JPS58100420A - Liquid epitaxial growth method - Google Patents
Liquid epitaxial growth methodInfo
- Publication number
- JPS58100420A JPS58100420A JP19966081A JP19966081A JPS58100420A JP S58100420 A JPS58100420 A JP S58100420A JP 19966081 A JP19966081 A JP 19966081A JP 19966081 A JP19966081 A JP 19966081A JP S58100420 A JPS58100420 A JP S58100420A
- Authority
- JP
- Japan
- Prior art keywords
- electric furnace
- length
- boat
- furnace
- inner diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/08—Heating of the reaction chamber or the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は液相エピタキシャル成長法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a liquid phase epitaxial growth method.
一般に、液相によるエピタキシャル成長法においては、
Ｇａのような原料メルトを収容するスライＦ式の成長用
ボートが用いられる。Generally, in the liquid phase epitaxial growth method,
A Sly F-type growth boat containing a raw material melt such as Ga is used.
ところで、エピタキシャル層の表面状態は上記ホードに
おける温度分布に大きく左右される。っま〕、ボートの
長さに対して電気炉の均熱長が十分長くないと、ボート
の各部の温度分布が一様にならず、エピタキシャル層の
膜厚が不均一になシ、また電気炉のヒータ内径が大きす
ぎる場合にも、やはシ温度分布が一様にならないため、
上記と同様に均一な膜が得られにくくなる。Incidentally, the surface condition of the epitaxial layer is greatly influenced by the temperature distribution in the hoard. ] If the soaking length of the electric furnace is not long enough for the length of the boat, the temperature distribution in each part of the boat will not be uniform, the thickness of the epitaxial layer will be uneven, and the electrical If the inner diameter of the furnace heater is too large, the temperature distribution will not be uniform.
Similarly to the above, it becomes difficult to obtain a uniform film.
この発明者等は、膜厚の均一なエピタキシャル層を得る
ための一定の条件を見いだすために、ボー）長や電気′
炉の均熱長などについて相関的に研究を続けた結果、ボ
ート長に対して一定の条件を満たし得る電気炉を用いる
ことによシ、エピタキシャル層の膜厚の均一化を図れる
という事実を知得し、この発明を完成した。In order to find certain conditions for obtaining an epitaxial layer with a uniform film thickness, the inventors
As a result of continuing research related to the soaking length of the furnace, we learned that by using an electric furnace that satisfies certain conditions for the boat length, it is possible to make the thickness of the epitaxial layer uniform. and completed this invention.
すなわち、この発明はボート長に電気炉のと一タ内径を
乗じ、これを１２炉の均熱長で除した値が８０未満とな
るように１２炉条件を設定することを特徴とするもので
、以下図面でこの発明を説明する。That is, this invention is characterized in that the 12-furnace conditions are set so that the value obtained by multiplying the boat length by the internal diameter of the electric furnace and dividing this by the soaking length of the 12-furnace is less than 80. The invention will be explained below with reference to the drawings.
第１図はこの発明に係る液相エピタキシャル成長法に使
用する電気炉の一例を示すものである。FIG. 1 shows an example of an electric furnace used in the liquid phase epitaxial growth method according to the present invention.
同図において、（１）は電気炉のヒータ、（２）は成長
用ボート、（３）は反応管、とはヒータ（１）の内径、
ｔは成長用ボー）（２）の長さ、シは電気炉の均熱長で
ある。In the figure, (1) is the heater of the electric furnace, (2) is the growth boat, (3) is the reaction tube, and is the inner diameter of the heater (1).
t is the length of the growth bow (2), and shi is the soaking length of the electric furnace.
上記構成の電気炉を使用して、Ｇ＆ムＢ 基板上にムｌ
Ｋ Ｇ ８４−エＡｓのエピタキシャル成長を行なわ
せ、その際の電気炉の均熱長りならびにヒータ内径ｄと
エピタキシャル層との相関関係を調べた結果を第２図に
示す、なお、この場合、成長用ボート（２）の長さを２
４０瓢に設定した。Using the electric furnace with the above configuration, mulch is coated on the G&MB substrate.
Figure 2 shows the results of epitaxial growth of KG 84-air As and the correlation between the soaking length of the electric furnace and the inner diameter d of the heater and the epitaxial layer. The length of the boat (2) is 2
I set it to 40 gourds.
第２図において、斜線部分の条件でエピタキシャル成長
を行なうと、エピタキシャル層の表面はなめらかで、膜
厚も均一となった。これに対し、斜線部分以外の条件で
エピタキシャル成長を行なうと、エピタキシャル層の膜
厚は不均一なものとなった。In FIG. 2, when epitaxial growth was performed under the conditions shown in the shaded area, the epitaxial layer had a smooth surface and a uniform thickness. On the other hand, when epitaxial growth was performed under conditions other than the shaded area, the thickness of the epitaxial layer became non-uniform.
上記斜線部分における電気炉の均熱長シとヒータ内径ａ
との関係式を第２図から求めると（１）式となる。Soaking length of electric furnace and heater inner diameter a in the shaded area above
If the relational expression between .
ここで、ボート（２）の長さｔが２４０−であるから。Here, since the length t of the boat (2) is 240-.
求める関係式は（２）式となる。The relational expression to be found is equation (2).
以上のように、ボー）（２）の長さＬと電気炉のヒータ
内径ｄと電気炉の均熱長りとが上Ｅ（２）式の関係を満
足するように設定して、エピタキシャル成長を行なうと
、エピタキシャル層の膜厚の均一化を図ることができる
。As described above, the epitaxial growth is performed by setting the length L of Bo)(2), the inner diameter d of the electric furnace heater, and the soaking length of the electric furnace to satisfy the relationship of Equation E(2) above. By doing so, the thickness of the epitaxial layer can be made uniform.
々お、第２図中、○印はエピタキシャル層の表面が平担
なものを、またＸ印はエピタキシャル層の表面に凹凸部
が存在したものをそれぞれ示している。In FIG. 2, the ◯ marks indicate that the surface of the epitaxial layer is flat, and the X marks indicate that the surface of the epitaxial layer has irregularities.
つぎに、この発明の詳細な説明する。Next, the present invention will be explained in detail.
実施例
電気炉の均熱長りを３００−電気炉の内径ｄを８０箇と
し、２４０−の成長用ボートを使用して。Example The soaking length of the electric furnace was set to 300 mm and the inner diameter d of the electric furnace was set to 80 points, and a 240 mm growth boat was used.
Ｇ＆ム−基板Ｈ（第３図）上にムＡｘＧａｔ−ｘＡｓ
（Ｑ≦Ｘ≦１）をエピタキシャル成長させた。なシナ１
電気炉の均熱は±１℃以内に制御した。Gat-xAs on the G & Mu board H (Fig. 3)
(Q≦X≦1) was epitaxially grown. nashina 1
The soaking temperature of the electric furnace was controlled within ±1°C.
ここで得られたエピタキシャル層ｅ心の表面状態を調べ
ると、第３図（４）に示すように平坦な表面状態であっ
た。When the surface condition of the epitaxial layer e obtained here was examined, it was found to be flat as shown in FIG. 3 (4).
比較例
電気炉の均熱長シを３００■とした以外は上記実施例の
場合と同じ条件でＧ＆五８基板■（第５図）上にムＬｘ
Ｇ＆１−ｘＡｓ （Ｑ≦Ｘ≦１）をエピタキシャル成長
させた。Comparative Example: A film was placed on a G&58 board (Fig. 5) under the same conditions as in the above example except that the soaking length of the electric furnace was set to 300 cm.
G&1-xAs (Q≦X≦1) was epitaxially grown.
ここで得られたエピタキシャル層−の表面状態を調べる
と、第３図中）Ｋ：示すようにエピタキシャル層−の表
面に凹凸部（２）が存在し、膜厚が不均一なものとなっ
た。Examining the surface condition of the epitaxial layer obtained here, it was found that as shown in Figure 3 (K), there were uneven parts (2) on the surface of the epitaxial layer, making the film thickness non-uniform. .
この結果から明らかなように、この発明の液相エピタキ
シャル成長法では、成長用ボート長に対して電気炉のと
−タ内径と均熱長とを特定することによって、半導体基
板上に所望の均一な膜厚のエピタキシャル層を成長させ
ることがで色ることが判った。As is clear from this result, in the liquid phase epitaxial growth method of the present invention, by specifying the inner diameter and soaking length of the electric furnace with respect to the length of the growth boat, the desired uniform growth can be achieved on the semiconductor substrate. It was found that growing a thicker epitaxial layer makes a difference.
第１図は液相エビ＃中シャ！成長に使用する電気炉の断
面図、第２図は成長用ボートの長さを一喜とした場合の
電気炉の均熱長とヒータ内径との関係を示す図、第３図
（４）、（Ｂ）はそれぞれ実施例および比較例のエピタ
キシャル成長層の各断面図である。
（１）・・・ヒータ、（２）・・・成長用ボー）、−・
・・半導体基板、ａ・・・ヒータ内径、Ｌ・・・成長用
ボート長、Ｌ・・・電気炉の均熱長。
なお、図中同一符号は同一もしくは相当部分を示す。
代理人 葛野信−（外１名）Figure 1 is liquid phase shrimp #mediumsha! A cross-sectional view of the electric furnace used for growth, Figure 2 is a diagram showing the relationship between the soaking length of the electric furnace and the inner diameter of the heater when the length of the growth boat is taken as one line, and Figure 3 (4). (B) is each cross-sectional view of the epitaxial growth layer of an example and a comparative example. (1)... Heater, (2)... Growth bow), -.
... Semiconductor substrate, a... Heater inner diameter, L... Growth boat length, L... Soaking length of electric furnace. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Shin Kuzuno (1 other person)
Claims (1)
た〕、成長用ボートの長さに１２炉のヒータ内径を乗じ
、その値を電気炉の均熱長で除した値が８０未満になる
ように電気炉条件を設定した液相エピタキシャル成長法
。(1) When growing an epitaxial layer on a semiconductor substrate, the value obtained by multiplying the length of the growth boat by the inner diameter of the heater of 12 furnaces and dividing that value by the soaking length of the electric furnace is less than 80. Liquid phase epitaxial growth method using electric furnace conditions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19966081A JPS58100420A (en) | 1981-12-09 | 1981-12-09 | Liquid epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19966081A JPS58100420A (en) | 1981-12-09 | 1981-12-09 | Liquid epitaxial growth method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58100420A true JPS58100420A (en) | 1983-06-15 |
Family
ID=16411513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19966081A Pending JPS58100420A (en) | 1981-12-09 | 1981-12-09 | Liquid epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58100420A (en) |
-
1981
- 1981-12-09 JP JP19966081A patent/JPS58100420A/en active Pending
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