JPS6411321A - Manufacture of silicon single-crystal thin film - Google Patents
Manufacture of silicon single-crystal thin filmInfo
- Publication number
- JPS6411321A JPS6411321A JP16820387A JP16820387A JPS6411321A JP S6411321 A JPS6411321 A JP S6411321A JP 16820387 A JP16820387 A JP 16820387A JP 16820387 A JP16820387 A JP 16820387A JP S6411321 A JPS6411321 A JP S6411321A
- Authority
- JP
- Japan
- Prior art keywords
- fluorosilane
- silane
- hydrogen
- substrate
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To obtain a good silicon single-crystalline thin film which is formed at a low temperature and contains no hydrogen therein, by mixing fluorosilane in hydrogen and a silane gas so as to form a mixed gas and next by introducing this gas to a surface of a single-crystalline substrate heated at a specific temperature or above and using a chemical vapor growth method to form a film. CONSTITUTION:Fluorosilane or fluorodisilane is effectively in use. SimH2m+2 (where (m) is 1 to 3) is used effectively for the silane. A ratio of a mixed gas is a supply flow rate (capacity) of a raw gas. A ratio of fluorosilane/silane is in the range of 0.1-50. A ratio of hydrogen/(fluorosilane+silane) is preferably in a region large to some degree. 600 deg.C or more is effectively used for a substrate temperature upon the forming of a film. A washed silicon substrate is heated at 1000 deg.C-1200 deg.C in a flow of hydrogen, and a clean substrate surface is exposed, and next the temperature of film formation is lowered to a prescribed of 600 deg.C or more. Thereafter a prescribed flow rate of the raw gas consisting of silane, fluorosilane, and hydrogen is made to flow and a CVD method is used to form a single-crystalline thin film on a substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62168203A JP2667664B2 (en) | 1987-07-06 | 1987-07-06 | Manufacturing method of silicon single crystal thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62168203A JP2667664B2 (en) | 1987-07-06 | 1987-07-06 | Manufacturing method of silicon single crystal thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6411321A true JPS6411321A (en) | 1989-01-13 |
JP2667664B2 JP2667664B2 (en) | 1997-10-27 |
Family
ID=15863699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62168203A Expired - Fee Related JP2667664B2 (en) | 1987-07-06 | 1987-07-06 | Manufacturing method of silicon single crystal thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2667664B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5422306A (en) * | 1991-12-17 | 1995-06-06 | Matsushita Electric Industrial Co., Ltd. | Method of forming semiconductor hetero interfaces |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101842875B1 (en) * | 2015-06-19 | 2018-03-28 | 주성엔지니어링(주) | Thin film deposition method and thin film deposition structure |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6330398A (en) * | 1986-07-23 | 1988-02-09 | Toshiba Corp | Epitaxy |
JPS6347920A (en) * | 1986-08-18 | 1988-02-29 | Hitachi Ltd | Manufacture of crystalline semiconductor device |
-
1987
- 1987-07-06 JP JP62168203A patent/JP2667664B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6330398A (en) * | 1986-07-23 | 1988-02-09 | Toshiba Corp | Epitaxy |
JPS6347920A (en) * | 1986-08-18 | 1988-02-29 | Hitachi Ltd | Manufacture of crystalline semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5422306A (en) * | 1991-12-17 | 1995-06-06 | Matsushita Electric Industrial Co., Ltd. | Method of forming semiconductor hetero interfaces |
Also Published As
Publication number | Publication date |
---|---|
JP2667664B2 (en) | 1997-10-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |