TWI498667B - A mask substrate and a mask for manufacturing a flat panel display device - Google Patents

A mask substrate and a mask for manufacturing a flat panel display device Download PDF

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Publication number
TWI498667B
TWI498667B TW102138847A TW102138847A TWI498667B TW I498667 B TWI498667 B TW I498667B TW 102138847 A TW102138847 A TW 102138847A TW 102138847 A TW102138847 A TW 102138847A TW I498667 B TWI498667 B TW I498667B
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Taiwan
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film
semi
transmittance
line
transmissive film
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TW102138847A
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Chinese (zh)
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TW201407260A (en
Inventor
Masaru Mitsui
Michiaki Sano
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Hoya Corp
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Priority to JP2006348984A priority patent/JP4516560B2/en
Publication of TW201407260A publication Critical patent/TW201407260A/en
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Publication of TWI498667B publication Critical patent/TWI498667B/en

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Description

Photomask substrate and reticle for manufacturing flat panel display devices

The present invention relates to a reticle substrate and a reticle, and more particularly to a reticle substrate (a substrate for a reticle) for fabricating an FPD and a reticle (transfer reticle) fabricated using the associated reticle substrate.

In recent years, in the area of a large-sized FPD mask, attempts have been made to reduce the number of masks by using a gray scale mask having a semi-translucent film (a so-called translucent film for a gray scale mask) (Non-licensed document 1) ).

Here, as shown in FIGS. 9(1) and 10(1), the transparent substrate has a light shielding portion 1, a transmission portion 2, and a gray scale portion 3. The gray scale portion 3 has a function of adjusting the amount of transmission, for example, as shown in Fig. 9 (1), is a region in which the semi-transmissive film 3a' for the gray scale mask is formed; or, as shown in Fig. 10 (1) A region in which a gray scale pattern (a fine light-shielding pattern 3a and a fine light-transmitting portion 3b below the analysis limit of the exposure machine for a large LCD using a gray scale mask) is formed. The purpose of forming the gray scale portion 3 is to reduce the amount of light transmitted through the region and reduce the amount of irradiation from the region, and to control the film thickness after development of the photoresist corresponding to the relevant region to a desired value.

In the case of a large-scale exposure apparatus in which a large-scale gray scale mask is mounted on a mirror projection method or a lens method using a lens, the exposure light passing through the gray scale portion 3 becomes insufficient for the entire exposure amount. Therefore, the positive photoresist that is exposed through the gray scale portion 3 is only changed in film thickness. It is thin and remains on the substrate. In other words, since the difference in the amount of exposure causes the photoresist to have a different solubility to the developer in the portion corresponding to the normal light-shielding portion 1 and the portion corresponding to the gray-scale portion 3, the shape after development is as shown in the figure. 9(2) and FIG. 10(2), for example, corresponding to the portion 1' of the normal light-shielding portion 1 is about 1 μm and the portion corresponding to the gray-scale portion 3 is about 0.4-0.5 μm, which corresponds to transmission. Part 2 is part of the 2' without photoresist. Further, the first etching of the substrate to be processed is performed in the portion 2' where no photoresist is formed, and the photoresist of the thin portion 3' corresponding to the gray scale portion 3 is removed by ashing or the like, and The second etching is performed in this section, and two mask components are conventionally performed by one mask to reduce the number of masks.

[Non-licensed literature 1] Monthly FPD Intelligence, P.31-35, May 1999.

The LSI photomask for manufacturing semiconductor elements such as a microprocessor, a semiconductor memory, or a system LSI has a maximum of about 6 inches, and is mostly mounted on a reduced projection exposure apparatus using a step exposure method. In the related LSI reticle, a ruthenium wafer is used as a transfer substrate, and is cut into a plurality of wafers to be used as a final type. In the related LSI reticle, it is necessary to break the resolution limit determined by the exposure wavelength, and to shorten the wavelength of the exposure wavelength. Here, in the LSI photomask, a single-color exposure light (a single-wavelength exposure light) is used from the viewpoint of eliminating the color difference caused by the lens system and improving the degree of resolution. The short wavelength of the single-color exposure wavelength of the LSI reticle is toward the g-line (436 nm), i-line (365 nm), KrF excimer laser (248 nm), and ArF excimer laser of the ultrahigh pressure mercury lamp ( 193 nm). In addition, the minimum line width of the reticle pattern formed on the LSI photomask is about 0.26 μm (shape The minimum line width of the pattern formed on the wafer is about 0.07 μm).

In contrast, when the FPD is used in an exposure apparatus in which a large-sized photomask is mounted on a flat mirror projection (double-projection exposure by a scanning exposure method), (1) it is separated by only the reflection optical system. Since the mask is exposed, there is no problem that the color difference due to the existence of the lens system of the LSI mask is not generated, and (2) in comparison with the review, the multi-color wave exposure (having plural numbers) The effect of multi-wavelength exposure of wavelength (based on the interference of transmitted or reflected light or the effect of color shift), etc., because larger exposure light intensity than monochromatic wave exposure (single wavelength exposure) is advantageous in the integrated production surface. For the sake of the above-mentioned (2), the multi-color wave exposure is performed by using the wide wavelength band of the i-line to the g-line of the high-pressure mercury lamp.

In addition, in the large-sized photomask substrate for FPD, the large-size substrate is based on the manufacturing principle principle (the manufacturing method or the limit surface of the manufacturing device), and the variation of the manufacturing conditions (process variation) compared to the case of the small substrate. ), the characteristics of the film (film composition, film quality, transmittance, reflectance, optical density, etching characteristics, other optical properties, film thickness, etc.) are likely to occur between the inner surface and the substrate. Features such as inner surface and substrate are uniform. This feature is a tendency to grow with the larger size and higher definition of FPD.

Here, there are disadvantages in the case where the characteristics of the inner surface and the substrate vary greatly.

(1) A product with a large variation in characteristics cannot be said to be of high quality in terms of large variation; it cannot be said to be good in terms of performance.

(2) Once the characteristics vary greatly, it is difficult to control within the specifications, and it is difficult and laborious to manufacture a large number of products controlled within the specifications.

(3) Due to the large variation in characteristics, it is easy to exceed the specifications and reduce productivity (yield).

(4) Once the variation of the characteristics is large, the specifications must be relaxed in order to cope with this variation. Therefore, it is impossible to pursue high standardization, and it is difficult to cope with high standardization.

Further, the minimum line width of the pattern formed in the large-sized photomask for FPD is about 1 μm or less, and the minimum line width of the pattern formed on the large-sized glass substrate for transfer is about 2 to 3 μm, which is larger than the minimum line width of the most advanced LSI. However, compared to LSI, FPD is used as a large-area FPD product, and the final type is a large area, so all of the components must have functions. Therefore, once there is a possibility of hindering the function of all the components and the possibility of hindrance, defects outside the specifications can be never allowed. In this case, in the FPD product, it is necessary to achieve no defects in a large area. However, when the variation between the characteristics of the inner surface of the large-sized photomask substrate for FPD and the substrate is large, for example, it is difficult to increase the large size of the FPD. Features such as the quality and output of masks and large-area FPD products. This feature is a tendency to grow with the larger size and higher definition of FPD.

As described above, in the large-sized photomask for FPD, depending on the difference in the use environment of the mask or the difference in the size of the mask, it can be said that it is required (that is, it is necessary for review). The mask for LSI is not required (ie, there is no review). The characteristics of the necessary).

The present inventors focused on multi-color wave exposure regarding the unique characteristics peculiar to the large reticle for FPD based on the difference in the use environment of the reticle.

First, the advantage of exposure (multi-color wave exposure) of a plurality of wavelengths is that the exposure light intensity is larger than that of a single wavelength exposure (monochrome exposure). For example, exposure light having a h-line and a wavelength band spanning the i-line to the g-line is exposed to a larger intensity than a monochromatic wave or only a g-line monochromatic wave exposure. Therefore, the productivity of the component can be improved.

For example, there are many cases where large display elements such as FPD devices are manufactured by the double exposure method. Compared with the reduction exposure method used in the manufacture of an LSI device or the like, in the double magnification method, since the incident intensity of the exposure light irradiated on the element surface is small, the reinforcing radiation is obtained by using a plurality of wavelengths. The advantage of the incident intensity of the exposed light on the component side.

The purpose of this application is to propose countermeasures in view of the problems that occur with exposure to polychromatic waves.

The present inventors focused on the multi-color wave exposure unique to the FPD large-sized photomask, and studied the characteristic characteristics unique to the large-sized photomask for FPD suitable for the multi-color wave exposure.

As a result, the following matters were clarified.

(1) The exposure light intensity (relative intensity) of the i-line, the h-line, and the g-line radiated by the ultrahigh pressure mercury lamp as an exposure light source is substantially equal. In more detail, although the exposure light intensities (relative intensities) of the i-line, the h-line, and the g-line are slightly equal, the intensity of the central h-line is about slightly lower than the intensity of the i and g-lines at both ends ( Refer to Figure 1).

In other words, in terms of relative intensity, it is necessary to pay equal attention to the i-line, the h-line, and the g-line system, and to find the effect due to the relative strength when exposed to the photomask (for example, the photosensitivity of the photoresist, etc.) ) It is also necessary to pay equal attention.

Here, once the transmittance (semi-transmission rate) of the semi-transmissive film (semi-transmissive film) for the gray scale mask is considered, the transmittance of the translucent film (ie, the semi-transmission rate) T is divided. A function of the wavelength λ, expressed as T = f(λ). The spectral curve of the transmittance (i.e., the half transmittance) of the semi-transmissive film is mainly determined by the film material, the film composition, the film quality, the production conditions, the manufacturing apparatus, and the like.

On the other hand, the transmittance (i.e., the semi-transmissivity) T of the semi-transmissive film is expressed by T = I / Io (1) (in the formula (1), T: the translucency of the semi-translucent film Rate (ie, half transmittance), Io: incident light intensity, I: transmitted light intensity).

It can be seen from the above that the relative intensities of the i-line, the h-line, and the g-line are equal, so the incident light intensity Io of the i-line, the h-line, and the g-line is equal; if the wavelengths of the i-line, the h-line, and the g-line are half-transparent, When the transmittance (i.e., the half transmittance) T of the film is equal, the transmitted light intensity I with respect to the i-line, the h-line, and the g-line is also equal to the above equation (1). Preferably, the above characteristics are, for example, The degree to which the photosensitivity of the photoresist is easily simulated is considered.

In other words, in the longitudinal axis: the transmittance of the semi-transmissive film (ie, the half transmittance) T-horizon axis: the wavelength λ, in the broad wavelength band of the i-th to g-line, The split light transmission line of the spectral characteristic (i.e., the oblique small transmittance light transmittance line opposite to the horizontal axis) is preferable. The inclination of the horizontal axis of the split light transmittance line with respect to the transmittance of the semi-transmissive film (that is, the half transmittance) is varied (changed) by the vertical axis scale, but the scale of the vertical axis is the same. .

(2) A film system having a transmittance (i.e., a half transmittance) of an approximately equal half-transmissive film with respect to the i-line, the h-line, and the g-line can be actually manufactured.

(3) In a large FPD reticle for multi-color wave exposure, A film having a transmittance (i.e., a half transmittance) of a substantially uniform semi-transmissive film with respect to i lines, h lines, and g lines which are approximately equal in relative strength is practically applied to a mask substrate and a mask. In the case of a film having a large variation in transmittance (i.e., semi-transmissivity) with respect to the semi-transmissive film of the i-line, the h-line, and the g-line, it is easy to produce the inner surface and the inter-substrate half in a large amount. Since the transmittance of the light-transmitting film (that is, the semi-transmission rate) is uniform, the quality of the mask base can be improved and the output can be improved, so that the quality of the large-area FPD product can be promoted or the output can be improved.

(4) In relation to the above (1) and (3), compared with the i-line, the h-line, and the g, the film design that considers the influence of the multi-color wave exposure (the influence of the interference of the transmitted light, etc.) The film design of the line having a transmittance of approximately equal light transmissive film (i.e., semi-transmissivity) is beneficial to the high quality and output improvement of the reticle substrate and the FPD article itself.

(5) In connection with the above (1), (3), and (4), in order to have a transmittance (i.e., a half transmittance) of the semi-transmissive film which is approximately equal to at least the i-line, the h-line, and the g-line, The optically designed and fabricated spectral transmittance line is inclined to a flat film system to split the light transmittance line into a flat film in a wavelength band wider than the i-line to the g-line (for example, at a wavelength across the wavelength) In the wavelength range of 330 nm to 470 nm, the transmittance of the semi-transmissive film (ie, the half transmittance) is preferably less than 10% (or even less than 5%) and is optically designed and fabricated. And the variation range H of the transmittance (ie, the half transmittance) of the light transmissive film is small in response to fluctuations in manufacturing conditions (changes in the process), or changes in the film composition or changes in film quality (physical properties). Referring to Fig. 7 (1)), therefore, it is easy to mass-produce (refer to Fig. 8 (2)) a more uniform product (a reticle base or a reticle which is more strict than the specifications k, k'), and further, it is easy to further enhance the lie. Within the specifications k, k' The reticle base or the reticle is produced and manufactured in large quantities (refer to Fig. 7 (2)).

In contrast, in the above-mentioned wavelength band, when the inclination is severe and the fluctuation width H′ of the spectral transmittance is large (see FIG. 7( 2 )), the spectral transmittance line will go up and down with a small number of process variations. Since the offset is degraded, the uniformity of the characteristics is deteriorated (see Fig. 8 (1)), and the shift of the spectral transmittance line is increased, and the ratio falling outside the specifications k and k' is also increased, so that it is difficult to manufacture. Moreover, productivity is also poor (refer to Fig. 7 (2)). Therefore, in reality, in the case of flatness, the specifications k and k' are not relaxed, and the productivity cannot be improved.

When the fluctuation width h' of the spectral transmittance line located in the wavelength band is originally large, the fluctuation width H' before and after the dispersion of the spectral transmittance line is also large (see Fig. 7 (1)). On the other hand, when the fluctuation width h' of the spectral transmittance line located in the wavelength band is originally small, the fluctuation width H before and after the offset is also small (see Fig. 7 (1)). This is because when the spectral transmittance line is shifted upward, downward, and leftward by the process variation, the fluctuation width H' formed by the lowest value before the offset and the maximum value after the offset is inclined from the spectral transmittance line. In the case of being flat, the fluctuation width H (assuming that the amounts of shift in the up, down, left, and right directions are the same) is large (see FIG. 7(1)).

In addition, once the inclination of the spectral transmittance line is severe (when the fluctuation range is large), the margin m' with respect to the specification values k and k' is difficult to obtain, and it is determined to match the upper limit of the fluctuation range. When the tolerance m' is sufficient, the specification value k' becomes too poor (see Fig. 7 (2)). On the other hand, when the inclination of the spectral transmittance line is flat, the tolerance m with respect to the upper limit of the fluctuation width can be made large (with a margin) (see FIG. 7 (2)).

In the case of a film having a large fluctuation range of the spectral transmittance line in the wavelength band, even if there is a change in the fluctuation range of the spectral transmittance line (for example, a tilt change or a line shift), It is not easy to manage and identify the same film, so it is not good (refer to Figure 8 (1)).

(6) In connection with the above (2), it has been found that a film which can actually manufacture a film having a transmittance (i.e., a half transmittance) of an approximately semi-transmissive film with respect to an i-line, an h-line, and a g-line is obtained. The following matters have been clarified.

(i) O is contained in a film such as a semi-transmissive film (for example, a CrO film) for a gray scale mask of a chromium oxide film (due to O in the film), so In the wavelength band having a wider wavelength band of the i-th line to the g-line, the inclination of the spectral transmittance line (larger inclination to the horizontal axis λ) is large, and the variation range of the spectral transmittance increases.

(ii) in the chrome nitride film-based semi-transmissive film (for example, CrN, CrCN, CrON), although the ratio exceeds the i-line to g in comparison with the chrome oxide film-based semi-transmissive film. In the wider wavelength band of the wavelength band of the line, the inclination of the spectral transmittance line is moderate and flat (the inclination to the horizontal axis λ is small), but in order to achieve high quality or easy mass of the mask base and the FPD itself For the purpose of manufacturing a more uniform product (a product with strict specifications), not only the chrome nitride film, but also a semi-transmissive film can achieve related purposes, and must also find and use predetermined conditions that meet the relevant objectives. The chromium nitride film is a semi-transmissive film. In other words, even if the film material is the same as the chrome nitride film, even if the film material is the same, the film composition is adjusted, the manufacturing conditions, the selection and control of the manufacturing device, and the control of the film quality (by the above parameters). The difference is equal to the case where the predetermined condition is satisfied and the predetermined condition is not satisfied.

(iii) The semi-transmissive film for the gray-scale mask of the MoSi system is wider than the wavelength band including the cross-i line to the g-line, compared to the chrome oxide film-translucent film. In the wavelength band, the tilt of the substantially split transmittance line is also moderate and flat. However, in order to achieve high quality of the mask base and the FPD itself, or to easily manufacture a more uniform product (a product having a strict specification), it is possible to achieve a related purpose regardless of the MoSi-based semi-transmissive film. It is also necessary to find and use a MoSi-based semi-transmissive film which satisfies predetermined conditions for achieving the relevant purpose. In other words, even if the film material is the same, even if the film material is the same, the film composition is adjusted, the manufacturing conditions, the selection and control of the manufacturing device, and the control of the film quality (by the above parameters) are different. There are cases where the predetermined condition is satisfied and the predetermined condition is not satisfied. The MoSi-based semi-transmissive film which satisfies the predetermined conditions and achieves the above object is suitably a semi-transmissive film such as MoSi 4 or MoSi 2 . Further, with respect to the MoSi 4 semi-transmissive film, the MoSi 2 semi-transmissive film is compared in the wavelength range including the i-line to the g-line in comparison with the scale of the horizontal axis being the same. The inclination of the spectral transmittance line in the wider wavelength band becomes flatter, which is not preferable.

The method of the present invention has the following constitution.

(Configuration 1) A reticle substrate for fabricating an FPD device, which is a FPD device having at least a semi-transmissive film for a gray scale mask on a light-transmitting substrate, wherein the gray-scale reticle has a function of adjusting the amount of transmission The semi-transmissive film for the gray scale mask is a transmittance of the semi-transmissive film in a wavelength band spanning at least the i-line to the g-line radiated by the ultra-high pressure mercury lamp (ie, The variation of the semi-transmission rate is controlled within the range of 5% or less. membrane.

(Configuration 2) A reticle substrate for fabricating an FPD device, which is a FPD device having at least a semi-transmissive film for a gray scale reticle on a light-transmissive substrate, wherein the gray-scale reticle has a function of adjusting the amount of transmission The semi-transmissive film for the gray scale mask is characterized in that the variation range of the transmittance (ie, the half transmittance) of the semi-transmissive film is controlled in a wavelength band spanning from 330 nm to 470 nm. A film in the range of 10% or less.

(Construction 3) The photomask substrate for fabricating an FPD device according to the second aspect, wherein the semi-transmissive film for the gray scale mask is a semi-transparent property in a wavelength band spanning from 330 nm to 470 nm. The fluctuation range of the transmittance (ie, the half transmittance) of the film is controlled to a film of a range of 5% or less.

(Attachment 4) The reticle substrate for fabricating an FPD device according to any one of 1 to 3, wherein the semi-transmissive film for the gray scale reticle is a film which must satisfy the above requirements and is optically designed. A semi-translucent film of a chromium nitride film.

(Claim 5) The reticle substrate for manufacturing an FPD device according to any one of Embodiments 1 to 3, wherein the semi-transmissive film for the gray scale reticle is one which must satisfy the above requirements and is optically designed. A semi-translucent film of MoSi type.

(Configuration 6) A reticle substrate having at least a semi-transmissive film on a light-transmitting substrate, wherein the semi-transmissive film has a function of adjusting a transmittance; and the reticle substrate is a semi-transmissive film After being patterned to become a mask, the exposure of the component is performed by including a plurality of wavelengths. a reticle substrate for a photomask that is exposed to light; wherein the semi-transmissive film is a semi-transmissive light in a wavelength band spanning at least the i-line to the g-line radiated by the ultra-high pressure mercury lamp The fluctuation range of the transmittance (that is, the half transmittance) of the film is controlled to a film of a range of 5% or less.

(Configuration 7) A photomask for manufacturing an FPD device manufactured by using the photomask substrate according to any one of 1 to 5, and having at least a semi-transmissive film for a gray scale mask.

(Configuration 8) A photomask manufactured by using the photomask substrate of the configuration 6.

According to the present invention, it is possible to provide a large reticle and a reticle substrate for FPD suitable for multicolor wave exposure.

Hereinafter, the present invention will be described in more detail.

In the reticle substrate and the reticle of the present invention for manufacturing an FPD device, the semi-transmissive film for the gray scale reticle is a wavelength band spanning at least the i-line to the g-line radiated by the ultrahigh pressure mercury lamp. The film is controlled to have a variation range of the transmittance (semi-transmissivity) of the semi-transmissive film in a range of 5% or less, whereby the gray-scale mask for the i-line, the h-line, and the g-line is semi-transparent. The transmittance (i.e., the half transmittance) of the film is almost independent of the wavelength (for example, the difference in transmittance (i.e., half transmittance) of the semi-transmissive film is less than 5%) (constitution 1).

In the present invention, the light transmissive film for a gray scale mask which satisfies the above requirements is selected and controlled in consideration of adjustment of film composition, manufacturing conditions, manufacturing apparatus, etc., in addition to selecting a film material which satisfies the above requirements. And after confirming that the above requirements are satisfied by the control of the film quality (by the above parameters) And get it. Even if the film materials are the same, there are problems in that the above requirements and the above-mentioned requirements are satisfied because of differences in film composition adjustment, manufacturing conditions, selection and control of manufacturing apparatuses, control of film quality (by the above parameters), and the like.

In the present invention, the semi-transmissive film for the gray scale mask is a permeation film for a transmissive film in a wavelength band spanning at least the i-line to the g-line radiated by the ultrahigh pressure mercury lamp under the above-described conditions. The rate of change (that is, the half transmittance) is less than 5%, and the transmittance (that is, the half transmittance) of the semi-transmissive film of the i-line, the h-line, and the g-line is almost equal to the wavelength and is almost equal. Optically designed and fabricated film.

In the reticle substrate and the reticle for manufacturing the FPD device of the present invention, preferably, the gray ray mask is a semi-transmissive film which is semi-transparent in a wavelength band spanning from 330 nm to 470 nm. The fluctuation range of the transmittance (that is, the semi-transmission rate) of the film is controlled to a film of 10% or less (constitution 2).

The film may be, for example, a MoSix (X>2) film (for example, a MoSi3 film or a MoSi 4 film, etc.).

In addition, in the reticle substrate and the reticle for manufacturing the FPD device of the present invention, preferably, the semi-transmissive film for the gray-scale reticle is a half-wavelength region spanning from 330 nm to 470 nm. The fluctuation range of the transmittance (that is, the half transmittance) of the light-transmitting film is controlled to a film of a range of 5% or less (constitution 3).

The film may be, for example, a CrN film or a MoSi 2 film; or a metal film such as Ta, Ti, W, Mo, or Zr, or an alloy film of the above metals or an alloy of the above metal and other metals. The film (in other metals, may be Cr, Ni), a film containing the above metal or alloy and ruthenium.

Photomask substrate and reticle for manufacturing FPD device of the present invention The method includes at least a semi-transmissive film for a gray scale mask and a light-shielding film on the light-transmitting substrate in a different order. In other words, the semi-translucent film system includes a state in which the exposure wavelength is blocked to form a light-shielding film for individual purposes. Specifically, for example, as shown in FIG. 3 (1), the semi-transmissive film 11 and the light-shielding film 12 for the gray scale mask are sequentially formed on the light-transmitting substrate 10, and the film is patterned. a process of forming a semi-transmissive film pattern and a light-shielding film pattern for a gray scale mask to form a semi-transmissive film underlying; or, as shown in FIG. 3 (2), sequentially on the light-transmitting substrate Forming a light-shielding film and a semi-transmissive film for a gray scale mask, and applying a patterning process to the film to form a light-shielding film pattern and a semi-transmissive film pattern for a gray scale mask to form a semi-transparent film The form of the upper membrane.

Here, the material of the light semi-transmissive film is not limited to a MoSi-based material composed of Mo and Si, and may be metal and germanium (MSi, M: Mo, Ni, W, Zr, Ti, Cr, etc.) Transition metal), oxynitride metal and lanthanum (MSiON), oxidized carbonized metal and lanthanum (MSiCO), oxynitride carbonized metal and lanthanum (MSiCON), oxidized metal and lanthanum (MSiO), nitrided metal And 矽 (MSiN), etc.; or a metal film such as Ta, Ti, W, Mo, or Zr, or an alloy film of the above metals or an alloy film of the above metal and other metals (other metals may be Cr, Ni), a material containing the above metal or alloy and tantalum.

Further, the material of the light-shielding film may be, for example, a material different from the etching property of the light semi-transmissive film, and in the case where the metal constituting the semi-transmissive film is Mo, it is preferably chromium. a chromium oxide, a chromium nitride, a chromium carbide, a chromium fluoride, or a material containing at least one of the above; and similarly, when the semi-transmissive film is a chromium nitride film-based material, Preferred is Chromium, chromium oxide, chromium carbide, chromium fluoride, and at least one of the above materials.

In the reticle substrate and the reticle for manufacturing the FPD device of the present invention, preferably, the semi-transmissive film for the gray scale reticle is a chromium nitride film which must be optically designed to satisfy the above requirements. A semi-translucent film. (Construction 4).

Further, in the reticle substrate and the photomask for manufacturing the FPD device of the present invention, preferably, the semi-transmissive film for the gray scale reticle is a MoSi system which must satisfy the above requirements and is optically designed. Semi-translucent film. (Constituent 5).

The reason for this is that the above materials are more easily satisfied by the adjustment of the film composition, the manufacturing conditions, the selection and control of the manufacturing apparatus, the control of the film quality (by the above parameters), etc., compared with other materials. The reason for the requirements.

The semi-translucent film for a gray scale mask of a chromium nitride film system is suitable for the semi-transmissive film topping form shown in Fig. 3 (2). Further, the semi-translucent film for a gray-scale photomask of the MoSi type is suitable for the semi-transmissive film underlying form shown in Fig. 3 (1).

In the reticle base and the reticle for manufacturing the FPD device of the present invention, the transmittance (ie, the semi-transmission rate) of the semi-transmissive film for the gray-scale reticle is selected as a target within a range of 15 to 65%. The value, and the transmittance of the semi-transmissive film (i.e., the half transmittance) of the target value is obtained by the film thickness control.

In the present invention, the ultrahigh pressure mercury lamp is described by taking, for example, the characteristics shown in Fig. 1, but the present invention is not limited thereto.

In addition, in the case of a light-transmitting substrate, it may be synthetic quartz or sul A substrate such as sodalime glass or alkali-free glass.

In the present invention, the reticle substrate and the reticle for manufacturing the FPD device may be a reticle substrate and a reticle for manufacturing an FPD device such as an LCD (Liquid Crystal Display), a plasma display, or an organic EL display.

Here, in the case of a photomask for LCD manufacturing, all of the photomasks required for the manufacture of the LCD include, for example, formation of a TFT (thin film transistor), particularly a TFT channel portion or a contact hole portion, a low temperature polysilicon TFT, and color. Filter, reflector (black matrix), etc. Other photomasks for manufacturing display elements include all photomasks required for the manufacture of organic EL displays, plasma displays, and the like.

A reticle for manufacturing an FPD device is manufactured using the reticle substrate of the present invention for manufacturing an FPD device, and has at least a semi-transmissive film for a gray scale reticle (constitution 6).

The reticle substrate of the present invention has at least a semi-transmissive film on the light-transmitting substrate, wherein the semi-transmissive film has a function of adjusting the amount of transmission; and the reticle substrate is patterned by the semi-transmissive film. a mask base for a photomask that is subjected to exposure processing by exposing a plurality of wavelengths of exposure light after being processed as a mask; characterized in that the semi-transmissive film is a type The film of the range of the transmittance of the semi-transmissive film in the wavelength band of at least the i-line to the g-line of the high-pressure mercury lamp is controlled to a range of 5% or less (constitution 6).

The transmittance of the semi-transmissive film for the gray-scale mask of the photomask base of the present invention with respect to the i-line, the h-line, and the g-line (that is, the semi-transmission rate) is almost independent of the wavelength (for example, semi-transparent). The difference between the transmittance (ie, the half transmittance) of the photo film The difference is less than 5%), whereby the reticle substrate and the reticle suitable for multi-color wave exposure can be provided.

In the above configuration, even when the manufacturing conditions (film formation conditions) in the film formation of the semi-transmissive film fluctuate, the spectral transmittance (transmittance of each wavelength) changes little, and the specification can be improved. The yield of the reticle substrate or reticle. Further, in the film thus controlled, the spectral transmittance (transmittance of each wavelength) is largely changed with respect to the shift in the upper and lower directions of the spectral transmittance curve which varies with the process, and the spectral transmittance (transmission of each wavelength) Rate) The homogeneity is good.

Further, the reticle base and the reticle of the present invention are suitable as a reticle base and a reticle corresponding to the exposure machine of the double exposure processing.

Further, the mask base and the mask of the present invention are suitable as a mask base and a mask corresponding to an exposure apparatus in which the illumination optical system is a reflective optical type.

Further, the mask base and the mask of the present invention are suitable as a large-sized mask having a rectangular shape of 330 nm × 450 nm or more, and a large-sized mask base corresponding to the mask. The use of the large-sized photomask may be a photomask for manufacturing a display element, for example, a photomask for manufacturing an FPD device.

Additionally, the present invention is suitable as a reticle substrate corresponding to a gray scale reticle.

The photomask of the present invention is produced by using the above-described photomask substrate of the present invention, and has at least a semi-transmissive film pattern (construction 8).

Other matters relating to the reticle base and the reticle (the constituting 6 and the struct 8) of the present invention are the reticle base and the reticle of the present invention (constituting 1 to 5 and The items described in Structure 7) are the same.

1‧‧‧Lighting Department

2‧‧‧Transmission Department

3‧‧‧ Grayscale Department

3a‧‧‧Micro shading pattern

3b‧‧‧Micro-transmission department

3a'‧‧‧ semi-transmissive film

10‧‧‧Transmissive substrate

11‧‧‧ Semi-transmissive film

12‧‧‧ opaque film

[Fig. 1] Schematic diagram of the spectral distribution of an ultrahigh pressure mercury lamp as an exposure light source.

Fig. 2 is a schematic view showing the spectral transmittance of a semi-transmissive film produced in Example 1.

3 (1) and (2) are views for explaining a state of a photomask.

Fig. 4 is a schematic view showing the spectral transmittance of a semi-transmissive film produced in Example 2.

Fig. 5 is a view showing the spectral transmittance of the other semi-transmissive film produced in Example 2.

Fig. 6 is a view showing the spectral transmittance of the other semi-transmissive film produced in Example 2.

Fig. 7 (1) and (2) are views for explaining the behavior of the spectral transmittance line of the semi-translucent film.

8] (1) and (2) are views for explaining the behavior of the spectral transmittance line of the semi-translucent film.

[Fig. 9] (1) and (2) are explanatory views for explaining a gray scale mask having a semi-translucent film; (1) is a partial plan view; (2) is a partial sectional view.

[Fig. 10] (1) and (2) are diagrams for explaining a gray scale mask having a fine light-shielding pattern having a resolution limit or less; (1) is a partial plan view; (2) is a partial cross-sectional view.

Fig. 11 is a view showing the spectral transmittance of the semi-transmissive film formed in Example 4 across the wavelength band from the i-line to the g-line.

[Fig. 12] The semi-transmissive film formed in Example 4 is located at a wavelength Schematic diagram of the spectral transmittance of the wavelength band between 200 nm and 800 nm.

Fig. 13 is a view showing the spectral transmittance of the semi-transmissive film formed in Example 5 across the wavelength band from the i-line to the g-line.

Fig. 14 is a view showing the spectral transmittance of a semi-transmissive film produced in Example 5 in a wavelength band between 200 nm and 800 nm.

Fig. 15 is a view showing the spectral transmittance of the semi-transmissive film formed in Example 6 across the wavelength band from the i-line to the g-line.

Fig. 16 is a view showing the spectral transmittance of a semi-transmissive film formed in Example 6 in a wavelength band having a wavelength between 200 nm and 800 nm.

Fig. 17 is a view showing the spectral transmittance of the semi-transmissive film formed in Example 7 across the wavelength band from the i-line to the g-line.

Fig. 18 is a view showing the spectral transmittance of a semi-transmissive film produced in Example 7 in a wavelength band between 200 nm and 800 nm.

Fig. 19 is a view showing the spectral transmittance of the semi-transmissive film formed in Example 8 across the wavelength band from the i-line to the g-line.

20 is a schematic view showing the spectral transmittance of a semi-transmissive film produced in Example 8 in a wavelength band between 200 nm and 800 nm.

Fig. 21 is a view showing the spectral transmittance of a semi-transmissive film formed in Example 9 across a wavelength band from the i-line to the g-line.

Fig. 22 is a schematic view showing the spectral transmittance of a semi-transmissive film produced in Example 9 in a wavelength band between 200 nm and 800 nm.

Fig. 23 is a view showing the spectral transmittance of the semi-transmissive film produced in Comparative Example 2 across the wavelength band from the i-line to the g-line.

[Fig. 24] The semi-transmissive film produced in Comparative Example 2 is located at a wavelength Schematic diagram of the spectral transmittance of the wavelength band between 200 nm and 800 nm.

Hereinafter, the present invention will be described in further detail based on examples.

(Example 1)

A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, the Cr target was used to change the CrN semi-transmissive film to 100 angstroms (sample 1), 80 angstroms (sample 2), and 50 angstroms (sample 3) using Ar and N 2 gas as a sputtering gas. ), 30 angstroms (sample 4) to make a plurality of samples.

The split light transmittance line of the sample 2 is as shown in FIG. 2A; the split light transmittance line of the sample 3 is as shown in FIG. The D system shows the spectral transmittance of QZ. The spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

The split light transmittance line A of the sample 2 shown in FIG. 2 and the split light transmittance line B of the sample 3 are semi-translucent film in a wavelength band spanning at least the i-line to the g-line radiated by the ultrahigh pressure mercury lamp. The variation in transmittance (ie, semi-transmission rate) is within 5%.

Further, regarding the spectral transmittance line A of the sample 2 shown in FIG. 2 and the spectral transmittance line B of the sample 3, the transmittance of the semi-transmissive film is in the wavelength band spanning the wavelength of 330 nm to 470 nm (ie, The half-transmission rate is also within the range of less than 5%.

When the inner faces of a plurality of (between the substrates: 100) are inspected in the same manner (the average position is 9 positions), the transmittance of the semi-transmissive film is known. Within the range of the range of variation (ie, semi-transmission rate).

Further, it can be confirmed that the film thickness of the CrN semi-transmissive film is in the range of 20 to 250 angstroms, and any film produced by setting an arbitrary film thickness is located at the transmittance of the semi-transmissive film (that is, the half transmittance). Within the range of the extent of the change.

(Comparative Example 1)

A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, the Cr target was used to change the CrO semi-transmissive film to 100 angstroms (sample 1'), 250 angstroms (sample 2'), and 400 angstroms by using Ar and O 2 gas as a sputtering gas. 3'), 500 angstroms (sample 4') to make a plurality of samples.

Here, the spectral transmittance line of the sample 3' is as shown in Fig. 2C.

Regarding the spectral transmittance line C of the sample 3' shown in Fig. 2, the transmittance of the semi-transmissive film (i.e., the half transmittance) is at least across the wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp. The change range is 6% or more.

Further, regarding the spectral transmittance line C of the sample 3' shown in Fig. 2, the transmittance of the semi-transmissive film (i.e., the half transmittance) is varied in the wavelength band spanning the wavelength of 330 nm to 470 nm. 12% or more.

When the inner faces of a plurality of (between the substrates: 100) are inspected in the same manner (the average position is 9 positions), it can be known that the light transmittance transmission line C is shifted upward and downward by a small number of process variations, so that the translucency is semi-transparent. The variation in the transmittance (ie, the half transmittance) of the film is increased by about 2 to 3%.

Further, it was confirmed that any film produced by setting an arbitrary film thickness is located in a range in which the film thickness of the CrO semi-transmissive film is in the range of 100 to 500 Å. The range of variation of the transmittance (i.e., the half transmittance) of the semi-transmissive film of Example 1 was outside the range.

(Production of substrate and mask)

A large-sized glass substrate (synthesized quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a Cr-based light-shielding film (making a photomask base) using a large-line sputtering apparatus, and a patterning process of the Cr-based light-shielding film was performed. Here, the Cr-based light-shielding film is formed by using a Cr target, and an Ar and CH 4 gas is used as a sputtering gas to form a 620-570 angstrom CrC film.

Next, the gray scale mask was formed into a film (making a mask base) in the same manner as in the above-described Example 1 and Comparative Example 1, and the semi-transmissive film for the gray scale mask was patterned.

As described above, a large-sized photomask for FPD having a semi-transmissive film topping type as shown in Fig. 3 (2) was produced.

As a result, in the case of using the semi-transmissive film for the gray scale mask, it was confirmed that the use of the film of Example 1 is more advantageous for the quality of the mask and the productivity, etc., than when the film of Comparative Example 1 is used. .

(Example 2)

A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, a semi-transparent color of a gray scale mask composed of Mo and yttrium is changed stepwise using a target of Mo:Si=20:80 (atomic% ratio) using Ar and He gases as sputtering gases. The film (MoSi 4 ) was 100 angstroms (sample 5), 50 angstroms (test 6), and 30 angstroms (sample 7) to prepare a plurality of samples.

The light transmittance line of sample 5 is shown in Figure 4; The over-rate line is shown in Figure 5; the split-light transmission line of sample 7 is shown in Figure 6. The spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

The variation range of the transmittance (ie, the half transmittance) of the semi-transmissive film is at least in the range of the wavelength range from the i-line to the g-line radiated by the ultra-high pressure mercury lamp, as follows: Sample 5 is in the range of less than 3.9%. Inside; sample 6 is in the range of less than 4.6%; sample 7 is in the range of less than 3.1%.

Further, in the wavelength band spanning the wavelength of 330 nm to 470 nm, the transmittance of the semi-transmissive film (i.e., the half transmittance) is as follows: sample 5 is in the range of less than 6.0%; sample 6 is not Within the range of 8.5%; sample 7 is within the range of 5.8%.

When inspecting the inner faces of a plurality of (inter-substrates: 100) in the same manner, it is known that all of them are within the range of the variation range of the transmittance (that is, the half transmittance) of the semi-transmissive film. .

Further, it has been confirmed that the film thickness of the MoSi 4 film is in the range of 20 to 250 angstroms, and the transmittance of the semi-transmissive film (that is, the half transmittance) of the film system formed by setting the film thickness of any film thickness is located in the sample 6 Within the scope below.

(Example 3)

Compared with the second embodiment described above, the semi-transparency of the gray scale mask for a plurality of transmittances is the same as that of the second embodiment except that Mo:Si=1:2 (atomic% ratio) is different. Film formation.

As a result, it was found that the film formed by setting an arbitrary film thickness in the range of the film thickness of the MoSi 2 film of 15 to 200 angstroms is one of the semi-transmissive films in the wavelength band across the i-line to the g-line. The transmittance (ie, the half transmittance) varies by less than 4%.

As can be seen from the results of Examples 2 and 3, when the scales on the horizontal axis are the same, the MoSi 2 semi-transmissive film is more included in the i-line to g than the MoSi 4 semi-translucent film. It is preferable that the wavelength band of the line has a wider slope in the wavelength band of the light-transmitting transmittance line.

(Production of substrate and mask)

A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) is used to form a semi-transmissive film for a gray-scale mask of a MoSi system and a Cr-based light-shielding film by using a large-scale on-line sputtering apparatus. The FPD uses a large reticle base.

Here, the film formation system of the semi-translucent film for the gray scale mask of the MoSi system is the same as that of the above-described second or third embodiment.

In addition, the film formation of the Cr-based light-shielding film is performed by separately arranging a Cr target in three spaces (sputtering chambers) continuously arranged in the large-scale on-line sputtering apparatus, and firstly forming a film by Ar and N 2 gas. A CrN film of 150 Å was formed by a gas; then, a CrC film of 650 Å was formed by using Ar and CH 4 gas as a sputtering gas; and then a CrON film of 250 Å was formed by using Ar and NO gas as a sputtering gas.

After the patterning process of the Cr-based light-shielding film is performed, a patterning process of the semi-transmissive film for the MoSi-based gray scale mask is performed to produce a semi-transmissive film underlying form as shown in FIG. 3 (1). Large reticle for FPD.

As a result, in the case of using the semi-transmissive film for the gray scale mask, it was confirmed that the film of the examples 2 and 3 was used more preferably than the film of the comparative example 1, and the quality of the mask was improved and the yield was improved. Rate and so on.

(Example 4)

For large glass substrates (synthetic quartz (QZ) 10mm thick, size 850 mm × 1200 mm) A large-line on-line sputtering apparatus was used to form a film of a semi-transparent film for a gray scale mask. Specifically, a Ta target material is used, and a semi-transmissive film for a gray scale mask composed of Ta is formed under a film thickness using Ar gas as a sputtering gas to prepare a plurality of samples, wherein The transmittance (i.e., the half transmittance) of the semi-transmissive film formed by the film at least across the wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp is about 60% (sample T-4) ), about 40% (sample T-5), about 20% (sample T-6).

With respect to each of the above samples, the spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

The spectral transmittance line of each of the above samples is shown in Fig. 11 across the wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp.

The variation of the transmittance (ie, the half transmittance) of the semi-transmissive film across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp is as follows: the sample T-4 is in the range of less than 0.4%. The sample T-5 was in the range of less than 0.2%; the sample T-6 was almost flat in the range of less than 0.4%.

Further, the spectral transmittance line of each of the above-mentioned samples located in a wavelength band spanning the wavelength of 200 nm to 800 nm is as shown in FIG.

In the wavelength band spanning the wavelength of 330 nm to 470 nm, the transmittance of the semi-transmissive film of each of the above samples (i.e., the half transmittance) is within a range of less than 2.0%.

When inspecting the inner faces of a plurality of (inter-substrates: 100) in the same manner, it is known that all of them are within the range of the variation range of the transmittance (that is, the half transmittance) of the semi-transmissive film. .

Moreover, it can be confirmed that the semi-transmissive film (Ta) after film formation The transmittance (ie, the half transmittance) is in the range of about 20% to about 60% of the film thickness, and the transmittance (ie, the half transmittance) of any semi-transmissive film of the film system produced by setting the film thickness is set. The range of variation is within the range of sample T-4.

(Example 5)

A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, a Ti target is used, and a semi-transmissive film (Ti) for a gray scale mask composed of Ti is formed under a film thickness using Ar gas as a sputtering gas to prepare a plurality of samples. The transmittance (ie, the half transmittance) of the semi-transmissive film formed by forming the film at least across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp is about 60% (sample) T-8), about 40% (sample T-9), about 20% (sample T-10).

With respect to each of the above samples, the spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

The spectral transmittance line of each of the above samples is shown in Fig. 13 across the wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp.

The variation in transmittance (ie, semi-transmission) of the semi-transmissive film across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp is as follows: sample T-8 is less than 1.7%. Within the range; sample T-9 is in the range of less than 1.5%; sample T-10 is substantially flat within the range of less than 0.3%.

Further, the spectral transmittance line of each of the above-mentioned samples located in a wavelength band spanning the wavelength of 200 nm to 800 nm is as shown in FIG.

In the wavelength band spanning the wavelength of 330 nm to 470 nm, the transmittances of the semi-transmissive films of the above samples (ie, the half transmittance) are respectively varied. Within the range of less than 5.0%. However, as shown in FIG. 14 , when the transmittance increases on the short-wavelength side, the peak in which the transmittance increases as the transmittance increases (the film thickness becomes thinner) moves toward the long wavelength, and is located across the i-line to the g. The variation range of the transmittance (i.e., the half transmittance) of the semi-transmissive film in the wavelength band of the line tends to increase.

When inspecting the inner faces of a plurality of (inter-substrates: 100) in the same manner, it is known that all of them are within the range of the variation range of the transmittance (that is, the half transmittance) of the semi-transmissive film. .

Further, it was confirmed that the transmittance (i.e., the half transmittance) of the semi-transmissive film (Ti) after film formation is in the range of about 20% to about 60% of the film thickness, and the film thickness is set to any thickness. The range of variation of the transmittance (i.e., the half transmittance) of any of the above-mentioned semi-transmissive films is within the range of each of the above samples.

(Example 6)

A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, a W-target is used, and a semi-transmissive film (W) for a gray scale mask composed of W is formed under a film thickness using Ar gas as a sputtering gas to prepare a plurality of samples. The transmittance (ie, the half transmittance) of the semi-transmissive film formed by forming the film at least across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp is about 60% (sample) T-11), about 40% (sample T-12), about 20% (sample T-13).

With respect to each of the above samples, the spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

The spectral transmittance line of each of the above samples is shown in Fig. 15 across the wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp.

The variation in the transmittance (ie, the half transmittance) of the semi-transmissive film across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp is as follows: the sample T-11 is less than 1.8%. Within the range of the sample T-12 is less than 1.5%; the sample T-10 is substantially flat within the range of less than 1.1%.

Further, the spectral transmittance line of each of the above-mentioned samples located in a wavelength band spanning the wavelength of 200 nm to 800 nm is as shown in FIG.

In the wavelength band spanning the wavelength of 330 nm to 470 nm, the transmittance of the semi-transmissive film of each of the above samples (i.e., the half transmittance) is within a range of less than 4.0%, but as shown in FIG. It is shown that the inclination becomes larger as moving to the longer wavelength side than in the fourth and fifth embodiments.

When inspecting the inner faces of a plurality of (inter-substrates: 100) in the same manner, it is known that all of them are within the range of the variation range of the transmittance (that is, the half transmittance) of the semi-transmissive film. .

Further, it was confirmed that the film produced by setting an arbitrary film thickness within a range of a film thickness of the semi-transmissive film (W) after film formation (that is, a semi-transmissivity) of about 20% to about 60% The fluctuation range of the transmittance (i.e., the half transmittance) of any of the semi-transmissive films is within the range of each of the above samples.

(Example 7)

A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, a Mo target is used, and a semi-transmissive film (Mo) for a gray scale mask composed of Mo is formed under a film thickness using Ar gas as a sputtering gas to prepare a plurality of samples. Forming the film into a film at least across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp The transmittance (i.e., semi-transmission ratio) of the latter semi-transmissive film was about 60% (sample T-14), about 40% (sample T-15), and about 20% (sample T-16).

With respect to each of the above samples, the spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

The spectral transmittance line of each of the above samples is shown in Fig. 17 across the wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp.

In the wavelength band across the i-line to the g-line radiated by the ultra-high pressure mercury lamp, the transmittances of the semi-transmissive film (ie, the semi-transmission rate) are as follows: sample sample T-14 is less than 2.1%. Within the range of the sample; the sample T-15 is in the range of less than 2.4%; the sample T-16 is substantially flat within the range of less than 1.8%.

Further, the spectral transmittance line of each of the above-mentioned samples located in a wavelength band spanning the wavelength of 200 nm to 800 nm is as shown in FIG.

In the wavelength band spanning the wavelength of 330 nm to 470 nm, the transmittance of the semi-transmissive film of each of the above samples (that is, the half transmittance) is within a range of less than 5.0%, but as shown in FIG. It is shown that the inclination becomes larger as it moves toward the longer wavelength side than in the sixth embodiment.

When the inner faces of a plurality of (between the substrates: 100) are inspected in the same manner, it is known that the transmittance (i.e., the half transmittance) of any of the semi-transmissive films is within each range. .

Further, it can be understood that the transmittance (i.e., the half transmittance) of the semi-transmissive film (Mo) after film formation is in the range of about 20% to about 60%, and an arbitrary film thickness is set and produced. The variation range of the transmittance (i.e., the half transmittance) of any of the semi-transmissive films in the film falls within the range of each of the above samples.

(Example 8)

A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, a target of Ti:W=1:1 (atomic% ratio) is used, and Ar gas is used as a sputtering gas to form a gray-scale mask composed of Ti and W, respectively, under a film thickness. a photo film (TiW) for producing a plurality of samples, wherein the film is formed to penetrate the semi-transmissive film after forming a film in at least a wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp. The rate (i.e., the half transmittance) was about 60% (sample T-23), about 40% (sample T-24), and about 20% (sample T-25).

With respect to each of the above samples, the spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

The spectral transmittance line of each of the above samples is shown in Fig. 19 in the wavelength band across the i-line to the g-line radiated by the ultrahigh pressure mercury lamp.

The variation of the transmittance (ie, the half transmittance) of the semi-transmissive film across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp is as follows: the sample T-23 is less than 0.26%. Within the range of the sample; the sample T-24 is in the range of less than 1.47%; the sample T-25 is almost flat within the range of less than 0.66%.

Further, the spectral transmittance line of each of the above samples in the wavelength band spanning the wavelength of 200 nm to 800 nm is as shown in FIG.

In the wavelength band spanning the wavelength of 330 nm to 470 nm, the transmittance of the semi-transmissive film of each of the above samples (i.e., the half transmittance) is within a range of less than 3.0%. However, as shown in FIG. 20, when the transmittance on the short-wavelength side increases, as the transmittance increases (the film thickness becomes thinner), the peak of the transmittance increases toward the long-wavelength measurement, and is located across the i-line to the g. Semi-transparent wavelength band The variation range of the transmittance (that is, the half transmittance) of the photo film tends to increase.

When inspecting the inner faces of a plurality of (inter-substrates: 100) in the same manner, it is known that all of them are within the range of the variation range of the transmittance (that is, the half transmittance) of the semi-transmissive film. .

In addition, it was confirmed that the film produced by setting an arbitrary film thickness within a range of a film thickness of a semi-transmissive film (TiW) after film formation (that is, a semi-transmissivity) of about 20% to about 60% The fluctuation range of the transmittance (i.e., the half transmittance) of any of the semi-transmissive films is within the range of each of the above samples.

(Example 9)

A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, a target of W:Si=1:2 (atomic% ratio) is used, and Ar gas is used as a sputtering gas, and a gray scale mask composed of W and Si is formed to be semipermeable at a film thickness. a photo film (WSi) for producing a plurality of samples, wherein the film is formed to penetrate the semi-transmissive film after forming a film in at least a wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp. The rate (i.e., the half transmittance) was about 60% (sample T-20), about 40% (sample T-21), and about 20% (sample T-22).

With respect to each of the above samples, the spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

The spectral transmittance line of each of the above samples is shown in Fig. 21 across the wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp.

In the wavelength band across the i-line to the g-line radiated by the ultra-high pressure mercury lamp, the transmittance of the semi-transmissive film (ie, the semi-transmission rate) varies as follows. Bottom: The sample T-20 is in the range of less than 2.6%; the sample T-21 is in the range of less than 2.8%; the sample T-22 is substantially flat in the range of less than 2.5%.

Further, the spectral transmittance line of each of the above-mentioned samples located in a wavelength band spanning the wavelength of 200 nm to 800 nm is as shown in FIG.

In the wavelength band across the wavelength of 330 nm to 470 nm, the transmittance of the semi-transmissive film of each of the above samples (i.e., the half transmittance) is within a range of less than 5.0%. However, as shown in FIG. 22, the inclination becomes larger as moving toward the long wavelength measurement.

When inspecting the inner faces of a plurality of (inter-substrates: 100) in the same manner, it is known that all of them are within the range of the variation range of the transmittance (that is, the half transmittance) of the semi-transmissive film. .

Further, it was confirmed that the film produced by setting an arbitrary film thickness within a range of a film thickness of the semi-transmissive film (WSi) after film formation (that is, a semi-transmissivity) of about 20% to about 60% The fluctuation range of the transmittance (i.e., the half transmittance) of any of the semi-transmissive films is within the range of each of the above samples.

(Comparative Example 2)

A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, a Si target is used, and a semi-transmissive film (Si) for a gray scale mask composed of Si is formed under a film thickness using Ar gas as a sputtering gas to prepare a plurality of samples. The transmittance (ie, the half transmittance) of the semi-transmissive film formed by forming the film at least across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp is about 60% (sample) T-17), about 40% (sample T-18), about 20% (sample T-19).

With respect to each of the above samples, the spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

The spectral transmittance line of each of the above samples is shown in Fig. 23 in the wavelength band across the i-line to the g-line radiated by the ultrahigh pressure mercury lamp.

In the wavelength band across the i-line to the g-line radiated by the ultrahigh pressure mercury lamp, the transmittances of the translucent film (ie, the half transmittance) are as follows: sample T-17: 13.0%, sample T -18: 13.4%, sample T-19: 9.7%; even when compared with Comparative Example 1, the transmittance of the semi-transmissive film (i.e., the half transmittance) was large.

Further, the spectral transmittance line of each of the above-mentioned samples located in a wavelength band spanning the wavelength of 200 nm to 800 nm is as shown in FIG.

In the wavelength range of 330 nm to 470 nm across the wavelength range, the transmittance of the semi-transmissive film of each of the above samples (i.e., the half transmittance) is about 20%, respectively, even if compared with Comparative Example 1, The transmittance of the light transmissive film (i.e., the half transmittance) is large.

Similarly, when examining the inner faces of a plurality of (between the two substrates) (equal to nine positions), it can be known that the spectral transmittance lines shown in FIG. 23 are shifted upward and downward, with little process variation, so The variation of the transmittance (ie, the half transmittance) of the semi-transmissive film is increased by about 3 to 5%.

Further, it can be seen that the transmittance (i.e., the half transmittance) of the semi-transmissive film (Si) after film formation is in the range of about 20% to about 60%, and an arbitrary film thickness is set and produced. The variation range of the transmittance (i.e., the half transmittance) of any of the semi-transmissive films in the film falls within the range of the variation of the transmittance (i.e., the half transmittance) of the semi-transmissive film of Examples 1 to 9. outer.

(Production of substrate and mask)

A large-scale glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) is used to form a semi-transmissive film for a gray scale mask and a Cr-based light-shielding film by using a large-scale on-line sputtering apparatus to produce a large FPD. Photomask base.

Here, the film formation system of the semi-transmissive film for the gray scale mask is the same as the conditions of the above-described Examples 4 to 9.

In addition, the film formation of the Cr-based light-shielding film is performed by separately arranging a Cr target in three spaces (sputtering chambers) continuously arranged in the large-scale on-line sputtering apparatus, and firstly forming a film by Ar and N 2 gas. A CrN film of 150 Å was formed by a gas; then, a CrC film of 650 Å was formed by using Ar and CH 4 gas as a sputtering gas; and then a CrON film of 250 Å was formed by using Ar and NO gas as a sputtering gas.

After the patterning process of the Cr-based light-shielding film is performed, a patterning process of the semi-transmissive film for the gray scale mask is performed to fabricate the FPD for the semi-transmissive film under the form shown in FIG. 3 (1). Large reticle.

As a result, in the case of using the semi-transmissive film for the gray scale mask, it was confirmed that the use of the films of Examples 4 to 9 is more advantageous for the quality of the mask than when the films of Comparative Examples 1 to 2 are used. Improve productivity and so on.

Hereinabove, the present invention has been described while exposing the preferred embodiments, but the present invention is not limited to the above embodiments.

Claims (13)

  1. A reticle substrate for manufacturing a flat panel display (FPD) device for fabricating a flat display device having at least a semi-transmissive film on a light-transmissive substrate, wherein the semi-transmissive film has a function of adjusting a transmittance, the light The cover substrate is a reticle substrate for a reticle that is subjected to exposure processing by a plurality of wavelengths of exposure light after the patterning process of the semi-transmissive film is formed into a reticle, and is characterized by: The semi-translucent film is a film that controls a variation range of a transmittance in a wavelength band spanning at least an i-line to a g-line to a range of 5% or less, and a transmittance of the semi-transmissive film. The vertical axis, the spectral transmittance line having the wavelength on the horizontal axis, is inclined upward in the wavelength band from the i-axis to the g-line in the wavelength band from the i-ray to the g-line, and the semi-transmissive film is raised toward the upper right side. The film thickness is 15 to 250 angstroms.
  2. The photomask substrate for manufacturing a flat panel display device according to claim 1, wherein the semi-transmissive film is made of metal and germanium (MSi), oxynitride metal and germanium (MSiON), and oxidized carbonized. Metal and cerium (MSiCO), carbonitride carbonitized metal and cerium (MSiCON), oxidized metal and cerium (MSiO) or nitrided metal and cerium (MSiN) film, of which M: Mo, Ni, W, Zr, Ti, Cr.
  3. The photomask substrate for manufacturing a flat panel display device according to claim 2, wherein the semi-transmissive film is provided with a light-shielding film containing chromium, chromium oxide, and chromium. A material consisting of nitride, chromium carbide or chromium fluoride.
  4. The photomask substrate for manufacturing a flat panel display device according to claim 1, wherein the semi-transmissive film is made of molybdenum and hafnium (MoSi), zirconia molybdenum and niobium (MoSiON), and oxidized carbonized. A film composed of molybdenum and niobium (MoSiCO), oxidized and nitrided molybdenum and niobium (MoSiCON), oxidized molybdenum and niobium (MoSiO) or nitrided molybdenum and niobium (MoSiN).
  5. The photomask substrate for manufacturing a flat panel display device according to claim 4, wherein the semi-transmissive film is provided with a light-shielding film containing chromium, chromium oxide, and chromium. A material consisting of nitride, chromium carbide or chromium fluoride.
  6. The photomask substrate for manufacturing a flat panel display device according to claim 1, wherein the semi-transmissive film is a film composed of a metal selected from the group consisting of CrN film, Ta, Ti, W, Mo or Zr, An alloy film composed of two or more metals selected from the group consisting of Ta, Ti, W, Mo, and Zr, an alloy film composed of a metal selected from the group consisting of Ta, Ti, W, Mo, or Zr and Cr or Ni, composed of Ta and Si A film or a film composed of an alloy of two or more metals selected from the group consisting of Ta, Ti, W, Mo, and Zr and Si.
  7. A reticle substrate for manufacturing a flat panel display device, wherein a transmissive substrate has a flat display device having at least a semi-transmissive film, wherein the semi-transmissive film has a function of adjusting a transmittance, and the reticle substrate is A reticle substrate for a reticle that is subjected to exposure processing by patterning a translucent film to form a reticle and then exposing the light to a plurality of wavelengths at the time of manufacturing the element; The photo film is a range in which the variation range of the transmittance of the semi-transmissive film is controlled to 10% or less in a wavelength band spanning from 330 nm to 470 nm. The film has a transmittance of the semi-transmissive film on the vertical axis and a wavelength on the horizontal axis as a spectral transmittance line in a wavelength band spanning a wavelength of 330 nm to 470 nm, and a cross-section of the spectral transmittance line. The axis is inclined upward to the upper right, and the film thickness of the semi-transmissive film is 15 to 250 angstroms.
  8. The photomask substrate for manufacturing a flat panel display device according to claim 7, wherein the semi-transmissive film is made of metal and germanium (MSi), oxynitride metal and germanium (MSiON), and oxidized carbonized. Metal and cerium (MSiCO), carbonitride carbonitized metal and cerium (MSiCON), oxidized metal and cerium (MSiO) or nitrided metal and cerium (MSiN) film, of which M: Mo, Ni, W, Zr, Ti, Cr.
  9. The photomask substrate for manufacturing a flat panel display device according to claim 8, wherein the semi-transmissive film is provided with a light-shielding film containing chromium, chromium oxide, and chromium. A material consisting of nitride, chromium carbide or chromium fluoride.
  10. The photomask substrate for manufacturing a flat panel display device according to claim 7, wherein the semi-transmissive film is made of molybdenum and niobium (MoSi), zirconia molybdenum and niobium (MoSiON), and oxidized carbonized. A film composed of molybdenum and niobium (MoSiCO), oxidized and nitrided molybdenum and niobium (MoSiCON), oxidized molybdenum and niobium (MoSiO) or nitrided molybdenum and niobium (MoSiN).
  11. The photomask substrate for manufacturing a flat panel display device according to claim 10, wherein the semi-transmissive film is provided with a light-shielding film containing chromium, chromium oxide, and chromium. A material consisting of nitride, chromium carbide or chromium fluoride.
  12. The photomask substrate for manufacturing a flat panel display device according to claim 7, wherein the semi-transmissive film is a film composed of a metal selected from the group consisting of CrN film, Ta, Ti, W, Mo or Zr, An alloy film composed of two or more metals selected from the group consisting of Ta, Ti, W, Mo, and Zr, an alloy film composed of a metal selected from the group consisting of Ta, Ti, W, Mo, or Zr and Cr or Ni, composed of Ta and Si A film or a film composed of an alloy of two or more metals selected from the group consisting of Ta, Ti, W, Mo, and Zr and Si.
  13. A reticle for manufacturing a flat-panel display device, which is manufactured using the reticle substrate of any one of claims 1 to 12, and having at least a pattern of a semi-translucent film.
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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008052120A (en) * 2006-08-25 2008-03-06 Hoya Corp Mask blank, photomask, and method for manufacturing same
JP5407125B2 (en) * 2007-08-29 2014-02-05 大日本印刷株式会社 Gradation mask
JP4934236B2 (en) * 2007-09-29 2012-05-16 Hoya株式会社 Gray tone mask blank, gray tone mask manufacturing method, gray tone mask, and pattern transfer method
JP2009086383A (en) * 2007-09-29 2009-04-23 Hoya Corp Gray tone mask, pattern transfer method and gray tone mask blank
JP4934237B2 (en) * 2007-09-29 2012-05-16 Hoya株式会社 Gray-tone mask manufacturing method, gray-tone mask, and pattern transfer method
JP5097528B2 (en) * 2007-12-18 2012-12-12 Hoya株式会社 Multi-tone photomask
JP5336226B2 (en) * 2008-02-26 2013-11-06 Hoya株式会社 Multi-tone photomask manufacturing method
JP5215019B2 (en) * 2008-03-28 2013-06-19 Hoya株式会社 Multi-tone photomask, manufacturing method thereof, and pattern transfer method
JP2010044149A (en) * 2008-08-11 2010-02-25 Hoya Corp Multi-gradation photomask, pattern transfer method, and manufacturing method of display unit using multi-gradation photomask
JP5121020B2 (en) * 2008-09-26 2013-01-16 Hoya株式会社 Multi-tone photomask, photomask blank, and pattern transfer method
WO2010150355A1 (en) * 2009-06-23 2010-12-29 Hoya株式会社 Multilevel gradation photomask
JP2019090911A (en) 2017-11-14 2019-06-13 アルバック成膜株式会社 Mask blank, half tone mask and method for manufacturing same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1026820A (en) * 1996-07-11 1998-01-27 Toppan Printing Co Ltd Halftone phase shift mask blank, and halftone phase shift mask
JP2005037933A (en) * 2003-06-30 2005-02-10 Hoya Corp Method for manufacturing gray tone mask and gray tone mask

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01214859A (en) * 1988-02-24 1989-08-29 Hitachi Ltd Mask
DE69421109D1 (en) * 1993-04-09 1999-11-18 Dainippon Printing Co Ltd Halbtonphasenverschiebungsphotomaske, Blankohalbtonphasenverschiebungsmaske, and methods for producing such photomasks
JP3262302B2 (en) * 1993-04-09 2002-03-04 三菱電機株式会社 Phase shift photomask, blanks for phase shift photomask and a process for their preparation
DE69423686T2 (en) * 1993-08-17 2000-07-27 Dainippon Printing Co Ltd Halbtonphasenverschiebungsphotomaske, Blankohalbtonphasenverschiebungsmaske and process for preparing the mask blank
TW358170B (en) * 1997-06-10 1999-05-11 Taiwan Semiconductor Mfg Co Ltd Semi-transparent phase shift mask structure and the manufacturing method
JPH11125896A (en) * 1997-08-19 1999-05-11 Toppan Printing Co Ltd Photomask blank and photomask
TW479159B (en) * 2001-02-09 2002-03-11 Nanya Technology Corp Interlacing phase shift mask and its manufacturing method
JP2003029393A (en) * 2001-07-12 2003-01-29 Matsushita Electric Ind Co Ltd Mask, pattern forming method using the same, and lithography
JP2003195483A (en) * 2001-12-28 2003-07-09 Hoya Corp Photomask blank, photomask and method for manufacturing the same
JP2003322947A (en) * 2002-04-26 2003-11-14 Hoya Corp Halftone phase shifting mask blank and halftone phase shifting mask
GB0215243D0 (en) * 2002-07-02 2002-08-14 Koninkl Philips Electronics Nv Mask and manufacturing method using mask
JP2004177683A (en) * 2002-11-27 2004-06-24 Clariant (Japan) Kk Method for forming pattern by using ultrahigh heat-resistant positive photosensitive composition
KR101049624B1 (en) * 2003-02-03 2011-07-15 호야 가부시키가이샤 Pattern transfer method using photomask blanks, photomasks and photomasks
DE112004000591T5 (en) * 2003-04-09 2006-02-09 Hoya Corp. Production process for photomask and photomask blank
JP4385690B2 (en) * 2003-09-09 2009-12-16 凸版印刷株式会社 Exposure mask for manufacturing liquid crystal display element and method for manufacturing the same
JP4919220B2 (en) * 2005-02-28 2012-04-18 Hoya株式会社 Gray tone mask
JP4961990B2 (en) * 2005-12-14 2012-06-27 大日本印刷株式会社 Mask blank and gradation mask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1026820A (en) * 1996-07-11 1998-01-27 Toppan Printing Co Ltd Halftone phase shift mask blank, and halftone phase shift mask
JP2005037933A (en) * 2003-06-30 2005-02-10 Hoya Corp Method for manufacturing gray tone mask and gray tone mask

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