JPH03163848A - Vacuum suction base - Google Patents
Vacuum suction baseInfo
- Publication number
- JPH03163848A JPH03163848A JP1302176A JP30217689A JPH03163848A JP H03163848 A JPH03163848 A JP H03163848A JP 1302176 A JP1302176 A JP 1302176A JP 30217689 A JP30217689 A JP 30217689A JP H03163848 A JPH03163848 A JP H03163848A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- projections
- vacuum suction
- outer peripheral
- peripheral part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 56
- 230000002093 peripheral effect Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 239000000428 dust Substances 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 10
- 238000005498 polishing Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000004304 visual acuity Effects 0.000 description 2
- 235000010799 Cucumis sativus var sativus Nutrition 0.000 description 1
- 244000299906 Cucumis sativus var. sativus Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
Abstract
Description
【発明の詳細な説明】
〔産業」二の利用分野〕
本発明は、半導体エ］コ積同路の製造に使用される縮小
投影露光装置等におけるウェハ固定含に係り、特に平坦
度を高く、半導体ウェハを真空吸着固定するのに好適な
真空吸着台に関する。[Detailed Description of the Invention] [Field of Application in Industry] The present invention relates to a method for fixing a wafer in a reduction projection exposure apparatus or the like used in the production of semiconductor semiconductors and circuits. The present invention relates to a vacuum suction table suitable for vacuum suction fixing of semiconductor wafers.
第４図に縮小投影露光装両の概略を示す。゛ｒ．導休ウ
ェハ（以下ウェハと）Ｉ’＜）ｌは搬送アーｌ１１６の
先端に設けられている真空ピンセッ１−で吸着され、旋
回モータ１−７が同転し、ＸＹステージ１８上に配置さ
れたウェハ吸若台６上に乗せられ真空吸着固定される。FIG. 4 shows an outline of the reduction projection exposure system.゛r. The resting wafer (hereinafter referred to as wafer) I'<)l was attracted by the vacuum tweezers 1- provided at the tip of the transfer arm 116, the rotation motor 1-7 rotated at the same time, and the wafer was placed on the XY stage 18. The wafer is placed on the wafer suction stand 6 and fixed by vacuum suction.
ＸＹステージ１８は露光７１−リツクスに従って移動す
る。The XY stage 18 moves according to the exposure 71-rix.
マスク１９の回路パターンは、縮小レンズ２０により縮
小され、ウェハ１上に投影露光される。The circuit pattern on the mask 19 is reduced by a reduction lens 20 and projected onto the wafer 1 for exposure.
縮小段影露光装置における評価性能の↓つとして解像力
があげられる。解像力は半導体集積回路のパターンの最
小線巾を左右し、この最小線１１１が半導体集積回路の
集積度を決定する。One of the performance evaluations of reduced step shadow exposure equipment is resolution. The resolution affects the minimum line width of the pattern of a semiconductor integrated circuit, and this minimum line 111 determines the degree of integration of the semiconductor integrated circuit.
解像力は、縮小レンズ２０の開口数（以下ＮＡと記すこ
ととする）と露光光の波長λにより決定し解像力Ｒは
λ
で示される。従って半導体集積回路の集積度を」二げる
ため高解像力を持った縮小レンズ、すなわちＮＡの大き
な縮小レンズを使用するようになってきた。The resolving power is determined by the numerical aperture (hereinafter referred to as NA) of the reduction lens 20 and the wavelength λ of the exposure light, and the resolving power R is indicated by λ. Therefore, in order to increase the degree of integration of semiconductor integrated circuits, reduction lenses with high resolution, that is, reduction lenses with large NA have been used.
一方、縮小レンズの焦点深度１）は、
で示され、高解像力を得るためにＮＡを大きくとると、
その自乗で焦点深瓜が浅くなる。On the other hand, the depth of focus 1) of the reduction lens is expressed as follows, and if the NA is set large to obtain high resolution,
The focal cucumber becomes shallower by its square.
回路パターンが焼き付けられるウェハは，露光領域にお
いて、焦点深度１〕以下の’Ｖ｝ｔｌ度となるよう、真
空吸着台により真仝吸着１？ｉｌ定する必要がある。The wafer on which the circuit pattern is to be printed is truly suctioned using a vacuum suction table so that the depth of focus is less than or equal to the depth of focus (1) in the exposure area. It is necessary to determine the illumination.
従来の真空吸着台は、第５同に示すようにアルミニウム
等の金属を機械切削加工し、表面に硬化処理又は硬質メ
ッキを施し、さらにウェハ吸着面の平坦度を出すために
、ラツビング加］二を行っていた。また、ウェハ吸着面
はウェハとの接触面積を少なくするため、第６図に示す
ような四角錐の形状に切削していた。As shown in Section 5, conventional vacuum suction tables are machined from metal such as aluminum, hardened or hard plated on the surface, and then subjected to rubbing to ensure flatness of the wafer suction surface. was going on. Further, the wafer suction surface was cut into a square pyramid shape as shown in FIG. 6 in order to reduce the contact area with the wafer.
上記従来技術は、軟質金属に機械加−［を施して製作す
るため、切削工具のニゲを設ける必要から突起部と外周
部とのピッチを３冊以十とる必要があり、ウェハを真空
吸着する際、ウェハはＪ−ｉ辺部．｛
において第７図に示すような変形をし、ウェハ１ｌ坦度
低下の要因となっていた。The above conventional technology is manufactured by machining soft metal, so it is necessary to provide a gap for the cutting tool, so the pitch between the protrusion and the outer periphery needs to be more than 3, and the wafer is vacuum-adsorbed. At this time, the wafer is placed on the J-i side. { In this case, deformation as shown in FIG. 7 occurred, which caused a decrease in the flatness of the wafer 1l.
また上記従来技術は、ウェハとの接触部の硬度を」二げ
るため、軟質金属の表面に硬化処理または硬質メッキを
行なっているが、第９図に示すような硬化処理層の剥離
，欠けが発生しウェハ平川度低下及び塵埃発生の要因と
なっており、またウェハ吸着面にラツピング加工を施し
平坦度向七を図っていたが、その平担度は１０分の数μ
ｍ程度であり、サブミクロン線幅が要求されるデバイス
に対応するためには、平坦度が不足していた。Furthermore, in the above conventional technology, in order to reduce the hardness of the contact area with the wafer, hardening treatment or hard plating is performed on the surface of the soft metal. However, as shown in FIG. This caused the wafer flatness to decrease and dust to be generated.Furthermore, the wafer suction surface was wrapped to improve the flatness, but the flatness was only a few tenths of a μ.
The flatness was insufficient to support devices requiring submicron line widths.
また−１―記従来技術は、製造工程が複雑で、かつ機械
加工に時間を要するため、形状が複卸で、かつ原価高と
なっていた。In addition, the conventional technology described in -1- has a complicated manufacturing process and requires time for machining, resulting in multiple shapes and high costs.
本発明の目的は、化学切削性ガラスに微細ホ１・エッチ
ング法を適用し，突起部と外周部とのピッチを１ ｎｗ
ｎ以下にすることにより、図に示すように真空吸着時の
ウェハの変形を低減し、〜エハの高平坦化を図るととも
に製造工程を簡素化し構造を単純化することにより、原
価低減を図ることにある。The purpose of the present invention is to apply a fine hole etching method to chemically cuttable glass, and to reduce the pitch between the protrusion and the outer periphery to 1 nw.
By making it less than n, as shown in the figure, the deformation of the wafer during vacuum suction is reduced, and the wafer is highly flattened, and the manufacturing process is simplified and the structure is simplified to reduce costs. It is in.
（？ｌ！Ｉ題を解決するための手段・〕上記目的は、化
学切削性ガラスに精密ホ１−エッチング加工を行なうこ
とにより、ウェハ吸着面に外周部及び外周部とのピッチ
がＩＩｌｗ１以下でありかつ相互のピツチ２ＩｎｌＩ１
以下で配列された複数の微細ピン形状突起部を形成し、
熱処理を行いガラスをセラミックス化し硬度をウェハ裏
而より高くした後、外周部及び突起部−１一面にガラス
研磨加１二を施すことにより達戊される。(Means for solving the ?l!I problem) The above purpose is to perform precision etching processing on chemically machinable glass so that the pitch between the outer periphery and the outer periphery of the wafer suction surface is less than IIlw1. Possible and mutual pitch 2InlI1
Forming a plurality of micro pin-shaped protrusions arranged below,
After heat treatment is performed to convert the glass into a ceramic and to make the hardness higher than that of the wafer, the outer circumferential portion and the entire surface of the protruding portion 1 are polished by glass polishing.
ウェハ吸着面は、第１図に示すようなピン形状が外周部
とのピツチ］． ＋ｎｎ以下で配列されている．，この
ピン形状は、化・゛ｌ：切削４／１゛ガラスを情密ホト
エッチングすることにより得られる。それによってウェ
ハの吸着による外周部付近の変形を低減することができ
る。The wafer suction surface has a pin shape as shown in Fig. 1 and has a pitch with the outer circumference]. Arranged below +nn. , this pin shape is obtained by densely photo-etching the chemical-cut 4/1 glass. This makes it possible to reduce deformation near the outer periphery due to wafer adsorption.
ウェハ吸若而の・１／世化加［は、脆＋！１＋オ料の加
−１二技術を利用する。ガラス等脆仕材料の加工は、ミ
ラーに代表されるように平坦化加工に適し、ウェハ吸着
面の平坦度、百分の数μ１ｎとすることが町能である。Wafer sucking and 1/Seikaka [ha, brittle +! Use the 1 + 1 + 1 + 2 technique. The processing of brittle materials such as glass is suitable for flattening, as typified by mirrors, and it is common practice to set the flatness of the wafer suction surface to several hundredths of μ1n.
化ｐＹ，切削性ガラスは熱処理を行なうことによりセラ
ミックス化し、高硬度となる。ウェハとの接触によるウ
ェハ吸着面の平坦度低ドを抑えるため平坦化加工前に熱
処理を行ないセラミックス化することにより、さらに高
硬度，高ｖｔ；Ｈ度の真空吸着台を得ることが可能とな
る。By heat-treating the pY, machinable glass, it becomes a ceramic and becomes highly hard. In order to suppress the flatness of the wafer suction surface due to contact with the wafer, heat treatment is performed before flattening to make it ceramic, making it possible to obtain a vacuum suction table with even higher hardness and higher Vt; H degree. .
以下、本発明の−・実施例を第１図〜第３同により説明
する，，
第１図に本発明の一実施例の概観を示す。ウェハ吸着面
は、外周部２，ビン部より構或され、真空孔４及び底部
５を真空とすることにより、ウェハ」裏面を真空吸着し
、ウェハ吸着台６上に同定する。Embodiments of the present invention will be described below with reference to FIGS. 1 to 3. FIG. 1 shows an overview of an embodiment of the present invention. The wafer suction surface is composed of an outer peripheral part 2 and a bottle part, and by evacuating the vacuum hole 4 and the bottom part 5, the back surface of the wafer is vacuum suctioned and placed on the wafer suction table 6.
ウェハが真空吸着された時の変形を考處して、突起部と
外周部のピッチをＬ ｍｍ以ｆとし、突起部問ピッチを
２ ｏｗｎ以ドとする。また、異物付着に対する効果を
向−■ニさせるため突起部３の面積を小さ７
くする必要があるが、平坦化加工における力［ドＪニ荷
重による破損を防止する」一から、外周部幅及び突起部
直径０ ． ５ ｎＩ＋＋以下とする。このときウエノ
＼吸着面とウェハとの接触面積は、ウエノ＼而私の数％
となっており、吸着時のウエノ＼の変形及び異物に対す
る影響を十分防ぐことが可能である。Taking into consideration deformation when the wafer is vacuum-adsorbed, the pitch between the protrusions and the outer circumferential portion is set to L mm or less, and the pitch between the protrusions is set to 2 own or less. In addition, in order to improve the effect on foreign matter adhesion, it is necessary to reduce the area of the protrusion 3, but the outer peripheral width and protrusion diameter 0. 5 nI++ or less. At this time, the contact area between the suction surface of Ueno and the wafer is a few percent of Ueno's suction surface and the wafer.
Therefore, it is possible to sufficiently prevent the deformation of Ueno\ and the influence of foreign substances during adsorption.
第２図にウェハ吸着面形状形或法を；Ｊ；す。まず紫外
線照射器９を用い化学切削ｒｌガラス素林１３」二にウ
ェハ吸着面形状を露光する。Figure 2 shows the shape of the wafer suction surface. First, an ultraviolet irradiator 9 is used to expose the shape of the wafer adsorption surface on the chemically cut RL glass substrate 13''.
ランブ１０より出た紫外線は、ウエノ＼吸若面形状が描
かれたマスク１２を照射し、その像を化？７：切削性ガ
ラス素材１３−｝：に投影する。The ultraviolet rays emitted from the lamp 10 irradiate the mask 12 on which the Ueno\absorbing surface shape is drawn, and the image is transformed into a mask. 7: Project on cuttable glass material 13-}:.
次に、紫外線照射後の化学切削性ガラス素月土３にエッ
チング液を吹付けろことにより、紫外線照射を受けた部
分は削られ、紫外線照剃を受けなかった部分は残り、ウ
ェハ吸着面形状が形威される。Next, spray an etching solution onto the chemically cuttable glass substrate 3 after irradiation with ultraviolet rays.By this, the portions that were irradiated with ultraviolet rays are etched away, and the portions that were not shaved with ultraviolet rays remain, thereby changing the shape of the wafer suction surface. Formally imposing.
ウェハ吸着面のｓｙ坦化は第３図に示すように、研磨皿
１４及び研磨液１５とを用いて行なう。The sy-planarization of the wafer suction surface is performed using a polishing dish 14 and a polishing liquid 15, as shown in FIG.
高硬度化のため、ＩＶ川化加王前に熱処理を行な８
い，化学切削性ガラス素材１３をセラミックス化するこ
とにより、さらに高平坦度のウェハ吸着面を得ることが
可能となる。In order to increase the hardness, a heat treatment is performed before the IV coating to make the chemically machinable glass material 13 a ceramic material, thereby making it possible to obtain a wafer suction surface with even higher flatness.
本発明によれば、ウェハ吸着面平坦度を百分の数μｍと
することができるので、ウェハを０．１μｍ以下の平坦
度で吸引固定でき、しかもウェハを直径０．５ｍｍ以下
の突起部及び幅０．５ｎｗｎ以下の外周部で支持するた
め、塵埃等の介在による平坦度の悪化も防止できるので
、サブミクロン線幅のパターン形成を必要とする高集積
デバイス製造装置の試料台に適用する上で効果がある。According to the present invention, the flatness of the wafer suction surface can be reduced to several hundredths of a μm, so the wafer can be suctioned and fixed with a flatness of 0.1 μm or less. Since it is supported at the outer periphery with a width of 0.5nwn or less, deterioration of flatness due to intervening dust etc. can be prevented, so it is suitable for use in sample stands of highly integrated device manufacturing equipment that requires pattern formation with submicron line widths. It is effective.
第１図は本発明の一実旅例の概略図、第２図は紫外線照
射によるウェハ吸着面形状形成広の説明図、第３図はウ
ェハ吸着面平坦化加工の説明図、第４図は縮小投影露光
装置の概略図、第５図は従来技術を示す概略図、第６図
は従来技術による突起部の概略図，第７図は従来技術に
よるウェハ吸着状態図、第８図は本発明チャックによる
ウェハ吸着状態図、第９図は従来技術による真空チャッ
クの突起部平坦度低下状態図である。
１・・・ウェハ、２・・・外周部、３・・突起部、４・
・・真空孔、５・・・底部、６・・ウェハ吸着台、７・
・プラグ、８・・・チューブ、９・・・紫外線照射器、
１０・・・ランプ、１ｌ・・照明系、１２・・・マスク
，１３・・・化学切削性ガラス素材、１４・・研磨皿、
１５・・・研磨液、↓６・・アーム、１７・・・旋回モ
ータ、１８・・・ＸＹステージ、１９・・・回路バタン
マスク、２０・・・縮小レンズ、２１・・・照明系、２
２・・・ウェハカセツ１・、２３・・・搬送ベルト、２
４・・・金属製ウェハ吸着台、２５・・ウェハ吸着面、
２６・・・ピン。Fig. 1 is a schematic diagram of a practical example of the present invention, Fig. 2 is an explanatory diagram of forming the shape of the wafer suction surface by ultraviolet irradiation, Fig. 3 is an explanatory diagram of flattening the wafer suction surface, and Fig. 4 is an illustration of the process of flattening the wafer suction surface. A schematic diagram of a reduction projection exposure apparatus, FIG. 5 is a schematic diagram showing a conventional technique, FIG. 6 is a schematic diagram of a projection according to the conventional technique, FIG. 7 is a diagram of a wafer suction state according to the conventional technique, and FIG. 8 is a diagram showing the present invention. FIG. 9 is a diagram illustrating a state in which a wafer is attracted by a chuck, and FIG. 9 is a diagram illustrating a state in which the flatness of a protrusion of a vacuum chuck according to the prior art decreases. DESCRIPTION OF SYMBOLS 1...Wafer, 2...Outer periphery, 3...Protrusion, 4...
・・Vacuum hole, 5・Bottom, 6・Wafer adsorption stand, 7・
・Plug, 8...tube, 9...ultraviolet irradiator,
10...Lamp, 1l...Lighting system, 12...Mask, 13...Chemical cutting glass material, 14...Polishing plate,
15... Polishing liquid, ↓6... Arm, 17... Rotating motor, 18... XY stage, 19... Circuit slam mask, 20... Reducing lens, 21... Illumination system, 2
2...Wafer cassette 1, 23...Transport belt, 2
4... Metal wafer suction stand, 25... Wafer suction surface,
26...pin.
Claims (1)
個の突起部の先端と該突起部を包含する外周部の上端と
に接するように板状試料を設置することにより板状試料
裏面を外周部に包含された空間を負圧にして吸引固定す
る真空吸着台において突起部と外周部とを近接すること
を特徴とする真空吸着台。 ２、複数個の突起部において、該形状を円柱形状とした
ことを特徴とする特許請求の範囲第１項記載の真空吸着
台。 ３、複数個の突起部を包含する外周部において、外周部
幅を０．５ｍｍ以下にすることを特徴とする特許請求の
範囲第１項又は第２項記載の真空吸着台。 ４、微細ホトエッチング法により製作することを可能と
する化学切削性ガラスを素材として用いることを特徴と
する特許請求の範囲第３項記載の真空吸着台。 ５、板状試料を半導体ウェハとすることを特徴とする特
許請求範囲第３項又は第４項記載の真空吸着台。 ６、素材となるガラスに熱処理を施し、ガラスをセラミ
ックス化することにより、ウェハ裏面より硬度を高くす
ることを特徴とする特許請求の範囲第５項記載の真空吸
着台。[Claims] 1. By installing a plate-shaped sample so as to touch the tips of a plurality of protrusions arranged on the same plane at a pitch of 2 mm or less and the upper end of the outer periphery that includes the protrusions. A vacuum suction table for suctioning and fixing the back surface of a plate-shaped sample by applying negative pressure to a space included in the outer circumference, the vacuum suction table having a protrusion and an outer circumference in close proximity to each other. 2. The vacuum suction table according to claim 1, wherein the plurality of protrusions have a cylindrical shape. 3. The vacuum suction table according to claim 1 or 2, characterized in that the width of the outer periphery including the plurality of protrusions is 0.5 mm or less. 4. The vacuum suction table according to claim 3, characterized in that chemically machinable glass, which can be manufactured by a fine photoetching method, is used as a material. 5. The vacuum suction table according to claim 3 or 4, wherein the plate-shaped sample is a semiconductor wafer. 6. The vacuum suction table according to claim 5, wherein the glass material is heat-treated to make the glass a ceramic material, thereby making the glass harder than the back surface of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1302176A JPH03163848A (en) | 1989-11-22 | 1989-11-22 | Vacuum suction base |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1302176A JPH03163848A (en) | 1989-11-22 | 1989-11-22 | Vacuum suction base |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03163848A true JPH03163848A (en) | 1991-07-15 |
Family
ID=17905845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1302176A Pending JPH03163848A (en) | 1989-11-22 | 1989-11-22 | Vacuum suction base |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03163848A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001056074A1 (en) * | 2000-01-28 | 2001-08-02 | Hitachi Tokyo Electronics Co., Ltd. | Wafer chuck, exposure system, and method of manufacturing semiconductor device |
| JP2003142566A (en) * | 2001-11-07 | 2003-05-16 | New Creation Co Ltd | Vacuum sucker and its manufacturing method |
| JP2004343110A (en) * | 2003-05-09 | 2004-12-02 | Asml Netherlands Bv | Lithography apparatus, manufacturing method of device, and device manufactured by it |
| JP2009111243A (en) * | 2007-10-31 | 2009-05-21 | Toto Ltd | Electrostatic chuck |
| JP2012028539A (en) * | 2010-07-23 | 2012-02-09 | Ngk Spark Plug Co Ltd | Ceramic joined body |
-
1989
- 1989-11-22 JP JP1302176A patent/JPH03163848A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001056074A1 (en) * | 2000-01-28 | 2001-08-02 | Hitachi Tokyo Electronics Co., Ltd. | Wafer chuck, exposure system, and method of manufacturing semiconductor device |
| US6664549B2 (en) | 2000-01-28 | 2003-12-16 | Hitachi Tokyo Electronics Co., Ltd. | Wafer chuck, exposure system, and method of manufacturing semiconductor device |
| KR100804006B1 (en) * | 2000-01-28 | 2008-02-18 | 히다치 도쿄 에렉트로닉스 가부시키가이샤 | Wafer chuck, exposure system, and method of manufacturing semiconductor device |
| KR100886399B1 (en) * | 2000-01-28 | 2009-03-02 | 히다치 도쿄 에렉트로닉스 가부시키가이샤 | Method of manufacturing semiconductor device |
| JP2010166085A (en) * | 2000-01-28 | 2010-07-29 | Renesas Eastern Japan Semiconductor Inc | Wafer chuck and exposure apparatus using the same, and method for manufacturing semiconductor device |
| JP2003142566A (en) * | 2001-11-07 | 2003-05-16 | New Creation Co Ltd | Vacuum sucker and its manufacturing method |
| JP2004343110A (en) * | 2003-05-09 | 2004-12-02 | Asml Netherlands Bv | Lithography apparatus, manufacturing method of device, and device manufactured by it |
| JP2008010886A (en) * | 2003-05-09 | 2008-01-17 | Asml Netherlands Bv | Lithographic equipment, and device manufacturing method |
| US7327438B2 (en) | 2003-05-09 | 2008-02-05 | Asml Netherlands B.V. | Lithographic apparatus and method of a manufacturing device |
| JP4667433B2 (en) * | 2003-05-09 | 2011-04-13 | エーエスエムエル ネザーランズ ビー．ブイ． | Lithographic apparatus and device manufacturing method |
| JP2009111243A (en) * | 2007-10-31 | 2009-05-21 | Toto Ltd | Electrostatic chuck |
| JP2012028539A (en) * | 2010-07-23 | 2012-02-09 | Ngk Spark Plug Co Ltd | Ceramic joined body |
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