JPH01166046A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPH01166046A JPH01166046A JP62325959A JP32595987A JPH01166046A JP H01166046 A JPH01166046 A JP H01166046A JP 62325959 A JP62325959 A JP 62325959A JP 32595987 A JP32595987 A JP 32595987A JP H01166046 A JPH01166046 A JP H01166046A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- photomask
- plating
- halation
- electroless
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 abstract description 9
- 238000000059 patterning Methods 0.000 abstract description 6
- 238000007772 electroless plating Methods 0.000 abstract description 5
- 150000002429 hydrazines Chemical class 0.000 abstract description 2
- 229910018104 Ni-P Inorganic materials 0.000 abstract 2
- 229910018536 Ni—P Inorganic materials 0.000 abstract 2
- 239000005708 Sodium hypochlorite Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 3
- 229910000423 chromium oxide Inorganic materials 0.000 description 3
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、回路基板、液晶パネル、半導体等の微細パタ
ーン形成に用いるフォトマスクに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photomask used for forming fine patterns on circuit boards, liquid crystal panels, semiconductors, and the like.
従来、フォトリソグラフィ加工用マスクとしてハードマ
スクがその耐久性の高さゆえに広く用いられている。そ
の中でもクロムマスクが一般的に用いられている。該ク
ロムマスクは、ハレーションを防止するために、クロム
薄膜の上に酸化クロム膜を積層したものをブランクスと
して用い、それをフォトリソグラフィ加工によりパター
ン形成グしてフォトマスクとする。この場合クローム。Conventionally, hard masks have been widely used as masks for photolithography processing because of their high durability. Among them, chrome masks are commonly used. In order to prevent halation, the chrome mask uses a chromium oxide film laminated on a chromium thin film as a blank, which is then patterned by photolithography to form a photomask. In this case chrome.
酸化クローム膜の積層は、真空系を用い、スパッタリン
グ蒸着法などで行われ、大型の基板に対して適用の限界
があった。Lamination of chromium oxide films is carried out using a vacuum system using a sputtering deposition method, which has limitations in its applicability to large substrates.
ところが、最近大型マスクに対応するため、無電解N1
−Pめっきによりガラス等の透明基板上に金属膜を析出
させ、それをブランクスとして用いたフォトマスクも利
用されるようになってきた。この無電解めっき法による
ブランクスの作製では真空系を用いるスパッタ法−蒸着
法とは異なり簡易な装置でしかも大型サイズに対応しや
すいという特徴があり注目を浴びている。However, recently, in order to accommodate large masks, electroless N1
Photomasks in which a metal film is deposited on a transparent substrate such as glass by P plating and used as a blank have also come to be used. The production of blanks by this electroless plating method is attracting attention because, unlike the sputtering-evaporation method which uses a vacuum system, it uses a simple device and is easily applicable to large sizes.
しかし、無電解N1−Pめっきにより作製した被膜は金
属光沢を有するため、これをハードマスクとして用いる
とハレーション現象が生じ、転写したパターンのキレが
悪くなるという欠点があった。However, since the film produced by electroless N1-P plating has metallic luster, it has the disadvantage that when used as a hard mask, a halation phenomenon occurs and the sharpness of the transferred pattern becomes poor.
また、酸化クロム積層したクロムマスクにおいても、パ
ターンの側面部は金属光沢面が露出するのでハレーショ
ン現象を完全に防止できないという欠点があった。Further, even in a chromium mask in which chromium oxide is laminated, there is a drawback that the halation phenomenon cannot be completely prevented because the shiny metallic surface is exposed on the side surfaces of the pattern.
上記問題点を解決するために本発明は通常の無電解N1
−Pめっきによりブランクスを作製したパターンニング
したフォトマスクを0.1mol/β〜1.0mol/
Aの次亜リン酸ナトリウム溶液に浸漬した後、ヒドラジ
ン塩を0.5mol/ 12〜1.5mol/ 1含む
無電解めっき液にてめっきすることにより黒色の金属被
膜をパターン上およびパターン側面に形成したものであ
る。In order to solve the above problems, the present invention has developed a conventional electroless N1
- 0.1 mol/β to 1.0 mol/of a patterned photomask with a blank made by P plating.
After immersing in the sodium hypophosphite solution of A, a black metal film is formed on the pattern and on the pattern side by plating with an electroless plating solution containing 0.5 mol/12 to 1.5 mol/1 hydrazine salt. This is what I did.
上記のように作製したフォトマスクを使用すると回折現
象によってパターン領域にまわりこんだ光をフォトマス
クが吸収するのでハレーションの発生がなくパターンの
キレがよいパターンニングが可能となる。When the photomask produced as described above is used, the photomask absorbs the light that has spread around the pattern area due to the diffraction phenomenon, so that no halation occurs and sharp patterning is possible.
Snc jl! z溶液により感応化、pdc 122
溶液により活性化したガラス基板にトソプニコロンN−
47(奥野製薬製)無電解めっき液にて0.35μmの
N1−Pめっき被膜を析出させ、A Z −1370/
S F(ヘキストジャパン製)ポジ型フォトレジストを
用いてパターンニングし、エツチング、剥離1洗浄した
ものを0.2mol/j!の次亜リン酸ナトリウム溶液
に1分間浸漬し、下記主成分を含む無電解めっき液にて
0.1μmのめっきを施し、第1図に示されるフォトマ
スクを得る。Snc jl! Sensitized by z solution, pdc 122
Tosopnicolone N- on a glass substrate activated by a solution
47 (manufactured by Okuno Pharmaceutical) A 0.35 μm N1-P plating film was deposited using an electroless plating solution, and AZ-1370/
SF (manufactured by Hoechst Japan) positive type photoresist was patterned, etched, peeled and washed, 0.2 mol/j! The photomask shown in FIG. 1 was obtained by immersing the photomask in a sodium hypophosphite solution for 1 minute and plating with a thickness of 0.1 μm using an electroless plating solution containing the following main components.
NiSO44g / 1−
N2H41,5mol/ j!
クエン酸ナトリウム 0.2mol/ffiパターン
表面が黒色化したこの第1図のフォトマスクを用いてパ
ターンニングしたところ、第1図に示すようにパターン
に乱れが生じなかった。NiSO44g/1-N2H41,5mol/j! Sodium citrate 0.2 mol/ffi When patterning was performed using the photomask shown in FIG. 1 with a blackened pattern surface, no disturbance occurred in the pattern as shown in FIG.
上記実施例と比較するため実施例と同様にしてN1−P
めっき、パターンニング、剥離、洗浄まで処理し、黒色
化しないフォトマスクを用いてパターンニングを行った
ところ、第3図に示すようにパターンに乱れが生じた。In order to compare with the above example, N1-P was prepared in the same manner as in the example.
When plating, patterning, peeling, and cleaning were performed and patterning was performed using a non-blackening photomask, the pattern was disturbed as shown in FIG. 3.
本発明は以上説明したように、あらかじめパターンニン
グしたNf−Pハードマスクのパターン上およびパター
ン側面に黒色化被膜を付与することによりハレーション
現象を防止することができ、微細でしかもパターン形状
の精度を要求される製品に対して有効である。As explained above, the present invention can prevent halation by applying a black coating on the pattern and side surface of a pre-patterned Nf-P hard mask, and can improve the precision of the fine pattern shape. Valid for the required product.
第1図は本発明のフォトマスクのパターン断面図である
。第2図は本発明のフォトマスクでパターンニングした
場合のパターンの状態図である。
第3図はハレーション現象が生じた場合の状態図である
。
1・・・パターン部
2・・・ハレーションによるパターンの乱れ3・・・N
1−P膜
4・・・黒色化膜
以上
出願人 セイコー電子工業株式会社
第3図FIG. 1 is a cross-sectional view of a pattern of a photomask according to the present invention. FIG. 2 is a state diagram of a pattern when patterning is performed using the photomask of the present invention. FIG. 3 is a state diagram when a halation phenomenon occurs. 1...Pattern part 2...Pattern disturbance due to halation 3...N
1-P film 4...blackened film and above Applicant Seiko Electronics Industries Co., Ltd. Figure 3
Claims (1)
クにおいて、該パターンの上部および側面部を黒色化し
たフォトマスク。A photomask in which the upper and side surfaces of the pattern are blackened in a hard mask in which a pattern is formed using a metal thin film on a transparent substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62325959A JPH01166046A (en) | 1987-12-22 | 1987-12-22 | Photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62325959A JPH01166046A (en) | 1987-12-22 | 1987-12-22 | Photomask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01166046A true JPH01166046A (en) | 1989-06-29 |
Family
ID=18182509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62325959A Pending JPH01166046A (en) | 1987-12-22 | 1987-12-22 | Photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01166046A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10838295B2 (en) * | 2017-05-04 | 2020-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask and fabrication method therefor |
US10969677B2 (en) * | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask |
US10969686B2 (en) * | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
US11029596B2 (en) | 2016-01-27 | 2021-06-08 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
-
1987
- 1987-12-22 JP JP62325959A patent/JPH01166046A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10969677B2 (en) * | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask |
US10969686B2 (en) * | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
US11029596B2 (en) | 2016-01-27 | 2021-06-08 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
US10838295B2 (en) * | 2017-05-04 | 2020-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask and fabrication method therefor |
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