JPS60251620A - X-ray mask - Google Patents
X-ray maskInfo
- Publication number
- JPS60251620A JPS60251620A JP59107583A JP10758384A JPS60251620A JP S60251620 A JPS60251620 A JP S60251620A JP 59107583 A JP59107583 A JP 59107583A JP 10758384 A JP10758384 A JP 10758384A JP S60251620 A JPS60251620 A JP S60251620A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- support frame
- pattern
- mask
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 6
- 150000004044 tetrasaccharides Chemical class 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 239000000428 dust Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010408 film Substances 0.000 abstract description 4
- 238000001312 dry etching Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000001015 X-ray lithography Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 235000010893 Bischofia javanica Nutrition 0.000 description 1
- 240000005220 Bischofia javanica Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、軟Ｘ線照射により半導体基板上にパターンを
形成するＸ線リングラフィ法において用いられるＸ線マ
スクの構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to the structure of an X-ray mask used in an X-ray phosphorography method for forming a pattern on a semiconductor substrate by irradiating soft X-rays.
Ｘ線マスクの基本構造は、第１図に示すように、Ｘ線に
対して透過性の高い材料で作られた薄膜２の面上に、転
写すべき形状に対応した形状を有するパターン３をＸ線
透過性の低い材料で形成し、この薄膜２をその周辺部に
おいてリング状の支持枠１で固定状に支持するものであ
る。As shown in Figure 1, the basic structure of an X-ray mask is that a pattern 3 having a shape corresponding to the shape to be transferred is placed on the surface of a thin film 2 made of a material highly transparent to X-rays. The thin film 2 is made of a material with low X-ray transparency and is fixedly supported by a ring-shaped support frame 1 around the thin film 2.
このような構成のＸ線マスクを用いＸ線リングラフィに
より半導体基板面上のレジスト層にパターン転写する方
法の概略を第２図により説明する。A method of transferring a pattern to a resist layer on a semiconductor substrate surface by X-ray phosphorography using an X-ray mask having such a configuration will be outlined with reference to FIG.
第２図において、２３は第１図で説明した構造のＸ線マ
スクであり、２４は支持枠、２５は薄膜、２６はパター
ンをそれぞれ示し、このＸ線マスク２３がＸ線露光装置
に具備されるマスクホルダ２２に一体的に装着されてお
り、ｘｉ源２１より生じたＸ線２１′がＸ線マスク２３
を照射する。このＸ線２１′は薄膜２５を透過して下方
にあるＳ１ウエハ２７（一般には試料基板）の上面に塗
布したレジスト層２８を感光させる。ここで、Ｘ線透過
性の悪い材料から成るノ＜ターン２６に照射したＸ線２
１′ はレジスト層２８にはほとんど到達しないため、
所定のパターンがレジスト層２８に転写されることにな
る。In FIG. 2, 23 is an X-ray mask having the structure explained in FIG. 1, 24 is a support frame, 25 is a thin film, and 26 is a pattern, and this X-ray mask 23 is installed in an X-ray exposure device. The X-ray mask 23 is integrally attached to the mask holder 22, and the
irradiate. The X-rays 21' pass through the thin film 25 and expose a resist layer 28 coated on the upper surface of the S1 wafer 27 (generally a sample substrate) located below. Here, the X-ray 2 irradiated onto the turn 26 made of material with poor X-ray transparency.
1' hardly reaches the resist layer 28, so
A predetermined pattern will be transferred to the resist layer 28.
Ｘ線マスク２３の支持枠２４は厚いためＸ線２１′は透
過せず、前記パターン転写には寄与しない。従って、支
持枠２４のウェハ対向面の形状は任意で、薄膜２５を支
持し、かつ、転写すべきパターン領域以外に照射される
Ｘ線を遮へいする機能さえあればよい。Since the support frame 24 of the X-ray mask 23 is thick, the X-rays 21' do not pass therethrough and do not contribute to the pattern transfer. Therefore, the shape of the wafer-facing surface of the support frame 24 is arbitrary, as long as it supports the thin film 25 and shields the X-rays irradiated to areas other than the pattern area to be transferred.
しかしながら、上記従来構造には次のような問題があっ
た。即ち、Ｘ線リソグラフィ法によりパターン転写を行
なう場合には、Ｘ線マスクとパターン転写されるレジス
ト層との間隙を、正確かつ精度のよいパターン転写とす
るために、５０μｍ以下と極めて狭くする必要があるが
、従来構造では、Ｘ線マスクとウェハとが近接する領域
がパターン領域より広いため、Ｘ線マスクの下面への塵
埃の付着や、Ｘ線マスク取扱い中に生じた突起状の傷等
が生じ易く、それにより、上記間隙の精度が悪化したリ
ウェハ表面に傷を付けやすく、高精度のパターン転写が
歩留りよくできないという問題があった。このＸ線マス
クへの塵埃付着や傷発生は、主に、Ｘ線マスクの作製プ
ロセス中、あるいは完成したＸ線マスクの取扱い中に、
このＸ線マスクの周辺部にピンセットや治具等の取扱い
工具が触れることによって生ずるものが多いことが判っ
た。However, the above conventional structure has the following problems. That is, when pattern transfer is performed by X-ray lithography, the gap between the X-ray mask and the resist layer to which the pattern is transferred needs to be extremely narrow, 50 μm or less, in order to achieve accurate and precise pattern transfer. However, in the conventional structure, the area where the X-ray mask and wafer are close to each other is wider than the pattern area, which causes problems such as dust adhesion to the underside of the X-ray mask and protruding scratches that occur during handling of the X-ray mask. As a result, the accuracy of the gap is likely to deteriorate and the surface of the rewafer is likely to be damaged, resulting in a problem that high-precision pattern transfer cannot be performed at a high yield. Dust adhesion and scratches on the X-ray mask are mainly caused during the manufacturing process of the X-ray mask or during handling of the completed X-ray mask.
It has been found that many of these problems occur when handling tools such as tweezers or jigs come into contact with the periphery of the X-ray mask.
本発明の目的は、従来技術での上記した問題を解決し、
Ｘ線マスクの作製プロセス中や完成したｘｇマスクの取
扱い中に薄膜面あるいはパターン面に塵埃が付着したり
傷が発生するのを防止し、これにより、高精度、高歩留
りのＸ線リソグラフィを実現することを可能とする構成
を備えたＸ線マスクを提供することにある。The purpose of the present invention is to solve the above-mentioned problems in the prior art,
Prevents dust from adhering to or scratching the thin film or pattern surface during the X-ray mask manufacturing process or when handling the completed XG mask, thereby realizing high-precision, high-yield X-ray lithography. An object of the present invention is to provide an X-ray mask having a configuration that allows the above-mentioned functions.
本発明の特徴は、上記目的を達成するために、Ｘ線マス
クを形成する薄膜のパターンを形成した領域の外径より
大きい外径を有する支持枠とし、この支持枠の上記薄膜
のパターン形成領域の外径より外方に位置する外縁部の
少なくとも一部すなわちＸ線マスクのウェハと接近する
必要がない部分２′および２“ （第１図）に、試料基
板面までの空隙長が、前記薄膜のパターン形成面と試料
基板（ウェハ）面との間の空隙長よりも段差状に大きく
なる段差部を設ける構成とするにある。In order to achieve the above object, the present invention is characterized by providing a support frame having an outer diameter larger than the outer diameter of a region in which a pattern of a thin film forming an X-ray mask is formed; At least a part of the outer edge located outward from the outer diameter of the X-ray mask, that is, a part 2' and 2'' (FIG. 1) that does not need to come close to the wafer of the X-ray mask, has a gap length up to the sample substrate surface. The structure is such that a stepped portion is provided which is larger than the gap length between the pattern-forming surface of the thin film and the sample substrate (wafer) surface.
本発明の一実施例を、第３図に示す断面図により説明す
る。第３図において、３３は薄膜３５に形成されたパタ
ーン、３４は薄膜３５をその周辺部において支持するリ
ング状の支持枠、３６はマスク表面、３７は支持枠３４
に設けられる段差部の段差面、３８は支持枠３４の裏面
をそれぞれ示す。支持枠３４の外径は薄膜３５の外径よ
り大きく作られ、この支持枠３４の薄膜外径より外方に
位置する外縁部に、図示しないＳｉウェハのレジスト層
までの空隙長が、マスク表面３６とレジスト層との間の
空隙長よりも段差状に大きくなる段差部３７が設けられ
る。An embodiment of the present invention will be described with reference to a sectional view shown in FIG. In FIG. 3, 33 is a pattern formed on the thin film 35, 34 is a ring-shaped support frame that supports the thin film 35 at its periphery, 36 is a mask surface, and 37 is a support frame 34.
Reference numeral 38 indicates the back surface of the support frame 34, respectively. The outer diameter of the support frame 34 is made larger than the outer diameter of the thin film 35, and at the outer edge of the support frame 34 located outward from the thin film outer diameter, a gap length up to a resist layer of a Si wafer (not shown) is formed on the mask surface. A step portion 37 is provided which is larger than the gap length between the resist layer 36 and the resist layer.
このような構成とすることにより、Ｘ線マスクの作製プ
ロセス中あるいはＸ線マスク完成後の搬送時などの取扱
いは、この段差部３７の底面と支持枠裏面３８との間を
ピンセット等の取扱い工具で挟むことで取扱うことが可
能となり、これにより、薄膜面やパターン面にピンセッ
ト等の工具が接触することがなくなり、これらの面への
塵埃付着や傷発生を大幅に低減させることができる。With this configuration, when handling the X-ray mask during the manufacturing process or when transporting the X-ray mask after completion, use a handling tool such as tweezers between the bottom surface of the stepped portion 37 and the back surface 38 of the support frame. This allows tools such as tweezers to not come into contact with the thin film surface or pattern surface, and it is possible to significantly reduce dust adhesion and scratches on these surfaces.
第４図は本発明の一実施例でＸ線マスクの製作工程の概
略を示したものである。まず、■に示すように、外径Ｄ
□が５０ｍ、厚さＴが５００声の円板状のＳｉウェハ４
１の外周面に、図示の直径Ｄ２が４０ｍｍとなり、ｔが
２００陣となる段差面４３を研削してマスク基板を作製
する。次に■において、厚さが４ｐｍのＸ線透過膜４４
を、ＢＮ、ＳｉＯ２、Ｓｉ３Ｎ３等のいずれか一つを材
料として高周波スパッタリング法により形成した後、さ
らに、厚さ１ｐｍのＡｕ膜を真空蒸着法により被着し、
これをドライエッチング法により所定の形状のＡｕパタ
ーン４５を形成する。次に■に示すように、治具４６上
にマスク基板４１を裏返しにして置き、マスク基板裏面
に耐酸性薄膜４７を高周波スパッタリング法により被着
した後、ドライエツチング法により中央部の耐酸性薄膜
を除去する。次に■に示すように、マスク基板４１を、
Ａｕパターン４５を下側にして治具４８に固定し、これ
を、フッ酸、硝酸、リン酸の混液からなるＳｉエツチン
グ液４９に浸漬して、耐酸性薄膜４７をマスクとしてマ
スク基板４１の中央部のＳｉを除去する。FIG. 4 schematically shows the manufacturing process of an X-ray mask according to an embodiment of the present invention. First, as shown in ■, the outer diameter D
Disc-shaped Si wafer 4 with □ of 50 m and thickness T of 500 tones
A mask substrate is manufactured by grinding a stepped surface 43 having a diameter D2 of 40 mm and a t of 200 on the outer circumferential surface of the mask substrate 1. Next, in (■), an X-ray transparent film 44 with a thickness of 4 pm
was formed by high frequency sputtering using one of BN, SiO2, Si3N3, etc. as a material, and then an Au film with a thickness of 1 pm was further deposited by vacuum evaporation,
This is subjected to dry etching to form an Au pattern 45 in a predetermined shape. Next, as shown in (2), the mask substrate 41 is placed upside down on a jig 46, and an acid-resistant thin film 47 is deposited on the back surface of the mask substrate by high-frequency sputtering. remove. Next, as shown in ■, the mask substrate 41 is
The Au pattern 45 is fixed to a jig 48 with the lower side, and this is immersed in a Si etching solution 49 made of a mixture of hydrofluoric acid, nitric acid, and phosphoric acid, and the center of the mask substrate 41 is etched using the acid-resistant thin film 47 as a mask. Remove Si from the parts.
上記工程の中で、マスク基板４１に段差面４３を設けた
ことにより、薄膜４４、Ａｕパターン４５が治具４６．
４８に接触することがなく、パターン欠陥の少ないＸ線
マスクを高歩留りで作製することができるようになる・
なお、上記第４図実施例では、段差面４３をマスク基板
４１の外周部を研削することによって形成したが、同様
の段差面は、第１図に示した従来の支持枠１を第１支持
枠とし、この第１支持枠の外径よりも径の大きい第２支
持枠とし、これらの第１支持枠と第２支持枠とを一体的
に接着することによっても得られる。この構成によれば
、第４図の場合に比べてより簡易な製作工程で本発明の
Ｘ線マスクが得られる利点がある。In the above steps, by providing the step surface 43 on the mask substrate 41, the thin film 44 and the Au pattern 45 are formed on the jig 46.
48, making it possible to produce an X-ray mask with fewer pattern defects at a high yield. In the embodiment shown in FIG. However, a similar step surface is formed by using the conventional support frame 1 shown in FIG. It can also be obtained by bonding these first support frame and second support frame together. This configuration has the advantage that the X-ray mask of the present invention can be obtained through a simpler manufacturing process than the case shown in FIG.
さらに、上記実施例によれば、いずれの製作工程による
場合も、段差部の底面は、正確な平坦面となる。段差部
の底面が正確な平坦面となることは、マスク表面３６と
レジスト面との間の空隙長を、段差部の底面とレジスト
面との間の空隙長で規制できることになり有利である。Further, according to the above embodiment, the bottom surface of the stepped portion becomes an accurately flat surface regardless of the manufacturing process. It is advantageous for the bottom surface of the stepped portion to be a precisely flat surface because the gap length between the mask surface 36 and the resist surface can be regulated by the gap length between the bottom surface of the stepped portion and the resist surface.
しかし、本発明はこれに限定されず、平坦な底面を持つ
段差部を支持枠の外周を−まわりするように設けること
は必ずしも必要ではなく、支持枠の外縁部の複数個所に
、任意の断面形状を持つ段差部を設ける構成としても、
本発明の目的は達成される。However, the present invention is not limited to this, and it is not necessarily necessary to provide a step portion having a flat bottom surface so as to go around the outer periphery of the support frame. Even as a configuration with a stepped portion having a shape,
The objectives of the invention are achieved.
以上説明したように１本発明によれば、Ｘ線マスクに付
着する塵埃等によるマスクとウェハ間の間隙精度の劣化
がなくなりパターン転写劣化や転写パターン欠陥が大幅
に低減でき、高精度パターン転写が高歩留りで可能とな
り、さらに、マスク製作プロセスでのマスクの取扱いが
容易になることから、マスク作製の歩留りも向上する。As explained above, according to the present invention, the deterioration of the gap accuracy between the mask and the wafer due to dust adhering to the X-ray mask can be eliminated, pattern transfer deterioration and transferred pattern defects can be significantly reduced, and high-precision pattern transfer can be achieved. This is possible with a high yield, and furthermore, since the mask becomes easier to handle in the mask manufacturing process, the yield of mask manufacturing also improves.
第１図は従来のＸ線マスクの断面図、第２図はＸ線リソ
グラフィによるパターン転写の一般説明図、第３図は本
発明の一実施例を示す断面図、第４図は本発明における
Ｘ線マスクの作製工程の一例を説明する断面図である。
符号の説明
１．２４．３４・・支持枠 ２．２５．３５．４４・・
薄膜２′、２“・・・Ｘ線マスクの試料基板に接近させ
たくない部分
３．２６．３３．４５・・パターン
２１・・・Ｘ線源 ２２・・・マスクホルダ２３・・Ｘ
線マスク
２７・・・Ｓｉウェハ（試料基板）
２８・・・レジスト層 ３６・・・マスク表面３７．４
３・・・段差面 ３８・・・支持枠裏面４６．４８・・
治具 ４７・・・耐酸性薄膜４９・・・エツチング液
代理人弁理士 中村 純之助
矛１図
（ｂ）
矛２図
ｆ
′８Ｐ３図
第４図
第１頁の続き
＠発明者 大鉢 香化 国分寺市東３
央研究所内FIG. 1 is a cross-sectional view of a conventional X-ray mask, FIG. 2 is a general explanatory diagram of pattern transfer by X-ray lithography, FIG. 3 is a cross-sectional view showing an embodiment of the present invention, and FIG. FIG. 3 is a cross-sectional view illustrating an example of an X-ray mask manufacturing process. Explanation of symbols 1.24.34...Support frame 2.25.35.44...
Thin film 2', 2''... Portions of the X-ray mask that should not be brought close to the sample substrate 3.26.33.45... Pattern 21... X-ray source 22... Mask holder 23...
Line mask 27...Si wafer (sample substrate) 28...Resist layer 36...Mask surface 37.4
3...Step surface 38...Back surface of support frame 46.48...
Jig 47... Acid-resistant thin film 49... Etching liquid Agent Junnosuke Nakamura Figure 1 (b) Figure 2 f '8P3 Figure 4 Continued from page 1 @ Inventor Koka Ohachi Kokubunji Ichihigashi 3 Central Research Institute
Claims (2)
料基板面に転写しようとするパターンをＸ線透過性の低
い材料で形成し、この薄膜をその周辺部においてリング
状の支持枠で支持する構成のＸ線マスクにおいて、上記
支持枠は上記薄膜の前記パターンが形成された領域の外
径より大きい外径に作られ、その薄膜外径より外方に位
置する外縁部の少なくとも一部に、上記薄膜のパターン
形成面に対して凹なる部分を備えたことを特徴とするＸ
線マスク。(1)X)! The pattern to be transferred onto the sample substrate surface is formed on a thin film made of a highly transparent material using a material with low X-ray transparency, and this thin film is supported by a ring-shaped support frame around the thin film. In the X-ray mask, the support frame is made to have an outer diameter larger than the outer diameter of the region of the thin film where the pattern is formed, and the thin film is attached to at least a part of the outer edge located outside the thin film outer diameter. X characterized by having a concave portion with respect to the pattern forming surface of
line mask.
域の外径より大きいリング状の板よりなる第１支持枠と
、内径が上記第１支持枠の内径にほぼ等しく外径が上記
第１支持枠より大きいリング状の板より成４糖２支持枠
とを一体的に接着して成る支持枠であることを特徴とす
る特許請求の範囲第１項記載のＸ線マスク。(2) The support frame includes a first support frame formed of a ring-shaped plate whose inner diameter is larger than the outer diameter of the pattern forming area of the thin film, and a first support frame whose inner diameter is approximately equal to the inner diameter of the first support frame and whose outer diameter is approximately equal to the inner diameter of the first support frame. 2. The X-ray mask according to claim 1, wherein the support frame is formed by integrally adhering two tetrasaccharide support frames from a ring-shaped plate larger than one support frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59107583A JPS60251620A (en) | 1984-05-29 | 1984-05-29 | X-ray mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59107583A JPS60251620A (en) | 1984-05-29 | 1984-05-29 | X-ray mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60251620A true JPS60251620A (en) | 1985-12-12 |
Family
ID=14462839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59107583A Pending JPS60251620A (en) | 1984-05-29 | 1984-05-29 | X-ray mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60251620A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6249623A (en) * | 1985-07-19 | 1987-03-04 | Nec Corp | X-ray exposure mask |
| JPH0217627A (en) * | 1988-07-06 | 1990-01-22 | Fujitsu Ltd | X-ray aligner |
| JPH02202011A (en) * | 1989-01-31 | 1990-08-10 | Yamaha Corp | Mask material for x-ray lithography |
| US6317480B1 (en) | 1998-04-24 | 2001-11-13 | Hoya Corporation | Method of manufacturing X-ray mask and X-ray mask blank, and X-ray mask and X-ray mask blank manufactured thereby |
-
1984
- 1984-05-29 JP JP59107583A patent/JPS60251620A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6249623A (en) * | 1985-07-19 | 1987-03-04 | Nec Corp | X-ray exposure mask |
| JPH0217627A (en) * | 1988-07-06 | 1990-01-22 | Fujitsu Ltd | X-ray aligner |
| JPH02202011A (en) * | 1989-01-31 | 1990-08-10 | Yamaha Corp | Mask material for x-ray lithography |
| US6317480B1 (en) | 1998-04-24 | 2001-11-13 | Hoya Corporation | Method of manufacturing X-ray mask and X-ray mask blank, and X-ray mask and X-ray mask blank manufactured thereby |
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