JPS5659694A - Manufacture of thin film - Google Patents

Manufacture of thin film

Info

Publication number
JPS5659694A
JPS5659694A JP13356679A JP13356679A JPS5659694A JP S5659694 A JPS5659694 A JP S5659694A JP 13356679 A JP13356679 A JP 13356679A JP 13356679 A JP13356679 A JP 13356679A JP S5659694 A JPS5659694 A JP S5659694A
Authority
JP
Japan
Prior art keywords
film
thin film
annealing
manufacture
irradiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13356679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6116758B2 (enrdf_load_stackoverflow
Inventor
Koichiro Ootori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and Technology filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13356679A priority Critical patent/JPS5659694A/ja
Publication of JPS5659694A publication Critical patent/JPS5659694A/ja
Publication of JPS6116758B2 publication Critical patent/JPS6116758B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP13356679A 1979-10-18 1979-10-18 Manufacture of thin film Granted JPS5659694A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13356679A JPS5659694A (en) 1979-10-18 1979-10-18 Manufacture of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13356679A JPS5659694A (en) 1979-10-18 1979-10-18 Manufacture of thin film

Publications (2)

Publication Number Publication Date
JPS5659694A true JPS5659694A (en) 1981-05-23
JPS6116758B2 JPS6116758B2 (enrdf_load_stackoverflow) 1986-05-01

Family

ID=15107792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13356679A Granted JPS5659694A (en) 1979-10-18 1979-10-18 Manufacture of thin film

Country Status (1)

Country Link
JP (1) JPS5659694A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208124A (en) * 1981-06-18 1982-12-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5812320A (ja) * 1981-07-15 1983-01-24 Fujitsu Ltd 半導体装置の製造方法
JPS5855395A (ja) * 1981-09-30 1983-04-01 Toshiba Corp シリコン単結晶膜の成長方法
JPS58112333A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 半導体装置の製造方法
JPS5915874U (ja) * 1982-07-23 1984-01-31 フシマン株式会社 自力式パイロツト作動型調整弁
JPS60200887A (ja) * 1984-03-23 1985-10-11 Nippon Sheet Glass Co Ltd 磁性薄膜の製造方法
JPS61127118A (ja) * 1984-11-26 1986-06-14 Sony Corp 半導体薄膜の形成方法
JPS6384013A (ja) * 1986-09-27 1988-04-14 Agency Of Ind Science & Technol 半導体結晶層の製造方法
US6638800B1 (en) 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208124A (en) * 1981-06-18 1982-12-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5812320A (ja) * 1981-07-15 1983-01-24 Fujitsu Ltd 半導体装置の製造方法
JPS5855395A (ja) * 1981-09-30 1983-04-01 Toshiba Corp シリコン単結晶膜の成長方法
JPS58112333A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 半導体装置の製造方法
JPS5915874U (ja) * 1982-07-23 1984-01-31 フシマン株式会社 自力式パイロツト作動型調整弁
JPS60200887A (ja) * 1984-03-23 1985-10-11 Nippon Sheet Glass Co Ltd 磁性薄膜の製造方法
JPS61127118A (ja) * 1984-11-26 1986-06-14 Sony Corp 半導体薄膜の形成方法
JPS6384013A (ja) * 1986-09-27 1988-04-14 Agency Of Ind Science & Technol 半導体結晶層の製造方法
US6638800B1 (en) 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7179726B2 (en) 1992-11-06 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7799665B2 (en) 1992-11-06 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process

Also Published As

Publication number Publication date
JPS6116758B2 (enrdf_load_stackoverflow) 1986-05-01

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