JPS6116758B2 - - Google Patents
Info
- Publication number
- JPS6116758B2 JPS6116758B2 JP13356679A JP13356679A JPS6116758B2 JP S6116758 B2 JPS6116758 B2 JP S6116758B2 JP 13356679 A JP13356679 A JP 13356679A JP 13356679 A JP13356679 A JP 13356679A JP S6116758 B2 JPS6116758 B2 JP S6116758B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- polycrystalline
- protective film
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 35
- 239000010408 film Substances 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 238000000354 decomposition reaction Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010348 incorporation Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13356679A JPS5659694A (en) | 1979-10-18 | 1979-10-18 | Manufacture of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13356679A JPS5659694A (en) | 1979-10-18 | 1979-10-18 | Manufacture of thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5659694A JPS5659694A (en) | 1981-05-23 |
| JPS6116758B2 true JPS6116758B2 (enrdf_load_stackoverflow) | 1986-05-01 |
Family
ID=15107792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13356679A Granted JPS5659694A (en) | 1979-10-18 | 1979-10-18 | Manufacture of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5659694A (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57208124A (en) * | 1981-06-18 | 1982-12-21 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5812320A (ja) * | 1981-07-15 | 1983-01-24 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS5855395A (ja) * | 1981-09-30 | 1983-04-01 | Toshiba Corp | シリコン単結晶膜の成長方法 |
| JPS58112333A (ja) * | 1981-12-26 | 1983-07-04 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6017583Y2 (ja) * | 1982-07-23 | 1985-05-29 | フシマン株式会社 | 自力式パイロツト作動型調整弁 |
| JPS60200887A (ja) * | 1984-03-23 | 1985-10-11 | Nippon Sheet Glass Co Ltd | 磁性薄膜の製造方法 |
| JPH0824103B2 (ja) * | 1984-11-26 | 1996-03-06 | ソニー株式会社 | 薄膜トランジスタの製造方法 |
| JPS6384013A (ja) * | 1986-09-27 | 1988-04-14 | Agency Of Ind Science & Technol | 半導体結晶層の製造方法 |
| US5643801A (en) | 1992-11-06 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method and alignment |
-
1979
- 1979-10-18 JP JP13356679A patent/JPS5659694A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5659694A (en) | 1981-05-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS56135969A (en) | Manufacture of semiconductor device | |
| EP0193021A1 (en) | A method of forming an ion implanted gallium arsenide device | |
| JPS6116758B2 (enrdf_load_stackoverflow) | ||
| JPH1050624A (ja) | 化学元素の受容材料中への導入方法 | |
| JPS57194518A (en) | Manufacture of polycrystalline silicon | |
| JPH0472735A (ja) | 半導体ウエーハのゲッタリング方法 | |
| JP3312150B2 (ja) | 炭化ケイ素への不純物ドーピング方法 | |
| JPH07112960B2 (ja) | レーザ除去を使用した清浄な良好に整列されたＣｄＴｅ表面の生成 | |
| JPS56126914A (en) | Manufacture of semiconductor device | |
| JP2771472B2 (ja) | 半導体装置の製造方法 | |
| JPH0480880B2 (enrdf_load_stackoverflow) | ||
| JPS58182816A (ja) | シリコン系半導体材料の再結晶方法 | |
| JPS637022B2 (enrdf_load_stackoverflow) | ||
| JPH03155124A (ja) | 半導体膜の製造方法 | |
| EP0389694A1 (en) | Semiconductor device manufacture with laser-induced chemical etching | |
| JPS6459807A (en) | Material for thin-film transistor | |
| JPS6231111A (ja) | 結晶性半導体薄膜の製造方法 | |
| JPH023539B2 (enrdf_load_stackoverflow) | ||
| JPS5839014A (ja) | 半導体装置の製造方法 | |
| JPS5943815B2 (ja) | エピタキシヤル成長法 | |
| JPH0361335B2 (enrdf_load_stackoverflow) | ||
| JPH04104042A (ja) | シリコン中の酸素濃度測定方法 | |
| Jadin et al. | Excimer-laser-induced ablation of thin selenium films | |
| JPH0388322A (ja) | 熱処理方法 | |
| JPH0480878B2 (enrdf_load_stackoverflow) |