JPH0373950A - Manufacture of mask for exposing - Google Patents
Manufacture of mask for exposingInfo
- Publication number
- JPH0373950A JPH0373950A JP1209913A JP20991389A JPH0373950A JP H0373950 A JPH0373950 A JP H0373950A JP 1209913 A JP1209913 A JP 1209913A JP 20991389 A JP20991389 A JP 20991389A JP H0373950 A JPH0373950 A JP H0373950A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- stress
- substrate
- film
- pattern forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000000059 patterning Methods 0.000 claims abstract description 9
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 11
- 230000008602 contraction Effects 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000007796 conventional method Methods 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 239000006096 absorbing agent Substances 0.000 description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- 230000007261 regionalization Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
露光用のマスクの製造方法に関し、更に詳しく言えば、
パターンの転写の際、特にＸ線照射によるパターンの転
写の際に用い６ｎ光用マスクの製造方法に関し、
露光用マスク作成の際に発生する応力に起因するマスク
パターンの歪みを防止することができ、かつこのような
マスクを容易に作成できる露光用マスクの作成方法を提
供することを目的とし、基板の一表面上に下地膜を形成
する工程と、前記下地膜の表面に沿って予め第１の応力
が発生するように該下地膜の上にパターン形成膜を形成
する工程と、前記パターン形成膜をパターニングする工
程と、前記基板の他方の表面の周辺部に支持枠を取り付
ける工程と、前記支持枠をマスクとして前記基板を部分
的にエッチング・除去し、エツチング後に前記下地膜に
沿って現れる第２の応力を前記第１の応力により相殺す
る工程とを有することを含み構成する。[Detailed Description of the Invention] [Summary] Regarding the method of manufacturing a mask for exposure, in more detail,
Regarding the manufacturing method of a 6n light mask used when transferring a pattern, especially when transferring a pattern by X-ray irradiation, distortion of the mask pattern due to stress generated when creating the exposure mask can be prevented. The purpose of the present invention is to provide a method for creating an exposure mask that can easily create such a mask, and includes a step of forming a base film on one surface of a substrate, and a step of forming a first layer along the surface of the base film in advance. forming a pattern-forming film on the base film so as to generate stress; patterning the pattern-forming film; attaching a support frame to the periphery of the other surface of the substrate; The method includes the steps of partially etching and removing the substrate using the support frame as a mask, and canceling out a second stress appearing along the base film after etching with the first stress.
本発明は、露光用マスクの製造方法に関し、更に詳しく
言えば、パターンの転写の際、特にＸＬＡ照射によるパ
ターンの転写の際に用いる露光用マスクの製造方法に関
する。The present invention relates to a method of manufacturing an exposure mask, and more specifically, to a method of manufacturing an exposure mask used when transferring a pattern, particularly when transferring a pattern by XLA irradiation.
半導体装置のパターニングには、パターンの微細化に伴
い、Ｘ線照射によるパターン転写法が用いられている。2. Description of the Related Art As patterns become finer, a pattern transfer method using X-ray irradiation is used for patterning semiconductor devices.
そして、パターンの描かれた露光用マスクも精度の高い
ものが要望されている。There is also a demand for a highly accurate exposure mask with a pattern drawn thereon.
第４図（ａ）〜（ｆ）は、Ｘ線照射によるパターン転写
の際に用いる従来例の露光用マスクの作成方法を説明す
る断面図である。FIGS. 4(a) to 4(f) are cross-sectional views illustrating a conventional method of creating an exposure mask used in pattern transfer by X-ray irradiation.
まず、同図（ａ）に示すＳｔからなる基ｖｉｌ上に、ト
リクロルシラン／プロパン／水素ガスを用いた気相成長
法によりＳｉＣからなる下地膜２を形成する（同図（ｂ
））。First, a base film 2 made of SiC is formed on the base vil made of St shown in FIG.
)).
次に、同図（Ｃ）に示すように、スパッタ法によりＸ線
の吸収体のタンタルからなるパターン形成膜３を形成す
る。Next, as shown in FIG. 3C, a pattern forming film 3 made of tantalum, which is an X-ray absorber, is formed by sputtering.
次に、同図（ｄ）に示すように、ＣＩ／ＣＣｌ４ガスを
用いたＲＩＥ法によりパターン形成膜３を選択的にエツ
チングしてパターン３ａを形成する。Next, as shown in FIG. 3D, the pattern forming film 3 is selectively etched by RIE using CI/CCl4 gas to form a pattern 3a.
続いて、同図（ｅ）に示すように、ポリイミドからなる
接着剤をＳｉＣからなる支持枠４又は基板ｌに塗布し、
支持枠４と基板１とをはりあわせた後、温度２００″Ｃ
で加熱してポリイミドを固化し、支持枠４と基板ｌとを
固定する。Subsequently, as shown in FIG. 4(e), an adhesive made of polyimide is applied to the support frame 4 or the substrate l made of SiC,
After gluing the support frame 4 and the substrate 1 together, the temperature is 200″C.
The polyimide is solidified by heating to fix the support frame 4 and the substrate l.
その後、同図（ｆ）に示すように、Ｘ線を透過させる領
域の基板ｌを支持枠４をマスクとしてＨＦ／）ＩＮＯ，
の混合液を用いたエツチング法により除去して露光用マ
スクが充放する。Thereafter, as shown in FIG.
The exposure mask is charged and removed by an etching method using a mixed solution.
ところで、第４図（ｅ）に示すように、支持枠４と基板
１とを固着しているポリイミドを加熱して固化した後、
冷却する際、支持枠４とｘ＋Ｆｉｉとの熱膨張係数（そ
れぞれ４．７ ｘｌＯ−ｂ／ ’Ｃ，２，７ｘｌｏ−’
／ ’Ｃ）の差により支持枠４には圧縮応力が生じ、残
存する。By the way, as shown in FIG. 4(e), after the polyimide fixing the support frame 4 and the substrate 1 is heated and solidified,
When cooling, the thermal expansion coefficients of the support frame 4 and x+Fii (respectively 4.7 xlO-b/'C, 2, 7xlo-'
/ 'C), compressive stress is generated in the support frame 4 and remains.
従って、その後同図（ｆ）に示すように、基板１の一部
を除去すると支えがなくなり支持枠４は縮もうとする。Therefore, as shown in FIG. 5(f), when a part of the substrate 1 is removed, the support frame 4 loses its support and tends to shrink.
このとき、パターン形成Ｍ３が圧縮応力を持つ場合、又
は引っ張り応力を持つ場合であっても支持枠４に残存し
た圧縮応力より小さい場合には、その圧縮応力によりパ
ターン形成膜３が縮むので、パターン形成膜３のパター
ンが歪んでしまう、なお、図中、歪みが生じていない場
合の正常なパターン位置を二点鎖線で示す（第５図）。At this time, if the pattern forming M3 has a compressive stress, or even if it has a tensile stress, if it is smaller than the compressive stress remaining in the support frame 4, the pattern forming film 3 will shrink due to the compressive stress, so the pattern forming film 3 will shrink. The pattern of the formed film 3 is distorted. In the figure, the normal pattern position in the case where no distortion occurs is indicated by a two-dot chain line (FIG. 5).
また、逆にパターン形成１１１１３が支持枠４の圧縮応
力より大きい引っ張り応力を有する場合には、その引っ
張り応力によりパターン形成膜３が伸びるので、パター
ン形成膜３をパターニングして形成されたパターンが歪
んでしまう、このため、マスクパターンの精度が悪化し
てしまうという問題がある。Conversely, if the pattern formation 11113 has a tensile stress greater than the compressive stress of the support frame 4, the pattern formation film 3 will stretch due to the tensile stress, and the pattern formed by patterning the pattern formation film 3 will be distorted. Therefore, there is a problem that the precision of the mask pattern deteriorates.
この問題を解決するため、第６図（ａ）〜（ｃ）に示す
ように、まず、ＳｉＣからなる下地膜６とパターン形成
膜７とが形成されたＳｉからなる基板５を支持枠８に取
り付け（同図（ａ）Ｌその後Ｘ線を透過させる領域の基
板５を除去して支持枠８の応力を開放した（同図（ｂ）
）後、パターン形成膜７のパターニングを行っている（
同図（Ｃ））しかし、同図（ｂ）に示すように、ＳｉＣ
からなる下地膜６は数μ陽と薄いので、強度が十分でな
く、作業などを行う際、注意を怠るとしばしばマスクが
破壊するという問題がある。In order to solve this problem, as shown in FIGS. 6(a) to 6(c), first, a substrate 5 made of Si on which a base film 6 made of SiC and a pattern forming film 7 are formed is mounted on a support frame 8. Attachment ((a) in the same figure) Afterwards, the substrate 5 in the area through which X-rays are transmitted was removed to relieve stress on the support frame 8 ((b) in the same figure)
), the pattern forming film 7 is patterned (
(C)) However, as shown in (b) of the same figure, SiC
Since the base film 6 made of the above is thin, only a few microns thick, it does not have sufficient strength, and there is a problem that the mask will often break if care is not taken when working on it.
そこで本発明は、かかる従来例の問題点に鑑みてなされ
たものであり、露光用マスク作成の際に発生する応力に
起因するマスクパターンの歪みを防止することができ、
かつこのようなマスクを容易に作成できる露光用マスク
の製造方法を提供することを目的とするものである。The present invention has been made in view of the problems of the conventional example, and can prevent distortion of the mask pattern due to stress generated when creating an exposure mask.
Another object of the present invention is to provide a method for manufacturing an exposure mask that allows such a mask to be easily created.
上記課題は、基板の一表面上に下地膜を形成する工程と
、前記下地膜の表面に沿って予め第１の応力が発生する
ように該下地膜の上にパターン形成膜を形成する工程と
、前記パターン形成膜をパターニングする工程と、前記
基板の他方の表面の周辺部に支持枠を取り付ける工程と
、前記支持枠をマスクとして前記基板を部分的にエッチ
ング・除去し、エツチング後に前記下地膜に沿って現れ
る第２の応力を前記第１の応力により相殺する工程とを
有することを特徴とする露光用マスクの製造方法によっ
て達成される。The above-mentioned problems include a step of forming a base film on one surface of a substrate, and a step of forming a pattern forming film on the base film so that a first stress is generated in advance along the surface of the base film. , a step of patterning the pattern forming film, a step of attaching a support frame to the peripheral part of the other surface of the substrate, partially etching and removing the substrate using the support frame as a mask, and removing the base film after etching. This is achieved by a method of manufacturing an exposure mask characterized by comprising the step of offsetting the second stress appearing along the first stress with the first stress.
本発明の製造方法によれば、予め下地膜の表面に沿って
第１の応力が発生するようにパターン形成膜を形成し、
その後、基板の一部のエツチング後に下地膜の表面に沿
って現れる第２の応力を第１の応力により相殺している
。According to the manufacturing method of the present invention, a pattern forming film is formed in advance so that the first stress is generated along the surface of the base film,
Thereafter, the second stress that appears along the surface of the base film after etching a portion of the substrate is offset by the first stress.
このため、支持枠やパターン形成膜の伸縮を防止するこ
とが出来るので、パターン形成膜をパターニングして形
成されたマスクパターンを歪ませないようにすることが
できる。Therefore, expansion and contraction of the support frame and the pattern forming film can be prevented, so that the mask pattern formed by patterning the pattern forming film can be prevented from being distorted.
また、従来の場合と異なり、基板の一部を除去する工程
を製造工程の最後に行っているので、作業中、マスクの
十分な強度を保持することができ〔実施例〕
次に、図を参照しながら本発明の実施例について説明す
る。In addition, unlike conventional methods, the process of removing part of the substrate is performed at the end of the manufacturing process, so the mask can maintain sufficient strength during the work. Examples of the present invention will be described with reference to the following.
第１図（ａ）〜（ｆ）は、本発明の実施例のＸ線露光用
マスクの作成方法を説明する断面図である。FIGS. 1(a) to 1(f) are cross-sectional views illustrating a method for creating an X-ray exposure mask according to an embodiment of the present invention.
まず、同図（ａ）に示す厚さ約５００μ曙のＳｔからな
る基板９上に、トリクロルシラン／プロパン／水素ガス
を用いた気相成長法により温度１０００″Ｃの条件で膜
厚約２μｍのＳｉＣからなる下地膜１゜を形成する（同
図（ｂ））。First, a film with a thickness of about 2 μm was deposited on a substrate 9 made of St with a thickness of about 500 μm as shown in FIG. A 1° base film made of SiC is formed (FIG. 2(b)).
次に、後に基板９を支持枠に取り付けた後基板９の一部
のエッチング・除去後に下地膜１ｏの表面に沿って現れ
る応力（第２の応力）を相殺するため、この応力（第２
の応力）と大きさが等しく、かつ向きが逆の応力（第１
の応力）を下地膜１゜の表面に沿って発生させるように
パターン形成膜１１を形成する。いま、このパターン形
成膜１１の材料としてＸ線の吸収体である膜厚約１ｔｌ
１１のタンタルを用いている。Next, in order to offset the stress (second stress) that appears along the surface of the base film 1o after the substrate 9 is attached to the support frame and a part of the substrate 9 is etched and removed, this stress (second stress) is applied.
stress equal in magnitude and opposite in direction (first stress)
The pattern forming film 11 is formed so as to generate a stress of 1° along the surface of the base film 1°. Now, the material of this pattern forming film 11 is a film that is an X-ray absorber and has a thickness of about 1 tl.
11 tantalum is used.
ところで、第３図（ａ）、 （ｂ）は、本願発明者が
スパッタ法により堆積したタンタルからなるパターン形
成膜に発生する応力を調査した実験結果を示す図である
。By the way, FIGS. 3(a) and 3(b) are diagrams showing the results of an experiment conducted by the inventor of the present invention to investigate stress generated in a pattern forming film made of tantalum deposited by sputtering.
同図（ａ）は、Ａｒガス圧力を１０ｍＴｏｒｒ一定にし
て、印加パワーを変化させた場合のパターン形成膜に発
生する応力の変化の様子を示す図で、同図（ｂ）は印加
パワーを２ｋＷ一定にして、Ａｒガス圧力を変化させた
場合のパターン形成膜に発生する応力の変化の様子を示
す図である。同図（ｂ）において、Ａｒスパッタ有り、
無しは、Ｘ線の吸収体の成膜前に、ＳｉＣからなる下地
Ｊｌ！ＪＩＯに対して、０．２ｋＷで１０分間、Ａｒス
パッタを１テったか否かを示す。Figure (a) shows how the stress generated in the pattern forming film changes when the applied power is varied while keeping the Ar gas pressure constant at 10 mTorr, and Figure (b) shows how the applied power changes when the applied power is changed to 2 kW. FIG. 3 is a diagram showing how the stress generated in the pattern forming film changes when the Ar gas pressure is kept constant and changed. In the same figure (b), with Ar sputtering,
``No'' indicates that a base Jl made of SiC is applied before forming the X-ray absorber film. It shows whether or not Ar sputtering was applied to JIO for 10 minutes at 0.2 kW.
実験では、パターン形ｒＩｉ、膜を堆積する基板として
Ｓｉからなる基板を用い、堆積したときの基板のソリを
測定することにより、そのときのソリに相当する応力を
求めた。なお、応力の正の符号は引っ張り応力を示し、
負の符号は圧縮応力を示す。In the experiment, a substrate made of Si was used as a substrate on which a pattern rIi was deposited, and the stress corresponding to the warp was determined by measuring the warp of the substrate when the film was deposited. Note that the positive sign of stress indicates tensile stress,
A negative sign indicates compressive stress.
同図（ａ）に示すように、パターン形成膜は印加パワー
が小さい場合引っ張り応力が生じ、大きい場合は圧縮応
力が生じる。また、同図（ｂ）に示すように、ガス圧力
が小さい場合圧縮応力が生じ、大きい場合は引っ張り応
力が生じる。このように、パターン形成膜の応力ぼ印加
パワー及びガス圧力により広い範囲にわたって制御可能
である。As shown in FIG. 3(a), when the applied power is small, tensile stress is generated in the pattern-forming film, and when it is large, compressive stress is generated. Further, as shown in FIG. 2B, compressive stress occurs when the gas pressure is small, and tensile stress occurs when the gas pressure is large. In this way, the stress of the patterned film can be controlled over a wide range by applying power and gas pressure.
いま、第２の応力が約１ ｘｌＯ’ ｄｙｎｅ／ｃ−の
大きさを有する圧縮応力であることがあらかじめ調査さ
れている。It has now been previously investigated that the second stress is a compressive stress having a magnitude of about 1 xlO' dyne/c-.
従って、この調査結果と前記のパターン形成膜に発生す
る応力の実験結果とにより、例えば第３図（ａ）に示す
ように、Ａｒガス圧力１０ｍＴｏｒｒ 。Therefore, based on the results of this investigation and the experimental results of the stress generated in the pattern forming film, for example, as shown in FIG. 3(a), the Ar gas pressure was set at 10 mTorr.
印加パワー１ｋＷの条件でタンタルをスパッタすると、
このパターン形成膜１１は約Ｉ ＸＩＯ’ ｄｙｎｅ／
ｃｍ”の引っ張り応力を有することになる。When tantalum is sputtered under the condition of applied power of 1kW,
This pattern forming film 11 has approximately IXIO' dyne/
cm'' tensile stress.
次に、同図（ｄ）に示すように、ＣＩ／ＣＣｌ４ガスを
用いたＲＩＥ法によりパターン形成膜１１を選択的にエ
ツチングしてパターン形成膜を形成する。Next, as shown in FIG. 3D, the pattern forming film 11 is selectively etched by RIE using CI/CCl4 gas to form a pattern forming film.
続いて、同図（ｅ）に示すように、ポリイミドからなる
接着剤をＳｉＣからなる支持枠１２又は基板９に塗布し
て支持枠１２と基板９とをはりあわせた後、温度２００
℃で加熱してポリイミドを固化し、支持枠１２と基＋＋
ｆｆ９とを固定する。このとき、支持枠１２と基板９と
の熱膨張係数の差により、支持枠１２には圧縮応力が生
じ、残存する。Subsequently, as shown in FIG. 3(e), after applying an adhesive made of polyimide to the support frame 12 or the substrate 9 made of SiC and bonding the support frame 12 and the substrate 9 together, the temperature is set to 200°C.
The polyimide is solidified by heating at ℃, and the support frame 12 and base ++
ff9 is fixed. At this time, compressive stress is generated and remains in the support frame 12 due to the difference in thermal expansion coefficient between the support frame 12 and the substrate 9.
その後、同図（ｆ）に示すように、Ｘ線の透過する領域
の基板９を支持枠１２をマスクとしてＨＦ／）ＩＮＯ，
の混合液を用いたエツチング法により除去する。このと
き、基板９の支えがなくなり支持枠１２が縮まろうとし
て下地１１９１０の表面に沿って約Ｉ ＸＩＯ’ ｄｙ
ｎｅ／ｃ−の圧縮応力が現れるが、パターン形成膜１１
には予め下地膜１０の表面に沿って約Ｉ ＸＩＯ’ ｄ
ｙｎｅ／ｃ−の引っ張り応力が付与されているので、こ
れらの応力は互いに相殺する。このため、パターン形成
膜１１は伸びたり、縮んだりすることがないので、パタ
ーン形成膜１１をパターニングして形成されたパターン
形成膜は歪まない。これにより、精度のよいマスクパタ
ーンを作成できる。Thereafter, as shown in FIG.
It is removed by an etching method using a mixed solution of At this time, the support of the substrate 9 is lost and the support frame 12 is about to shrink, extending approximately IXIO' dy along the surface of the base 11910.
Compressive stress of ne/c- appears, but the pattern forming film 11
In advance, about IXIO' d is applied along the surface of the base film 10.
Since a tensile stress of yne/c- is applied, these stresses cancel each other out. Therefore, the pattern forming film 11 does not expand or contract, so the pattern forming film formed by patterning the pattern forming film 11 is not distorted. Thereby, a highly accurate mask pattern can be created.
また、同図（ｆ）に示すように、Ｘ線を透過させる領域
の基板９の除去を工程の最後に行っているので、マスク
の十分な強度を保持したまま作業を行うことができる。In addition, as shown in FIG. 3(f), since the area of the substrate 9 through which X-rays are transmitted is removed at the end of the process, the work can be carried out while maintaining sufficient strength of the mask.
これにより、従来と異なり、特に十分な注意を払うこと
なく、容易にマスクを作成することができる。Thereby, unlike the conventional method, a mask can be easily created without paying special attention.
このようにして、Ｘ線露光用マスクが完成する。In this way, the X-ray exposure mask is completed.
このときの上面図を第２図に示す、同図において、第１
図（ａ）〜（ｆ）に示す符号と同一のものは、第１図（
ａ）〜（ｆ）に示すものと同一のものを示す。The top view at this time is shown in FIG. 2. In the same figure, the first
The same symbols as those shown in Figures (a) to (f) are shown in Figure 1 (
The same items as those shown in a) to (f) are shown.
なお、実施例ではＸ線の吸収体としてタンタルを用いた
が、タングステン（Ｗ）や金（Ａｕ）などを用いても本
発明を適用できる。Although tantalum was used as the X-ray absorber in the embodiment, the present invention can also be applied to tungsten (W), gold (Au), or the like.
以上のように、本発明の製造方法によれば、基板の一部
のエッチング・除去後に下地膜の表面に沿って現れる第
２の応力を、下地膜の表面に沿うように予めパターン形
成膜に付与された第１の応力により相殺しているので、
支持枠やパターン形成膜の伸縮を防止することができる
。従って、このパターン形成膜をパターニングして形成
されたマスクパターンの歪みを防止することができる。As described above, according to the manufacturing method of the present invention, the second stress that appears along the surface of the base film after etching/removal of a part of the substrate is applied to the pattern forming film in advance along the surface of the base film. Since it is offset by the applied first stress,
Expansion and contraction of the support frame and pattern forming film can be prevented. Therefore, distortion of the mask pattern formed by patterning this pattern forming film can be prevented.
これにより、精度のよいマスクパターンの作成が可能と
なる。This makes it possible to create a highly accurate mask pattern.
また、支持枠をマスクとして基板をエッチング・除去す
る工程を、製造工程の最後に行っているので、十分な強
度をマスクに持たせたまま作業を行うことができる。Furthermore, since the step of etching and removing the substrate using the support frame as a mask is performed at the end of the manufacturing process, the work can be carried out while the mask has sufficient strength.
これにより、従来と異なり、特に十分な注意を払うこと
なく、容易にマスクを作成することができる。Thereby, unlike the conventional method, a mask can be easily created without paying special attention.
第１図は、本発明の実施例のＸ線露光用マスクの作成方
法を説明する断面図、
第２図は、Ｘ線露光用マスクの上面図、第３図は、スパ
ッタ法により形成されたパターン形成膜の応力とスパッ
タ条件との関係を示す図、第４図は、従来例のｘｉｎ光
用マスクの作成方法を説明する断面図、
第５図は、従来例の問題点を説明する図、第６図は、他
の従来例のマスクの作成方法を説明する断面図である。
〔符号の説明〕
１．５．９・・・基板、
２．６．１０・・・下地膜、
３．７．１１・・・パターン形成膜、
３ａ、ｌｌａ・・・パターン、
４．８．１２・・・支持枠、FIG. 1 is a cross-sectional view illustrating a method for creating an X-ray exposure mask according to an embodiment of the present invention, FIG. 2 is a top view of an X-ray exposure mask, and FIG. A diagram showing the relationship between the stress of the pattern forming film and sputtering conditions, FIG. 4 is a cross-sectional diagram illustrating the conventional method of creating a mask for xin light, and FIG. 5 is a diagram illustrating the problems of the conventional method. , FIG. 6 is a cross-sectional view illustrating another conventional mask manufacturing method. [Explanation of symbols] 1.5.9...Substrate, 2.6.10... Base film, 3.7.11... Pattern forming film, 3a, lla... Pattern, 4.8. 12... Support frame,
Claims (1)
の表面に沿って予め第１の応力が発生するように該下地
膜の上にパターン形成膜を形成する工程と、 前記パターン形成膜をパターニングする工程と、前記基
板の他方の表面の周辺部に支持枠を取り付ける工程と、 前記支持枠をマスクとして前記基板を部分的にエッチン
グ・除去し、エッチング後に前記下地膜に沿って現れる
第２の応力を前記第１の応力により相殺する工程とを有
することを特徴とする露光用マスクの製造方法。[Claims] A step of forming a base film on one surface of a substrate, and forming a pattern forming film on the base film so that a first stress is generated in advance along the surface of the base film. a step of patterning the pattern forming film; a step of attaching a support frame to a peripheral portion of the other surface of the substrate; partially etching and removing the substrate using the support frame as a mask; A method of manufacturing an exposure mask, comprising the step of offsetting a second stress appearing along a base film with the first stress.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1209913A JPH0373950A (en) | 1989-08-14 | 1989-08-14 | Manufacture of mask for exposing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1209913A JPH0373950A (en) | 1989-08-14 | 1989-08-14 | Manufacture of mask for exposing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0373950A true JPH0373950A (en) | 1991-03-28 |
Family
ID=16580730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1209913A Pending JPH0373950A (en) | 1989-08-14 | 1989-08-14 | Manufacture of mask for exposing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0373950A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010102356A (en) * | 2002-03-29 | 2010-05-06 | Hoya Corp | Method of producing mask blank and method of producing transfer mask |
| TWI399123B (en) * | 2004-07-23 | 2013-06-11 | Dainippon Printing Co Ltd | The organic EL element manufacturing step is a metal sheet mechanism |
| KR101696428B1 (en) * | 2016-01-13 | 2017-01-16 | 조민규 | Multiple folding bag |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59129851A (en) * | 1983-01-17 | 1984-07-26 | Nec Corp | Preparation of x-ray exposure mask |
| JPS62216325A (en) * | 1986-03-18 | 1987-09-22 | Fujitsu Ltd | Manufacture of x-ray mask |
| JPS6384114A (en) * | 1986-09-29 | 1988-04-14 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask |
| JPS63136621A (en) * | 1986-11-28 | 1988-06-08 | Dainippon Printing Co Ltd | X-ray exposure mask |
| JPS63251083A (en) * | 1987-04-06 | 1988-10-18 | Shiyouda Shoyu Kk | Yeast cell wall dissolving enzyme and extraction of yeast cell component using said enzyme |
| JPS6474721A (en) * | 1987-09-17 | 1989-03-20 | Toshiba Corp | Manufacture of x-ray mask |
-
1989
- 1989-08-14 JP JP1209913A patent/JPH0373950A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59129851A (en) * | 1983-01-17 | 1984-07-26 | Nec Corp | Preparation of x-ray exposure mask |
| JPS62216325A (en) * | 1986-03-18 | 1987-09-22 | Fujitsu Ltd | Manufacture of x-ray mask |
| JPS6384114A (en) * | 1986-09-29 | 1988-04-14 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask |
| JPS63136621A (en) * | 1986-11-28 | 1988-06-08 | Dainippon Printing Co Ltd | X-ray exposure mask |
| JPS63251083A (en) * | 1987-04-06 | 1988-10-18 | Shiyouda Shoyu Kk | Yeast cell wall dissolving enzyme and extraction of yeast cell component using said enzyme |
| JPS6474721A (en) * | 1987-09-17 | 1989-03-20 | Toshiba Corp | Manufacture of x-ray mask |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010102356A (en) * | 2002-03-29 | 2010-05-06 | Hoya Corp | Method of producing mask blank and method of producing transfer mask |
| TWI399123B (en) * | 2004-07-23 | 2013-06-11 | Dainippon Printing Co Ltd | The organic EL element manufacturing step is a metal sheet mechanism |
| TWI422270B (en) * | 2004-07-23 | 2014-01-01 | Dainippon Printing Co Ltd | Method and apparatus for sealing sheet of metal thin plate for manufacturing step of organic EL element |
| KR101696428B1 (en) * | 2016-01-13 | 2017-01-16 | 조민규 | Multiple folding bag |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4931717B2 (en) | Manufacturing method of pellicle for lithography | |
| JPS63110634A (en) | Mask for x-ray stepper | |
| JPH01112728A (en) | Manufacture of sic mask supporter for x-ray lithography mask | |
| US4837123A (en) | Mask structure for lithography, method of preparation thereof and lithographic method | |
| JPH0373950A (en) | Manufacture of mask for exposing | |
| JPH0963912A (en) | Manufacture of joined substrate | |
| JPH0992602A (en) | Mask structure and production thereof | |
| US20030228418A1 (en) | Replication of nanoperiodic surface structures | |
| JP2797190B2 (en) | Manufacturing method of X-ray exposure mask | |
| JPH0345526B2 (en) | ||
| JP2000003845A (en) | Manufacture of mask for x-ray exposure | |
| JP2846073B2 (en) | Method for producing thin film and method for producing X-ray mask | |
| JP2895037B2 (en) | Mask for manufacturing semiconductor element and method for manufacturing the same | |
| JPH04137718A (en) | Manufacture of x-ray mask | |
| JP7391792B2 (en) | Template, template manufacturing method, and semiconductor device manufacturing method | |
| JPH0198226A (en) | Mask for x-ray exposure | |
| KR0179907B1 (en) | X-ray mask and its manufacturing method | |
| JP2791196B2 (en) | X-ray mask structure, method of manufacturing the same, and X-ray exposure method | |
| JPS61269313A (en) | Manufacture of x-ray mask | |
| JPS62281324A (en) | X-ray mask and manufacture thereof | |
| JP3451431B2 (en) | X-ray exposure mask and method of manufacturing the same | |
| JP2721586B2 (en) | X-ray mask structure manufacturing method | |
| JPH05291121A (en) | X-ray mask and its manufacture and manufacture of semiconductor device | |
| JP3221453B2 (en) | Method for manufacturing X-ray exposure mask and blank used therefor | |
| JP3044742B2 (en) | X-ray exposure mask and method of manufacturing the same |