JPS56131934A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56131934A JPS56131934A JP3506680A JP3506680A JPS56131934A JP S56131934 A JPS56131934 A JP S56131934A JP 3506680 A JP3506680 A JP 3506680A JP 3506680 A JP3506680 A JP 3506680A JP S56131934 A JPS56131934 A JP S56131934A
- Authority
- JP
- Japan
- Prior art keywords
- ash3
- substrate
- improved
- laser
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 2
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract 2
- 230000004913 activation Effects 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000005224 laser annealing Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To obtain good crystal characteristics by exercising semiconductor crystal laser anneal with at least one of the crystal component elements at high vapor pressure. CONSTITUTION:A GaAS substrate 5 is set to a substrate holder 6 which has a cooling device 8. Then, the flow rate of AsH3 is controlled by a flowmeter 11 through a cock 10 from AsH3 cylinder 9. Then, laser 1 is irradiated selectively to required parts. By this way, exhalation and evaporation of As during laser annealing can be prevented, without setting passivation film on the surface of substrate 5. Thus, activation rate is improved and dispersion decreased. Mobility is also improved and state of the surface is kept in specular state.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3506680A JPS56131934A (en) | 1980-03-19 | 1980-03-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3506680A JPS56131934A (en) | 1980-03-19 | 1980-03-19 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56131934A true JPS56131934A (en) | 1981-10-15 |
JPS637022B2 JPS637022B2 (en) | 1988-02-15 |
Family
ID=12431639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3506680A Granted JPS56131934A (en) | 1980-03-19 | 1980-03-19 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56131934A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5873112A (en) * | 1981-10-28 | 1983-05-02 | Nippon Hoso Kyokai <Nhk> | Laser annealing |
JPH05129203A (en) * | 1991-11-07 | 1993-05-25 | Japan Steel Works Ltd:The | Formation of epitaxial thin film |
WO2007097103A1 (en) * | 2006-02-23 | 2007-08-30 | Ihi Corporation | Method and apparatus for activating compound semiconductor |
JP2008300617A (en) * | 2007-05-31 | 2008-12-11 | Ihi Corp | Laser annealing method and laser annealing device |
WO2016093287A1 (en) * | 2014-12-10 | 2016-06-16 | 東京エレクトロン株式会社 | Microstructure formation method, method for manufacturing semiconductor device, and cmos formation method |
-
1980
- 1980-03-19 JP JP3506680A patent/JPS56131934A/en active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5873112A (en) * | 1981-10-28 | 1983-05-02 | Nippon Hoso Kyokai <Nhk> | Laser annealing |
JPH05129203A (en) * | 1991-11-07 | 1993-05-25 | Japan Steel Works Ltd:The | Formation of epitaxial thin film |
WO2007097103A1 (en) * | 2006-02-23 | 2007-08-30 | Ihi Corporation | Method and apparatus for activating compound semiconductor |
JP2007227629A (en) * | 2006-02-23 | 2007-09-06 | Ishikawajima Harima Heavy Ind Co Ltd | Method and device for activating compound semiconductor |
US7888250B2 (en) | 2006-02-23 | 2011-02-15 | Ihi Corporation | Method and apparatus for activating compound semiconductor |
KR101102635B1 (en) * | 2006-02-23 | 2012-01-04 | 가부시키가이샤 아이에이치아이 | Method and apparatus for activating compound semiconductor |
JP2008300617A (en) * | 2007-05-31 | 2008-12-11 | Ihi Corp | Laser annealing method and laser annealing device |
WO2016093287A1 (en) * | 2014-12-10 | 2016-06-16 | 東京エレクトロン株式会社 | Microstructure formation method, method for manufacturing semiconductor device, and cmos formation method |
Also Published As
Publication number | Publication date |
---|---|
JPS637022B2 (en) | 1988-02-15 |
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