JPS6411321A - Manufacture of silicon single-crystal thin film - Google Patents

Manufacture of silicon single-crystal thin film

Info

Publication number
JPS6411321A
JPS6411321A JP16820387A JP16820387A JPS6411321A JP S6411321 A JPS6411321 A JP S6411321A JP 16820387 A JP16820387 A JP 16820387A JP 16820387 A JP16820387 A JP 16820387A JP S6411321 A JPS6411321 A JP S6411321A
Authority
JP
Japan
Prior art keywords
fluorosilane
silane
hydrogen
substrate
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16820387A
Other languages
Japanese (ja)
Other versions
JP2667664B2 (en
Inventor
Masahiko Mitsuzuka
Nobuhiro Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP62168203A priority Critical patent/JP2667664B2/en
Publication of JPS6411321A publication Critical patent/JPS6411321A/en
Application granted granted Critical
Publication of JP2667664B2 publication Critical patent/JP2667664B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a good silicon single-crystalline thin film which is formed at a low temperature and contains no hydrogen therein, by mixing fluorosilane in hydrogen and a silane gas so as to form a mixed gas and next by introducing this gas to a surface of a single-crystalline substrate heated at a specific temperature or above and using a chemical vapor growth method to form a film. CONSTITUTION:Fluorosilane or fluorodisilane is effectively in use. SimH2m+2 (where (m) is 1 to 3) is used effectively for the silane. A ratio of a mixed gas is a supply flow rate (capacity) of a raw gas. A ratio of fluorosilane/silane is in the range of 0.1-50. A ratio of hydrogen/(fluorosilane+silane) is preferably in a region large to some degree. 600 deg.C or more is effectively used for a substrate temperature upon the forming of a film. A washed silicon substrate is heated at 1000 deg.C-1200 deg.C in a flow of hydrogen, and a clean substrate surface is exposed, and next the temperature of film formation is lowered to a prescribed of 600 deg.C or more. Thereafter a prescribed flow rate of the raw gas consisting of silane, fluorosilane, and hydrogen is made to flow and a CVD method is used to form a single-crystalline thin film on a substrate.
JP62168203A 1987-07-06 1987-07-06 Manufacturing method of silicon single crystal thin film Expired - Fee Related JP2667664B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62168203A JP2667664B2 (en) 1987-07-06 1987-07-06 Manufacturing method of silicon single crystal thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62168203A JP2667664B2 (en) 1987-07-06 1987-07-06 Manufacturing method of silicon single crystal thin film

Publications (2)

Publication Number Publication Date
JPS6411321A true JPS6411321A (en) 1989-01-13
JP2667664B2 JP2667664B2 (en) 1997-10-27

Family

ID=15863699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62168203A Expired - Fee Related JP2667664B2 (en) 1987-07-06 1987-07-06 Manufacturing method of silicon single crystal thin film

Country Status (1)

Country Link
JP (1) JP2667664B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5422306A (en) * 1991-12-17 1995-06-06 Matsushita Electric Industrial Co., Ltd. Method of forming semiconductor hetero interfaces

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101842875B1 (en) * 2015-06-19 2018-03-28 주성엔지니어링(주) Thin film deposition method and thin film deposition structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6330398A (en) * 1986-07-23 1988-02-09 Toshiba Corp Epitaxy
JPS6347920A (en) * 1986-08-18 1988-02-29 Hitachi Ltd Manufacture of crystalline semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6330398A (en) * 1986-07-23 1988-02-09 Toshiba Corp Epitaxy
JPS6347920A (en) * 1986-08-18 1988-02-29 Hitachi Ltd Manufacture of crystalline semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5422306A (en) * 1991-12-17 1995-06-06 Matsushita Electric Industrial Co., Ltd. Method of forming semiconductor hetero interfaces

Also Published As

Publication number Publication date
JP2667664B2 (en) 1997-10-27

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