JPS6325356B2 - - Google Patents
Info
- Publication number
- JPS6325356B2 JPS6325356B2 JP54026877A JP2687779A JPS6325356B2 JP S6325356 B2 JPS6325356 B2 JP S6325356B2 JP 54026877 A JP54026877 A JP 54026877A JP 2687779 A JP2687779 A JP 2687779A JP S6325356 B2 JPS6325356 B2 JP S6325356B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- liquid crystal
- film
- display element
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 23
- 239000004973 liquid crystal related substance Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 14
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 14
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 229910003437 indium oxide Inorganic materials 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Description
【発明の詳細な説明】
本発明は、液晶表示素子に関するものである。
さらに詳しくは、積層配置された3枚以上のガラ
ス基板の相互間にそれぞれ液晶層を備えた、いわ
ゆる多層液晶表示素子において、上下の液晶層に
挾まれるように配置された中間ガラス基板の上下
面に設けられた透明導電性被膜、即ち透明電極パ
ターンの構成に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a liquid crystal display element.
More specifically, in a so-called multilayer liquid crystal display element, in which three or more glass substrates are laminated and each has a liquid crystal layer between them, an intermediate glass substrate is sandwiched between upper and lower liquid crystal layers. This invention relates to the structure of a transparent conductive coating provided on the lower surface, that is, a transparent electrode pattern.
従来、液晶表示素子は、第1図に示す如く2枚
のガラス基板1および2を接着し、該両基板の間
に液晶3を封入して構成され、該一対のガラス基
板の液晶と接する側の面に金属酸化物透明導電性
被膜で形成された電極パターン4を有していた。
この様な液晶表示素子の使用される腕時計等の分
野においては、限られた表示面積の中に様々な形
態の表示をすることが要求され、電極形状は複雑
をきわめ、一個の表示素子で表示しうる情報量
は、限界となりつつある。そこで最近は、複数個
の表示素子を重ねて一体化し、複数の液晶層とこ
れに対応する電極を有した多層液晶表示素子が実
用化され始めた。この様な多層液晶表示素子を製
作する場合、第2図に示す様に複数個の完成した
表示素子21,22を接着剤23等で固着して一
体化する方法もあるが、この場合表示素子の総厚
が厚くなり、又接着時に気泡が混入し易く、見映
えを損ねるという欠点がある。そこで例えば2層
で構成された表示素子を得る場合、第3図に示す
如く3枚のガラス基板31,32及び33を用い
て、2つの液晶層34および35を有する2層表
示素子を製作することが考えられる。この場合中
央のガラス基板32の上下両面に電極パターン3
6,37を形成することが必要となる。 Conventionally, a liquid crystal display element is constructed by adhering two glass substrates 1 and 2 as shown in FIG. 1, and sealing a liquid crystal 3 between the two substrates. It had an electrode pattern 4 formed of a metal oxide transparent conductive film on its surface.
In fields such as wristwatches where such liquid crystal display elements are used, it is required to display various forms within a limited display area, and the electrode shapes are extremely complex, making it difficult to display with a single display element. The amount of information that can be collected is reaching its limits. Therefore, recently, a multilayer liquid crystal display element, in which a plurality of display elements are stacked and integrated, and has a plurality of liquid crystal layers and corresponding electrodes, has begun to be put into practical use. When manufacturing such a multilayer liquid crystal display element, there is a method of fixing and integrating a plurality of completed display elements 21 and 22 with an adhesive 23, etc., as shown in FIG. 2, but in this case, the display element The overall thickness of the adhesive increases, and air bubbles tend to get mixed in when bonding, which impairs the appearance. Therefore, when obtaining a display element composed of two layers, for example, a two-layer display element having two liquid crystal layers 34 and 35 is manufactured using three glass substrates 31, 32 and 33 as shown in FIG. It is possible that In this case, electrode patterns 3 are provided on both upper and lower surfaces of the central glass substrate 32.
6, 37 is required.
通常、透明導電性被膜の電極パターンを形成を
する場合、複雑な電極パターン形状を得るために
は、フオトエツチング法が用いられる。この方法
は、一般的に次の様な手順で行なわれる。即ちま
ず最初にガラス基板のほぼ全面に蒸着等の方法で
金属酸化物の透明導電性被膜を一様に形成し、こ
の被膜上にフオトレジスト被膜をスピンナー等に
より形成し、しかる後この被膜上にフオトマスク
を載せて、その上から紫外線等を照射して露光
し、更にこれを現像液に浸漬する等により現像し
た後、100℃前後の温度でベーキングし、しかる
後エツチング液に浸漬する等により、不要部分の
フオトレジストを除去する。しかる後、フオトレ
ジストによつて保護されていない、即ち露出した
透明導電性被膜部をエツチング除去し、最後にフ
オトレジスト被膜を剥離除去して電極パターンの
形成を完了する。 Usually, when forming an electrode pattern of a transparent conductive film, a photoetching method is used to obtain a complicated electrode pattern shape. This method is generally performed in the following steps. That is, first, a transparent conductive film of a metal oxide is uniformly formed on almost the entire surface of a glass substrate by a method such as vapor deposition, a photoresist film is formed on this film using a spinner, etc., and then a photoresist film is formed on this film. A photomask is placed on the photomask, exposed by irradiating it with ultraviolet rays, etc., and then developed by immersing it in a developer, baking it at a temperature of around 100°C, and then immersing it in an etching solution. Remove unnecessary photoresist. Thereafter, the exposed portions of the transparent conductive film that are not protected by the photoresist are etched away, and finally the photoresist film is peeled off to complete the formation of the electrode pattern.
さて前記2層表示素子の中央のガラス基板32
の上下面両面に電極を形成する場合は、概略上記
フオト法の手順を繰り返さねばならない。即ち上
記の様にして上面に電極パターン36を形成され
たガラス基板32の下面全面に、同様に透明導電
性被膜を一様に形成し、フオトレジスト被膜形
成、露光、現像、ベーキングの各工程を行ない、
ここで上面の電極パターン36を保護するため
に、該電極パターン36の表面上にエツチングレ
ジスト被膜を形成し、しかる後、エツチング、レ
ジスト膜剥離という工程を経て上下両面に電極パ
ターン36,37が形成される。 Now, the central glass substrate 32 of the two-layer display element
When forming electrodes on both the upper and lower surfaces of the substrate, it is necessary to roughly repeat the steps of the photo method described above. That is, a transparent conductive film is similarly uniformly formed on the entire lower surface of the glass substrate 32 on which the electrode pattern 36 is formed on the upper surface as described above, and the steps of photoresist film formation, exposure, development, and baking are carried out. conduct,
Here, in order to protect the electrode pattern 36 on the upper surface, an etching resist film is formed on the surface of the electrode pattern 36, and then, through a process of etching and resist film peeling, electrode patterns 36 and 37 are formed on both the upper and lower surfaces. be done.
この様に一枚のガラス基板の上下両面に電極パ
ターン形成をするためには、予め形成された上面
の電極パターン36を、エツチング工程で保護す
るための耐エツチング保護膜が必要である。この
様な保護膜を形成することは、いたずらに製造工
程を増すばかりか、この保護膜形成のために上面
の電極パターンや下面のフオトレジスト被膜を損
傷し、エツチング不良を増大し、製造コストを引
き上げる原因となり、又、資源の無駄使いともな
る。 In order to form electrode patterns on both the upper and lower surfaces of a single glass substrate in this manner, an etching-resistant protective film is required to protect the previously formed electrode pattern 36 on the upper surface during the etching process. Forming such a protective film not only unnecessarily increases the manufacturing process, but also damages the electrode pattern on the top surface and the photoresist film on the bottom surface, increases etching defects, and increases manufacturing costs. It also causes a waste of resources.
そこで本発明に於いては、この様に一枚の透明
基板の両面に透明電極パターンを形成する場合、
一方の面と他方の面とでエツチング特性の異なる
金属酸化物透明導電性被膜をそれぞれ形成し、さ
らにその被膜のうち、片方の面に形成された金属
酸化物透明導電性被膜に対してのみエツチングレ
ートが高くなるエツチング液2種類をそれぞれ使
用することにより、前述の様な保護膜を形成する
ことを省略し、一枚の基板の両面に透明電極パタ
ーンを形成することができる。 Therefore, in the present invention, when forming transparent electrode patterns on both sides of a single transparent substrate,
A metal oxide transparent conductive film with different etching characteristics is formed on one side and the other side, and then only the metal oxide transparent conductive film formed on one side is etched. By using two types of etching liquids each having a high etching rate, it is possible to omit the formation of a protective film as described above and to form transparent electrode patterns on both sides of a single substrate.
以下、本発明の実施例について説明する。 Examples of the present invention will be described below.
(実施例)
一枚のガラス基板の一方の面には第1の金属酸
化物透明導電性被膜として酸化第2錫(SnO2)
被膜をスパツタ、CVD、スプレー法等により形
成し、前述のフオトレジスト法により、フオトレ
ジスト塗布、露光、現像、ベーキング、エツチン
グ、及びレジスト膜剥離の各工程を経て電極パタ
ーンを形成し、しかる後他方の面には第2の金属
酸化物透明導電性被膜として酸化インジウム
(In2O3)被膜を蒸着等により形成し、同様にフオ
トレジスト塗布、露光、現像、ベーキング、エツ
チング及びレジスト膜剥離のフオト法工程を経
て、一枚のガラス基板の上下両面に透明導電性被
膜の電極パターンを形成する。ここで酸化第二錫
と酸化インジウムのエツチングレートに差を持た
せるため、酸化第二錫に対する第1のエツチング
液としては亜鉛粉末と稀塩酸等を用いて行なう通
常の酸化第二錫膜のエツチング方法を取れば良い
が、酸化インジウムに対する第2のエツチング液
としては、亜鉛粉末を用いない塩酸浴を使用す
る。酸化第二錫は、酸化インジウムに比べ化学的
に安定な被膜であり、前者は塩酸浴でエツチング
するのは困難であるが後者は比較的容易である。(Example) One surface of a single glass substrate was coated with stannic oxide (SnO 2 ) as a first metal oxide transparent conductive coating.
A film is formed by sputtering, CVD, spraying, etc., and an electrode pattern is formed by the photoresist method described above through the steps of photoresist coating, exposure, development, baking, etching, and resist film peeling. On the surface, an indium oxide (In 2 O 3 ) film is formed as a second metal oxide transparent conductive film by vapor deposition or the like, and photoresist coating, exposure, development, baking, etching, and resist film peeling are similarly performed. Through a process, electrode patterns of transparent conductive films are formed on both the top and bottom surfaces of a single glass substrate. Here, in order to create a difference in the etching rate between tin oxide and indium oxide, ordinary tin oxide film etching is performed using zinc powder and dilute hydrochloric acid as the first etching solution for tin oxide. Although any method may be used, a hydrochloric acid bath that does not use zinc powder is used as the second etching solution for indium oxide. Stannic oxide is a chemically more stable film than indium oxide; the former is difficult to etch in a hydrochloric acid bath, but the latter is relatively easy to etch.
上記の実施例では、透明導電膜の化学的エツチ
ングを前提に、酸化第二錫膜による電極形成を、
酸化インジウム膜に先だつて行なつたが、プラズ
マエツチング乃至イオンエツチング等を用いてエ
ツチングを行なう場合、酸化第二錫膜の方が酸化
インジウム膜に比して、エツチング速度が速いの
で上記実施例とは逆に、酸化インジウムの電極形
成を酸化第二錫膜に先だつて行なうことも考えら
れる。 In the above example, on the premise of chemical etching of a transparent conductive film, electrode formation using a stannic oxide film was performed.
This was carried out before the indium oxide film, but when etching is performed using plasma etching or ion etching, the etching rate of the stannic oxide film is faster than that of the indium oxide film, so it is not suitable for the above example. Conversely, it is also conceivable to form the indium oxide electrode before forming the stannic oxide film.
上記実施例で示した様に本発明によれば、予め
透明導電膜の電極形成をした一方の面に、エツチ
ングレジスト被膜を形成し、他方の面のエツチン
グに際し、該電極を保護するという工程と最後に
該保護膜を除去するという工程を省略できる。こ
のことは単に二工程の省略による製造工数及び資
材の削減にとどまらず、従来工程で必要としたエ
ツチングレジスト被膜のピンホール及至スクラツ
チ等に起因する工程不良を大幅に減少できる効果
も有し、従つて本発明によれば液晶表示素子の製
造コストを削減し、広く社会に安価なデジタル時
計を提供することが可能となる。 As shown in the above embodiments, according to the present invention, an etching resist film is formed on one side of a transparent conductive film on which electrodes have been formed in advance to protect the electrode when etching the other side. The final step of removing the protective film can be omitted. This not only reduces manufacturing man-hours and materials by simply omitting two steps, but also has the effect of greatly reducing process defects caused by pinholes, scratches, etc. in the etching resist film required in the conventional process. According to the present invention, it is possible to reduce the manufacturing cost of liquid crystal display elements and provide inexpensive digital watches to society at large.
なお、中間のガラス基板32の上面側に液晶層
24のためのコモン側電極パターンを形成した後
に、該電極パターン上にSiO2等の透明絶縁皮膜
を形成し、しかる後に下面側に液晶層35用のセ
グメント電極パターンを形成する場合にも、本発
明を適用できることは明らかである。その場合に
は、上記SiO2等の透明絶縁膜が、上面側の電極
パターンの保護の役割を果たすとともに、ガラス
基板からのアリカリイオン溶出の防止膜をも兼用
することになるために、本発明の効果も、より完
全なものとなる。 Note that after forming a common side electrode pattern for the liquid crystal layer 24 on the upper surface side of the intermediate glass substrate 32, a transparent insulating film such as SiO 2 is formed on the electrode pattern, and then a liquid crystal layer 35 is formed on the lower surface side. It is clear that the present invention can also be applied to the case of forming segment electrode patterns for. In that case, the transparent insulating film such as SiO 2 plays the role of protecting the electrode pattern on the upper surface side and also serves as a film to prevent alkali ion elution from the glass substrate. The effect will also be more complete.
第1図は従来の液晶表示素子の断面図。第2図
は2個の液晶表示素子を接着して一体化したもの
の断面図。第3図は3枚のガラス基板で構成され
た2層液晶表示素子の断面図を示す。
31,32,33……ガラス基板、34,35
……液晶層、36,37……電極パターン。
FIG. 1 is a cross-sectional view of a conventional liquid crystal display element. FIG. 2 is a cross-sectional view of two liquid crystal display elements bonded and integrated. FIG. 3 shows a cross-sectional view of a two-layer liquid crystal display element composed of three glass substrates. 31, 32, 33...Glass substrate, 34, 35
...Liquid crystal layer, 36, 37... Electrode pattern.
Claims (1)
に、それぞれ液晶層を設けてなる多層液晶表示素
子の製造方法において、 (a) 上下から液晶層にはさまれるように配置され
た透明基板の両面に、それぞれエツチング特性
の異なる第1、第2の金属酸化物透明導電性被
膜を形成する工程と、 (b) 前記第1の被膜に対するエツチングレート
が、前記第2の被膜に対するエツチングレート
よりも高い第1のエツチング液でエツチングす
る工程と、 (c) 前記第2の被膜に対するエツチングレート
が、前記第1の被膜に対するエツチングレート
よりも高い第2のエツチング液でエツチングす
る工程とを有し、 前記透明基板の両面に形成された前記第1、第2
の被膜に対しそれぞれエツチングレートの異なる
エツチング液を用いて透明電極パターンを形成す
ることを特徴とする液晶表示素子の製造方法。 2 第1の金属酸化物透明導電性被膜が酸化第二
錫で、第2の金属酸化物透明導電性被膜が酸化イ
ンジウムで、第1のエツチング液が亜鉛粉末と稀
塩酸を用いたもので、第2のエツチング液が塩酸
であることを特徴とする特許請求の範囲第1項記
載の液晶表示素子の製造方法。[Scope of Claims] 1. A method for manufacturing a multilayer liquid crystal display element in which a liquid crystal layer is provided between three or more transparent substrates arranged in a stacked manner, including: (b) forming first and second metal oxide transparent conductive films having different etching characteristics on both sides of a transparent substrate disposed on the substrate; (c) etching the second coating with a second etching solution having a higher etching rate than the first coating; the first and second surfaces formed on both sides of the transparent substrate;
A method for manufacturing a liquid crystal display element, comprising forming transparent electrode patterns on each film using etching solutions having different etching rates. 2. The first metal oxide transparent conductive coating is made of stannic oxide, the second metal oxide transparent conductive coating is made of indium oxide, and the first etching solution uses zinc powder and dilute hydrochloric acid; 2. The method of manufacturing a liquid crystal display element according to claim 1, wherein the second etching solution is hydrochloric acid.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2687779A JPS55120083A (en) | 1979-03-08 | 1979-03-08 | Liquid crystal display element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2687779A JPS55120083A (en) | 1979-03-08 | 1979-03-08 | Liquid crystal display element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55120083A JPS55120083A (en) | 1980-09-16 |
JPS6325356B2 true JPS6325356B2 (en) | 1988-05-25 |
Family
ID=12205516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2687779A Granted JPS55120083A (en) | 1979-03-08 | 1979-03-08 | Liquid crystal display element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55120083A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04198842A (en) * | 1990-11-29 | 1992-07-20 | Orc Mfg Co Ltd | Stress relaxation measuring apparatus |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8581108B1 (en) | 2006-08-23 | 2013-11-12 | Rockwell Collins, Inc. | Method for providing near-hermetically coated integrated circuit assemblies |
US8363189B2 (en) * | 2007-12-18 | 2013-01-29 | Rockwell Collins, Inc. | Alkali silicate glass for displays |
DE202008015045U1 (en) * | 2008-11-13 | 2009-02-19 | Rosenberger Hochfrequenztechnik Gmbh & Co. Kg | Connectors for star quad cables |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53864A (en) * | 1976-06-23 | 1978-01-07 | Nippon Electric Co | Method of producing thin film circuit connector |
-
1979
- 1979-03-08 JP JP2687779A patent/JPS55120083A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53864A (en) * | 1976-06-23 | 1978-01-07 | Nippon Electric Co | Method of producing thin film circuit connector |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04198842A (en) * | 1990-11-29 | 1992-07-20 | Orc Mfg Co Ltd | Stress relaxation measuring apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPS55120083A (en) | 1980-09-16 |
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