JPS5664465A - C-mos integrated circuit - Google Patents

C-mos integrated circuit

Info

Publication number
JPS5664465A
JPS5664465A JP13952779A JP13952779A JPS5664465A JP S5664465 A JPS5664465 A JP S5664465A JP 13952779 A JP13952779 A JP 13952779A JP 13952779 A JP13952779 A JP 13952779A JP S5664465 A JPS5664465 A JP S5664465A
Authority
JP
Japan
Prior art keywords
region
wire
drain
gate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13952779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6150388B2 (enExample
Inventor
Tatsuji Asakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP13952779A priority Critical patent/JPS5664465A/ja
Publication of JPS5664465A publication Critical patent/JPS5664465A/ja
Publication of JPS6150388B2 publication Critical patent/JPS6150388B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP13952779A 1979-10-29 1979-10-29 C-mos integrated circuit Granted JPS5664465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13952779A JPS5664465A (en) 1979-10-29 1979-10-29 C-mos integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13952779A JPS5664465A (en) 1979-10-29 1979-10-29 C-mos integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62228132A Division JPS6372149A (ja) 1987-09-11 1987-09-11 Ｃｍｏｓ集積回路

Publications (2)

Publication Number Publication Date
JPS5664465A true JPS5664465A (en) 1981-06-01
JPS6150388B2 JPS6150388B2 (enExample) 1986-11-04

Family

ID=15247353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13952779A Granted JPS5664465A (en) 1979-10-29 1979-10-29 C-mos integrated circuit

Country Status (1)

Country Link
JP (1) JPS5664465A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
JPS5947766A (ja) * 1982-09-10 1984-03-17 Hitachi Ltd 絶縁ゲ−ト形半導体装置とその製造法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979189A (enExample) * 1972-11-01 1974-07-31
JPS49112574A (enExample) * 1973-02-24 1974-10-26
JPS5140884A (enExample) * 1974-10-04 1976-04-06 Hitachi Ltd
JPS51130183A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor ic and its process
JPS53105985A (en) * 1977-02-28 1978-09-14 Nec Corp Conmplementary-type insulating gate field effect transistor
JPS5413779A (en) * 1977-07-04 1979-02-01 Toshiba Corp Semiconductor integrated circuit device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979189A (enExample) * 1972-11-01 1974-07-31
JPS49112574A (enExample) * 1973-02-24 1974-10-26
JPS5140884A (enExample) * 1974-10-04 1976-04-06 Hitachi Ltd
JPS51130183A (en) * 1975-05-06 1976-11-12 Matsushita Electric Ind Co Ltd Semiconductor ic and its process
JPS53105985A (en) * 1977-02-28 1978-09-14 Nec Corp Conmplementary-type insulating gate field effect transistor
JPS5413779A (en) * 1977-07-04 1979-02-01 Toshiba Corp Semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
JPS5947766A (ja) * 1982-09-10 1984-03-17 Hitachi Ltd 絶縁ゲ−ト形半導体装置とその製造法

Also Published As

Publication number Publication date
JPS6150388B2 (enExample) 1986-11-04

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