JP2000286329A - Substrate-holding chuck, manufacture thereof, exposure method, manufacture of semiconductor device and aligner - Google Patents

Abstract

PROBLEM TO BE SOLVED: To hold a substrate without impairing the planarity of the substrate, when the substrate of a silicon wafer, etc., is vacuum chucked. SOLUTION: A pin contact substrate holding chuck is composed of a glass substrate 10. This substrate holding chuck 10 is formed by providing a rugged surface on the glass substrate which is polished in a highly precise manner. The rugged surface consists of an auxiliary holding body 2, a first annular wall body 3 and a second annular wall body 4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate holding chuck for fixing a substrate by vacuum suction, and more particularly, to fixing a substrate such as a silicon wafer (hereinafter, referred to as a wafer) or glass in a fine processing process. The present invention relates to a substrate holding chuck to be used.

[0002]

2. Description of the Related Art As an example of this type of substrate holding chuck, there is a substrate (wafer) holding chuck used in an exposure step of a semiconductor manufacturing process. Since this substrate holding chuck is used for microfabrication on the order of microns, it does not merely fix the substrate by vacuum suction, but also realizes proper exposure. It is required to prevent minute deformation.

As a result of investigating the cause of the minute deformation, it has been found that the cause is a particle existing in a working environment for exposure. That is, if the wafer is vacuum-sucked in a state in which particles are interposed between the wafer and the surface of the substrate holding chuck, the particles cause minute deformation of the thin substrate, thereby impairing flatness.

As a substrate holding chuck that solves such a problem, for example, a so-called pin contact type substrate holding chuck described in Japanese Patent Application Laid-Open No. 10-229115 has already been proposed. The substrate holding chuck described in this publication is formed by forming an annular wall on the surface of a substrate made of aluminum nitride ceramic and a fine columnar auxiliary support (pin) inside the substrate by machining. I have. According to such a configuration, the contact area can be significantly reduced without the substrate being in full contact with the substrate holding chuck, so that the probability that particles are interposed between the substrate and the substrate holding chuck is dramatically reduced. it can.
Further, when the wafer is placed on the annular wall and is vacuum-sucked, the bending deformation of the wafer due to the negative pressure is suppressed by the auxiliary support.

[0005]

By the way, with the advent of the advanced information society, the degree of integration of semiconductors has increased exponentially, and the pattern accuracy in the semiconductor manufacturing process has become finer and smaller. For this reason, the manufacturing technology of each step related to the semiconductor manufacturing process is constantly being improved so as to meet such technical requirements.

[0006] An exposure process for forming a circuit pattern on a wafer by photolithography is no exception. In the exposure process, in order to promote miniaturization, shortening the wavelength of exposure light and increasing the NA of the lens are important issues. To realize these, not only the improvement of the exposure light source and the optical system, but also a new problem occurs in the substrate holding chuck that holds the wafer by vacuum suction.

That is, since the depth of focus is further reduced as compared with the prior art by shortening the wavelength and increasing the NA of the optical system, an extremely high level of flatness is maintained to hold the wafer.

However, in the conventional substrate holding chuck, since the ceramic material is machined, the flatness of the substrate is limited, and it is difficult to realize the flatness of 1 μm or less.

In view of such circumstances, the present invention has been devised, and it is an object of the present invention to provide a substrate holding chuck made of a novel material and a method of manufacturing the same so as to realize higher flatness than a ceramic material. With the goal.

It is another object of the present invention to provide a substrate holding chuck in which the contact area with the substrate is reduced and the adverse effect of particles is reduced, and a method of manufacturing the same.

Further, the contact area with the substrate is reduced, and
Another object of the present invention is to provide a substrate holding chuck having improved strength and a method for manufacturing the same.

Further, an exposure method for holding and exposing a wafer so that the exposure light accurately matches an auxiliary support for the exposure light in exposure where the depth of focus becomes shallower as the wavelength of the exposure light becomes shorter. For other purposes.

Another object of the present invention is to provide an exposure apparatus that can execute the above-described exposure method.

[0014]

SUMMARY OF THE INVENTION The idea of the present invention is to focus on the fact that a glass substrate can obtain a highly flat surface by polishing, and this high surface flatness is improved by using at least an auxiliary support and a wall. That is to reflect on the top of the support.

According to a first aspect of the present invention, in a substrate holding chuck for holding a substrate by vacuum suction, a wall for forming a negative pressure when the substrate is vacuum suctioned, and a deformation of the substrate during the vacuum suction is suppressed. A substrate holding chuck comprising a plurality of auxiliary supports, wherein at least one of the wall body and the auxiliary supports is formed so as to protrude from a surface of a glass substrate.

According to a second aspect of the present invention, there is provided the substrate according to the first aspect, wherein the top of the projection is formed flat so that the PV value of the surface of the vacuum-sucked substrate becomes 0.5 μm or less. It is a holding chuck.

A third aspect of the present invention is the substrate holding chuck according to the first or second aspect, wherein the top of the auxiliary support is formed of a flat surface, and the flatness of a virtual plane including the top is 1 μm or less. It is.

A fourth aspect of the present invention is the substrate according to any one of the first to third aspects, wherein the sum of the flat surfaces at the tops of the respective auxiliary supports is 0.5% or less with respect to the substrate area. It is a holding chuck.

According to a fifth aspect of the present invention, there is provided the substrate holding chuck according to any one of the first to fourth aspects, wherein the auxiliary support has a shape whose cross-sectional area decreases as the distance from the glass surface increases.

In the above-described substrate holding chuck, the material of the glass substrate includes amorphous glass and crystallized glass. The glass type is preferably quartz glass, aluminosilicate glass, aluminoborosilicate glass, or photosensitive glass. The glass substrate preferably has a coefficient of thermal expansion of 10 ppm or less so as to suppress minute deformation of the substrate. In the case of a substrate holding chuck used in a process for preventing impurities from being mixed, such as a semiconductor process, alkali-free glass typified by quartz glass is particularly preferable.

As this kind of glass, in addition to quartz glass, 55 to 68% of SiO _{2 and} 7-14 of Al ₂ O ₃ are used.
%, B ₂ O ₃ is 7 to 15%, MgO is 1 to 6%, SrO
Is 1-10% and BaO is 1-10%.

In addition, even if there is no alkali-free glass, a glass containing a small amount of alkali ions can be practically used. For example, 50-70% of SiO ₂ by weight%, A
l ₂ O ₃ is 14~28%, Na ₂ O ₃ is 1 to 5%, Mg
A glass in which O is 1 to 13% and ZnO is 0 to 11% is exemplified.

The surface of the glass substrate has a flatness of 0.5.
μm or less, particularly preferably 0.1 μm or less.
The surface roughness is preferably 0.1 μm or less.

The auxiliary support is a support for supporting the substrate in point contact with the fine projections, and the shape is preferably a cylinder, a prism, a pyramid, a cone, a truncated cone, a truncated pyramid. Among these shapes, in particular, a truncated cone and a truncated pyramid whose cross-sectional area decreases as the distance from the surface of the glass substrate increases and the top is flat are preferable.

This is because the contact area with the substrate can be reduced and the strength can be improved. In particular, since the side surface of the truncated cone or the like is a continuous surface, the adhesion of the antistatic film described later is improved, and a substrate holding chuck having a high antistatic effect can be obtained. The height of the auxiliary support is 0.05μ
m to 0.5 μm is preferred. The height of the auxiliary support is preferably equal to or slightly lower than the wall. The top refers to the area in contact with the substrate and its vicinity,
A curved surface, a flat surface, and a slope are preferable.

The surface processing of the auxiliary support of the glass substrate, etc.
Machining such as grinding, ion milling, sandblasting,
Ultrasonic processing, dry etching and wet etching are suitable.

The wall forms a negative pressure space at the time of vacuum suction of the substrate,
A member formed in cooperation with the surface of the glass substrate and the substrate, and supports the substrate in cooperation with the auxiliary support. One or more of the walls may be provided. And although the wall body may be manufactured by the same manufacturing method as the auxiliary support, it does not require as fine processing as the auxiliary support,
The wall body may be manufactured by another manufacturing method with the auxiliary support body, and the both may be combined to form a substrate holding chuck.

The above-described substrate holding chuck can be suitably used as a means for fixing a substrate in a fine processing process (for example, an exposure process, an inspection process, a processing process such as application of a processing liquid).

It is preferable that the substrate holding chuck be partially or entirely covered with an antistatic film from the viewpoint of preventing the adsorption of particles. As a film forming method, sputtering, CVD, and vapor deposition are suitable, and aluminum nitride, titanium nitride, gold, ITO, silicon, silicon carbide, or the like can be used as the film material.

According to a sixth aspect of the present invention, in the method of manufacturing a substrate holding chuck according to the first to fifth aspects of the present invention, the auxiliary support and at least the auxiliary support of the wall include:
A method for manufacturing a substrate holding chuck, wherein a surface of a glass substrate is selectively etched by a photolithography method so that a portion corresponding to the top remains.

In the above-described invention, examples of the mask thin film adhered to the glass substrate when etched by photolithography include noble metals such as gold and platinum, and thin films such as silicon carbide, silicon nitride, and polycrystalline silicon. . This mask thin film can be formed by sputtering or CVD.

The etching performed in accordance with the patterned pattern of the mask thin film may be either wet or dry. However, the wet etching can be performed isotropically, and the tapered auxiliary support can be easily formed. It is preferable because it can be manufactured.

In the case of dry etching, CF ₄ , CHF ₃ , C
_{2 F 6, SF 6, NF} 3, Cl 2, HCL, gas containing a component such as HBr are suitable. In the case of wet etching, a hydrofluoric acid-based aqueous solution such as an ammonium hydrofluoride mixed solution is suitable.

According to a seventh aspect of the present invention, in the method for manufacturing a substrate holding chuck according to the first to fifth aspects, a mask portion is formed on a surface of the glass substrate at a portion corresponding to the top of the auxiliary support, A method for manufacturing a substrate holding chuck, wherein an auxiliary support is formed by etching away a portion that is not covered by a mask portion.

The eighth invention is the method for manufacturing a substrate holding chuck according to the sixth invention or the seventh invention, wherein the etching is wet etching.

In a ninth aspect, in any one of the sixth to eighth aspects, the surface of the glass substrate is mirror-polished so that the flatness is 0.1 μm or less, and the mirror-polished surface is substantially maintained. And forming at least the auxiliary support and the wall support at the top of the auxiliary support and the wall support.

In the above invention, it is preferable that the top portion of the finally obtained auxiliary support does not impair the flatness formed in the preceding polishing step, but the range in which the flatness sought to be achieved by the invention can be realized. If so, the top of the auxiliary support does not have to completely coincide with the polished surface. “Substantially maintained” does not exclude, for example, surface modification due to cleaning or the like after the polishing process.

According to a tenth aspect, a wafer with a resist is sucked and held by the substrate holding chuck according to any one of the first to fifth aspects, and the resist on the wafer is selectively exposed to thereby form a latent image. This is the exposure method to be formed.

An eleventh invention is a method of manufacturing a semiconductor device for forming a circuit pattern on a wafer by photolithography including the exposure method of the tenth invention.

A twelfth invention is directed to an exposure light source, a substrate holding chuck for holding a substrate to be exposed, a mounting table on which the substrate holding chuck is mounted, and projecting exposure light emitted from the exposure light source onto the substrate. And a projection optical unit, wherein the substrate holding chuck is the substrate holding chuck according to any one of the first to fifth inventions.

[0041]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a substrate holding chuck and a method of manufacturing the same according to the present invention will be described with reference to the drawings. (First Embodiment) FIG. 1 is a sectional view of a substrate holding chuck according to this embodiment holding a substrate, FIG. 2 is a plan view of the substrate holding chuck, and FIG. 3 is an enlarged perspective view of an auxiliary support.

The substrate holding chuck 10 of this embodiment comprises a first annular wall 3 and a second annular wall 4 on which a wafer 20 is mainly placed, and a plurality of auxiliary supports 2 on the surface of the quartz glass substrate 1.
Are formed to protrude.

The first annular wall 3 and the second annular wall 4
Forms a vacuum closed space at the time of vacuum suction in cooperation with the wafer 20. The quartz glass substrate 1 has a substantially disk shape with an outer diameter of 100 mm and a thickness of 2.5 mm.

The first annular wall 3 is formed so as to surround the outer peripheral edge of the glass substrate 1, and the second annular wall 4 is formed one by one at a position where the circumferential direction of the glass substrate 1 is substantially divided into three. ing. The first annular wall 3 has a cylindrical shape with a width of 0.15 mm, a height of 0.5 mm, and an outer diameter of 100 mm. or,
The second annular wall 4 has a width of 0.15 mm and a height of 0.5 m.
m, a cylindrical shape having an outer diameter of 15.0 mm.

The auxiliary support 2 is provided on the bottom 2 as shown in FIG.
A truncated cone shape with a cross-sectional area decreasing from b to the top 2a (upper bottom 0.1 mm, lower bottom 1.1 mm, height 0.5 mm)
It has become. The auxiliary supports 2 are arranged in a grid at a pitch of 2 mm in a region sandwiched between the inner peripheral surface of the first annular wall 3 and the outer peripheral surface of the second annular wall 4. The top 2a has a flat surface and the top of each auxiliary support has a flatness of 0.86.
Included in the virtual plane of μm.

The first annular wall 3 and the second annular wall 4
And discharge air into a closed space formed by the wafer 10 and
A channel 5 (diameter 2 mm) to be inserted is formed between the front and back surfaces of the glass substrate. Each of the flow paths 5 is connected to a vacuum pump (not shown).

The inside of the above-mentioned second annular wall 4 is
A through hole 6 having an inner diameter of 10 mm is formed, and a rod-shaped substrate transfer means provided on a substrate mounting table of the exposure apparatus can move through the through hole.

The substrate holding chuck 10 having the above configuration
Will be described below. The wafer 20 supported by the support bar is placed on the top of the first annular wall 3 and the second annular support 4 by the lowering of the support bar (see FIG. 1). Next, the closed space is exhausted from the flow path 5 by operating a vacuum pump (not shown), and the closed space is set to a negative pressure to fix the wafer 20 to the substrate holding chuck 10.

As described above, since the wafer 20 is fixed, the flatness of the wafer is 0.34 μm, and good flatness was confirmed. The evaluation results of the wafer holding chuck of this embodiment are shown in Table 1 of FIG. 8 together with other examples.

Next, a method of manufacturing the above-described substrate holding chuck 10 will be described with reference to FIGS. First, a glass substrate made of quartz is roughly shaped like a wafer (100 mm).
(The outer diameter and thickness of the substrate is 2.5 mm), and the front and back surfaces of the substrate are wrapped and polished to a mirror surface. Cerium oxide was used for lapping and colloidal silica was used for polishing for polishing. By this polishing, the surface of the glass substrate had a flatness of 0.67 μm.

Next, a mask thin film 11 is formed on the polished surface of the glass substrate 18 obtained in the previous step. This mask film 11
Has a two-layer structure of a Cr film 12 (500 angstrom film thickness) and an Au film 13 (1000 angstrom film thickness) from the glass substrate side, and was sequentially formed by sputtering.
Then, a resist is applied on the mask thin film 11, and the portions corresponding to the tops of the first annular wall, the second annular wall, and the auxiliary support are patterned by a normal photolithography method. No. 15 (see FIG. 5).

Next, the mask pattern 15 formed in the previous step
According to the above, wet etching is performed with a mixed solution of an iodine aqueous solution and a potassium iodide aqueous solution to first pattern the Au film, and then Cr is etched with a cerium ammonium nitrate aqueous solution.
The film was patterned. Thus, a mask thin film pattern 16 having a two-layer structure composed of the Cr film and the Au film was formed on the glass substrate (see FIG. 6).

Next, the quartz glass substrate on which the mask thin film pattern was formed was immersed in a mixed aqueous solution of hydrofluoric acid and ammonium fluoride, and the glass surface was chemically etched. Since this chemical etching is isotropic etching, all of the auxiliary supports remaining by the etching have a truncated cone shape (upper bottom 0.1 mm, lower bottom 1.1 mm, cross section continuously reduced as the distance from the substrate increases). Height 0.5 mm). The cross section of the first and second annular bodies was a trapezoid having an upper surface of 0.1 mm, a lower surface of 1.1 mm, and a height of 0.5 mm (see FIG. 7).

Next, the mask pattern film on the glass substrate was mixed with a mixed solution of an iodine aqueous solution and a potassium iodide aqueous solution.
The mask was removed by successive immersion in an aqueous cerium ammonium nitrate solution, and finally a through hole was formed by drilling using a 10 mm drill.

(Second Embodiment to Fourth Embodiment) In the second to fourth embodiments, the shape of the glass substrate and the layout and shape of the wall and the auxiliary support portion are changed from those of the first embodiment. is there. The difference between Examples 2 to 4 lies in the flatness of the top of the auxiliary support.

In each of the examples, the quartz glass substrate as a starting material has a square shape of 230 mm square and a thickness of 10 mm. The wall was formed on the outer periphery of the quartz glass substrate so as to have a ring shape with a width of 4 mm and an outer diameter of 200 mm. The auxiliary support has a pitch of 1.3 mm inside this wall.
Are arranged in a lattice pattern. The auxiliary support has an upper surface of 0.1 mm,
It was shaped like a truncated cone with a lower surface of 0.2 mm and a height of 0.05 mm.

The pattern was formed by the same photolithography method as in the above embodiment. The flatness of the glass substrate was 0.1 μm in Example 2, 0.5 μm in Example 3, and 1.0 μm in Example 4.

(Fifth Embodiment) In this embodiment, a glass substrate was formed into a disk shape having an outer diameter of 200 mm and a thickness of 10 mm. The outer peripheral wall protruded from the outer periphery of the quartz glass substrate, and auxiliary support members were arranged inside the lattice in a lattice shape with a pitch of 13 mm. or,
The shape of the auxiliary support is a lower base diameter of 2 mm and an upper base diameter of 1.9 m.
m, and a truncated cone shape with a height of 0.05 mm.

(Sixth Embodiment) In the manufacturing method of the first to fifth embodiments, the mask thin film at the time of etching is made of Cr and Au.
However, in this embodiment, a single-layer SiC film (800 angstrom thick) formed by sputtering was used. As a starting material of the substrate, a quartz glass substrate having a square shape of 230 mm square and a thickness of 10 mm was used.

First, the surface of this quartz glass substrate is
Mirror polishing was performed in the same manner as in the example, and an 800 ° -thick SiC film was formed on the polished surface by sputtering. Then, by an ordinary photolithography method, a 4 mm-wide SiC mask pattern for the outer wall is formed on the entire peripheral portion of the quartz glass substrate, and an auxiliary support made of a square having a side length of 0.4 mm inside the outer-wall pattern. 2m SiC mask pattern
It was formed at an m pitch.

Next, the quartz glass with the SiC mask pattern was immersed in an aqueous solution of ammonium fluoride hydrofluoride, and the surface of the glass substrate was subjected to isotropic chemical etching. This allows
Lower bottom 0.35mm, Upper bottom 0.08mm, Height 0.16m
A square truncated pyramid of m and an outer wall having a height of 0.16 mm and a width of 4 mm were formed on a glass substrate.

(Seventh Embodiment) In this embodiment, an etching mask for a glass substrate is formed by screen printing instead of the sputtered film of the above embodiment. The starting material used was a 250 mm square, 4 mm thick aluminosilicate glass substrate (NA40: manufactured by HOYA Corporation).

First, the aluminosilicate glass substrate was mirror-polished as in Example 1, and a mask pattern was formed on the polished surface by screen printing. This mask pattern is made of an epoxy resin and is formed on the outer wall mask having a width of 2 mm and formed along the outer circumference of a circle having a diameter of 200 mm. And a mask.

Next, the surface of the glass substrate with the mask pattern was dry-etched. Dry etching is ECR
Using a plasma etching apparatus, a mixed gas of CF ₄ and CH ₄ is supplied onto a glass substrate, and chemical etching is performed by reactive plasma.

By this dry etching, an aluminosilicate glass substrate having an outer wall and an auxiliary support projecting from the surface was obtained. The outer wall is formed along the entire outer peripheral edge of the substrate and has a shape of 0.05 mm in height and 2 mm in width.
Lower bottom 0.25mm, Upper bottom 0.2mm, Height 0.05mm
Frustoconical shape.

(Eighth Embodiment) This embodiment uses a circular photosensitive glass (PEG3: H) having a diameter of 70 mm as a starting material.
OYA Corporation) was used. In this embodiment, a photomask for forming an outer wall and an auxiliary support pattern is manufactured in advance before the surface processing of the photosensitive glass.

In this photomask, the portion corresponding to the corners of the outer wall and the auxiliary support is a portion through which ultraviolet light is transmitted. The outer wall pattern has an annular shape with a diameter of 70 mm and a width of 2 mm, and the auxiliary support pattern has a regular octagon shape with a diagonal length of 0.6 mm. The auxiliary support patterns are located inside the outer wall pattern and are arranged in a grid pattern at a pitch of 10 mm.

Next, the photosensitive glass substrate which has been mirror-polished in the same manner as in the first embodiment is irradiated with ultraviolet light through the above-described photomask to expose the portion to be removed. Then, the photosensitive glass is heat-treated at 500 ° C., and then immersed in a 5% aqueous solution of hydrofluoric acid to remove the exposed portion.

As a result, a glass substrate having the outer wall and the auxiliary support formed so as to project was obtained. The outer wall has a shape with a height of 0.5 mm and a width of 2 mm on the outer peripheral edge of the glass substrate, and the auxiliary support has a height of 0.5 mm and a diagonal length of 0.1 mm.
It became a regular octagonal prism having a regular octagon of 6 mm as the bottom surface.

(Comparative Example) An alumina substrate having an outer diameter of 200 m
m, a disk shape with a thickness of 10 mm. The outer peripheral wall protrudes from the outer periphery of the alumina substrate and has a pitch of 2.0 mm inside.
The auxiliary supports were arranged in a grid pattern. The shape of the auxiliary support is a square pole having a side length of 0.15 mm. The outer peripheral wall and the auxiliary support were formed by cutting machining.

(Evaluation Results of Each Example) Table 1 in FIG. 8 shows the results of the evaluation of each item of each substrate holding chuck of the first to eighth examples in comparison with the comparative example. As can be seen from the evaluation results, the substrate holding chuck of this embodiment has a uniform height at the top of each of the plurality of auxiliary supports. Further, it can be seen that the contact ratio between the wafer and the substrate holding chuck can be reduced when the wafer is vacuum-sucked by the substrate holding chuck of the present embodiment. Further, it can be seen that the flatness of the substrate at the time of suction is not impaired. In addition, it was confirmed from the evaluation item of “defective rate of defective pattern” that proper exposure at a short wavelength was realized.

(Exposure Method, Semiconductor Device Manufacturing Method and Exposure Apparatus) The substrate holding chuck of the first embodiment was mounted on an exposure apparatus to form a semiconductor circuit pattern. The exposure device is
i-line exposure light source, optical means for forming an image of a reticle pattern on the wafer by exposure light emitted from the light source, a substrate holding chuck holding a resist-equipped wafer, and movably holding the substrate holding chuck. It consists of a mounting table. The substrate holding chuck employs the substrate holding chuck of the first embodiment described above. The flow path for vacuum suction of the substrate holding chuck is connected to an external vacuum pump.

With this exposure apparatus, a semiconductor device was manufactured by forming a circuit pattern on a wafer. On the wafer obtained by this exposure method, no defective circuit pattern due to the defocus of the exposure light was found.

[0074]

According to the substrate holding chuck of the present invention, since the top portion of the glass substrate substantially maintains the high surface flatness, the substrate can be vacuum-adsorbed while suppressing the deformation of the substrate. Further, since the contact area between the substrate and the substrate holding chuck can be reduced, the deterioration of the flatness of the substrate due to particles can be prevented.

According to the method of manufacturing a substrate holding chuck of the present invention, the above-described substrate holding chuck can be easily manufactured.

Further, according to the exposure method, the semiconductor manufacturing method and the exposure apparatus of the present invention, it is possible to prevent the occurrence of defective products due to the shift of the focal position in the exposure light in the short wavelength band.

[Brief description of the drawings]

FIG. 1 is a sectional view of an embodiment of the present invention.

FIG. 2 is a plan view of the substrate holding chuck according to the embodiment.

FIG. 3 is an enlarged perspective view of an auxiliary support.

FIG. 4 is a process chart of the manufacturing method according to the present embodiment.

FIG. 5 is a process chart of the manufacturing method according to the present embodiment.

FIG. 6 is a process chart of the manufacturing method according to the present embodiment.

FIG. 7 is a process chart of the manufacturing method according to the present embodiment.

FIG. 8 is a table showing evaluation results of this example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Quartz glass substrate 2 ... Auxiliary support 3 ... First annular wall 4 ... Second annular wall 10 ... Substrate holding chuck 20 ... Wafer

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tadashi Misaki 2-7-5 Nakaochiai, Shinjuku-ku, Tokyo F-term in Hoya Corporation (reference) 3C016 DA01 5F031 CA02 CA05 HA02 HA03 HA08 HA13 MA27 PA30 5F046 CC08

Claims (12)

[Claims] 1. A substrate holding chuck for holding a substrate by vacuum suction, comprising: a wall forming a negative pressure when vacuum sucking the substrate; and a plurality of auxiliary members for suppressing deformation of the substrate during vacuum suction. A substrate holding chuck comprising: a support; and at least an auxiliary support of the wall and the auxiliary support is formed so as to protrude from a glass substrate surface. 2. The P on the surface of a vacuum-adsorbed substrate.
2. The substrate holding chuck according to claim 1, wherein the top of the auxiliary support is formed flat so that the -V value is 0.5 [mu] m or less. 3. The substrate holding chuck according to claim 1, wherein the top of the auxiliary support is formed of a flat surface, and the flatness of a virtual plane including the top is 1 μm or less. 4. The sum of the flat surfaces at the top of each auxiliary support is:
The substrate holding chuck according to any one of claims 1 to 3, wherein the amount is 0.5% or less with respect to the substrate area. 5. The substrate holding chuck according to claim 1, wherein the auxiliary support has a shape whose cross-sectional area decreases as the distance from the glass surface increases. 6. The method for manufacturing a substrate holding chuck according to claim 1, wherein at least the auxiliary support of the auxiliary support and the wall is formed such that a portion corresponding to the top remains. A method for manufacturing a substrate holding chuck, wherein a surface of a substrate is selectively etched by a photolithography method. 7. A manufacturing method for manufacturing a substrate holding chuck according to claim 1, wherein a mask portion is formed on a surface of the glass substrate at least in a portion corresponding to a top portion of the auxiliary support and the wall of the auxiliary support. A method of manufacturing a substrate holding chuck, wherein a portion not covered with a portion is removed by etching to form at least an auxiliary support of an auxiliary support and a wall. 8. The method for manufacturing a substrate holding chuck according to claim 6, wherein the etching is wet etching. 9. The glass substrate surface is mirror-polished so as to have a flatness of 1 μm or less, and the mirror-polished surface is substantially maintained to be at least the top of the auxiliary support and the auxiliary support of the wall. The method for manufacturing a substrate holding chuck according to claim 6, wherein at least the auxiliary support of the auxiliary support and the wall is formed. 10. A wafer with a resist is suction-held by the substrate holding chuck according to any one of claims 1 to 5, and the resist on the wafer is selectively exposed to form a latent image. An exposure method characterized by forming. 11. A method for manufacturing a semiconductor device, comprising forming a circuit pattern on a wafer by a photolithography method including the exposure method according to claim 10. 12. An exposure light source, a substrate holding chuck for holding a substrate to be exposed, a mounting table for mounting the substrate holding chuck, and projection optical means for projecting exposure light emitted from the exposure light source onto the substrate. 6. An exposure apparatus, comprising: the substrate holding chuck according to claim 1;