JP2003142566A - Vacuum sucker and its manufacturing method - Google Patents
Vacuum sucker and its manufacturing methodInfo
- Publication number
- JP2003142566A JP2003142566A JP2001342302A JP2001342302A JP2003142566A JP 2003142566 A JP2003142566 A JP 2003142566A JP 2001342302 A JP2001342302 A JP 2001342302A JP 2001342302 A JP2001342302 A JP 2001342302A JP 2003142566 A JP2003142566 A JP 2003142566A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- vacuum suction
- vacuum
- protrusions
- seal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Gripping Jigs, Holding Jigs, And Positioning Jigs (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明は、LSI製造工程
に使用される真空吸着装置に関し、さらに詳しくは真空
吸着器及びその製造方法に係るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum suction device used in an LSI manufacturing process, and more particularly to a vacuum suction device and a manufacturing method thereof.
【0002】[0002]
【従来の技術】従来、LSI製造装置における試料保持
のために真空吸着装置が使用されている。この真空吸着
装置における真空吸着器は図3(a)及び(b)に示す
ような構造を有している。2. Description of the Related Art Conventionally, a vacuum suction device has been used for holding a sample in an LSI manufacturing apparatus. The vacuum suction device in this vacuum suction device has a structure as shown in FIGS. 3 (a) and 3 (b).
【0003】この真空吸着器の構造の詳細を説明すれ
ば、この真空吸着器200は真空吸着部210とシール
部220とを備えている。真空吸着部210はシール部
220によって取り囲まれている。この真空吸着部21
0はシール部220に対して凹んだ状態に形成されてい
る。真空吸着部210の底面には多数の突子211が植
設されている。多数の突子211は試料(例えば半導体
ウェーハ)230の真空吸着の際に試料の裏面を支持す
る働きをする。一方、シール部220は前記突子211
の先端を連ねた面と面一となるように構成されている。
このシール部220は試料(例えば半導体ウェーハ)の
真空吸着の際に試料の周縁部を支持する働きをする。The structure of the vacuum suction device will be described in detail. The vacuum suction device 200 includes a vacuum suction portion 210 and a seal portion 220. The vacuum suction part 210 is surrounded by the seal part 220. This vacuum suction unit 21
0 is formed so as to be recessed with respect to the seal portion 220. A large number of protrusions 211 are planted on the bottom surface of the vacuum suction unit 210. The multiple protrusions 211 serve to support the back surface of the sample (for example, a semiconductor wafer) 230 when the sample 230 is vacuum-sucked. On the other hand, the seal part 220 is the protrusion 211.
It is configured to be flush with the surface that connects the tips of the.
The seal portion 220 has a function of supporting the peripheral portion of the sample (for example, a semiconductor wafer) when the sample is vacuum-sucked.
【0004】[0004]
【発明が解決しようとする課題】真空吸着器210にお
けるシール部220は、その上面が仕上げ加工されて高
精度な面(中心線平均粗さRaで0.2μm以下)とな
っている。なぜなら、真空吸着部210に多数の突子2
11を付設した後、その多数の突子211とシール部2
20の上面とを面一とするためにラップ仕上げが施され
るからである。しかし、前記真空吸着器200によれ
ば、シール部220上面にダスト等が付着した場合、ダ
スト等が付着したままで試料230を吸着すると、試料
230の周縁部がダスト等の影響により部分的に変形
し、試料230の周縁部を高精度な平面に矯正できない
という問題があった。The upper surface of the seal portion 220 of the vacuum suction device 210 is finished to form a highly accurate surface (center line average roughness Ra of 0.2 μm or less). Because of the large number of protrusions 2 in the vacuum suction unit 210.
After attaching 11, the large number of the protrusions 211 and the sealing portion 2
This is because lap finishing is performed so as to be flush with the upper surface of 20. However, according to the vacuum suction device 200, when dust or the like adheres to the upper surface of the seal portion 220 and the sample 230 is sucked while the dust or the like remains, the peripheral portion of the sample 230 is partially affected by the dust or the like. There was a problem that the sample was deformed and the peripheral portion of the sample 230 could not be corrected into a highly accurate flat surface.
【0005】この問題を解消するため、シール部220
にも突子を付設し、前記真空吸着部210の多数の突子
211とシール部の突子によって試料230の裏面を支
持させるようにした真空吸着器が考えられている。この
真空吸着器によれば、試料230の周縁部も突子によっ
て支持され、シール部に付着するダスト等の多くはその
突子の間の隙間に落ち込むことになる。その結果とし
て、突子に付着するダスト等が少なくなり、その分だ
け、試料230の周縁部を高精度な平面に矯正できるこ
とになる。しかし、この真空吸着器によれば、シール部
220への突子の付設作業に時間がかかるという問題が
あった。また、突子の付設作業後に突子上面を面一とす
るために行うラップ仕上げにより、シール部の突子高さ
がばらつき、低すぎる場合にはゴミ噛みが生じ、高すぎ
るとシール部からのリーク等が生じ、歩留りを悪くする
要因となっていた。To solve this problem, the seal portion 220
Also, a vacuum suction device in which a projection is additionally provided and the back surface of the sample 230 is supported by the multiple projections 211 of the vacuum suction section 210 and the projections of the seal section is considered. According to this vacuum suction device, the peripheral portion of the sample 230 is also supported by the protrusions, and most of the dust and the like adhering to the seal portion falls into the gap between the protrusions. As a result, the amount of dust and the like attached to the protrusions is reduced, and the peripheral portion of the sample 230 can be corrected to a highly accurate flat surface accordingly. However, according to this vacuum suction device, there is a problem that it takes time to attach the protrusion to the seal portion 220. In addition, due to the lapping that is performed to make the upper surface of the protrusion flush after the attachment work of the protrusion, the height of the protrusion of the seal part varies, and dust clogging occurs if it is too low. Leaks and the like have been a factor that deteriorates the yield.
【0006】本発明は、かかる問題点に鑑みなされたも
ので、試料の周縁部を高精度な表面に矯正できると共
に、製造が容易で歩留りが良い真空吸着器及びその製造
方法を提供することを課題とする。The present invention has been made in view of the above problems, and it is an object of the present invention to provide a vacuum suction device which can correct the peripheral portion of a sample to a highly accurate surface, is easy to manufacture, and has a high yield, and a manufacturing method thereof. It is an issue.
【0007】[0007]
【課題を解決するための手段】本発明に係る真空吸着器
は、試料の裏面の周縁部以外の部分を支持する多数の突
子が付設された真空吸着部と、前記真空吸着部を取り囲
んで設けられ前記試料の周縁部を支持するシール部とを
備える真空吸着器において、前記シール部の試料支持部
分の面粗さを中心線平均粗さRaで1〜20μmとした
ものである。この範囲に設定したのは、中心線平均粗さ
Raが1μm未満であるとゴミ噛みの影響がでる可能性
があること、一方、中心線平均粗さRaが20μmを超
えるとシール部からのリークが大きくなり所望圧力が得
られないおそれがあるからである。A vacuum suction device according to the present invention includes a vacuum suction portion provided with a large number of protrusions for supporting a portion other than the peripheral portion of the back surface of a sample, and surrounding the vacuum suction portion. In a vacuum suction device provided with a seal part that supports the peripheral edge of the sample, the surface roughness of the sample support part of the seal part is 1 to 20 μm in terms of the centerline average roughness Ra. This range is set so that if the center line average roughness Ra is less than 1 μm, the influence of dust bite may be exerted. On the other hand, if the center line average roughness Ra exceeds 20 μm, the leakage from the seal portion will occur. Is large, and the desired pressure may not be obtained.
【0008】この真空吸着器によれば、試料の周縁部が
面で支持されるので、突子による支持に比べて安定的に
支持できると共に、試料支持部分には微小な凹凸が形成
されているので、凹部によってダスト等が捕捉されやす
くなる。その結果、ダスト等に起因する平面度の低下を
防止することができる。さらには、試料支持部分の面粗
さを中心線粗さRaで1〜20μmとするには、試料支
持部分をガラスビーズ等でブラスト加工すれば済むの
で、簡単に、面加工をすることができる。また一方で、
中心線平均粗さRaで1〜20μmであるならば吸着作
用に影響を及ぼすこともない。According to this vacuum suction device, since the peripheral portion of the sample is supported by the surface, it can be supported more stably than the support by the protrusion, and minute unevenness is formed in the sample supporting portion. Therefore, the dust and the like are easily captured by the recess. As a result, it is possible to prevent a decrease in flatness due to dust or the like. Furthermore, in order to set the surface roughness of the sample supporting portion to the center line roughness Ra of 1 to 20 μm, the sample supporting portion can be blasted with glass beads or the like, and thus the surface processing can be easily performed. . On the other hand,
If the center line average roughness Ra is 1 to 20 μm, the adsorption action is not affected.
【0009】本発明に係る真空吸着器の製造方法は、試
料の裏面の周縁部以外の部分を支持する真空吸着部に多
数の突子を設け、前記真空吸着部を取り囲み前記試料の
周縁部を支持するシール部と前記多数の突子とをラップ
仕上げし、その後に、前記シール部の試料支持部分の面
粗さを中心線平均粗さRaで1〜20μmとする面粗さ
加工をするものである。この場合の「面粗さ加工」の方
法としてはブラスト加工、エッチング、粉体吹き付け又
は機械加工等が考えられる。In the method for manufacturing a vacuum suction device according to the present invention, a large number of protrusions are provided in a vacuum suction portion that supports a portion other than the peripheral portion of the back surface of the sample, and the vacuum suction portion is surrounded to surround the peripheral portion of the sample. Lapping is performed on the supporting seal portion and the large number of protrusions, and then surface roughness processing is performed to set the surface roughness of the sample supporting portion of the seal portion to a center line average roughness Ra of 1 to 20 μm. Is. In this case, blasting, etching, powder spraying, machining or the like can be considered as the method of "surface roughness processing".
【0010】この真空吸着器の製造方法によって得られ
た真空吸着器によれば、前記と同様の作用・効果が得ら
れる。According to the vacuum suction device obtained by this method for manufacturing a vacuum suction device, the same actions and effects as the above can be obtained.
【0011】[0011]
【発明の実施の形態】図1(a),(b)には実施形態
に係る真空吸着器が示されている。この真空吸着器10
0は特に限定はされないが全体がセラミックスによって
構成されている。この真空吸着器100は真空吸着部1
10とシール部120とを備えている。1A and 1B show a vacuum adsorber according to an embodiment. This vacuum adsorber 10
Although 0 is not particularly limited, the whole is made of ceramics. The vacuum suction device 100 includes a vacuum suction unit 1
10 and a seal portion 120.
【0012】真空吸着部110はほぼ環状のシール部1
20によって取り囲まれている。この真空吸着部110
はシール部120に対して凹んだ状態に形成されてい
る。この場合の真空吸着部110の深さは特に限定はさ
れないが50μm〜1mm程度である。この真空吸着部
110の底面には同一高さの多数の突子111が付設さ
れている。多数の突子111は試料(例えば半導体ウェ
ーハ)130の真空吸着の際に試料130の裏面を支持
する働きをする。また、真空吸着部110の底には真空
排気孔112が設けられており、この真空排気孔112
は真空ポンプ(図示せず)に接続されている。The vacuum suction part 110 is a substantially annular seal part 1.
It is surrounded by 20. This vacuum suction unit 110
Are formed to be recessed with respect to the seal portion 120. The depth of the vacuum suction unit 110 in this case is not particularly limited, but is about 50 μm to 1 mm. A large number of protrusions 111 having the same height are attached to the bottom surface of the vacuum suction unit 110. The large number of protrusions 111 serve to support the back surface of the sample 130 when the sample (for example, a semiconductor wafer) 130 is vacuum-sucked. A vacuum exhaust hole 112 is provided at the bottom of the vacuum suction unit 110.
Is connected to a vacuum pump (not shown).
【0013】一方、シール部120の上面は前記突子1
11の先端を連ねた面と面一となるように構成されてい
る。このシール部120は試料(例えば半導体ウェー
ハ)130の真空吸着の際に試料130の周縁部を支持
する働きをする。この場合のシール部120の試料13
0支持部分の面粗さは中心線平均粗さRaで1μm〜2
0μm、例えば5μmに設定されている。なお、シール
部120と試料130との当接幅は特に制限はされない
が1mm程度に設定してある。この当接幅を試料外周に
亘って同じとするために、シール部120は、吸着すべ
き試料130の外形形状に合致した形状となっており、
例えばオリエンテーションフラットの半導体ウェーハの
場合には一部が直線状の形状とされている。On the other hand, the upper surface of the seal portion 120 has the protrusion 1
It is configured so as to be flush with the surface where the tips of 11 are connected. The seal portion 120 functions to support the peripheral portion of the sample 130 when the sample (for example, a semiconductor wafer) 130 is vacuum-sucked. Sample 13 of seal part 120 in this case
0 The surface roughness of the supporting portion is 1 μm to 2 in terms of center line average roughness Ra.
It is set to 0 μm, for example, 5 μm. The contact width between the seal portion 120 and the sample 130 is not particularly limited, but is set to about 1 mm. In order to make this contact width the same over the outer circumference of the sample, the seal portion 120 has a shape that matches the outer shape of the sample 130 to be adsorbed,
For example, in the case of an orientation flat semiconductor wafer, a part thereof has a linear shape.
【0014】次に、この真空吸着器100の製造工程の
一例が図2に示されている。この製造工程を説明すれ
ば、まず、成形・焼成などの工程を経て得られた円板状
のセラミックスに機械加工等によって多数の突子111
を形成する。この場合の突子111はブラスト加工によ
っても形成できる。なお、真空排気孔112は焼成前に
形成しておく。次いで、突子111の先端部及びシール
部120をラップ仕上げして、多数の突子111の先端
を連ねた面とシール部120の上面とが面一となるよう
にする。次いで、ガラスビーズでのブラスト加工等によ
ってシール部120の上面を粗面とする。このときのシ
ール部120の上面の中心線平均粗さRaは1μm〜2
0μm、例えば5μmである。このようにして真空吸着
器100が製造される。Next, an example of the manufacturing process of the vacuum suction device 100 is shown in FIG. Explaining this manufacturing process, first, a large number of protrusions 111 are formed on a disk-shaped ceramic obtained through a process such as molding and firing by machining or the like.
To form. The protrusion 111 in this case can also be formed by blasting. The vacuum exhaust hole 112 is formed before firing. Next, the tip portion of the protrusion 111 and the seal portion 120 are lapped so that the surface connecting the tips of the many protrusions 111 and the upper surface of the seal portion 120 are flush with each other. Then, the upper surface of the seal portion 120 is roughened by blasting with glass beads or the like. At this time, the center line average roughness Ra of the upper surface of the seal portion 120 is 1 μm to 2 μm.
It is 0 μm, for example 5 μm. In this way, the vacuum suction device 100 is manufactured.
【0015】次いで、真空吸着器100の作用について
説明する。試料130の周縁部をシール部120に合致
させるようにして真空吸着部110の上に載置し、図示
しない真空ポンプによって真空吸着部110内を排気す
る。すると、真空吸着部110内が負圧となり試料13
0の裏面は大気圧によって多数の突子111に押しつけ
られ、試料130の裏面が多数の突子111によって支
持されると共に、試料130の周縁部裏面はシール部1
20に押しつけられる。この場合、シール部120にダ
スト等が存在すると、試料130の周縁部裏面がシール
部120に押しつけられる際に、ダスト等がシール部1
20の上面の凹部に押し込まれることになる。Next, the operation of the vacuum suction device 100 will be described. The sample 130 is placed on the vacuum suction unit 110 so that the peripheral portion of the sample 130 is aligned with the seal unit 120, and the inside of the vacuum suction unit 110 is evacuated by a vacuum pump (not shown). Then, the inside of the vacuum suction unit 110 becomes a negative pressure, and the sample 13
The back surface of 0 is pressed against many protrusions 111 by the atmospheric pressure, the back surface of the sample 130 is supported by the many protrusions 111, and the back surface of the peripheral portion of the sample 130 is the seal portion 1.
It is pressed against 20. In this case, if dust or the like exists in the seal portion 120, when the rear surface of the peripheral edge portion of the sample 130 is pressed against the seal portion 120, the dust or the like is generated.
It will be pushed into the concave portion of the upper surface of 20.
【0016】この真空吸着器100によれば次のような
効果が得られる。すなわち、試料130の周縁部が面で
支持されるので、突子による支持に比べて安定的に支持
できると共に、試料支持部分には微小な凹凸が形成され
ているので、凹部によってダスト等が捕捉されやすくな
る。その結果、ダスト等に起因する平面度の低下を防止
することができる。さらには、試料支持部分の面粗さを
中心線平均粗さRaで1〜20μmとするには、試料支
持部分をガラスビーズでブラスト加工等すれば済むの
で、簡単に、面加工をすることができ、吸着作用に影響
を及ぼすこともない。According to the vacuum suction device 100, the following effects can be obtained. That is, since the peripheral portion of the sample 130 is supported by the surface, it can be supported more stably than the support by the protrusion, and since minute irregularities are formed in the sample supporting portion, dust or the like is captured by the concave portion. It is easy to be done. As a result, it is possible to prevent a decrease in flatness due to dust or the like. Furthermore, in order to set the surface roughness of the sample supporting portion to 1 to 20 μm in terms of the center line average roughness Ra, it is sufficient to blast the sample supporting portion with glass beads or the like, so that the surface processing can be easily performed. It is possible and does not affect the adsorption action.
【0017】以上、本発明の実施形態について説明した
が、本発明は、かかる実施形態に限定されるものではな
く、その要旨を変更しない範囲で種々の変形が可能であ
ることはいうまでもない。Although the embodiments of the present invention have been described above, it is needless to say that the present invention is not limited to the embodiments and various modifications can be made without changing the gist thereof. .
【0018】例えば、前記実施形態では、面粗し加工手
段としてブラスト加工を使用したが、エッチング、粉体
吹き付け又は機械加工によって行ってもよい。For example, in the above embodiment, the blasting is used as the surface roughening means, but it may be performed by etching, powder spraying or machining.
【0019】[0019]
【発明の効果】本発明の代表的なものの効果を説明すれ
ば、試料の裏面の周縁部以外の部分を支持する多数の突
子が付設された真空吸着部と、前記真空吸着部を取り囲
んで設けられ前記試料の周縁部を支持するシール部とを
備える真空吸着器において、前記シール部の試料支持部
分の面粗さを中心線平均粗さRaで1〜20μmとした
ので、試料の周縁部を高精度な表面に矯正できると共
に、製造が容易で歩留りが良い真空吸着器が実現でき
る。The effects of the typical ones of the present invention will be described. A vacuum suction portion provided with a large number of protrusions for supporting a portion other than the peripheral portion of the back surface of the sample is surrounded by the vacuum suction portion. In a vacuum suction device provided with a seal part which supports the peripheral part of the sample, since the surface roughness of the sample supporting part of the seal part is 1 to 20 μm in terms of the center line average roughness Ra, the peripheral part of the sample Can be corrected to a highly accurate surface, and a vacuum suction device that is easy to manufacture and has a high yield can be realized.
【図1】実施形態に係る真空吸着器を示し、同図(a)
は平面図、同図(b)は縦断面図である。FIG. 1 shows a vacuum suction device according to an embodiment, and FIG.
Is a plan view, and FIG. 4B is a vertical sectional view.
【図2】図1の真空吸着器の製造工程を示す図である。FIG. 2 is a diagram showing a manufacturing process of the vacuum suction device of FIG.
【図3】従来の真空吸着器を示し、同図(a)は平面
図、同図(b)は縦断面図である。3A and 3B show a conventional vacuum suction device, in which FIG. 3A is a plan view and FIG. 3B is a vertical sectional view.
100 真空吸着器 110 真空吸着部 111 突子 112 真空排気孔 120 シール部 130 試料 100 vacuum suction device 110 Vacuum suction unit 111 Sprout 112 Vacuum exhaust hole 120 seal 130 samples
Claims (2)
る多数の突子が付設された真空吸着部と、前記真空吸着
部を取り囲んで設けられ前記試料の周縁部を支持するシ
ール部とを備える真空吸着器において、前記シール部の
試料支持部分の面粗さが中心線平均粗さRaで1〜20
μmであることを特徴とする真空吸着器。1. A vacuum suction part provided with a large number of protrusions for supporting a portion other than the peripheral edge portion of the back surface of the sample, and a seal portion surrounding the vacuum suction portion and supporting the peripheral edge portion of the sample. In the vacuum adsorber provided with, the surface roughness of the sample support portion of the seal portion is 1 to 20 in terms of centerline average roughness Ra.
Vacuum adsorber characterized by having a size of μm.
る真空吸着部に多数の突子を設け、前記真空吸着部を取
り囲み前記試料の周縁部を支持するシール部と前記多数
の突子とをラップ仕上げし、その後に、前記シール部の
試料支持部分の面粗さを中心線平均粗さRaで1〜20
μmとする面粗さ加工をすることを特徴とする真空吸着
器の製造方法。2. A large number of protrusions are provided on a vacuum suction portion that supports a portion other than the peripheral portion of the back surface of the sample, and a seal portion that surrounds the vacuum suction portion and supports the peripheral portion of the sample and the large number of protrusions. And lap, and then the surface roughness of the sample supporting portion of the seal portion is 1 to 20 as the center line average roughness Ra.
A method for manufacturing a vacuum suction device, which comprises subjecting a surface roughness to μm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2001342302A JP2003142566A (en) | 2001-11-07 | 2001-11-07 | Vacuum sucker and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001342302A JP2003142566A (en) | 2001-11-07 | 2001-11-07 | Vacuum sucker and its manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2003142566A true JP2003142566A (en) | 2003-05-16 |
Family
ID=19156186
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JP2001342302A Pending JP2003142566A (en) | 2001-11-07 | 2001-11-07 | Vacuum sucker and its manufacturing method |
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Cited By (4)
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---|---|---|---|---|
JP2006351949A (en) * | 2005-06-17 | 2006-12-28 | Tokyo Electron Ltd | Substrate mounting base, method for manufacturing the same and substrate processing apparatus |
JP2008042023A (en) * | 2006-08-08 | 2008-02-21 | Hitachi Kokusai Electric Inc | Substrate processing equipment |
JP2012009720A (en) * | 2010-06-28 | 2012-01-12 | Nikon Corp | Wafer holder and exposure equipment |
CN113104579A (en) * | 2021-02-26 | 2021-07-13 | 上海威克鲍尔通信科技有限公司 | Elasticity quick change suction nozzle mechanism for manipulator |
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JP2000286329A (en) * | 1999-03-31 | 2000-10-13 | Hoya Corp | Substrate-holding chuck, manufacture thereof, exposure method, manufacture of semiconductor device and aligner |
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JPS54120585A (en) * | 1978-01-23 | 1979-09-19 | Western Electric Co | Method of placing and smoothing substrate wafer having front and rear surfaces |
JPS63226939A (en) * | 1987-03-16 | 1988-09-21 | Hitachi Ltd | Wafer-holding system |
JPH03163848A (en) * | 1989-11-22 | 1991-07-15 | Hitachi Ltd | Vacuum suction base |
JPH04326508A (en) * | 1991-04-26 | 1992-11-16 | Hitachi Ltd | Vacuum suction fixing stand and aligner using the same |
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JP2000243817A (en) * | 1999-02-18 | 2000-09-08 | Sony Corp | Wafer stage, its manufacture, and wafer holding method |
JP2000286329A (en) * | 1999-03-31 | 2000-10-13 | Hoya Corp | Substrate-holding chuck, manufacture thereof, exposure method, manufacture of semiconductor device and aligner |
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JP2006351949A (en) * | 2005-06-17 | 2006-12-28 | Tokyo Electron Ltd | Substrate mounting base, method for manufacturing the same and substrate processing apparatus |
JP4657824B2 (en) * | 2005-06-17 | 2011-03-23 | 東京エレクトロン株式会社 | Substrate mounting table, substrate processing apparatus, and method for manufacturing substrate mounting table |
JP2008042023A (en) * | 2006-08-08 | 2008-02-21 | Hitachi Kokusai Electric Inc | Substrate processing equipment |
JP2012009720A (en) * | 2010-06-28 | 2012-01-12 | Nikon Corp | Wafer holder and exposure equipment |
CN113104579A (en) * | 2021-02-26 | 2021-07-13 | 上海威克鲍尔通信科技有限公司 | Elasticity quick change suction nozzle mechanism for manipulator |
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