JPS5679464A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5679464A JPS5679464A JP15729179A JP15729179A JPS5679464A JP S5679464 A JPS5679464 A JP S5679464A JP 15729179 A JP15729179 A JP 15729179A JP 15729179 A JP15729179 A JP 15729179A JP S5679464 A JPS5679464 A JP S5679464A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sit
- gate
- channel
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 108091006146 Channels Proteins 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 abstract 1
- 230000003321 amplification Effects 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15729179A JPS5679464A (en) | 1979-12-03 | 1979-12-03 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15729179A JPS5679464A (en) | 1979-12-03 | 1979-12-03 | Semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5679464A true JPS5679464A (en) | 1981-06-30 |
| JPH023305B2 JPH023305B2 (enrdf_load_stackoverflow) | 1990-01-23 |
Family
ID=15646440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15729179A Granted JPS5679464A (en) | 1979-12-03 | 1979-12-03 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5679464A (enrdf_load_stackoverflow) |
-
1979
- 1979-12-03 JP JP15729179A patent/JPS5679464A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH023305B2 (enrdf_load_stackoverflow) | 1990-01-23 |
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