JPS6474721A - Manufacture of x-ray mask - Google Patents

Manufacture of x-ray mask

Info

Publication number
JPS6474721A
JPS6474721A JP23102787A JP23102787A JPS6474721A JP S6474721 A JPS6474721 A JP S6474721A JP 23102787 A JP23102787 A JP 23102787A JP 23102787 A JP23102787 A JP 23102787A JP S6474721 A JPS6474721 A JP S6474721A
Authority
JP
Japan
Prior art keywords
substrate
peripheral
shall
temperature
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23102787A
Other languages
Japanese (ja)
Inventor
Masaru Hori
Ichiro Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP23102787A priority Critical patent/JPS6474721A/en
Publication of JPS6474721A publication Critical patent/JPS6474721A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a mask substrate of high flatness having the small strain, by providing a temperature gradient on the main surface substrate part and the peripheral substrate part of the substrate so as to pile up substrate thin films. CONSTITUTION:Nitrided boron films 13 and 14 are formed on a substrate 10 by an LPCVD (reduced pressure chemical gaseous growth) method. B2H6 (N2 dilution 6%) and NH3 are used for raw material gas and the substrate 10 shall be an Si substrate of surface orientation (100). A susceptor shall be of SiO2 and the heaters 11 and 12, which are different in the substrate central part and in the peripheral part, are provided. By keeping the temperature of the two resistance heating heaters 11 and 12 at 400 deg.C in the central part substrate while at 330 deg.C in the peripheral part substrate, a temperature gradient of 50 deg.C between both parts is formed on the same substrate. Accordingly, two thin films having different properties can be formed simultaneously on the substrate 10. Thereby, by providing a change of the substrate temperature distribution by simple heater heating, an X-ray mask main surface substrate having small stress can be manufactured by one chemical gaseous phase growth process.
JP23102787A 1987-09-17 1987-09-17 Manufacture of x-ray mask Pending JPS6474721A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23102787A JPS6474721A (en) 1987-09-17 1987-09-17 Manufacture of x-ray mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23102787A JPS6474721A (en) 1987-09-17 1987-09-17 Manufacture of x-ray mask

Publications (1)

Publication Number Publication Date
JPS6474721A true JPS6474721A (en) 1989-03-20

Family

ID=16917118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23102787A Pending JPS6474721A (en) 1987-09-17 1987-09-17 Manufacture of x-ray mask

Country Status (1)

Country Link
JP (1) JPS6474721A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0373950A (en) * 1989-08-14 1991-03-28 Fujitsu Ltd Manufacture of mask for exposing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0373950A (en) * 1989-08-14 1991-03-28 Fujitsu Ltd Manufacture of mask for exposing

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