JP3252074B2 - Vacuum suction device, sealing tool for vacuum suction device, and vacuum suction method - Google Patents
Vacuum suction device, sealing tool for vacuum suction device, and vacuum suction methodInfo
- Publication number
- JP3252074B2 JP3252074B2 JP4524095A JP4524095A JP3252074B2 JP 3252074 B2 JP3252074 B2 JP 3252074B2 JP 4524095 A JP4524095 A JP 4524095A JP 4524095 A JP4524095 A JP 4524095A JP 3252074 B2 JP3252074 B2 JP 3252074B2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum suction
- semiconductor wafer
- annular groove
- seal
- suction device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Jigs For Machine Tools (AREA)
- Gripping Jigs, Holding Jigs, And Positioning Jigs (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は半導体ウェハ等の試料
に研削、研磨、切断などの加工を行なう加工装置の試料
保持装置に関し、とくにその真空吸着装置、真空吸着装
置用シール具および真空吸着方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sample holding apparatus for a processing apparatus for performing processing such as grinding, polishing, and cutting on a sample such as a semiconductor wafer, and more particularly to a vacuum suction apparatus, a sealing tool for a vacuum suction apparatus, and a vacuum suction method. It is about.
【０００２】[0002]
【従来の技術】図９は従来の半導体ウェハ真空吸着装置
の一部を示す概略正断面図、図１０は図９に示した真空
吸着装置を示す概略平面図である。図に示すように、装
置本体１の上面に半導体ウェハ１５を吸着する円板状の
真空吸着部１７が設けられ、真空吸着部１７は数十〜５
０％の空孔を有する多孔質セラミックからなる。また、
真空吸着部１７に真空排気手段である連通孔３が接続さ
れ、真空吸着部１７の外側に平面状のシール部１８が設
けられ、シール部１８は緻密なセラミックからなる。2. Description of the Related Art FIG. 9 is a schematic front sectional view showing a part of a conventional semiconductor wafer vacuum suction apparatus, and FIG. 10 is a schematic plan view showing the vacuum suction apparatus shown in FIG. As shown in the figure, a disk-shaped vacuum suction part 17 for sucking the semiconductor wafer 15 is provided on the upper surface of the apparatus main body 1.
It consists of a porous ceramic with 0% porosity. Also,
The communication hole 3 serving as a vacuum exhaust unit is connected to the vacuum suction unit 17, and a flat seal portion 18 is provided outside the vacuum suction unit 17, and the seal portion 18 is made of dense ceramic.
【０００３】この半導体ウェハ真空吸着装置において
は、連通孔３と真空ポンプ（図示せず）とを接続し、半
導体ウェハ１５を装置本体１上に載置したのち、真空ポ
ンプを作動すると、半導体ウェハ１５の裏面は真空吸着
部１７の真空吸着面１７ａに押し付けられ、半導体ウェ
ハ１５は真空吸着面１７ａの高精度な平面に倣うから、
半導体ウェハ１５の反り、曲がりなどは矯正される。In this semiconductor wafer vacuum suction apparatus, the communication hole 3 is connected to a vacuum pump (not shown), and after the semiconductor wafer 15 is placed on the apparatus main body 1, the semiconductor wafer 15 is activated. 15 is pressed against the vacuum suction surface 17a of the vacuum suction unit 17, and the semiconductor wafer 15 follows the highly accurate flat surface of the vacuum suction surface 17a.
The warpage, bending, and the like of the semiconductor wafer 15 are corrected.
【０００４】図１１は従来の他の半導体ウェハ真空吸着
装置（実公昭６２−２８７５９号公報）を示す概略断面
図である。図に示すように、装置本体１の上面に多数の
微小突起２が設けられ、微小突起２の上面は高精度な平
面に加工されている。また、微小突起２の底部と装置本
体１の側面とを連通する連通孔３が設けられ、装置本体
１の連通孔３部に接続具４が取り付けられ、連通孔３、
接続具４によって真空排気手段が構成されている。ま
た、微小突起２の周囲に円環状溝５が設けられ、円環状
溝５内にリング６が取り付けられ、リング６の上部に円
環状の膜シール７の内周部が取り付けられている。FIG. 11 is a schematic sectional view showing another conventional semiconductor wafer vacuum suction apparatus (Japanese Utility Model Publication No. 62-28759). As shown in the figure, a large number of minute projections 2 are provided on the upper surface of the apparatus main body 1, and the upper surface of the minute projections 2 is processed into a highly accurate flat surface. In addition, a communication hole 3 for communicating the bottom of the minute projection 2 with the side surface of the device body 1 is provided, and a connector 4 is attached to the communication hole 3 of the device body 1.
The connecting device 4 constitutes a vacuum exhaust unit. An annular groove 5 is provided around the microprojection 2, a ring 6 is mounted in the annular groove 5, and an inner peripheral portion of an annular membrane seal 7 is mounted on the ring 6.
【０００５】この半導体ウェハ真空吸着装置において
は、接続具４を介して連通孔３と真空ポンプ（図示せ
ず）とを接続し、半導体ウェハ（図示せず）を装置本体
１上に載置したのち、真空ポンプを作動すると、大気が
半導体ウェハの裏面と膜シール７との間隙を流れるか
ら、この間隙の圧力が減少し、膜シール７が大気圧によ
って下方から押されて弾性変形し、膜シール７が半導体
ウェハの裏面の周辺部に密着する。このため、膜シール
７の内側は真空となり、半導体ウェハは微小突起２部に
強力に押し付けられ、半導体ウェハは微小突起２部の高
精度な平面に倣うから、半導体ウェハの反り、曲がりな
どは矯正される。In this semiconductor wafer vacuum suction apparatus, the communication hole 3 and a vacuum pump (not shown) are connected via a connector 4, and a semiconductor wafer (not shown) is placed on the apparatus body 1. Thereafter, when the vacuum pump is operated, the atmosphere flows through the gap between the back surface of the semiconductor wafer and the membrane seal 7, so that the pressure in this gap is reduced, and the membrane seal 7 is pushed from below by the atmospheric pressure and elastically deforms. The seal 7 is in close contact with the periphery of the back surface of the semiconductor wafer. For this reason, the inside of the film seal 7 is evacuated, and the semiconductor wafer is strongly pressed against the minute projections 2, and the semiconductor wafer follows the highly accurate flat surface of the minute projections 2. Is done.
【０００６】[0006]
【発明が解決しようとする課題】しかし、図９、図１０
に示した半導体ウェハ真空吸着装置においては、半導体
ウェハ１５の表面あらさ、凹凸によりシール部１８は完
全に真空漏れを防止することができないから、半導体ウ
ェハ１５を真空吸着して加工するときに、研磨液、ポリ
シ液等の加工液が真空吸着面１７ａと半導体ウェハ１５
の裏面との間に流入し、真空吸着面１７ａと半導体ウェ
ハ１５の裏面を汚すことになる。したがって、半導体ウ
ェハ１５の加工後に必ず真空吸着面１７ａと半導体ウェ
ハ１５の裏面を洗浄しなければならず、洗浄が不十分な
場合には加工液が真空吸着面１７ａに残るから、真空吸
着面１７ａの平面度が劣化し、また次に吸着した半導体
ウェハ１５の裏面に加工液が付着する。However, FIG. 9 and FIG.
In the semiconductor wafer vacuum suction apparatus shown in (1), the sealing portion 18 cannot completely prevent the vacuum leakage due to the surface roughness and unevenness of the semiconductor wafer 15. A processing liquid such as a liquid or a policy liquid is applied to the vacuum suction surface 17 a and the semiconductor wafer 15.
, And contaminates the vacuum suction surface 17 a and the back surface of the semiconductor wafer 15. Therefore, the vacuum suction surface 17a and the back surface of the semiconductor wafer 15 must be cleaned after processing the semiconductor wafer 15, and if the cleaning is insufficient, the working liquid remains on the vacuum suction surface 17a. And the processing liquid adheres to the back surface of the semiconductor wafer 15 that has been adsorbed next.
【０００７】また、図１１に示した半導体ウェハ真空吸
着装置においては、例えばダイシングソーによる機械加
工を行なったときに、加工クズ等によって膜シール７が
損傷し、吸着能力が低下することがあるが、この場合に
は膜シール７の交換が面倒であるから、メンテナンス性
が良好ではなく、半導体ウェハの吸着作業を能率良く行
なうことができない。また、膜シール７の可撓範囲限界
近くまで半導体ウェハが変形した場合には、膜シール７
を半導体ウェハの裏面の周辺部に密着させることができ
ないから、膜シール７の内側を真空とすることができ
ず、確実に半導体ウェハを吸着することができない。Further, in the semiconductor wafer vacuum suction apparatus shown in FIG. 11, when machining is performed by, for example, a dicing saw, the film seal 7 may be damaged by processing scraps and the like, and the suction capacity may be reduced. In this case, since the replacement of the film seal 7 is troublesome, the maintenance property is not good, and the work of sucking the semiconductor wafer cannot be performed efficiently. When the semiconductor wafer is deformed to near the limit of the flexibility of the film seal 7, the film seal 7
Cannot be brought into close contact with the peripheral portion of the back surface of the semiconductor wafer, so that the inside of the film seal 7 cannot be evacuated and the semiconductor wafer cannot be reliably attracted.
【０００８】この発明は上述の課題を解決するためにな
されたもので、メンテナンス性が良好な真空吸着装置、
真空吸着方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and has a vacuum suction device having good maintainability .
It is an object to provide a vacuum suction method.
【０００９】また、この発明は確実に試料を吸着するこ
とができる真空吸着装置、真空吸着装置用シール具を提
供することを目的とする。Another object of the present invention is to provide a vacuum suction device and a seal for the vacuum suction device, which can reliably suck a sample.
【００１０】また、この発明は試料の吸着作業を能率良
く行なうことができる真空吸着装置用シール具を提供す
ることを目的とする。It is another object of the present invention to provide a sealing device for a vacuum suction device capable of efficiently performing a sample suction operation.
【００１１】[0011]
【課題を解決するための手段】この目的を達成するた
め、この発明に係る真空吸着装置においては、装置本体
の上面に多数の微小突起を設け、上記微小突起の底部を
真空排気手段と接続し、上記微小突起の周囲に環状溝を
設け、上記環状溝内に環状のシール具本体および上記シ
ール具本体の両側面に内周部が取り付けられた環状の膜
シールからなるシール具を挿入する。In order to achieve this object, in a vacuum suction apparatus according to the present invention, a large number of minute projections are provided on the upper surface of an apparatus body , and the bottom of the minute projections is evacuated. A seal member comprising an annular seal body provided in an annular groove around the microprojection, an annular seal body in the annular groove, and an inner peripheral portion attached to both sides of the seal body. Insert
【００１２】この場合、上記環状溝内に陽圧を付与する
陽圧付与手段を設ける。In this case, a positive pressure applying means for applying a positive pressure is provided in the annular groove.
【００１３】また、上記環状溝の下方に磁石を設け、上
記シール具本体の材質を磁性体とする。Further, a magnet is provided below the annular groove, and the material of the sealing member body is a magnetic material.
【００１４】また、真空吸着装置の環状溝内に挿入して
用いる真空吸着装置用シール具において、環状のシール
本体の両側面に環状の膜シールの内周部を取り付ける。Further, in a vacuum suction device sealing tool used by being inserted into an annular groove of a vacuum suction device, inner peripheral portions of an annular film seal are attached to both side surfaces of an annular seal body.
【００１５】この場合、上記シール具本体として、磁性
体からなるものを用いる。In this case, a body made of a magnetic material is used as the sealing tool body.
【００１６】また、上記膜シールとして、高分子材料か
らなるものを用いる。Further, a material made of a polymer material is used as the film seal.
【００１７】また、装置本体の上面に設けられた多数の
微小突起の底部を排気して試料を吸着する真空吸着方法
において、上記微小突起の周囲に設けられた環状溝内に
環状のシール具本体および上記シール具本体の両側面に
内周部が取り付けられた環状の膜シールからなるシール
具を挿入し、上記膜シールを上記試料の裏面に密着させ
る。Further, in the vacuum suction method of evacuating the bottoms of a large number of micro projections provided on the upper surface of the apparatus main body and adsorbing a sample, an annular sealing body is provided in an annular groove provided around the micro projections. Then, a sealing member made of an annular membrane seal having inner peripheral portions attached to both side surfaces of the sealing member body is inserted, and the membrane seal is brought into close contact with the back surface of the sample.
【００１８】[0018]
【作用】真空吸着装置 、真空吸着方法においては、加工
クズ等によって膜シールが損傷したとしても、シール具
を容易に交換することができる。 In the vacuum suction device and the vacuum suction method, even if the film seal is damaged by processing dust or the like, the seal tool can be easily replaced.
【００１９】また、環状溝内に陽圧を付与する陽圧付与
手段を設けたときには、膜シールの可撓範囲限界近くま
で試料の周辺部が大きく変形したとしても、膜シールを
試料の裏面に密着させることができるとともに、環状溝
内に異物が侵入するのを防止することができる。Further, when a positive pressure applying means for applying a positive pressure in the annular groove is provided, even if the peripheral portion of the sample is greatly deformed to near the flexible range limit of the membrane seal, the membrane seal is applied to the back surface of the sample. In addition to the close contact, foreign matter can be prevented from entering the annular groove.
【００２０】また、環状溝の下方に磁石を設け、シール
具本体の材質を磁性体としたときには、膜シールを環状
溝の底面に当接することができる。Further, when a magnet is provided below the annular groove and the main body of the sealing member is made of a magnetic material, the membrane seal can be in contact with the bottom surface of the annular groove.
【００２１】また、真空吸着装置用シール具において
は、容易に交換することができる。Further, the sealing device for a vacuum suction device can be easily replaced.
【００２２】また、シール具本体として、磁性体からな
るものを用いたときには、環状溝の下方に磁石を設けれ
ば、膜シールを環状溝の底面に当接することができる。When a magnetic body is used as the sealing member main body, if a magnet is provided below the annular groove, the membrane seal can contact the bottom surface of the annular groove.
【００２３】また、膜シールとして、高分子材料からな
るものを用いたときには、膜シールを試料の裏面により
有効に密着させることができる。When a material made of a polymer material is used as the film seal, the film seal can be more effectively adhered to the back surface of the sample.
【００２４】[0024]
【実施例】図１は参考例の半導体ウェハ真空吸着装置の
一部を示す概略正断面図、図２は図１に示した半導体ウ
ェハ真空吸着装置を示す概略平面図である。図に示すよ
うに、真空吸着部１７の外側に平面状の第１のシール部
１８ａが配設され、シール部１８ａの外側に円環状溝５
が配設され、円環状溝５の外側に第２のシール部１８ｂ
が配設され、円環状溝５内に陽圧付与手段である連通孔
１３が接続されている。FIG. 1 is a schematic front sectional view showing a part of a semiconductor wafer vacuum suction apparatus according to a reference example , and FIG. 2 is a schematic plan view showing the semiconductor wafer vacuum suction apparatus shown in FIG. As shown in the drawing, a planar first seal portion 18a is provided outside the vacuum suction portion 17, and the annular groove 5 is provided outside the seal portion 18a.
Is provided, and a second seal portion 18 b is provided outside the annular groove 5.
And a communication hole 13 as a positive pressure applying means is connected in the annular groove 5.
【００２５】この半導体ウェハ真空吸着装置において
は、連通孔１３に陽圧空気供給手段（図示せず）を接続
すれば、円環状溝５から陽圧空気が吹き出し、陽圧空気
がシール部１８ａと半導体ウェハ１５の裏面との間を通
って大気中に放出されるから、加工液が真空吸着面１７
ａと半導体ウェハ１５の裏面との間に流入することがな
い。このため、半導体ウェハ１５の加工後に真空吸着面
１７ａと半導体ウェハ１５の裏面を洗浄する必要がな
く、また加工液によって真空吸着面１７ａの平面度が劣
化することがなく、また次に吸着した半導体ウェハ１５
の裏面に加工液が付着することがない。また、真空吸着
部１７は多孔質セラミックからなるから、半導体ウェハ
１５との接触面積が大きいので、加工圧力が高く、半導
体ウェハ１５の厚さが薄い場合にも、半導体ウェハ１５
を変形なく支持することができるため、半導体ウェハ１
５の加工面を凹凸なく加工することができる。In this semiconductor wafer vacuum suction apparatus, if a positive pressure air supply means (not shown) is connected to the communication hole 13, the positive pressure air blows out from the annular groove 5 and the positive pressure air is connected to the seal portion 18a. Since the processing liquid is released into the atmosphere through the space between the back surface of the semiconductor wafer 15 and the vacuum suction surface 17.
a and does not flow between the back surface of the semiconductor wafer 15. Therefore, it is not necessary to clean the vacuum suction surface 17a and the back surface of the semiconductor wafer 15 after the processing of the semiconductor wafer 15, the flatness of the vacuum suction surface 17a is not degraded by the processing liquid, and Wafer 15
The working liquid does not adhere to the back surface of the substrate. Further, since the vacuum suction portion 17 is made of porous ceramic, the contact area with the semiconductor wafer 15 is large, so that the processing pressure is high and the semiconductor wafer 15 is thin even when the thickness of the semiconductor wafer 15 is small.
Can be supported without deformation.
The processing surface of No. 5 can be processed without unevenness.
【００２６】図３は参考例の他の半導体ウェハ真空吸着
装置の真空吸着部を示す図である。図に示すように、真
空吸着部に円環状溝１９が設けられ、円環状溝１９に連
通孔３が開口している。FIG. 3 is a view showing a vacuum suction portion of another semiconductor wafer vacuum suction device of the reference example . As shown in the figure, an annular groove 19 is provided in the vacuum suction portion, and the communication hole 3 is opened in the annular groove 19.
【００２７】図４は参考例の他の半導体ウェハ真空吸着
装置の真空吸着部を示す図である。図に示すように、真
空吸着部に多数の微小孔２０が設けられ、微小孔２０が
連通孔３に連通している。FIG. 4 is a view showing a vacuum suction portion of another semiconductor wafer vacuum suction device of the reference example . As shown in the figure, a large number of micro holes 20 are provided in the vacuum suction section, and the micro holes 20 communicate with the communication holes 3.
【００２８】図５は参考例の他の半導体ウェハ真空吸着
装置の真空吸着部を示す図である。図に示すように、真
空吸着部に多数のピン状の微小突起２が設けられ、微小
突起２が設けられた部分の底部に連通孔３が開口してい
る。FIG. 5 is a view showing a vacuum suction portion of another semiconductor wafer vacuum suction device of the reference example . As shown in the figure, a large number of pin-shaped minute projections 2 are provided on the vacuum suction portion, and a communication hole 3 is opened at the bottom of the portion where the minute projections 2 are provided.
【００２９】この半導体ウェハ真空吸着装置において
は、真空吸着部と半導体ウェハ１５の裏面との接触面積
が小さいから、ダスト等の影響を受けにくく、また矯正
時の変面度劣化が極めて少ない。In this semiconductor wafer vacuum suction apparatus, since the contact area between the vacuum suction portion and the back surface of the semiconductor wafer 15 is small, it is hardly affected by dust and the like, and the degree of deformation at the time of straightening is extremely small.
【００３０】図６はこの発明に係る半導体ウェハ真空吸
着装置、半導体ウェハ真空吸着装置用シール具を示す概
略断面図である。図に示すように、円環状溝５内に半導
体ウェハ真空吸着装置用シール具８が挿入され、シール
具８は磁性体からなる環状のシール具本体９およびシー
ル具本体９の両側面に取り付けられかつ高分子材料から
なる膜シール１０、１１で構成されている。また、円環
状溝５と装置本体１の側面とを連通する連通孔１３が設
けられ、装置本体１の連通孔１３部に接続具１４が取り
付けられ、連通孔１３、接続具１４によって円環状溝５
内に陽圧を付与する陽圧付与手段が構成されている。ま
た、円環状溝５の下方に複数の柱状磁石１２が設けられ
ている。FIG. 6 shows the vacuum suction of a semiconductor wafer according to the present invention.
Chakusochi is a schematic sectional view showing a semiconductor wafer vacuum suction device for seal fitting. As shown in the figure, a semiconductor wafer vacuum suction device sealing tool 8 is inserted into the annular groove 5, and the sealing tool 8 is attached to both sides of the annular sealing tool body 9 made of a magnetic material and the sealing tool body 9. Further, it is composed of membrane seals 10 and 11 made of a polymer material. In addition, a communication hole 13 that communicates the annular groove 5 with a side surface of the apparatus main body 1 is provided, and a connecting tool 14 is attached to the communication hole 13 of the apparatus main body 1. 5
Positive pressure applying means for applying a positive pressure therein is configured. Further, a plurality of columnar magnets 12 are provided below the annular groove 5.
【００３１】つぎに、この発明に係る半導体ウェハ真空
吸着方法、図６に示した半導体ウェハ真空吸着装置、半
導体ウェハ真空吸着装置用シール具の動作について説明
する。まず、接続具４を介して連通孔３と真空ポンプと
を接続し、図７に示すように、半導体ウェハ１５を装置
本体１上に載置したのち、真空ポンプを作動すると、大
気が半導体ウェハ１５の裏面と膜シール１０との間隙、
膜シール１１と円環状溝５の底面との間隙を流れるか
ら、これらの間隙の圧力が減少し、膜シール１０、１１
が大気圧によって押されて弾性変形し、膜シール１０が
半導体ウェハ１５の裏面の周辺部に密着し、膜シール１
１が円環状溝５の底面に密着する。このため、膜シール
１０、１１の内側は真空となり、半導体ウェハ１５は微
小突起２部に強力に押し付けられ、半導体ウェハ１５は
微小突起２部の高精度な平面に倣うから、半導体ウェハ
１５の反り、曲がりなどは矯正される。Next, the operation of the semiconductor wafer vacuum suction method according to the present invention, the operation of the semiconductor wafer vacuum suction device shown in FIG. 6, and the sealing tool for the semiconductor wafer vacuum suction device will be described. First, the communication hole 3 and the vacuum pump are connected via the connecting tool 4, and as shown in FIG. 7, the semiconductor wafer 15 is placed on the apparatus main body 1, and then the vacuum pump is operated. 15, a gap between the back surface and the membrane seal 10,
Since the gas flows through the gaps between the membrane seal 11 and the bottom surface of the annular groove 5, the pressure in these gaps decreases, and the membrane seals 10, 11
Is elastically deformed by being pressed by the atmospheric pressure, and the film seal 10 comes into close contact with the peripheral portion of the back surface of the semiconductor wafer 15 and the film seal 1
1 closely adheres to the bottom surface of the annular groove 5. For this reason, the inside of the film seals 10 and 11 is evacuated, and the semiconductor wafer 15 is strongly pressed against the minute projections 2, and the semiconductor wafer 15 follows a highly accurate plane of the minute projections 2. , Bends, etc. are corrected.
【００３２】このような半導体ウェハ真空吸着装置、半
導体ウェハ真空吸着方法においては、加工クズ等によっ
て膜シール１０、１１が損傷したとしても、シール具８
を容易に交換することができるから、メンテナンス性が
良好である。また、円環状溝５内に陽圧を付与する陽圧
付与手段が設けられているから、図７に示すように、膜
シール１０の可撓範囲限界近くまで半導体ウェハ１５の
周辺部が大きく変形したとしても、膜シール１０を半導
体ウェハ１５の裏面に密着させることができ、また膜シ
ール１１を円環状溝５の底面に密着させることができる
から、確実に半導体ウェハ１５を吸着することができる
とともに、例えばダイシングソーによる機械加工を行な
ったときにも、円環状溝５内に加工クズ、切削油、切削
水等の異物が侵入するのを防止することができるから、
膜シール１０、１１が損傷するのを防止することができ
る。また、柱状磁石１２によってシール具本体９が吸引
されるから、シール具８の加工精度が低くとも、膜シー
ル１１を円環状溝５の底面に当接することができるの
で、確実に半導体ウェハ１５を吸着することができる。
また、シール具８においては、容易に交換することがで
きるから、半導体ウェハ１５の吸着作業を能率良く行な
うことができる。また、膜シール１０、１１として高分
子材料からなるものを用いているから、膜シール１０、
１１を半導体ウェハ１５の裏面の周辺部、円環状溝５の
底面により有効に密着させることができるので、確実に
半導体ウェハ１５を吸着することができる。In such a semiconductor wafer vacuum suction apparatus and semiconductor wafer vacuum suction method, even if the film seals 10 and 11 are damaged by processing scraps or the like, the sealing tool 8 can be used.
Can be easily replaced, so that maintenance is excellent. Further, since the positive pressure applying means for applying the positive pressure is provided in the annular groove 5, the peripheral portion of the semiconductor wafer 15 is greatly deformed to near the limit of the flexible range of the film seal 10 as shown in FIG. Even if it does, the film seal 10 can be brought into close contact with the back surface of the semiconductor wafer 15, and the film seal 11 can be brought into close contact with the bottom surface of the annular groove 5, so that the semiconductor wafer 15 can be surely sucked. At the same time, even when performing machining with a dicing saw, for example, it is possible to prevent foreign substances such as processing waste, cutting oil, and cutting water from entering the annular groove 5,
Damage to the membrane seals 10, 11 can be prevented. Further, since the sealing tool main body 9 is attracted by the columnar magnet 12, even if the processing accuracy of the sealing tool 8 is low, the film seal 11 can be brought into contact with the bottom surface of the annular groove 5, so that the semiconductor wafer 15 can be securely mounted. Can be adsorbed.
Further, since the sealing tool 8 can be easily replaced, the work of sucking the semiconductor wafer 15 can be performed efficiently. Further, since a material made of a polymer material is used as the membrane seals 10 and 11,
11 can be more effectively brought into close contact with the peripheral portion of the back surface of the semiconductor wafer 15 and the bottom surface of the annular groove 5, so that the semiconductor wafer 15 can be reliably sucked.
【００３３】ここで、直径が１３０ｍｍのステンレス円
板からなる装置本体１を用い、微小突起２の上面の平面
度を０．３μｍ以下に加工し、微小突起２を直径が約９
０ｍｍの円状範囲内に設け、微小突起２の上面の面積の
合計を上記円状範囲の面積の１０％とし、着磁ステンレ
スからなるシール具本体８の両面に膜厚が１０μｍの膜
シール１０、１１を接着により取り付け、厚さが５００
μｍ、直径が４インチ（約１０１．６ｍｍ）で、上下面
が平行度１μｍ以内に鏡面研磨された標準半導体ウェハ
を微小突起２上に載置し、微小突起２の底部を５ｍｍＨ
ｇまで減圧して標準半導体ウェハを吸着し、標準半導体
ウェハの表面をレーザ干渉計で形状測定した結果、面精
度が１．５μｍ以内で平面状に吸着されていることを確
認した。Here, the flatness of the upper surface of the minute projection 2 is machined to 0.3 μm or less by using the apparatus main body 1 made of a stainless steel disk having a diameter of 130 mm, and the minute projection 2 is formed to have a diameter of about 9 mm.
0 mm, the total area of the upper surfaces of the microprojections 2 is 10% of the area of the circular area, and the film seal 10 having a thickness of 10 μm is formed on both surfaces of the sealing member body 8 made of magnetized stainless steel. , 11 are attached by gluing and the thickness is 500
A standard semiconductor wafer having a diameter of 4 μm and a diameter of 4 inches (approximately 101.6 mm), and whose upper and lower surfaces are mirror-polished within a parallelism of 1 μm, is placed on the micro projections 2, and the bottom of the micro projections 2
The pressure was reduced to g, and the standard semiconductor wafer was adsorbed. The surface of the standard semiconductor wafer was measured for its shape with a laser interferometer. As a result, it was confirmed that the standard semiconductor wafer was adsorbed in a planar shape with a surface accuracy within 1.5 μm.
【００３４】また、標準半導体ウェハの上下面に径が
０．５μｍのアルミナビーズ入りの研磨液を滴下したの
ちに、同じ条件で標準半導体ウェハを吸着したところ、
標準半導体ウェハの表面の面精度は±３μｍに低下し
た。つぎに、吸着を停止し、標準半導体ウェハの位置を
ずらして再び吸着して面精度を測定したところ、標準半
導体ウェハの表面の面精度は１．５μｍ以内に回復し
た。After a polishing liquid containing alumina beads having a diameter of 0.5 μm was dropped on the upper and lower surfaces of the standard semiconductor wafer, the standard semiconductor wafer was adsorbed under the same conditions.
The surface accuracy of the surface of the standard semiconductor wafer was reduced to ± 3 μm. Next, the suction was stopped, the position of the standard semiconductor wafer was shifted, the suction was performed again, and the surface accuracy was measured. As a result, the surface accuracy of the surface of the standard semiconductor wafer was recovered to within 1.5 μm.
【００３５】また、厚さが１．５ｍｍで裏面が凸であ
り、反り量２００μｍの機械加工用半導体ウェハを従来
の半導体ウェハ真空吸着装置で吸着したところ、吸着す
ることができなかったが、図６に示した半導体ウェハ真
空吸着装置で吸着したところ、吸着することができ、機
械加工用半導体ウェハの表面の面精度は１．８μｍ以内
であった。さらに、反り量が４００μｍの機械加工用半
導体ウェハを図６に示した半導体ウェハ真空吸着装置で
円環状溝５内を陽圧にしないで吸着したが、膜シール１
０の周辺から空気がリークして、吸着が不可能であっ
た。しかし、円環状溝５内に圧力が０．５ｋｇ／ｃｍ２
の圧縮空気を供給したところ、機械加工用半導体ウェハ
を吸着することができた。When a conventional semiconductor wafer vacuum suction apparatus was used to suction a semiconductor wafer for machining having a thickness of 1.5 mm, a rear surface convex, and a warpage of 200 μm using a conventional semiconductor wafer vacuum suction apparatus, no suction was possible. When the semiconductor wafer was sucked by the semiconductor wafer vacuum suction device shown in No. 6, the wafer could be sucked, and the surface accuracy of the surface of the semiconductor wafer for machining was within 1.8 μm. Further, a semiconductor wafer for machining having a warpage of 400 μm was sucked by the semiconductor wafer vacuum suction apparatus shown in FIG. 6 without applying a positive pressure to the annular groove 5.
Air leaked from around 0, making adsorption impossible. However, the pressure in the annular groove 5 is 0.5 kg / cm 2
When compressed air was supplied, the semiconductor wafer for machining could be adsorbed.
【００３６】つぎに、この状態でダイシングソーで切削
水を半導体ウェハの表面に吹き付けながら切削加工を行
なったところ、切削終了後に円環状溝５の内部に切削水
は殆ど観察されなかった。Next, in this state, when cutting was performed while spraying cutting water with a dicing saw on the surface of the semiconductor wafer, almost no cutting water was observed inside the annular groove 5 after cutting was completed.
【００３７】図８はこの発明に係る他の半導体ウェハ真
空吸着装置を示す概略断面図である。図に示すように、
円環状溝５の下方にリング状磁石１６が埋め込まれれて
いる。FIG. 8 is a schematic sectional view showing another semiconductor wafer vacuum suction apparatus according to the present invention. As shown in the figure,
A ring-shaped magnet 16 is buried below the annular groove 5.
【００３８】この半導体ウェハ真空吸着装置において
も、リング状磁石１６によってシール具本体９が吸引さ
れるから、シール具８の加工精度が低くとも、膜シール
１１を円環状溝５の底面に当接することができるので、
確実に半導体ウェハ１５を吸着することができる。Also in this semiconductor wafer vacuum suction apparatus, since the sealing tool body 9 is sucked by the ring-shaped magnet 16, the film seal 11 abuts against the bottom surface of the annular groove 5 even if the processing accuracy of the sealing tool 8 is low. So you can
The semiconductor wafer 15 can be reliably sucked.
【００３９】なお、上述実施例においては、試料が半導
体ウェハ１５の場合について説明したが、試料が半導体
ウェハ１５以外の場合にもこの発明を適用することがで
きる。また、上述実施例においては、円環状溝５を設け
たが、他の環状溝を設けてもよい。また、上述実施例に
おいては、装置本体１の円環状溝５の外側の上面を平面
としたが、この面に微小突起を設けてもよい。Although the above embodiment has been described with reference to the case where the sample is the semiconductor wafer 15, the present invention can be applied to a case where the sample is other than the semiconductor wafer 15. Further, in the above embodiment, the annular groove 5 is provided, but another annular groove may be provided. In the above-described embodiment , the upper surface outside the annular groove 5 of the apparatus main body 1 is a flat surface, but a minute projection may be provided on this surface.
【００４０】[0040]
【発明の効果】以上説明したように、この発明に係る真
空吸着装置、真空吸着方法においては、加工クズ等によ
って膜シールが損傷したとしても、シール具を容易に交
換することができるから、メンテナンス性が良好であ
る。As described above, according to the present invention,
In the vacuum suction device and the vacuum suction method, even if the film seal is damaged by processing scraps or the like, the seal device can be easily replaced, so that the maintainability is good.
【００４１】また、環状溝内に陽圧を付与する陽圧付与
手段を設けたときには、膜シールの可撓範囲限界近くま
で試料の周辺部が大きく変形したとしても、膜シールを
試料の裏面に密着させることができるから、確実に試料
を吸着することができるとともに、環状溝内に異物が侵
入するのを防止することができるから、膜シールが損傷
するのを防止することができる。When a positive pressure applying means for applying a positive pressure in the annular groove is provided, even if the peripheral portion of the sample is greatly deformed to near the limit of the flexibility of the membrane seal, the membrane seal is applied to the back surface of the sample. Since the sample can be brought into close contact, the sample can be surely adsorbed, and the intrusion of foreign matter into the annular groove can be prevented, so that the membrane seal can be prevented from being damaged.
【００４２】また、環状溝の下方に磁石を設け、シール
具本体の材質を磁性体としたときには、膜シールを環状
溝の底面に当接することができるから、確実に試料を吸
着することができる。Further, when a magnet is provided below the annular groove and the material of the sealing member body is made of a magnetic material, the sample can be reliably adsorbed because the membrane seal can be in contact with the bottom surface of the annular groove. .
【００４３】また、真空吸着装置用シール具において
は、容易に交換することができるから、試料の吸着作業
を能率良く行なうことができる。In addition, since the vacuum suction device sealing device can be easily replaced, the sample suction operation can be performed efficiently.
【００４４】また、シール具本体として、磁性体からな
るものを用いたときには、環状溝の下方に磁石を設けれ
ば、膜シールを環状溝の底面に当接することができるか
ら、確実に試料を吸着することができる。When a magnetic body is used as the sealing member main body, if a magnet is provided below the annular groove, the membrane seal can be brought into contact with the bottom surface of the annular groove. Can be adsorbed.
【００４５】また、膜シールとして、高分子材料からな
るものを用いたときには、膜シールを試料の裏面により
有効に密着させることができるから、確実に試料を吸着
することができる。When a material made of a polymer material is used as the film seal, the sample can be reliably adsorbed because the film seal can be more effectively brought into close contact with the back surface of the sample.
【図１】参考例の半導体ウェハ真空吸着装置の一部を示
す概略断面図である。FIG. 1 is a schematic sectional view showing a part of a semiconductor wafer vacuum suction device of a reference example .
【図２】図１に示した半導体ウェハ真空吸着装置を示す
概略平面図である。FIG. 2 is a schematic plan view showing the semiconductor wafer vacuum suction device shown in FIG.
【図３】参考例の他の半導体ウェハ真空吸着装置の真空
吸着部を示す図である。FIG. 3 is a diagram showing a vacuum suction unit of another semiconductor wafer vacuum suction device of the reference example .
【図４】参考例の他の半導体ウェハ真空吸着装置の真空
吸着部を示す図である。FIG. 4 is a diagram showing a vacuum suction unit of another semiconductor wafer vacuum suction device of the reference example .
【図５】参考例の他の半導体ウェハ真空吸着装置の真空
吸着部を示す図である。FIG. 5 is a view showing a vacuum suction unit of another semiconductor wafer vacuum suction device of the reference example .
【図６】この発明に係る半導体ウェハ真空吸着装置、半
導体ウェハ真空吸着装置用シール具を示す概略断面図で
ある。FIG. 6 is a schematic sectional view showing a semiconductor wafer vacuum suction device and a sealing tool for the semiconductor wafer vacuum suction device according to the present invention.
【図７】この発明に係る半導体ウェハ真空吸着方法、図
６に示した半導体ウェハ真空吸着装置、半導体ウェハ真
空吸着装置用シール具の動作の説明図である。FIG. 7 is a diagram showing a method for vacuum suction of a semiconductor wafer according to the present invention;
Semiconductor wafer vacuum suction device shown in 6 is an explanatory view of the operation of the semiconductor wafer vacuum suction device for seal fitting.
【図８】この発明に係る他の半導体ウェハ真空吸着装置
を示す概略断面図である。FIG. 8 is a schematic sectional view showing another semiconductor wafer vacuum suction device according to the present invention.
【図９】従来の半導体ウェハ真空吸着装置の一部を示す
概略断面図である。FIG. 9 is a schematic sectional view showing a part of a conventional semiconductor wafer vacuum suction apparatus.
【図１０】図９に示した半導体ウェハ真空吸着装置を示
す概略平面図である。10 is a schematic plan view showing the semiconductor wafer vacuum suction device shown in FIG.
【図１１】従来の他の半導体ウェハ真空吸着装置を示す
概略断面図である。FIG. 11 is a schematic sectional view showing another conventional semiconductor wafer vacuum suction apparatus.
１…装置本体 ２…微小突起 ３…連通孔 ４…接続具 ５…円環状溝 ８…シール具 ９…シール具本体 １０…膜シール １１…膜シール １２…柱状磁石 １３…連通孔 １４…接続具 １６…リング状磁石 １７…真空吸着部 １８ａ…第１のシール部 １８ｂ…第２のシール部 １９…円環状溝 ２０…微小孔 DESCRIPTION OF SYMBOLS 1 ... Device main body 2 ... Micro projections 3 ... Communication hole 4 ... Connection tool 5 ... Annular groove 8 ... Seal tool 9 ... Seal tool main body 10 ... Membrane seal 11 ... Membrane seal 12 ... Column magnet 13 ... Communication hole 14 ... Connection tool DESCRIPTION OF SYMBOLS 16 ... Ring-shaped magnet 17 ... Vacuum suction part 18a ... 1st seal part 18b ... 2nd seal part 19 ... Annular groove 20 ... Micro hole
───────────────────────────────────────────────────── フロントページの続き (72)発明者 金井 宗統 東京都千代田区内幸町一丁目１番６号 日本電信電話株式会社内 (72)発明者 宇根 篤暢 東京都武蔵野市御殿山一丁目１番３号 エヌ・ティ・ティ・アドバンステクノロ ジ株式会社内 (56)参考文献 特開 昭63−141670（ＪＰ，Ａ) 特開 昭63−226939（ＪＰ，Ａ) 特開 昭62−221130（ＪＰ，Ａ) 実開 昭60−130647（ＪＰ，Ｕ) 実開 昭59−187147（ＪＰ，Ｕ) 実開 昭58−18341（ＪＰ，Ｕ) 実開 昭62−100835（ＪＰ，Ｕ) 実開 平７−31245（ＪＰ，Ｕ) 実開 昭59−36245（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/68 H01L 21/301 H01L 21/304 H01L 21/30 H01L 21/46 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Sosei Kanai 1-1-6 Uchisaiwai-cho, Chiyoda-ku, Tokyo Nippon Telegraph and Telephone Corporation (72) Inventor Atsunobu Un 1-3-1 Gotenyama, Musashino-shi, Tokyo NTT Advanced Technology Co., Ltd. (56) References JP-A-63-141670 (JP, A) JP-A-63-226939 (JP, A) JP-A-62-221130 (JP, A) Japanese Utility Model Showa 60-130647 (JP, U) Japanese Utility Model Showa 59-187147 (JP, U) Japanese Utility Model Showa 58-18341 (JP, U) Japanese Utility Model Showa 62-100835 (JP, U) Japanese Utility Model 7-31245 (JP, U) Actually open sho 59-36245 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/68 H01L 21/301 H01L 21/304 H01L 21/30 H01L 21 / 46
Claims (7)
上記微小突起の底部を真空排気手段と接続し、上記微小
突起の周囲に環状溝を設け、上記環状溝内に環状のシー
ル具本体および上記シール具本体の両側面に内周部が取
り付けられた環状の膜シールからなるシール具を挿入し
たことを特徴とする真空吸着装置。1. A large number of minute projections are provided on an upper surface of an apparatus main body,
The bottom of the microprojection was connected to a vacuum evacuation means, an annular groove was provided around the microprojection, and an annular sealing member body and inner peripheral portions were attached to both side surfaces of the sealing member body in the annular groove. A vacuum suction device comprising a sealing member made of an annular membrane seal.
段を設けたことを特徴とする請求項１に記載の真空吸着
装置。2. A vacuum suction device according to claim 1 , wherein a positive pressure applying means for applying a positive pressure is provided in said annular groove.
ル具本体の材質を磁性体としたことを特徴とする請求項
１または２に記載の真空吸着装置。3. The sealing device according to claim 2, wherein a magnet is provided below the annular groove, and the material of the sealing member body is a magnetic material.
3. The vacuum suction device according to 1 or 2 .
真空吸着装置用シール具において、環状のシール本体の
両側面に環状の膜シールの内周部を取り付けたことを特
徴とする真空吸着装置用シール具。4. A vacuum-sealing-apparatus sealing device used by being inserted into an annular groove of a vacuum-adsorbing apparatus, wherein inner peripheral portions of an annular film seal are attached to both side surfaces of an annular seal body. Sealing device for suction device.
ものを用いたことを特徴とする請求項４に記載の真空吸
着装置用シール具。5. The sealing device for a vacuum suction device according to claim 4 , wherein a material made of a magnetic material is used as the sealing device main body.
ものを用いたことを特徴とする請求項４または５に記載
の真空吸着装置用シール具。6. The sealing device for a vacuum suction device according to claim 4 , wherein said film seal is made of a polymer material.
起の底部を排気して試料を吸着する真空吸着方法におい
て、上記微小突起の周囲に設けられた環状溝内に環状の
シール具本体および上記シール具本体の両側面に内周部
が取り付けられた環状の膜シールからなるシール具を挿
入し、上記膜シールを上記試料の裏面に密着させること
を特徴とする真空吸着方法。7. A vacuum suction method for evacuating the bottom of a large number of microprojections provided on the upper surface of an apparatus main body and adsorbing a sample, wherein an annular sealing member main body is provided in an annular groove provided around said microprojections. And a sealing tool comprising an annular membrane seal having inner peripheral portions attached to both side surfaces of the sealing tool body, and bringing the membrane seal into close contact with the back surface of the sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4524095A JP3252074B2 (en) | 1994-03-09 | 1995-03-06 | Vacuum suction device, sealing tool for vacuum suction device, and vacuum suction method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3808094 | 1994-03-09 | ||
| JP6-38080 | 1994-03-09 | ||
| JP4524095A JP3252074B2 (en) | 1994-03-09 | 1995-03-06 | Vacuum suction device, sealing tool for vacuum suction device, and vacuum suction method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07302832A JPH07302832A (en) | 1995-11-14 |
| JP3252074B2 true JP3252074B2 (en) | 2002-01-28 |
Family
ID=26377264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4524095A Expired - Lifetime JP3252074B2 (en) | 1994-03-09 | 1995-03-06 | Vacuum suction device, sealing tool for vacuum suction device, and vacuum suction method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3252074B2 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11307619A (en) * | 1998-04-20 | 1999-11-05 | Yamatake Corp | Wafer fixing device |
| JP2000349050A (en) * | 1999-06-09 | 2000-12-15 | Disco Abrasive Syst Ltd | Method and apparatus for cutting of object to be worked |
| JP4287090B2 (en) * | 2002-01-15 | 2009-07-01 | Ｔｏｗａ株式会社 | Jig for cutting resin-sealed substrates |
| JP2008147591A (en) | 2006-12-13 | 2008-06-26 | Nec Electronics Corp | Apparatus and method for manufacturing semiconductor |
| JP5270179B2 (en) * | 2008-01-18 | 2013-08-21 | 株式会社ディスコ | Grinding equipment |
| JP5422176B2 (en) * | 2008-11-06 | 2014-02-19 | 株式会社ディスコ | Holding table and cutting device |
| JP5126091B2 (en) * | 2009-02-02 | 2013-01-23 | ウシオ電機株式会社 | Work stage and exposure apparatus using the work stage |
| JP7186356B2 (en) * | 2019-01-16 | 2022-12-09 | 株式会社東京精密 | Wafer chuck and wafer holder |
| CN112720119B (en) * | 2020-12-19 | 2021-11-30 | 华中科技大学 | Device and method for quickly positioning wafer |
| CN113910072B (en) * | 2021-10-28 | 2022-11-22 | 华海清科股份有限公司 | Sucker turntable and wafer processing system |
| KR102560005B1 (en) * | 2023-04-06 | 2023-07-25 | 김동수 | Jig for inspecting precision parts and inspection method using the same |
-
1995
- 1995-03-06 JP JP4524095A patent/JP3252074B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07302832A (en) | 1995-11-14 |
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