, apply resist, and experimentize by the laser drafting, the film of other materials also is fine.The increase reflectivity is arranged, and the CD of the pattern that forms becomes big tendency.When converting by Fig. 4 as can be known, the change of reflectivity 1%, live width change 10nm.
In the mask that the film crystal pipe manufacturer is used, try to achieve ± the CD precision of 0.35 μ m.Therefore, must be in ± 35% to the change of exposure reflection of light rate.Make in the groove (for example the width of groove less than 2 μ m etc.) of usefulness at TFT with stricter fine pattern, owing to obtain ± the CD precision of 0.20 μ m, so the reflectivity change should be unable to surpass ± 20%.
In addition, in existing binary mask, owing on the Cr photomask, form antireflection film under most situations, and its surface reflectivity is about 10～15%, so the maximum reflectivity of allowing by above-mentioned change is in 30% in finer pattern in 45%.
In having the gray-tone mask of semi-transparent film, because it is different with photomask, can not cremasteric reflex prevent function, so reflectivity has the tendency of rising, if this adjust is drawn the illuminate condition (Du Siliang) of light then can under the CD precision identical, draw with the Cr photomask.But, in gray-tone mask, have the product of various transmitances and deposit, adopt the drafting condition corresponding inefficent and complicated to their with each reflection characteristic.Therefore, even find that the drafting condition is constant, to the surface reflectivity of drawing light also with the surface reflectivity of photomask in the same manner all in 45%, if when having finer pattern in 30%, the CD precision of then satisfying the demand, and throughput rate can not descend simultaneously, can satisfy market demands.
Photomask and semi-transparent film can form by known method such as sputtering methods.In graytone mask blank of the present invention, satisfy the film of above-mentioned surface reflectivity by film forming, check, select the blank of film forming further, can only use graytone mask blank thus with enough transcription precision.Semi-transparent film is designed to be no more than 45% to the surface reflectivity of drawing light.And the lower limit of the surface reflectivity of semi-transparent film is preferably more than 10%.This is because when exposure sources (mask alignment device) is gone up the input mask, in order to detect its existence or position, adopt the reflection of light light of irradiation first type surface.Like this, adopt the part of exposing semi-transparent film, can carry out the affirmation of mask, the affirmation of position.
In order to make surface reflectivity in above-mentioned scope, the refractive index n and the thickness that can cause by the composition of semi-transparent film design.Further, because the transmitance of the exposure light of semi light transmitting part need be 10～80%, preferably in 20～60% scope, thus can consider these parameters, and design by known film method for designing.Similarly, semi-transparent film can be adjusted into the surface reflectivity of drawing light and be no more than 45% in face.
For example, when the film forming of semi-transparent film, when carrying out above-mentioned adjustment, adopt under the situation of sputtering method, can be undertaken by adjustment to the sputter gas flow.If the semi-transparent film of CrOx, only by adjusting the flow of oxygen, if the semi-transparent film of CrOxNy only by adjusting the flow of oxygen and/or nitrogen, promptly can make the surface reflectivity to drawing light be no more than 45%.
Further, even the surface reflectivity of semi-transparent film of the present invention has some changes (but can not surpass above-mentioned mobility scale), as mentioned above, preferably also be no more than 45%.Therefore, need to check the photomask blank.Use the albedo measurement device in the inspection of surface reflectivity, the irradiation surface reflectivity of the light time suitable with drawing light is measured in a plurality of places in face, uses the blank of determining to satisfy said reference.
Fig. 5 illustrates the figure of the characteristic of the semi light transmitting part of the employing chromium oxide of record in the above-described 2nd embodiment.Wherein, the exposure light transmission rate that semi light transmitting part is shown is 40%, draws the characteristic that the optical surface reflectivity is the photomask blank of 21.4% (the maximum surface reflectivity in the face is less than 45%).
In Fig. 5, the time of spatter film forming is shown and forms the relation of (forming of film thickness direction) by the cross section that the Auger electron optical spectroscopy forms.As shown in Figure 5, by sputtering time (auger analysis time) is about 5 minutes, the boundary of semi light transmitting part that arrival is formed by chromium oxide and the transparency carrier that formed by glass, afterwards, the monox of the composition of forming as glass is more than the chromium oxide of formation semi light transmitting part.
Form the CD of the mask pattern that obtains by above present embodiment well by precision, and adopt the above-mentioned gray-tone mask of the influence of scattered light in the time that pattern transfer can being reduced, by carry out as Fig. 1 to by the pattern transfer of transcription body 30, can on by the transcription body, form high-precision transcription pattern (corrosion-resisting pattern 33).
As mentioned above, gray-tone mask of the present invention is effectively applied in the photomask of thin film transistor (TFT) (TFT) manufacturing usefulness very much.Especially,, miniaturization rapid along with the action of TFT, the live width of groove has more and more littler tendency, and in this case, the correct transcription that draws a design is necessary.Therefore, find that effect of the present invention is remarkable.
In addition, gray-tone mask of the present invention not only has a kind of semi light transmitting part, and comprises the situation of the masstone mask with a plurality of exposure light transmission rates, further, also comprises in order to make such GTG blank that mask adopted.
Claims (17)
1, a kind of graytone mask blank is optionally reducing according to the position by the exposure of the exposure light of transcription body, on by the photoresist on the transcription body, forms in the manufacturing of gray-tone mask of transcription pattern of the expectation that comprises the different part of residual film value to use,
This graytone mask blank has semi-transparent film and photomask successively on transparency carrier, implement the patterning of regulation respectively on this semi-transparent film and this photomask, thereby forms light shielding part, transmittance section and semi light transmitting part, forms gray-tone mask,
The composition of described photomask on film thickness direction changes, and the surface reflectivity of the drafting light that adopts when during patterning the etchant resist that forms being carried out pattern exposure on this photomask is lowered,
The surface reflectivity of the drafting light that described semi-transparent film adopts when when patterning the etchant resist that forms being carried out pattern exposure on this semi-transparent film is adjusted into and is no more than 45% in face.
2, graytone mask blank according to claim 1 is characterized in that,
The surface reflectivity of the drafting light that described semi-transparent film adopts when carrying out pattern exposure in the etchant resist that forms on this semi-transparent film when patterning is adjusted into and is no more than 30% in face.
3, graytone mask blank according to claim 1 and 2 is characterized in that,
The surface reflectivity at the exposure light that is suitable for when using the gray-tone mask that described graytone mask blank enforcement patterning is formed of described semi-transparent film is more than 10%.
4, graytone mask blank according to claim 1 and 2 is characterized in that,
To each described semi-transparent film and described photomask carry out patterning the time, any one in the drafting light that etchant resist is adopted all is the light of the provision wavelengths in 300nm～450nm scope.
5, graytone mask blank according to claim 1 and 2 is characterized in that,
Described photomask is by forming the stacked of different films or having to tilt to form by the composition on film thickness direction, and the composition on film thickness direction changes thus.
6, graytone mask blank according to claim 1 and 2 is characterized in that,
Described graytone mask blank uses the exposure light in the regulation zone that comprises 365nm～436nm scope.
7, a kind of manufacture method of gray-tone mask, this gray-tone mask optionally reduces by the exposure of the exposure light of transcription body according to the position, on by the photoresist on the transcription body, form the expectation transcription pattern that comprises the different part of residual film value, have transmittance section, light shielding part and see through the semi light transmitting part of part exposure light
Preparation has the graytone mask blank of semi-transparent film and photomask successively on transparency carrier, implement the patterning of regulation respectively on this semi-transparent film and this photomask, thereby forms gray-tone mask,
Described photomask during patterning, reduces the surface reflectivity that the etchant resist that forms is carried out the drafting light of pattern exposure on this photomask by changing the composition on film thickness direction,
The surface reflectivity of the drafting light that described semi-transparent film adopts when when patterning the etchant resist that forms being carried out pattern exposure on this semi-transparent film is adjusted to and is no more than 45% in face.
8, the manufacture method of gray-tone mask according to claim 7 is characterized in that,
Comprise following steps:
On first etchant resist that forms on the described photomask, adopt drafting light to draw first pattern,
As mask, this photomask of etching carries out first patterning with first corrosion-resisting pattern that forms after the video picture,
Remove this first corrosion-resisting pattern,
On the substrate that comprises the semi-transparent film that exposes of part, form second etchant resist, on this second etchant resist, adopt described drafting light draw second pattern and
With second corrosion-resisting pattern that forms after the video picture as mask, this semi-transparent film of etching, thus carry out second patterning;
Described photomask is lowered the surface reflectivity of the drafting light when drawing described first and second patterns,
And described semi-transparent film is to the drafting light when described second pattern of patterning, and surface reflectivity is adjusted to and is no more than 45% in face.
9, a kind of manufacture method of gray-tone mask, this gray-tone mask optionally reduces by the exposure of the exposure light of transcription body according to the position, on by the photoresist on the transcription body, form the expectation transcription pattern that comprises the different part of residual film value, have transmittance section, light shielding part and see through the semi light transmitting part of part exposure light
By first patterning after implementing to form photomask on the transparency carrier, form semi-transparent film on whole of the substrate of the photomask after comprising patterning, by after this semi-transparent film forms, implementing second patterning, on this semi-transparent film and this photomask, implement the patterning of regulation respectively and form gray-tone mask
The surface reflectivity of the drafting light that described photomask adopts when when first patterning etchant resist that forms being carried out pattern exposure on this photomask is lowered,
Described semi-transparent film is when second patterning, and the surface reflectivity of the drafting light that adopts when the etchant resist that forms on this semi-transparent film that forms on described photomask is carried out pattern exposure is adjusted to and is no more than 45% in face.
10, according to the manufacture method of any one described gray-tone mask in the claim 7 to 9, it is characterized in that,
The surface reflectivity to the exposure light that adopts when using described gray-tone mask of described semi-transparent film is adjusted to more than 10%.
11, according to the manufacture method of any one described gray-tone mask in the claim 7 to 9, it is characterized in that,
The surface reflectivity to described drafting light of described semi-transparent film is adjusted to and is no more than 30% in face.
12, according to the manufacture method of any one described gray-tone mask in the claim 7 to 9, it is characterized in that,
When each of described semi-transparent film and described photomask carried out patterning, all be the light of the provision wavelengths in 300nm～450nm scope to the drafting light that etchant resist adopted.
13, according to the manufacture method of any one described gray-tone mask in the claim 7 to 9, it is characterized in that,
Described photomask forms by forming different film-stack, or the composition on film thickness direction has the photomask of inclination.
14, according to the manufacture method of any one described gray-tone mask in the claim 7 to 9, it is characterized in that,
Described gray-tone mask uses for the exposure light in the regulation zone that comprises 365nm～436nm scope.
15, a kind of gray-tone mask is by making according to the manufacture method of any one described gray-tone mask in the claim 7 to 9.
16, gray-tone mask according to claim 15, with respect to the regulation live width the live width deviation in ± 0.35 μ m.
17, a kind of pattern transfer method, employing is according to the resulting gray-tone mask of any one described manufacture method in the claim 7 to 9, have exposure illumination is mapped to by the step of exposure on the transcription body, form the transcription corrosion-resisting pattern of the regulation that comprises the different part of residual film value on by the transcription body.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007256926 | 2007-09-29 | ||
| JP2007256926A JP4934236B2 (en) | 2007-09-29 | 2007-09-29 | Gray tone mask blank, gray tone mask manufacturing method, gray tone mask, and pattern transfer method |
| JP2007-256926 | 2007-09-29 |
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| CN101458449A true CN101458449A (en) | 2009-06-17 |
| CN101458449B CN101458449B (en) | 2013-03-13 |
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| CN2008101868961A Active CN101458449B (en) | 2007-09-29 | 2008-09-27 | Graytone mask blank, method of manufacturing graytone mask and graytone mask, and pattern transfer method |
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| Country | Link |
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| JP (1) | JP4934236B2 (en) |
| KR (2) | KR20090033315A (en) |
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| TW (1) | TWI448816B (en) |
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| CN102207675A (en) * | 2010-03-31 | 2011-10-05 | Hoya株式会社 | Photo mask and manufacturing method thereof |
| CN103412463A (en) * | 2013-08-27 | 2013-11-27 | 南通富士通微电子股份有限公司 | Mask plate and manufacturing method thereof |
| CN108227368A (en) * | 2018-01-17 | 2018-06-29 | 京东方科技集团股份有限公司 | A kind of mask plate, display base plate and display device |
| CN110544671A (en) * | 2019-08-26 | 2019-12-06 | 上海新微技术研发中心有限公司 | Method for forming semiconductor structure |
| CN110783263A (en) * | 2019-08-26 | 2020-02-11 | 上海新微技术研发中心有限公司 | Method for forming semiconductor structure |
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| JP2010044149A (en) * | 2008-08-11 | 2010-02-25 | Hoya Corp | Multi-gradation photomask, pattern transfer method, and manufacturing method of display unit using multi-gradation photomask |
| TWI463250B (en) * | 2012-07-18 | 2014-12-01 | Unimicron Technology Corp | Gray-tone mask, manufacturing method thereof and method of forming trench on substrate by using the same |
| JP2023050611A (en) * | 2021-09-30 | 2023-04-11 | 株式会社エスケーエレクトロニクス | Photomask and manufacturing method of photomask |
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| JPS63167354A (en) * | 1986-12-29 | 1988-07-11 | Hoya Corp | Pattern forming method |
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| JP4393290B2 (en) * | 2003-06-30 | 2010-01-06 | Ｈｏｙａ株式会社 | Method for manufacturing gray tone mask and method for manufacturing thin film transistor substrate |
| JP4521694B2 (en) * | 2004-03-09 | 2010-08-11 | Ｈｏｙａ株式会社 | Gray-tone mask and thin film transistor manufacturing method |
| KR101143005B1 (en) * | 2004-12-14 | 2012-05-08 | 삼성전자주식회사 | Mask and method for manufacturing semiconductor device and thin film transistor array panel using the mask |
| WO2007010866A1 (en) * | 2005-07-15 | 2007-01-25 | Ulvac Coating Corporation | Blanks for gray tone mask, gray tone mask using said blanks, and process for producing said blanks |
| JP5196098B2 (en) * | 2005-09-21 | 2013-05-15 | 大日本印刷株式会社 | Photomask having gradation and method for manufacturing the same |
| JP4834203B2 (en) * | 2005-09-30 | 2011-12-14 | Ｈｏｙａ株式会社 | Photomask blank manufacturing method and photomask manufacturing method |
| JP4726010B2 (en) * | 2005-11-16 | 2011-07-20 | Ｈｏｙａ株式会社 | Mask blank and photomask |
| JP4516560B2 (en) * | 2005-12-26 | 2010-08-04 | Ｈｏｙａ株式会社 | Mask blank and photomask |
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| JP2007219038A (en) * | 2006-02-15 | 2007-08-30 | Hoya Corp | Mask blank and photomask |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102207675A (en) * | 2010-03-31 | 2011-10-05 | Hoya株式会社 | Photo mask and manufacturing method thereof |
| CN103412463A (en) * | 2013-08-27 | 2013-11-27 | 南通富士通微电子股份有限公司 | Mask plate and manufacturing method thereof |
| CN108227368A (en) * | 2018-01-17 | 2018-06-29 | 京东方科技集团股份有限公司 | A kind of mask plate, display base plate and display device |
| US11054737B2 (en) | 2018-01-17 | 2021-07-06 | Boe Technology Group Co., Ltd. | Mask, display substrate and display device |
| CN110544671A (en) * | 2019-08-26 | 2019-12-06 | 上海新微技术研发中心有限公司 | Method for forming semiconductor structure |
| CN110783263A (en) * | 2019-08-26 | 2020-02-11 | 上海新微技术研发中心有限公司 | Method for forming semiconductor structure |
| CN110783263B (en) * | 2019-08-26 | 2022-12-16 | 上海新微技术研发中心有限公司 | Method for forming semiconductor structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101458449B (en) | 2013-03-13 |
| JP2009086380A (en) | 2009-04-23 |
| TW200925775A (en) | 2009-06-16 |
| KR20090033315A (en) | 2009-04-02 |
| KR20100061435A (en) | 2010-06-07 |
| JP4934236B2 (en) | 2012-05-16 |
| TWI448816B (en) | 2014-08-11 |
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