JPS51133104A - A process for producing single crystal from high-melting-point materia ls - Google Patents
A process for producing single crystal from high-melting-point materia lsInfo
- Publication number
- JPS51133104A JPS51133104A JP5741375A JP5741375A JPS51133104A JP S51133104 A JPS51133104 A JP S51133104A JP 5741375 A JP5741375 A JP 5741375A JP 5741375 A JP5741375 A JP 5741375A JP S51133104 A JPS51133104 A JP S51133104A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- materia
- melting
- point
- producing single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:A bar type single crystal or bar type glass is obtained at uniform temperature distribution, using laser beam as a heating source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5741375A JPS51133104A (en) | 1975-05-16 | 1975-05-16 | A process for producing single crystal from high-melting-point materia ls |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5741375A JPS51133104A (en) | 1975-05-16 | 1975-05-16 | A process for producing single crystal from high-melting-point materia ls |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51133104A true JPS51133104A (en) | 1976-11-18 |
Family
ID=13054949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5741375A Pending JPS51133104A (en) | 1975-05-16 | 1975-05-16 | A process for producing single crystal from high-melting-point materia ls |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51133104A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110793662A (en) * | 2019-10-31 | 2020-02-14 | 深圳第三代半导体研究院 | Method for calibrating temperature field of large-size silicon carbide high-temperature reaction device |
| WO2022107345A1 (en) * | 2020-11-19 | 2022-05-27 | 株式会社クリスタルシステム | Single crystal fiber production apparatus, and single crystal fiber production method |
-
1975
- 1975-05-16 JP JP5741375A patent/JPS51133104A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110793662A (en) * | 2019-10-31 | 2020-02-14 | 深圳第三代半导体研究院 | Method for calibrating temperature field of large-size silicon carbide high-temperature reaction device |
| WO2022107345A1 (en) * | 2020-11-19 | 2022-05-27 | 株式会社クリスタルシステム | Single crystal fiber production apparatus, and single crystal fiber production method |
| US11739435B2 (en) | 2020-11-19 | 2023-08-29 | Crystal Systems Corporation | Single-crystal fiber production equipment and single-crystal fiber production method |
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