JPS5659694A - Manufacture of thin film - Google Patents
Manufacture of thin filmInfo
- Publication number
- JPS5659694A JPS5659694A JP13356679A JP13356679A JPS5659694A JP S5659694 A JPS5659694 A JP S5659694A JP 13356679 A JP13356679 A JP 13356679A JP 13356679 A JP13356679 A JP 13356679A JP S5659694 A JPS5659694 A JP S5659694A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- annealing
- manufacture
- irradiating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13356679A JPS5659694A (en) | 1979-10-18 | 1979-10-18 | Manufacture of thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13356679A JPS5659694A (en) | 1979-10-18 | 1979-10-18 | Manufacture of thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5659694A true JPS5659694A (en) | 1981-05-23 |
JPS6116758B2 JPS6116758B2 (enrdf_load_stackoverflow) | 1986-05-01 |
Family
ID=15107792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13356679A Granted JPS5659694A (en) | 1979-10-18 | 1979-10-18 | Manufacture of thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5659694A (enrdf_load_stackoverflow) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57208124A (en) * | 1981-06-18 | 1982-12-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5812320A (ja) * | 1981-07-15 | 1983-01-24 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS5855395A (ja) * | 1981-09-30 | 1983-04-01 | Toshiba Corp | シリコン単結晶膜の成長方法 |
JPS58112333A (ja) * | 1981-12-26 | 1983-07-04 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS5915874U (ja) * | 1982-07-23 | 1984-01-31 | フシマン株式会社 | 自力式パイロツト作動型調整弁 |
JPS60200887A (ja) * | 1984-03-23 | 1985-10-11 | Nippon Sheet Glass Co Ltd | 磁性薄膜の製造方法 |
JPS61127118A (ja) * | 1984-11-26 | 1986-06-14 | Sony Corp | 半導体薄膜の形成方法 |
JPS6384013A (ja) * | 1986-09-27 | 1988-04-14 | Agency Of Ind Science & Technol | 半導体結晶層の製造方法 |
US6638800B1 (en) | 1992-11-06 | 2003-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing apparatus and laser processing process |
-
1979
- 1979-10-18 JP JP13356679A patent/JPS5659694A/ja active Granted
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57208124A (en) * | 1981-06-18 | 1982-12-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5812320A (ja) * | 1981-07-15 | 1983-01-24 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS5855395A (ja) * | 1981-09-30 | 1983-04-01 | Toshiba Corp | シリコン単結晶膜の成長方法 |
JPS58112333A (ja) * | 1981-12-26 | 1983-07-04 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS5915874U (ja) * | 1982-07-23 | 1984-01-31 | フシマン株式会社 | 自力式パイロツト作動型調整弁 |
JPS60200887A (ja) * | 1984-03-23 | 1985-10-11 | Nippon Sheet Glass Co Ltd | 磁性薄膜の製造方法 |
JPS61127118A (ja) * | 1984-11-26 | 1986-06-14 | Sony Corp | 半導体薄膜の形成方法 |
JPS6384013A (ja) * | 1986-09-27 | 1988-04-14 | Agency Of Ind Science & Technol | 半導体結晶層の製造方法 |
US6638800B1 (en) | 1992-11-06 | 2003-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing apparatus and laser processing process |
US7179726B2 (en) | 1992-11-06 | 2007-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing apparatus and laser processing process |
US7799665B2 (en) | 1992-11-06 | 2010-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing apparatus and laser processing process |
Also Published As
Publication number | Publication date |
---|---|
JPS6116758B2 (enrdf_load_stackoverflow) | 1986-05-01 |
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