JPH01152625A - Apparatus for and method of manufacturing x-ray exposure mask - Google Patents

Apparatus for and method of manufacturing x-ray exposure mask

Info

Publication number
JPH01152625A
JPH01152625A JP62311241A JP31124187A JPH01152625A JP H01152625 A JPH01152625 A JP H01152625A JP 62311241 A JP62311241 A JP 62311241A JP 31124187 A JP31124187 A JP 31124187A JP H01152625 A JPH01152625 A JP H01152625A
Authority
JP
Japan
Prior art keywords
ray
exposure mask
annular
ray exposure
absorbing pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62311241A
Other languages
Japanese (ja)
Inventor
Hiroyuki Nakamura
洋之 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP62311241A priority Critical patent/JPH01152625A/en
Publication of JPH01152625A publication Critical patent/JPH01152625A/en
Pending legal-status Critical Current

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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To keep the faltness of an X-ray exposure mask without locally concentrating force and in particular improve the flatness of an X-ray absorptive side by holding said mask keeping in succession the flatness from the inside to the outside of said mask. CONSTITUTION:A planar reference structure 2 has a through-hole 3 through the center thereof, which hole surrounds an X-ray absorptive pattern region 5 included by an X-ray exposure mask 4. A planar part 1 makes contact with an annular region 6 surrounding the X-ray absorptive pattern region 5. A plurality of the same annular grooves 7 are formed along the periphery of the through-hole 3 in the vicinity of the planar part 1 located in close vicinity of the through-hole 3. Each annular groove 7 is communicated with one end of an air hole 8, the other end of which hole is opened to the side of the planar reference structure 2 and connected to a vacuum unit. Hereby, the annular region 6 of the X-ray exposure mask 4 in contact with the annular groove 7 is attracted.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は微細パターンを高精度に転写するためのX線露
光用マスクの製造装置および製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus and method for manufacturing an X-ray exposure mask for transferring fine patterns with high precision.

〔従来の技術〕[Conventional technology]

X線露光法は、露光用パターンが半導体基板等に転写さ
れる時、露光の回折が原因となるパターンの微細化の限
界を克服する露光方法として知られている。
The X-ray exposure method is known as an exposure method that overcomes the limitations of pattern miniaturization caused by exposure diffraction when an exposure pattern is transferred onto a semiconductor substrate or the like.

X線露光を行うためにはX線透過率の十分太きL1X線
露光用マスクが必要であり、そして、X線露光用マスク
の基板はX線透過性の優れた材料が使用される。この基
板上にはX線吸収性材料薄膜からなるX線吸収性パター
ンが形成される。このように形成されたX線露光用マス
クのX線吸収性パターンが、例えば、半導体基板に転写
される場合、使用されるX線は一般に波長が4〜数lO
オングストロームの軟X線である。
In order to perform X-ray exposure, an L1 X-ray exposure mask with sufficiently thick X-ray transmittance is required, and the substrate of the X-ray exposure mask is made of a material with excellent X-ray transparency. An X-ray absorbing pattern made of a thin film of X-ray absorbing material is formed on this substrate. When the X-ray absorptive pattern of the X-ray exposure mask formed in this way is transferred to, for example, a semiconductor substrate, the X-rays used generally have a wavelength of 4 to several 1O2.
Angstrom soft X-rays.

上記のようなX線露光方法には大別して一括転写方式と
ステップアンドリピート方式との三方式がある。−括転
写方式は大面積を一括して転写するために1μm幅以下
のパターンの転写では転写精度が低下する。このために
1μm幅以下のパターン転写にはステップアンドリピー
ト方式が主に採用されている。
The above-mentioned X-ray exposure methods can be roughly divided into three methods: a batch transfer method and a step-and-repeat method. - Since the batch transfer method transfers a large area at once, the transfer accuracy decreases when a pattern with a width of 1 μm or less is transferred. For this reason, a step-and-repeat method is mainly used for pattern transfer with a width of 1 μm or less.

ステップアンドリピート方式の場合、X線露光用マスク
と、露光される側のX線レジストを塗布した81基板と
の間隙は、転写の「ぼけ」を最少限にするために数lO
μmに抑えられる。このために、X線吸収性パターンの
位置精度を考慮するとX線露光用マスクの平面度は5〜
lOμmの範囲に維持すべきである。この平面度を向上
させた従来の技術としては特開昭53−75770号公
報のX線転写用マスクがある。この技術はX線露光用マ
スク面を一度に真空吸引することによりマスク面の平面
度を保持した状態で、ホウ珪酸ガラス等の変形し難い補
強枠をX線露光用マスクを支持している支持枠に張合わ
せるものである。このような補強により真空吸引がマス
ク面がら解除されたー 後もマスク面の平面度が維持さ
れるようになっている。
In the case of the step-and-repeat method, the gap between the X-ray exposure mask and the 81 substrate coated with X-ray resist on the side to be exposed is several lO to minimize the "blurring" of the transfer.
It can be suppressed to μm. For this reason, considering the positional accuracy of the X-ray absorbing pattern, the flatness of the X-ray exposure mask is 5 to 5.
It should be kept in the range of 10 μm. As a conventional technique for improving the flatness, there is an X-ray transfer mask disclosed in Japanese Patent Application Laid-open No. 75770/1983. This technology uses a reinforcing frame made of borosilicate glass or other material that is difficult to deform to support the X-ray exposure mask while maintaining the flatness of the mask surface by vacuum suctioning the mask surface at once. It is attached to a frame. This reinforcement ensures that the flatness of the mask surface is maintained even after vacuum suction is removed from the mask surface.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら上記従来のようなX線露光用マスクの平面
度を均一に維持しようとする方法ではX線露光用マスク
を一度に真空吸引するので局部的に力が集中し、X線露
光用マスクに歪みが生じる。
However, in the conventional method described above that attempts to maintain uniform flatness of the X-ray exposure mask, the X-ray exposure mask is vacuum-suctioned all at once, so force is concentrated locally, causing distortion of the X-ray exposure mask. occurs.

このためにX線露光用マスクの平面度の均一性には問題
がある。
For this reason, there is a problem in the uniformity of the flatness of the X-ray exposure mask.

本発明はX線露光用マスクをその内方から外方へ順次平
面に保持することにより局部的に力を集中させずに平面
度を維持し、特に、X線吸収性パターン側の平面度を向
上させたX線露光用マスクの製造装置および製造方法を
提供することを目的とする。
The present invention maintains flatness without locally concentrating force by holding an X-ray exposure mask sequentially from the inside to the outside. It is an object of the present invention to provide an improved manufacturing apparatus and manufacturing method for an X-ray exposure mask.

〔問題点を解決するための手段〕[Means for solving problems]

上記目的を達成するために第1の本発明は、基板に形成
されたX線透過性薄膜の一面側にX線吸収性パターン領
域と、このX線吸収性パターン領域の周囲の環状領域と
を有し、このX線透過性薄膜の他面側に環状領域に対応
したX線透過性薄膜を支持する支持枠を有するX線露光
用マスクの製造装置において、一面側に形成された環状
領域に当接する平面部と、この平面部に形成された複数
の環状溝と、このそれぞれの環状溝から外部へ連通させ
た空気孔とを備えたX線露光用マスクの製造装置を内容
とする。
In order to achieve the above object, a first aspect of the present invention includes an X-ray absorbing pattern area on one side of an X-ray transparent thin film formed on a substrate, and an annular area around the X-ray absorbing pattern area. In an apparatus for manufacturing an X-ray exposure mask, which has a support frame for supporting the X-ray transparent thin film corresponding to the annular area on the other side of the X-ray transparent thin film, the annular area formed on one side is The present invention is directed to an apparatus for manufacturing an X-ray exposure mask, which includes a flat part that comes into contact with the flat part, a plurality of annular grooves formed in the flat part, and air holes that communicate with the outside from each of the annular grooves.

第2の本発明は、基板に形成されたX線透過性薄膜の一
面側にX線吸収性パターン領域と、このX線吸収性パタ
ーン領域の周囲の環状領域とを有し、このX線透過性薄
膜の他面側に環状領域に対応したX線透過性薄膜を支持
する支持枠を有するX線露光用マスクの製造方法におい
て、環状領域の内方から外方へ向けて順次外力を加えな
がら前記X線吸収性パターン領域を平面に保持する工程
と、次に、X線吸収性パターン領域と環状領域とを平面
に保持しながら支持枠の端面に沿って補強枠を固着する
工程とを備えたX線露光用マスクの製造方法を内容とす
る。
The second aspect of the present invention has an X-ray absorbing pattern area on one side of an X-ray transparent thin film formed on a substrate, and an annular area around the X-ray absorbing pattern area, and In a method for manufacturing an X-ray exposure mask having a support frame supporting an X-ray transparent thin film corresponding to an annular region on the other side of the transparent thin film, while sequentially applying an external force from the inside to the outside of the annular region, The method includes the steps of holding the X-ray absorbing pattern area in a plane, and then fixing a reinforcing frame along the end surface of the support frame while holding the X-ray absorbing pattern area and the annular area in a plane. The content includes a method for manufacturing an X-ray exposure mask.

〔作 用〕[For production]

上記のように、第1の本発明のX線露光用マスクの製造
装置を使用する時は、製造装置の平面部をX線吸収性パ
ターン領域の周囲の環状領域に当接する。この後、平面
部に形成された複数の環状溝のうち内方の環状溝が空気
孔を通して真空吸引される。次に、X線吸収性パターン
領域の平面度を維持しながら、上記の環状溝よりも外側
の環状溝が空気孔を通して真空吸引される。このように
してX線吸収性パターン領域の平面度が維持される。
As described above, when using the X-ray exposure mask manufacturing apparatus of the first aspect of the present invention, the flat part of the manufacturing apparatus is brought into contact with the annular area around the X-ray absorbing pattern area. After this, the inner annular groove among the plurality of annular grooves formed in the plane part is vacuum-suctioned through the air hole. Next, while maintaining the flatness of the X-ray absorbing pattern area, the annular grooves outside the above-mentioned annular grooves are vacuum-suctioned through the air holes. In this way, the flatness of the X-ray absorbing pattern area is maintained.

第2の本発明のX線露光用マスクの製造方法は、まず、
環状領域の内方から外方へ外力を加えながらX線吸収性
パターン領域の平面度を維持する。
The second method of manufacturing an X-ray exposure mask of the present invention includes:
The flatness of the X-ray absorbing pattern area is maintained while applying an external force from the inside to the outside of the annular area.

そして、X線吸収性パターン領域および環状領域を平面
に保持しながら支持枠の端面に補強枠を固着する。
Then, the reinforcing frame is fixed to the end face of the support frame while keeping the X-ray absorbing pattern area and the annular area flat.

〔実施例〕〔Example〕

以下に本発明のX線露光用マスクの製造装置およびX線
露光用マスクの製造方法を図面に基づいて説明する。ま
ず、第1の発明としてX線露光用マスクの製造装置の一
実施例を説明する。この製造装置は第1図および第2図
に示すように平面部1を有する平面基準体2である。こ
の平面基準体2の中央部は貫通孔3となっており、この
貫通孔3は、後で詳しく説明するが、X線露光用マスク
4が有するX線吸収性パターン領域5を囲む。平面部1
は、同じくX線露光用マスク4が有するX線吸収性パタ
ーン領域5の周囲の環状領域6に接する。貫通孔3の周
縁に接近した平面部1付近には貫通孔3の周囲に沿って
複数の環状溝7が形成されている。この環状溝7は同心
円に形成されている。それぞれの環状溝7には別々の空
気孔8の一方が連通しており、この空気孔8の他方は平
面基準体2の側部に開口している。この空気孔8の開口
は図示省略された真空装置に接続されることにより、環
状溝7に接しているX線露光用マスク4の環状領域6は
吸引される。
EMBODIMENT OF THE INVENTION Below, the manufacturing apparatus of the X-ray exposure mask and the manufacturing method of the X-ray exposure mask of this invention are demonstrated based on drawing. First, as a first invention, an embodiment of an apparatus for manufacturing an X-ray exposure mask will be described. This manufacturing apparatus is a flat reference body 2 having a flat portion 1 as shown in FIGS. 1 and 2. The central part of the flat reference body 2 is a through hole 3, and this through hole 3 surrounds an X-ray absorbing pattern region 5 of the X-ray exposure mask 4, as will be described in detail later. Plane part 1
is in contact with an annular region 6 around the X-ray absorbing pattern region 5 that the X-ray exposure mask 4 similarly has. A plurality of annular grooves 7 are formed along the periphery of the through hole 3 in the vicinity of the flat portion 1 close to the periphery of the through hole 3 . This annular groove 7 is formed concentrically. Each annular groove 7 communicates with one of separate air holes 8, and the other air hole 8 opens at the side of the flat reference body 2. The opening of the air hole 8 is connected to a vacuum device (not shown), so that the annular region 6 of the X-ray exposure mask 4 in contact with the annular groove 7 is sucked.

次に、上記のような構造の平面基準体2を用いてX線露
光用マスク4の支持枠に補強枠を固着する工程を説明す
るが、この前にX線露光用マスク4の構造を簡単に説明
する。
Next, we will explain the process of fixing the reinforcing frame to the support frame of the X-ray exposure mask 4 using the planar reference body 2 having the structure described above. Explain.

第3図はX線露光用マスク4の断面図である。FIG. 3 is a sectional view of the X-ray exposure mask 4.

このX線露光用マスク4に使用されるシリコン基板(以
下、S1基板という)9は厚さが0.3〜4.0■■に
鏡面研磨されたものである。Si基板9の両面にはCV
D装置を使用することにより厚さが3μmでX線透過性
薄膜としてのSIN膜10   −が形成される。31
基板9の下面側のSIN膜10にはフォトレジストパタ
ーンが形成され、このフォトレジストパターンをマスク
にしてエツチング処理を行うことにより81基板9の下
面中央部にはX線透過窓11が形成される。このX線透
過窓11を囲むS1基板9の部分は支持枠12となり、
支持枠12に残されたSIN膜10は保護膜13となる
。SiN膜11の上面にはタングステンWもしくはタン
タルTaからなる厚さが1μmのX線吸収性材料層がス
パッタリング法により形成される。さらに、このX線吸
収性材料層の上には、例えば、通常の電子線描画法によ
りレジストパターンが形成され、このレジストパターン
をマスクにドライエツチング処理を行うことによりX線
吸収性パターン領域5にX線吸収性パターン14が形成
される。そして、このX線吸収性パターン14の周囲は
環状領域6となる。
A silicon substrate (hereinafter referred to as S1 substrate) 9 used in this X-ray exposure mask 4 is mirror-polished to a thickness of 0.3 to 4.0 mm. There are CVs on both sides of the Si substrate 9.
By using apparatus D, a SIN film 10 - having a thickness of 3 μm and serving as an X-ray transparent thin film is formed. 31
A photoresist pattern is formed on the SIN film 10 on the lower surface side of the substrate 9, and by performing an etching process using this photoresist pattern as a mask, an X-ray transmitting window 11 is formed in the center of the lower surface of the substrate 9. . The part of the S1 substrate 9 surrounding this X-ray transmission window 11 becomes a support frame 12,
The SIN film 10 left on the support frame 12 becomes a protective film 13. A 1 μm thick X-ray absorbing material layer made of tungsten W or tantalum Ta is formed on the upper surface of the SiN film 11 by sputtering. Furthermore, a resist pattern is formed on this X-ray absorbing material layer by, for example, a normal electron beam lithography method, and by performing a dry etching process using this resist pattern as a mask, the X-ray absorbing pattern area 5 is formed. An X-ray absorbing pattern 14 is formed. The circumference of this X-ray absorbing pattern 14 becomes an annular region 6.

次に、上記のような構造のX線露光用マスク4の支持枠
12に補強枠15を固着するための第1の工程を説明す
る。まず、第4図に示すように平面基準体2の平面部1
がX線露光用マスク4の環状領域6に当接される。即ち
、平面基準体2の貫通孔3がX線吸収性パターン領域5
を収納する状態にする。この状態で貫通孔3に近い環状
溝7に連通ずる空気孔8が図示省略された真空装置によ
り大気圧から60Torrまで吸引される。この真空吸
引により貫通孔3に近い環状領域6は平面基準体2の平
面部1に吸着される。次に、フィーゾ干渉計を用いてX
線吸収性パターン領域5のSIN膜11の平面度を測定
しながら吸引状態の環状溝7よりも外側の環状溝7に連
通ずる空気孔8が大気圧から60Torrまで吸引され
る。この真空吸引により上記の吸引状態の環状領域6よ
りも外側の環状領域6が平面部1に吸着される。このよ
うに第1の工程が行われることによりX線吸収性パター
ン領域5のSIN膜11の平面度は真空吸引する前は2
.5μmであったものが、0.5μmとなった。
Next, a first step for fixing the reinforcing frame 15 to the support frame 12 of the X-ray exposure mask 4 having the above structure will be described. First, as shown in FIG.
is brought into contact with the annular region 6 of the X-ray exposure mask 4. That is, the through hole 3 of the flat reference body 2 is located in the X-ray absorbing pattern area 5.
to the state where it is stored. In this state, the air hole 8 communicating with the annular groove 7 near the through hole 3 is sucked from atmospheric pressure to 60 Torr by a vacuum device (not shown). Due to this vacuum suction, the annular region 6 near the through hole 3 is attracted to the flat part 1 of the flat reference body 2. Next, using a Fieso interferometer,
While measuring the flatness of the SIN film 11 in the line-absorbing pattern area 5, air holes 8 communicating with the annular groove 7 on the outside of the annular groove 7 in the suction state are sucked from atmospheric pressure to 60 Torr. By this vacuum suction, the annular region 6 outside the annular region 6 in the above-described suction state is attracted to the flat part 1. By performing the first step in this way, the flatness of the SIN film 11 in the X-ray absorbing pattern area 5 is 2.
.. What used to be 5 μm became 0.5 μm.

次に、第2の工程を説明する。X線吸収性パターン領域
5と環状領域6とを平面に保持しながら、支持枠12の
保護膜13の上からホウ珪酸ガラス材料からなる補強枠
15がエポキシ系接着剤15aにより張り合される。こ
のように支持枠12に補強枠15を張り合わした状態の
X線露光用マスク4が90℃の温度に維持されたオーブ
ン中に1時間加熱される。加熱されることによりエポキ
シ系接着剤15aは硬化し、第5図に示すようにX線露
光用マスク4が平面基準体2から外され、第2の工程が
完了する。完成したX線露光用マスク4のSIN膜10
の平面度は上記したように0.5μmに維持されるので
X線吸収性パターン領域5の平面度は良好となる。
Next, the second step will be explained. A reinforcing frame 15 made of borosilicate glass material is pasted onto the protective film 13 of the support frame 12 using an epoxy adhesive 15a while keeping the X-ray absorbing pattern area 5 and the annular area 6 flat. The X-ray exposure mask 4 with the reinforcing frame 15 bonded to the support frame 12 in this manner is heated in an oven maintained at a temperature of 90° C. for one hour. The epoxy adhesive 15a is cured by heating, and as shown in FIG. 5, the X-ray exposure mask 4 is removed from the flat reference body 2, and the second step is completed. SIN film 10 of completed X-ray exposure mask 4
Since the flatness of the X-ray absorbing pattern region 5 is maintained at 0.5 μm as described above, the flatness of the X-ray absorbing pattern region 5 is good.

〔発明の効果〕〔Effect of the invention〕

以上述べたことから第1の発明のX線露光用マスクの製
造装置はX線吸収性パターン領域の周囲の環状領域に当
接する平面部に複数の環状溝を形成し、このそれぞれの
環状溝に連通する空気孔から環状溝毎に真空吸引できる
ので、従来のようにX線露光用マスクに局部的な力が集
中することにより歪が生ずるような問題は解消され、品
質の良いX線露光用マスクを製造することができる。ま
た、第2の発明のX線露光用マスクの製造方法ではX線
露光用マスクの環状領域に対して、X線吸収性パターン
領域に近い内方の環状領域から外方の環状領域へ順次真
空吸引しながらX線吸収性パターン領域の平面度を維持
し、X線露光用マスクの支持枠に補強枠を固着するので
従来のように一度に真空吸引するものに比べて良好な平
面度を維持できる。このためにX線露光用マスクと、露
光されるX線レジストを塗布した半導体基板との間隙は
数10μm以下に設定できる。したがって、連続した露
光を行っても上記した間隙の精度が維持され、露光品質
が向上すると共に露光作業の能率が向上する。
From the above, the X-ray exposure mask manufacturing apparatus of the first invention forms a plurality of annular grooves in the plane portion that abuts the annular area around the X-ray absorbing pattern area, and each of the annular grooves Vacuum can be drawn from the communicating air holes to each annular groove, which eliminates the problem of distortion caused by local concentration of force on the X-ray exposure mask, and allows for high-quality X-ray exposure masks. Masks can be manufactured. Further, in the method for manufacturing an X-ray exposure mask of the second invention, the annular region of the X-ray exposure mask is sequentially vacuumed from the inner annular region near the X-ray absorbing pattern region to the outer annular region. The flatness of the X-ray absorbing pattern area is maintained while suctioning, and since the reinforcing frame is fixed to the support frame of the X-ray exposure mask, better flatness is maintained compared to conventional vacuum suctioning methods. can. For this reason, the gap between the X-ray exposure mask and the semiconductor substrate coated with the X-ray resist to be exposed can be set to several tens of micrometers or less. Therefore, even if continuous exposure is performed, the above-mentioned gap accuracy is maintained, the exposure quality is improved, and the efficiency of the exposure work is improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は第1の発明のX線露光用マスクの製造装置を示
す平面図、第2図は第1図に矢印A−Aにより示す断面
図、第3図はX線露光用マスクを示す断面図、第4図は
第2の発明のxag光用マスクの製造方法により製造さ
れるX線露光用マスクの工程の途中を示す断面図、第5
図は製造されたX線露光用マスクを示す断面図である。 1・・・平面部、4・・・X線露光用マスク、5・・・
X線吸収性パターン領域、6・・・環状領域、7・・・
環状溝、8・・・空気孔、9・・・基板(31基板)、
10・・・X線透過性薄膜(SI N膜)、12・・・
支持枠、15・・・補強枠。 出願人代理人  佐  藤  −雄 馬1図 娩3図
FIG. 1 is a plan view showing an apparatus for manufacturing an X-ray exposure mask according to the first invention, FIG. 2 is a sectional view shown by arrow A-A in FIG. 1, and FIG. 3 is a diagram showing the X-ray exposure mask. A cross-sectional view, FIG. 4 is a cross-sectional view showing the middle of the process of an X-ray exposure mask manufactured by the method for manufacturing an XAG light mask of the second invention, and FIG.
The figure is a sectional view showing a manufactured X-ray exposure mask. 1... Flat part, 4... X-ray exposure mask, 5...
X-ray absorptive pattern region, 6... annular region, 7...
Annular groove, 8... air hole, 9... substrate (31 substrates),
10...X-ray transparent thin film (SIN film), 12...
Support frame, 15... Reinforcement frame. Applicant's agent Sato - 1 stallion and 3 calvings

Claims (1)

【特許請求の範囲】 1、基板に形成されたX線透過性薄膜の一面側にX線吸
収性パターン領域と、このX線吸収性パターン領域の周
囲の環状領域とを有し、このX線透過性薄膜の他面側に
前記環状領域に対応した前記X線透過性薄膜を支持する
ための支持枠を有するX線露光用マスクの製造装置にお
いて、前記一面側に形成された前記環状領域に当接する
平面部と、この平面部に形成された複数の環状溝と、こ
のそれぞれの環状溝から外部へ連通させた空気孔とを備
えたことを特徴とするX線露光用マスクの製造装置。 2、基板に形成されたX線透過性薄膜の一面側にX線吸
収性パターン領域と、このX線吸収性パターン領域の周
囲の環状領域とを有し、このX線透過性薄膜の他面側に
前記環状領域に対応した前記X線透過性薄膜を支持する
支持枠を有するX線露光用マスクの製造方法において、
前記環状領域の内方から外方へ向けて順次外力を加えな
がら前記X線吸収性パターン領域を平面に保持する工程
と、次に、前記X線吸収性パターン領域と前記環状領域
とを平面に保持しながら前記支持枠の端面に沿って補強
枠を固着する工程とを備えたことを特徴とするX線露光
用マスクの製造方法。
[Scope of Claims] 1. An X-ray absorbing pattern area is provided on one surface side of an X-ray transparent thin film formed on a substrate, and an annular area around this X-ray absorbing pattern area is provided. In an apparatus for manufacturing an X-ray exposure mask, which has a support frame for supporting the X-ray transparent thin film corresponding to the annular region on the other surface side of the transparent thin film, the annular region formed on the one surface side 1. A manufacturing apparatus for an X-ray exposure mask, comprising: a flat part that comes into contact with the flat part; a plurality of annular grooves formed in the flat part; and air holes that communicate with the outside from each of the annular grooves. 2. The X-ray transparent thin film formed on the substrate has an X-ray absorbing pattern area on one side and an annular area around the X-ray absorbing pattern area, and the other side of the X-ray transparent thin film. A method for manufacturing an X-ray exposure mask having a support frame supporting the X-ray transparent thin film corresponding to the annular region on the side thereof,
a step of holding the X-ray absorbing pattern area in a plane while sequentially applying an external force from the inside to the outside of the annular area, and then making the X-ray absorbing pattern area and the annular area flat. A method for manufacturing an X-ray exposure mask, comprising the step of fixing a reinforcing frame along an end surface of the support frame while holding the support frame.
JP62311241A 1987-12-09 1987-12-09 Apparatus for and method of manufacturing x-ray exposure mask Pending JPH01152625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62311241A JPH01152625A (en) 1987-12-09 1987-12-09 Apparatus for and method of manufacturing x-ray exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62311241A JPH01152625A (en) 1987-12-09 1987-12-09 Apparatus for and method of manufacturing x-ray exposure mask

Publications (1)

Publication Number Publication Date
JPH01152625A true JPH01152625A (en) 1989-06-15

Family

ID=18014791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62311241A Pending JPH01152625A (en) 1987-12-09 1987-12-09 Apparatus for and method of manufacturing x-ray exposure mask

Country Status (1)

Country Link
JP (1) JPH01152625A (en)

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