JPS63136621A - X-ray exposure mask - Google Patents
X-ray exposure maskInfo
- Publication number
- JPS63136621A JPS63136621A JP61283748A JP28374886A JPS63136621A JP S63136621 A JPS63136621 A JP S63136621A JP 61283748 A JP61283748 A JP 61283748A JP 28374886 A JP28374886 A JP 28374886A JP S63136621 A JPS63136621 A JP S63136621A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- thin film
- pattern
- film
- transparent thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 38
- 239000010408 film Substances 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 239000002131 composite material Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 238000010894 electron beam technology Methods 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 230000006835 compression Effects 0.000 abstract 4
- 238000007906 compression Methods 0.000 abstract 4
- 230000005540 biological transmission Effects 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は微細パターンを高精度に転写するＸ線露光装置
書−用いるＸ線露光用マスク（：関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an X-ray exposure mask used in an X-ray exposure apparatus for transferring fine patterns with high precision.
Ｘ線露光法は、波長ダ〜ｊＯＡの軟Ｘ線を線源とし、サ
ブミクロン微細パターンの転写が可能な技術として知ら
れる。The X-ray exposure method is known as a technique that uses soft X-rays with a wavelength of d~jOA as a radiation source and is capable of transferring submicron fine patterns.
従来からのＸ線露光用マスクの例としては、第３図に示
すように、引張り力を有するＸ線透過性薄膜コと、この
薄膜上（：形成されたＸ線吸収性パターン３と、Ｓｌウ
ニ八へ板の一部を除去してなる支持枠ダと、Ｓ１ウエ八
基板を部分的に除去する際に使用する保＠膜７からなる
Ｘ線露光用マスクｌがある。As an example of a conventional X-ray exposure mask, as shown in FIG. There is an X-ray exposure mask 1 consisting of a support frame formed by removing a part of the S1 wafer board and a protective film 7 used when partially removing the S1 wafer board.
一般）；、Ｘ線吸収性パターンのもつ応力によりマスク
歪が発生することが知られ、例えばに、Ｈ，Ｍｕｌｌ＠
ｒ、Ｐ、Ｔｉ５ｈｅｒ およびＷ。It is known that mask distortion occurs due to stress in X-ray absorbing patterns; for example, H, Mull@
r, P, Ti5her and W.
Ｗｌｎｄｂｒａｅｋ＠ｌ二よる［吸収体応力のＸ線マス
フ精度に及ぼす影響（Ｉｎｆｌｕ＠ｎｃｅ ｏｆａｂ
ｓｏｒｂｓｒ ５ｔｒｅｓｓ ｏｕｔｈ＠ ｐｒｅ
−ｅｌｓｌｏｎ’ ｏｆ ｘ−ｒａｙ ｍａｓｋｓ
）Ｊ（Ｊｏｕｎａｌ ｏｆ Ｖａｃｕｕｍ ａ
ｎｄ ５ｃｉ−ｓｕａ＠ Ｔｅｃｈｎｏｌｏｇｙ、Ｂ
４（（１）、Ｊａｎ、／Ｆ’ｅｂ。Wlndbraek@l2 [Influence of absorber stress on X-ray mass flow accuracy (Influ@nce ofab
sorbsr 5tress outer @ pre
-elslon' of x-ray masks
) J (Journal of Vacuum a)
nd 5ci-sua @ Technology, B
4 ((1), Jan, /F'eb.
／９１６．ｐコ３０）に述べられている。/916. pco 30).
したがりて、従来から、Ｘ線吸収性パターンの応力によ
るマスク歪が大きく、超ＬＳＩデバイス用のＸ線露光用
マスクシニ要求される位置精度または長ピツチ精度を満
さない場合がしばしば生じていた。Therefore, in the past, mask distortion due to stress in the X-ray absorbing pattern was large, and the position accuracy or long pitch accuracy required for X-ray exposure masks for VLSI devices was often not satisfied.
そこで本発明が解決しようとする問題点は、Ｘ線吸収性
パターンの応力によるマスク歪を防止したＸ線露光用マ
スクを提供することにある。Therefore, the problem to be solved by the present invention is to provide an X-ray exposure mask that prevents mask distortion due to stress in the X-ray absorbing pattern.
本発明者は上記の問題点を解決すべく研究の結果、Ｘ線
透過性薄膜の一面側には圧縮力を有するＸ線吸収性パタ
ーンが設けられ、かつ該Ｘ線透過性薄膜の他面側（：は
支持枠が設けられているＸ線露光用マスクにおいて、該
Ｘ、ＩＩ吸収性パターン下面のＸ線透過性薄膜領域を凸
とし、この凸部分のＸ線透過性薄膜と該Ｘ線吸収性パタ
ーンとの合成引張り力とＸ線透過領域のＸ線透過性薄膜
の引張り力が等しくなるように、凸部分を形成すること
により、位置精度および長ピツチ精度の低下を防止する
ことが可能であることを見い出し、かかる知見（：もと
づいて本発明を完成させたものである。As a result of research to solve the above-mentioned problems, the present inventor has provided an X-ray absorbing pattern having a compressive force on one side of an X-ray transparent thin film, and the other side of the X-ray transparent thin film. (:: In an X-ray exposure mask provided with a support frame, the X-ray transparent thin film region on the lower surface of the X, II absorptive pattern is made convex, and the X-ray transparent thin film in this convex part and the X-ray absorbing By forming the convex portion so that the combined tensile force with the X-ray pattern and the tensile force of the X-ray transparent thin film in the X-ray transparent area are equal, it is possible to prevent a decrease in positional accuracy and long pitch accuracy. The present invention was completed based on this discovery.
即ち、本発明は、「Ｘ線透過性薄膜の一面にＸ線吸収性
パターンが設けられ、且つ他面側に支持枠が設けられて
いるＸ線露光用マスクにおいて、Ｘ線吸収性パターンの
下面のＸ線透過性薄膜領域をＸ線透過領域に対応するＸ
線透過性薄膜よりも厚膜１：形成し、且つＸｌｆＭ吸収
性パターンの下面１二対応するＸ線透過性薄膜部分の膜
厚、及びＸ線透過領域：：対応するＸ線透過性薄膜部分
の膜厚を、Ｘ線吸収性パターンの下面に対応するＸ線透
過性薄膜部分の引張り力とＸ線吸収性パターンの圧縮力
の合成力と、Ｘ線透過領域に対応するＸ線透過性薄膜部
分の引張り力がほり等しくなるような膜厚としたことを
特徴とするＸ線露光用マスク。」を要旨とするものであ
る。That is, the present invention provides ``an X-ray exposure mask in which an X-ray absorbing pattern is provided on one side of an X-ray transparent thin film and a support frame is provided on the other side; The X-ray transparent thin film area of
Thicker than the radiolucent thin film 1: Thickness of the XlfM absorbing pattern lower surface 12 corresponding to the X-ray transmissive thin film portion, and X-ray transparent region:: The film thickness is determined by the combined force of the tensile force of the X-ray transparent thin film part corresponding to the lower surface of the X-ray absorbing pattern and the compressive force of the X-ray absorbing pattern, and the X-ray transparent thin film part corresponding to the X-ray transparent area. An X-ray exposure mask characterized by having a film thickness such that the tensile forces of the two are equal to each other. ” is the gist.
而して本明細？（＝おいて「引張り力」および「圧縮力
」とは、薄膜全体としてそれぞれ、引張り状態にある単
位幅当りの全応力〔ｄｙｎｋＬ〕、および圧縮状態；二
ある単位幅当りの全応力Ｃｄｙｎ／ａｍ ）を意味する
ものである。And the main details? (In =, "tensile force" and "compressive force" refer to the total stress per unit width in the tensile state [dynkL] and the total stress per unit width in the compressed state; ).
次に本発明においてＸ線透過性薄膜として、例えばＣＶ
Ｄ法やスパッタリング法により、８１ワエ八基板の一面
上に形成したｓｌｓ Ｎ４ ｅ Ｓ ｔ Ｎ。Next, in the present invention, as an X-ray transparent thin film, for example, CV
slsN4eStN was formed on one surface of the 81W substrate by the D method or the sputtering method.
８ｉＣ，ＢＮ等の単層もしくは複合層からなる引張り力
を有する厚０．−〜６μｍの薄膜を適用し得る。8iC, BN, etc. single layer or composite layer with tensile strength and thickness 0. -A thin film of ~6 μm can be applied.
次にＸｌ１Ｉ吸収性パターンとして、Ａ ｕ 、 Ｗ。Next, A u, W as the Xl1I absorption pattern.
Ｔａ、Ｍｏ等の重金属を主成分とした厚さ０． ／〜／
、ｊμｍのｘｇ吸収性パターン材料層をＸ線透過性薄膜
上に蒸着法、スパッタリング法またはＣＶＤ法により形
成した後にドライエツチングしてなるものか、或いはＸ
線透過性薄膜上に例えば厚さｓ−ｏ〜−〇ＯＡのＣｒ、
Ｎｉ、Ｔｉ等と厚さ一〇〇〜ｌ、００にのＡｕを順次蒸
着もしくはスパッタリングしてメッキ下地層を形成した
後１：、このメッキ下地層表面をＸ線吸収性パターンに
対応する部分が開口したレジストパターンで被覆してか
らレジストパターンの開口部にＡｕメッキして、しかる
のちレジストパターンを除去してなるものを適用できる
。なお、Ｘ線吸収性パターン形成後にメッキ下地層の不
ｌ！部は例えばＡｒガスを用いたスパッタエツチング法
により容易に除去できる。Thickness: 0.0mm, mainly composed of heavy metals such as Ta and Mo. ／〜／
, jμm of xg absorbing pattern material layer is formed on an X-ray transparent thin film by vapor deposition, sputtering, or CVD method, and then dry etched, or
For example, Cr having a thickness of s-o to -0 OA on a radiation-transparent thin film,
After forming a plating base layer by sequentially vapor depositing or sputtering Ni, Ti, etc. and Au to a thickness of 100 to 1,000 mm, the surface of this plating base layer is coated with a portion corresponding to the X-ray absorbing pattern. It is possible to apply a method in which the resist pattern is covered with an open resist pattern, the openings of the resist pattern are plated with Au, and then the resist pattern is removed. It should be noted that after forming the X-ray absorptive pattern, the plating base layer may be damaged! The portion can be easily removed by sputter etching using Ar gas, for example.
Ｘ線吸収性パターンの下面のＸ線透過性薄膜領域をＸ線
透過領域（＝対応するＸ＃透過性薄膜よりも厚膜に形成
し、且つＸＨ吸収性パターンの下面に対応するＸ線透過
性薄膜部分の膜厚。The X-ray transparent thin film region on the lower surface of the X-ray absorbing pattern is formed into an X-ray transparent region (= thicker than the corresponding X# transparent thin film, and the X-ray transparent thin film region corresponding to the lower surface of the XH absorbing pattern Film thickness of thin film part.
及びＸ線透過領域に対応するＸ線透過性薄膜部分の膜厚
を、Ｘ線吸収性パターンの下面に対応するＸ線透過性薄
膜部分の引張り力とＸ線吸収性パターンの圧縮力の合成
力と、Ｘ線透過領域に対窓するＸ線透過性薄膜部分の引
張り力がはり等しくなるような膜厚とすることにより、
Ｘ”線吸収性パターンの圧縮力によるマスク歪が防止さ
れる。and the film thickness of the X-ray transparent thin film portion corresponding to the X-ray transparent area, and the combined force of the tensile force of the X-ray transparent thin film portion corresponding to the lower surface of the X-ray absorbing pattern and the compressive force of the X-ray absorbing pattern. By setting the film thickness so that the tensile forces of the X-ray transparent thin film portion opposite to the X-ray transparent area are equal,
Mask distortion due to compressive force of the X''-ray absorbing pattern is prevented.
上記の本発明について、以下に実施例をあげて更に具体
的に説明する。The above-mentioned present invention will be explained in more detail by giving examples below.
第１図（ａ）〜（ｄ）に、本発明における一実施例の製
造工程を概略断面図）：よりて示す。なお、第１図（ｄ
）は、この実施例Ｃ二より製造されたＸ線露光用マスク
の断面図である。FIGS. 1(a) to 1(d) are schematic sectional views showing the manufacturing process of an embodiment of the present invention. In addition, Fig. 1 (d
) is a cross-sectional view of the X-ray exposure mask manufactured in Example C2.
先ず、第１図（ａ） Ｅ示すように、厚さ０．３〜ｌＩ
朋で鏡面研磨されたＳｉクエ八へ板６上の両面１： Ｃ
Ｖ Ｄ装置１：より引張り応力へρＸ ／ Ｏ’ｄｙｎ
／屋を有する厚さ３μｍの８１Ｎ＠を形成して、−面側
をＸ線透過性薄膜コと他面側にフォトレジストパターン
をマスクにして不要部をエツチング除去することにより
保穫膜５を形成した。First, as shown in Fig. 1(a) E, the thickness is 0.3~lI.
Both sides 1 on the Si Kuehachi plate 6 mirror-polished by my friend: C
V D device 1: more tensile stress ρX/O'dyn
A protective film 5 is formed by forming a 81N film with a thickness of 3 μm and removing unnecessary parts by etching and removing unnecessary parts using an X-ray transparent thin film on the negative side and a photoresist pattern on the other side as a mask. Formed.
次に、第１図（ｂ）に示すよう）二、Ｘ線透過性薄膜コ
上にＷ膜もしくはＴａｇからなり圧縮応力／ Ｘ ／
０ ” ｄｎｙ／ｃＩ！ｔを有した厚さ／ｆｉｍのＸ線
吸収性パターン材料屑をＣＶＤ法もしくはスパッタリン
グ法により形成後、例えば通常の電子線露光法等（＝よ
りレジストパターンを形成してそれをマスクにドライエ
ツチングすることによりＸ線吸収性パターン３を形成し
た。Next, as shown in FIG. 1(b), a W film or a tag is placed on the X-ray transparent thin film and compressive stress /
After forming X-ray absorptive pattern material scraps having a thickness of 0 ” dny/cI!t by a CVD method or a sputtering method, a resist pattern is formed by, for example, a normal electron beam exposure method, An X-ray absorbing pattern 3 was formed by dry etching using a mask.
さらに、ＳＩＮとＷもしくはＴａとの高選択エツチング
が可能な、例えばＣ１Ｔ６ ｔ Ｃａ ’８等のガスを
用いた反応性イオンエツチングにより、Ｗ＠もしくはＴ
１膜からなるＸ線吸収性パターン３をマスクにＳｉＮ膜
からなるｘｍ透過性薄ｇＩ！−を深さ０．７μｍだけエ
ツチング除去した状態を第１図（ｅ）に示す。なお、こ
こでエツチングマスクとしたＸ線吸収性パターン３は、
高選択ドライエツチングしたため、その膜減りは十分小
さく無視できる。Furthermore, by reactive ion etching using a gas such as C1T6tCa'8, which allows highly selective etching of SIN and W or Ta, W@ or T
xm-transparent thin gI made of SiN film using X-ray absorbing pattern 3 made of one film as a mask! FIG. 1(e) shows the state in which - has been removed by etching to a depth of 0.7 μm. Note that the X-ray absorbing pattern 3 used as an etching mask here is
Due to highly selective dry etching, the film loss is sufficiently small that it can be ignored.
ここで、Ｘ線吸収性パターンの圧縮力＝／Ｘｉ Ｑ’（
ｄｙｎ／ｃ＋＋１） ＠ ／ Ｘ ｉ ｏ−’Ｃｃｎ〕
＝ ｔ ｘ／ ０’（ｄｙｎ／ｒｘ〕とその下面のＸ線
透過性薄膜の引張り力＝７，０×１０・（ｄ ｙ ｎ／
ｃｄ） ＠Ｊ、θＸ／ ０−’ （ＣＩＩＬＩ ＝Ｊ、
ＯＸ ／ ０” （ｄｙｎ／ｃ！ｆＬｌとの合成引張り
力＝コ、ｔｔ ｘ ｔ ｏ” （ａｙｎ／ｃｍ）であり
、またＸ線透過領域において、Ｘ線透過性薄膜の引張り
力＝１．ｏｘｔ １（ｄｙｎ／ｍ〕＊コ、？Ｘ１０−’
（ｃｍ）＝２．９×１ＯＩＣｄｙｎ／ｃ！ＩＬ〕である
から、この一つの引張り力が釣り合うよう４；、Ｘ線透
過領域のＸ？ＩＱ透過膜が薄く形成されている。Here, the compressive force of the X-ray absorbing pattern = /Xi Q'(
dyn/c++1) @ / Xio-'Ccn]
= t x/ 0' (dyn/rx) and the tensile force of the X-ray transparent thin film on the lower surface = 7,0
cd) @J, θX/ 0-' (CIILI = J,
OX / 0" (combined tensile force with dyn/c!fLl = ko, tt x t o" (ayn/cm), and in the X-ray transparent region, the tensile force of the X-ray transparent thin film = 1.oxt 1 (dyn/m) *ko, ?X10-'
(cm)=2.9×1OICdyn/c! IL], so that this one tensile force is balanced 4;, X? in the X-ray transparent region. The IQ permeable membrane is formed thinly.
最後１；、保＠膜りで保護され【いないＳ１ウエハ基板
６の部分を裏面からエツチング除去して、第１図（ｄ）
に示すように窓！およびＳｌからなる支持枠ダを形成し
た。Finally, the portion of the S1 wafer substrate 6 that is not protected by the protective film is removed by etching from the back side, as shown in Figure 1(d).
window as shown! A support frame consisting of and Sl was formed.
このエツチングの際、Ｘ線吸収性パターンを保護するた
めに、テフロン、０リング等からなる治具を使用し、エ
ツチング液としては、２０〜３０％ＫＯＨ水溶液やＨＦ
：ＨＮＯ，：ＣＨ，Ｃ００Ｈ＝／ ： 、７ ： ／の
ＨＦ系混合液を使用することにより良好に８１ウニ八基
板の一部をエツチング除去できる。During this etching, in order to protect the X-ray absorbing pattern, a jig made of Teflon, O-ring, etc. is used, and the etching solution is a 20-30% KOH aqueous solution or HF.
By using an HF-based mixed solution of :HNO, :CH,C00H=/ : , 7 : /, a part of the 81 Unihachi substrate can be successfully etched away.
上述のようにして、Ｘ線透過性薄嘆コの一部にｘＩＩＩ
吸収性パターンＪと他面に支持枠弘があり、かつ上記Ｘ
線吸収性パターン下面のＸ線透過性薄膜が凸である第１
図（ｄ） ｌ：示すようなＸ線露光用マスクｌが得られ
た。As described above, xIII is applied to a portion of the X-ray transparent tube.
There is an absorbent pattern J and a support frame on the other side, and the above X
The first layer has a convex X-ray transparent thin film on the lower surface of the radiation-absorbing pattern.
Figure (d) 1: An X-ray exposure mask 1 as shown was obtained.
上記実施例のマスクを用いてＸ線露光を行なりたところ
、位置精度および長ピツチ精度の高い画像を焼き付ける
ことができた。When X-ray exposure was performed using the mask of the above example, an image with high positional accuracy and long pitch accuracy could be printed.
その他の実施例として第２図に示すように、上記実施例
で得られたＸ線露光用マスクにパイレックスガラス等か
らなる補強枠ざを、例えばエポキシ系接着剤層デを介し
て、支持枠ダに固着してなるＸ線露光用マスクｌがある
。As another example, as shown in FIG. 2, a reinforcing frame made of Pyrex glass or the like is attached to the support frame via an epoxy adhesive layer, for example, to the X-ray exposure mask obtained in the above example. There is an X-ray exposure mask l which is fixed to a.
以上詳記したとおり、本発明にかかるＸ＃Ｗ光用マスク
は、ＸｆｆＩＪ吸収性パターンのもつ圧縮力によって生
じるマスク全を防止しているので、位置精度および長ピ
ツチ精度の高いＸ線露光が可能である。As detailed above, the X#W light mask according to the present invention prevents the entire mask from being generated due to the compressive force of the XffIJ absorbing pattern, making it possible to perform X-ray exposure with high positional accuracy and long pitch accuracy. It is.
第１図（、）〜（ｄ）は本発明の実施例の製造工程を示
す断面図、第２図は本発明の他の実施例を示す断面図、
第３図は従来のＸＭＢ光用マスクを説明するための断面
図である。
／・・・・・Ｘ線露光用マスク
コ・・・・・Ｘ線透過性薄膜
３・・・・・Ｘ線吸収性パターン
ダ・・φ・・支持枠
！・・・・・窓
６番・ｅ・・Ｓ１ウエハ基板
り・・・・・保護膜
ざ・・・・・補強枠
ｔ・・・・・接着剤層
特許出願人 大日本印刷株式会社
代理人 弁理士 小 西 淳 美
第１図FIGS. 1(a) to (d) are cross-sectional views showing the manufacturing process of an embodiment of the present invention, FIG. 2 is a cross-sectional view showing another embodiment of the present invention,
FIG. 3 is a cross-sectional view for explaining a conventional XMB light mask. /...X-ray exposure mask...X-ray transparent thin film 3...X-ray absorptive pattern...φ...Support frame! ...Window No.6, e...S1 wafer substrate...Protective film...Reinforcement frame t...Adhesive layer Patent applicant Agent for Dai Nippon Printing Co., Ltd. Patent Attorney Atsushi Konishi Figure 1
Claims (1)
、且つ他面側に支持枠が設けられているＸ線露光用マス
クにおいて、Ｘ線吸収性パターンの下面のＸ線透過性薄
膜領域をＸ線透過領域に対応するＸ線透過性薄膜よりも
厚膜に形成し、且つＸ線吸収性パターンの下面に対応す
るＸ線透過性薄膜部分の膜厚、及びＸ線透過領域に対応
するＸ線透過性薄膜部分の膜厚を、Ｘ線吸収性パターン
の下面に対応するＸ線透過性薄膜部分の引張り力とＸ線
吸収性パターンの圧縮力の合成力と、Ｘ線透過領域に対
応するＸ線透過性薄膜部分の引張り力がほゞ等しくなる
ような膜厚としたことを特徴とするＸ線露光用マスク。In an X-ray exposure mask in which an X-ray absorbing pattern is provided on one side of an X-ray transparent thin film and a support frame is provided on the other side, the X-ray transparent thin film region on the lower surface of the X-ray absorbing pattern is formed to be thicker than the X-ray transparent thin film corresponding to the X-ray transparent area, and the film thickness of the X-ray transparent thin film portion corresponding to the lower surface of the X-ray absorbing pattern corresponds to the X-ray transparent area. The film thickness of the X-ray transparent thin film part is determined by the combined force of the tensile force of the X-ray transparent thin film part corresponding to the lower surface of the X-ray absorbing pattern and the compressive force of the X-ray absorbing pattern, and the X-ray transparent area. An X-ray exposure mask characterized by having a film thickness such that the tensile forces of the X-ray transparent thin film portions are approximately equal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61283748A JPS63136621A (en) | 1986-11-28 | 1986-11-28 | X-ray exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61283748A JPS63136621A (en) | 1986-11-28 | 1986-11-28 | X-ray exposure mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63136621A true JPS63136621A (en) | 1988-06-08 |
Family
ID=17669597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61283748A Pending JPS63136621A (en) | 1986-11-28 | 1986-11-28 | X-ray exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63136621A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0373950A (en) * | 1989-08-14 | 1991-03-28 | Fujitsu Ltd | Manufacture of mask for exposing |
-
1986
- 1986-11-28 JP JP61283748A patent/JPS63136621A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0373950A (en) * | 1989-08-14 | 1991-03-28 | Fujitsu Ltd | Manufacture of mask for exposing |
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