JPS5677375A - Plasma vapor deposition apparatus - Google Patents

Plasma vapor deposition apparatus

Info

Publication number
JPS5677375A
JPS5677375A JP15405279A JP15405279A JPS5677375A JP S5677375 A JPS5677375 A JP S5677375A JP 15405279 A JP15405279 A JP 15405279A JP 15405279 A JP15405279 A JP 15405279A JP S5677375 A JPS5677375 A JP S5677375A
Authority
JP
Japan
Prior art keywords
temp
susceptor
vapor deposition
deposition apparatus
plasma vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15405279A
Other languages
Japanese (ja)
Inventor
Itaru Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP15405279A priority Critical patent/JPS5677375A/en
Publication of JPS5677375A publication Critical patent/JPS5677375A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a uniform film on wafers and improve the yield of product in a plasma vapor deposition apparatus by constituting a heater block for placement of a susceptor thereon by means of a plurality of heating elements which are temp. -controllable respectively independently. CONSTITUTION:In the plasma vapor deposition apparatus, the heater block 3 for placement of a susceptor 2 is constituted of a plurality of respectively independently temp. -controllable heating elements, by trisecting the same to, for example, 3A, 3B, 3C, along the longitudinal direction of the susceptor 2. The temp. of the heating element 3A in the central part is set lower than that of the heating elements 3B, 3C in the peripheral part to regulate the temp. of the susceptor 2 and make the temp. distribution in the longitudinal direction approximately uniform, whereby the uniformalization of the thickness and quality of the thin films formed on multiple wafers through one processing is achieved. In this way, the yield of products is improved with ease.
JP15405279A 1979-11-27 1979-11-27 Plasma vapor deposition apparatus Pending JPS5677375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15405279A JPS5677375A (en) 1979-11-27 1979-11-27 Plasma vapor deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15405279A JPS5677375A (en) 1979-11-27 1979-11-27 Plasma vapor deposition apparatus

Publications (1)

Publication Number Publication Date
JPS5677375A true JPS5677375A (en) 1981-06-25

Family

ID=15575854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15405279A Pending JPS5677375A (en) 1979-11-27 1979-11-27 Plasma vapor deposition apparatus

Country Status (1)

Country Link
JP (1) JPS5677375A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2616808A1 (en) * 1987-06-16 1988-12-23 Lemer & Cie Device for depositing a compound introduced by plasma, by heating on a substrate
JPH0239494U (en) * 1988-09-08 1990-03-16
JPH03124019A (en) * 1989-10-06 1991-05-27 Fuji Electric Co Ltd Vapor growth device
JPH0645261A (en) * 1992-07-23 1994-02-18 Toshiba Corp Semiconductor vapor growing apparatus
CN113201728A (en) * 2021-04-28 2021-08-03 錼创显示科技股份有限公司 Semiconductor wafer bearing structure and metal organic chemical vapor deposition device
CN115565852A (en) * 2022-12-06 2023-01-03 西安奕斯伟材料科技有限公司 Method and apparatus for back sealing silicon wafer

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2616808A1 (en) * 1987-06-16 1988-12-23 Lemer & Cie Device for depositing a compound introduced by plasma, by heating on a substrate
JPH0239494U (en) * 1988-09-08 1990-03-16
JPH03124019A (en) * 1989-10-06 1991-05-27 Fuji Electric Co Ltd Vapor growth device
JPH0645261A (en) * 1992-07-23 1994-02-18 Toshiba Corp Semiconductor vapor growing apparatus
CN113201728A (en) * 2021-04-28 2021-08-03 錼创显示科技股份有限公司 Semiconductor wafer bearing structure and metal organic chemical vapor deposition device
CN115565852A (en) * 2022-12-06 2023-01-03 西安奕斯伟材料科技有限公司 Method and apparatus for back sealing silicon wafer
CN115565852B (en) * 2022-12-06 2024-05-28 西安奕斯伟材料科技股份有限公司 Method and apparatus for back-sealing silicon wafers

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