JPS637022B2 - - Google Patents

Info

Publication number
JPS637022B2
JPS637022B2 JP3506680A JP3506680A JPS637022B2 JP S637022 B2 JPS637022 B2 JP S637022B2 JP 3506680 A JP3506680 A JP 3506680A JP 3506680 A JP3506680 A JP 3506680A JP S637022 B2 JPS637022 B2 JP S637022B2
Authority
JP
Japan
Prior art keywords
pressure
compound semiconductor
semiconductor crystal
crystal
laser annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3506680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56131934A (en
Inventor
Akihiro Shibatomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3506680A priority Critical patent/JPS56131934A/ja
Publication of JPS56131934A publication Critical patent/JPS56131934A/ja
Publication of JPS637022B2 publication Critical patent/JPS637022B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP3506680A 1980-03-19 1980-03-19 Manufacture of semiconductor device Granted JPS56131934A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3506680A JPS56131934A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3506680A JPS56131934A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56131934A JPS56131934A (en) 1981-10-15
JPS637022B2 true JPS637022B2 (enrdf_load_stackoverflow) 1988-02-15

Family

ID=12431639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3506680A Granted JPS56131934A (en) 1980-03-19 1980-03-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56131934A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873112A (ja) * 1981-10-28 1983-05-02 Nippon Hoso Kyokai <Nhk> レ−ザアニ−ル方法
JP2582741B2 (ja) * 1991-11-07 1997-02-19 株式会社日本製鋼所 エピタキシャル薄膜の形成方法
JP5099576B2 (ja) 2006-02-23 2012-12-19 株式会社Ｉｈｉ 化合物半導体の活性化方法及び装置
JP5210549B2 (ja) * 2007-05-31 2013-06-12 株式会社半導体エネルギー研究所 レーザアニール方法
JP2018022712A (ja) * 2014-12-10 2018-02-08 東京エレクトロン株式会社 微細構造形成方法、半導体デバイスの製造方法、及びｃｍｏｓの形成方法

Also Published As

Publication number Publication date
JPS56131934A (en) 1981-10-15

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