JPH01166046A - Photomask - Google Patents

Photomask

Info

Publication number
JPH01166046A
JPH01166046A JP62325959A JP32595987A JPH01166046A JP H01166046 A JPH01166046 A JP H01166046A JP 62325959 A JP62325959 A JP 62325959A JP 32595987 A JP32595987 A JP 32595987A JP H01166046 A JPH01166046 A JP H01166046A
Authority
JP
Japan
Prior art keywords
pattern
photomask
plating
halation
electroless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62325959A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Furuta
一吉 古田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP62325959A priority Critical patent/JPH01166046A/en
Publication of JPH01166046A publication Critical patent/JPH01166046A/en
Pending legal-status Critical Current

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  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To prevent halation by applying a blackened film on the pattern and pattern side face of a previously patterned Ni-P hard mask. CONSTITUTION:The photomask 4 formed by forming a blank by ordinary electroless Ni-P plating on a transparent substrate 5 and patterning the same is immersed into a 0.1-1.0mol/l sodium hypochlorite soln. Said mask is there after subjected to plating by an electroless plating liquid contg. 0.5-1.5mol/l hydrazine salt, by which the black metallic film 3 is formed on the pattern and pattern side face. The light extended into the pattern region by diffraction is absorbed by the photomask if the photomask produced in such a manner is used. The generation of the halation is thereby obviated and the sharp-edged pattern is formed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、回路基板、液晶パネル、半導体等の微細パタ
ーン形成に用いるフォトマスクに関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photomask used for forming fine patterns on circuit boards, liquid crystal panels, semiconductors, and the like.

〔従来の技術〕[Conventional technology]

従来、フォトリソグラフィ加工用マスクとしてハードマ
スクがその耐久性の高さゆえに広く用いられている。そ
の中でもクロムマスクが一般的に用いられている。該ク
ロムマスクは、ハレーションを防止するために、クロム
薄膜の上に酸化クロム膜を積層したものをブランクスと
して用い、それをフォトリソグラフィ加工によりパター
ン形成グしてフォトマスクとする。この場合クローム。
Conventionally, hard masks have been widely used as masks for photolithography processing because of their high durability. Among them, chrome masks are commonly used. In order to prevent halation, the chrome mask uses a chromium oxide film laminated on a chromium thin film as a blank, which is then patterned by photolithography to form a photomask. In this case chrome.

酸化クローム膜の積層は、真空系を用い、スパッタリン
グ蒸着法などで行われ、大型の基板に対して適用の限界
があった。
Lamination of chromium oxide films is carried out using a vacuum system using a sputtering deposition method, which has limitations in its applicability to large substrates.

ところが、最近大型マスクに対応するため、無電解N1
−Pめっきによりガラス等の透明基板上に金属膜を析出
させ、それをブランクスとして用いたフォトマスクも利
用されるようになってきた。この無電解めっき法による
ブランクスの作製では真空系を用いるスパッタ法−蒸着
法とは異なり簡易な装置でしかも大型サイズに対応しや
すいという特徴があり注目を浴びている。
However, recently, in order to accommodate large masks, electroless N1
Photomasks in which a metal film is deposited on a transparent substrate such as glass by P plating and used as a blank have also come to be used. The production of blanks by this electroless plating method is attracting attention because, unlike the sputtering-evaporation method which uses a vacuum system, it uses a simple device and is easily applicable to large sizes.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし、無電解N1−Pめっきにより作製した被膜は金
属光沢を有するため、これをハードマスクとして用いる
とハレーション現象が生じ、転写したパターンのキレが
悪くなるという欠点があった。
However, since the film produced by electroless N1-P plating has metallic luster, it has the disadvantage that when used as a hard mask, a halation phenomenon occurs and the sharpness of the transferred pattern becomes poor.

また、酸化クロム積層したクロムマスクにおいても、パ
ターンの側面部は金属光沢面が露出するのでハレーショ
ン現象を完全に防止できないという欠点があった。
Further, even in a chromium mask in which chromium oxide is laminated, there is a drawback that the halation phenomenon cannot be completely prevented because the shiny metallic surface is exposed on the side surfaces of the pattern.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点を解決するために本発明は通常の無電解N1
−Pめっきによりブランクスを作製したパターンニング
したフォトマスクを0.1mol/β〜1.0mol/
Aの次亜リン酸ナトリウム溶液に浸漬した後、ヒドラジ
ン塩を0.5mol/ 12〜1.5mol/ 1含む
無電解めっき液にてめっきすることにより黒色の金属被
膜をパターン上およびパターン側面に形成したものであ
る。
In order to solve the above problems, the present invention has developed a conventional electroless N1
- 0.1 mol/β to 1.0 mol/of a patterned photomask with a blank made by P plating.
After immersing in the sodium hypophosphite solution of A, a black metal film is formed on the pattern and on the pattern side by plating with an electroless plating solution containing 0.5 mol/12 to 1.5 mol/1 hydrazine salt. This is what I did.

〔作用〕[Effect]

上記のように作製したフォトマスクを使用すると回折現
象によってパターン領域にまわりこんだ光をフォトマス
クが吸収するのでハレーションの発生がなくパターンの
キレがよいパターンニングが可能となる。
When the photomask produced as described above is used, the photomask absorbs the light that has spread around the pattern area due to the diffraction phenomenon, so that no halation occurs and sharp patterning is possible.

〔実施例〕〔Example〕

Snc jl! z溶液により感応化、pdc 122
溶液により活性化したガラス基板にトソプニコロンN−
47(奥野製薬製)無電解めっき液にて0.35μmの
N1−Pめっき被膜を析出させ、A Z −1370/
S F(ヘキストジャパン製)ポジ型フォトレジストを
用いてパターンニングし、エツチング、剥離1洗浄した
ものを0.2mol/j!の次亜リン酸ナトリウム溶液
に1分間浸漬し、下記主成分を含む無電解めっき液にて
0.1μmのめっきを施し、第1図に示されるフォトマ
スクを得る。
Snc jl! Sensitized by z solution, pdc 122
Tosopnicolone N- on a glass substrate activated by a solution
47 (manufactured by Okuno Pharmaceutical) A 0.35 μm N1-P plating film was deposited using an electroless plating solution, and AZ-1370/
SF (manufactured by Hoechst Japan) positive type photoresist was patterned, etched, peeled and washed, 0.2 mol/j! The photomask shown in FIG. 1 was obtained by immersing the photomask in a sodium hypophosphite solution for 1 minute and plating with a thickness of 0.1 μm using an electroless plating solution containing the following main components.

NiSO44g / 1− N2H41,5mol/ j! クエン酸ナトリウム  0.2mol/ffiパターン
表面が黒色化したこの第1図のフォトマスクを用いてパ
ターンニングしたところ、第1図に示すようにパターン
に乱れが生じなかった。
NiSO44g/1-N2H41,5mol/j! Sodium citrate 0.2 mol/ffi When patterning was performed using the photomask shown in FIG. 1 with a blackened pattern surface, no disturbance occurred in the pattern as shown in FIG.

上記実施例と比較するため実施例と同様にしてN1−P
めっき、パターンニング、剥離、洗浄まで処理し、黒色
化しないフォトマスクを用いてパターンニングを行った
ところ、第3図に示すようにパターンに乱れが生じた。
In order to compare with the above example, N1-P was prepared in the same manner as in the example.
When plating, patterning, peeling, and cleaning were performed and patterning was performed using a non-blackening photomask, the pattern was disturbed as shown in FIG. 3.

〔発明の効果〕〔Effect of the invention〕

本発明は以上説明したように、あらかじめパターンニン
グしたNf−Pハードマスクのパターン上およびパター
ン側面に黒色化被膜を付与することによりハレーション
現象を防止することができ、微細でしかもパターン形状
の精度を要求される製品に対して有効である。
As explained above, the present invention can prevent halation by applying a black coating on the pattern and side surface of a pre-patterned Nf-P hard mask, and can improve the precision of the fine pattern shape. Valid for the required product.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明のフォトマスクのパターン断面図である
。第2図は本発明のフォトマスクでパターンニングした
場合のパターンの状態図である。 第3図はハレーション現象が生じた場合の状態図である
。 1・・・パターン部 2・・・ハレーションによるパターンの乱れ3・・・N
1−P膜 4・・・黒色化膜 以上 出願人 セイコー電子工業株式会社 第3図
FIG. 1 is a cross-sectional view of a pattern of a photomask according to the present invention. FIG. 2 is a state diagram of a pattern when patterning is performed using the photomask of the present invention. FIG. 3 is a state diagram when a halation phenomenon occurs. 1...Pattern part 2...Pattern disturbance due to halation 3...N
1-P film 4...blackened film and above Applicant Seiko Electronics Industries Co., Ltd. Figure 3

Claims (1)

【特許請求の範囲】[Claims] 透明基板上に金属薄膜にてパターン形成したハードマス
クにおいて、該パターンの上部および側面部を黒色化し
たフォトマスク。
A photomask in which the upper and side surfaces of the pattern are blackened in a hard mask in which a pattern is formed using a metal thin film on a transparent substrate.
JP62325959A 1987-12-22 1987-12-22 Photomask Pending JPH01166046A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62325959A JPH01166046A (en) 1987-12-22 1987-12-22 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62325959A JPH01166046A (en) 1987-12-22 1987-12-22 Photomask

Publications (1)

Publication Number Publication Date
JPH01166046A true JPH01166046A (en) 1989-06-29

Family

ID=18182509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62325959A Pending JPH01166046A (en) 1987-12-22 1987-12-22 Photomask

Country Status (1)

Country Link
JP (1) JPH01166046A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10838295B2 (en) * 2017-05-04 2020-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and fabrication method therefor
US10969677B2 (en) * 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask
US10969686B2 (en) * 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
US11029596B2 (en) 2016-01-27 2021-06-08 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10969677B2 (en) * 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask
US10969686B2 (en) * 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
US11029596B2 (en) 2016-01-27 2021-06-08 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
US10838295B2 (en) * 2017-05-04 2020-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and fabrication method therefor

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