JPS6474721A - Manufacture of x-ray mask - Google Patents
Manufacture of x-ray maskInfo
- Publication number
- JPS6474721A JPS6474721A JP23102787A JP23102787A JPS6474721A JP S6474721 A JPS6474721 A JP S6474721A JP 23102787 A JP23102787 A JP 23102787A JP 23102787 A JP23102787 A JP 23102787A JP S6474721 A JPS6474721 A JP S6474721A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- peripheral
- shall
- temperature
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To form a mask substrate of high flatness having the small strain, by providing a temperature gradient on the main surface substrate part and the peripheral substrate part of the substrate so as to pile up substrate thin films. CONSTITUTION:Nitrided boron films 13 and 14 are formed on a substrate 10 by an LPCVD (reduced pressure chemical gaseous growth) method. B2H6 (N2 dilution 6%) and NH3 are used for raw material gas and the substrate 10 shall be an Si substrate of surface orientation (100). A susceptor shall be of SiO2 and the heaters 11 and 12, which are different in the substrate central part and in the peripheral part, are provided. By keeping the temperature of the two resistance heating heaters 11 and 12 at 400 deg.C in the central part substrate while at 330 deg.C in the peripheral part substrate, a temperature gradient of 50 deg.C between both parts is formed on the same substrate. Accordingly, two thin films having different properties can be formed simultaneously on the substrate 10. Thereby, by providing a change of the substrate temperature distribution by simple heater heating, an X-ray mask main surface substrate having small stress can be manufactured by one chemical gaseous phase growth process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23102787A JPS6474721A (en) | 1987-09-17 | 1987-09-17 | Manufacture of x-ray mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23102787A JPS6474721A (en) | 1987-09-17 | 1987-09-17 | Manufacture of x-ray mask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6474721A true JPS6474721A (en) | 1989-03-20 |
Family
ID=16917118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23102787A Pending JPS6474721A (en) | 1987-09-17 | 1987-09-17 | Manufacture of x-ray mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6474721A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0373950A (en) * | 1989-08-14 | 1991-03-28 | Fujitsu Ltd | Manufacture of mask for exposing |
-
1987
- 1987-09-17 JP JP23102787A patent/JPS6474721A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0373950A (en) * | 1989-08-14 | 1991-03-28 | Fujitsu Ltd | Manufacture of mask for exposing |
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