JPS61247017A - Preparation of semiconductor device - Google Patents

Abstract

PURPOSE:To make it possible to manufacture a semiconductor device of high reliability avoiding the generation of cracks and warps, by forming previously a groove in the scribed part of the semiconductor substrate and dispersing the internal stress of the semiconductor film formed on the groove. CONSTITUTION:The concave groove 3 is formed on the scribed part of the semiconductor substrate 1 by etching, and the semiconductor film 2a is formed on the groove. As the shape of the groove is concave, the semiconductor film 2a is continuously formed along the groove, but the chain of molecules constituting the semiconductor film 2a, the source of stress, decreases to the amount corresponding to the fall of the groove, and the stress is reduced. In the case where the groove 4 in the form of an overhang is formed on the scribed part of the semiconductor substrate 1 by etching, and the semiconductor film 2a is formed on the groove, the semiconductor film 2a is divided by the overhang part because of the overhang shape of the groove 4. Consequently, the chain of molecules constituting the semiconductor film 2a is also divided and the stress is still more reduced.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for alleviating stress when a semiconductor film is formed on a semiconductor substrate. [Technology] Figure 3 is a schematic cross-sectional view showing the state when a semiconductor film is formed on a semiconductor substrate by a conventional method. 2 shows a semiconductor film formed by sputtering or CVD, and has compressive stress and tensile stress, respectively. Figure 3 (a
) is the semiconductor film (2
In the case of a), FIG. 3(b) shows the case of the semiconductor film (2b) with tensile stress (indicated by ← in the figure).0 Case where the semiconductor substrate (1) has a multilayer substructure. This also includes cases where the person does not have one.

In other words, depending on the film material, formation method, formation temperature, etc. of the semiconductor film (2), compressive or tensile) stress is generated within the film, and as a result, the cracks as shown in Figures (a) and (1,) occur. Ta.

[Problem that the invention seeks to solve]

In the conventional manufacturing method for semiconductor devices, internal stress occurs in the formed film as described above, but when large internal stress is applied,
For example, it causes cracks and the like, reducing the reliability of the device. Further, warpage of the wafer causes a pattern shift in a part of the wafer during pattern transfer, resulting in problems such as deterioration of overlay accuracy.

This invention was made to solve the above-mentioned problems, and is one of the features of a semiconductor device that can disperse internal stress within a wafer and alleviate the warping of the wafer. ! The purpose is to obtain a manufacturing method.

[Failure to solve the problem]

In the method for manufacturing a semiconductor device according to the present invention, a concave groove or an overhang groove is formed in a scribe portion of a semiconductor substrate.

[Effect]

In this invention, the groove formed in the scribe portion makes the semiconductor film formed thereon concave or nearly divided, thereby dispersing the internal stress of the formed film.

〔Example〕

FIG. 1 is a sectional view showing a semiconductor wafer obtained by a method according to an embodiment of the present invention, and the same reference numerals as in the conventional example of FIG. 3 indicate equivalent parts. In this example, a concave groove (3) is formed in the scribe portion of the semiconductor substrate (1) by etching, and a semiconductor film (2a) is formed over it. In this case, since the groove (3) is concave, , semiconductor film (2a
) are formed continuously along the groove, but the chain of constituent molecules of the semiconductor film (2a), which is the source of stress, is reduced by an amount corresponding to the height of the recess, and the stress is weakened.

FIG. 2 is a sectional view showing a semiconductor wafer obtained by a method according to another embodiment of the present invention.
An overhanging groove (4) is formed in the scribe portion of 1) by etching, and a semiconductor film (2a) is formed thereon.

In this case, since the groove (4) has an overhang shape, the semiconductor film (2a) is divided at the overhang, and as a result, the chain of constituent molecules of the semiconductor film (2a), which is a source of stress, is also divided. Stress is further reduced. Even if the semiconductor Jl (2a) is not completely divided in this shape,
Board (1) due to the gap created directly under the overhang.
Although the case of the semiconductor film (2a) which generates a compressive stress of 0 or more to relieve the stress applied to the semiconductor film (2a) has been described, the same applies, of course, to the case of the semiconductor film (2b) which generates a tensile stress.

〔Effect of the invention〕

As described above, 1. In this invention, by simply forming a groove in the scribe portion of a semiconductor substrate in advance, the internal stress of the semiconductor film formed thereon can be dispersed, thereby avoiding the occurrence of cracks and warping, and improving reliability. It is possible to manufacture semiconductor devices with high performance.

[Brief explanation of the drawing]

FIG. 1 and FIG. 2 are cross-sectional views showing semiconductor wafers obtained by one embodiment method of the present invention and another embodiment method, respectively, and FIG. 3 is a case in which a semiconductor film is formed on a semiconductor substrate by a conventional method. FIG. 3(a) is a schematic cross-sectional view showing a state in which compressive stress is generated, and FIG. 3(1)) is a case in which tensile stress is generated.
), (2b) are the semiconductor 114, (31 is a recess (concave groove), and (4) is an overhang-shaped recess (groove). In addition, the same reference numerals in the figures indicate the same or equivalent parts.

Claims (2)

[Claims] (1) When forming a semiconductor film that induces stress in the semiconductor substrate using a film formation technique, a step of forming a recess in at least a part of the dicing line portion of the semiconductor substrate is performed in advance. A method for manufacturing a semiconductor device, comprising: (2) The method for manufacturing a semiconductor device according to claim 1, wherein the shape of the recess is an overhang shape.