JPS57197836A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57197836A JPS57197836A JP8330481A JP8330481A JPS57197836A JP S57197836 A JPS57197836 A JP S57197836A JP 8330481 A JP8330481 A JP 8330481A JP 8330481 A JP8330481 A JP 8330481A JP S57197836 A JPS57197836 A JP S57197836A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- heat treatment
- chip
- thermal strain
- slip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
PURPOSE:To keep the slip line due to thermal strain in a process of heat treatment in a groove to eliminate the thermal strain, by forming a groove along a chip cut line scheduled on a wafer prior to the heat treatment of the semiconductor wafer. CONSTITUTION:The groove 3 is formed along a cut line scheduled on the semiconductor wafer 100 for required heat treatment to cause only the thermal strain accompanied by heat treatment with slip line. These slip lines 1 are all generated in the groove by this groove 3 not on each chip. Thus, the yield and quality as a chip is improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8330481A JPS57197836A (en) | 1981-05-29 | 1981-05-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8330481A JPS57197836A (en) | 1981-05-29 | 1981-05-29 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57197836A true JPS57197836A (en) | 1982-12-04 |
Family
ID=13798665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8330481A Pending JPS57197836A (en) | 1981-05-29 | 1981-05-29 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57197836A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61247017A (en) * | 1985-04-24 | 1986-11-04 | Mitsubishi Electric Corp | Preparation of semiconductor device |
JPH0529454A (en) * | 1991-07-19 | 1993-02-05 | Seikosha Co Ltd | Manufacture of semiconductor integrated circuit chip |
-
1981
- 1981-05-29 JP JP8330481A patent/JPS57197836A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61247017A (en) * | 1985-04-24 | 1986-11-04 | Mitsubishi Electric Corp | Preparation of semiconductor device |
JPH0529454A (en) * | 1991-07-19 | 1993-02-05 | Seikosha Co Ltd | Manufacture of semiconductor integrated circuit chip |
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