JPS5652751A - Photomask correcting method - Google Patents

Photomask correcting method

Info

Publication number
JPS5652751A
JPS5652751A JP12864279A JP12864279A JPS5652751A JP S5652751 A JPS5652751 A JP S5652751A JP 12864279 A JP12864279 A JP 12864279A JP 12864279 A JP12864279 A JP 12864279A JP S5652751 A JPS5652751 A JP S5652751A
Authority
JP
Japan
Prior art keywords
layer
photomask
defective part
photoresist
light shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12864279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6159506B2 (enrdf_load_stackoverflow
Inventor
Tomihiro Nakada
Akira Kaneki
Koji Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP12864279A priority Critical patent/JPS5652751A/ja
Publication of JPS5652751A publication Critical patent/JPS5652751A/ja
Publication of JPS6159506B2 publication Critical patent/JPS6159506B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP12864279A 1979-10-05 1979-10-05 Photomask correcting method Granted JPS5652751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12864279A JPS5652751A (en) 1979-10-05 1979-10-05 Photomask correcting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12864279A JPS5652751A (en) 1979-10-05 1979-10-05 Photomask correcting method

Publications (2)

Publication Number Publication Date
JPS5652751A true JPS5652751A (en) 1981-05-12
JPS6159506B2 JPS6159506B2 (enrdf_load_stackoverflow) 1986-12-16

Family

ID=14989861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12864279A Granted JPS5652751A (en) 1979-10-05 1979-10-05 Photomask correcting method

Country Status (1)

Country Link
JP (1) JPS5652751A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111038A (ja) * 1981-12-23 1983-07-01 Matsushita Electronics Corp フオトマスクの修正方法
JPS59202864A (ja) * 1983-05-04 1984-11-16 Oki Electric Ind Co Ltd ワイヤドツト印字ヘツド
FR2547111A1 (fr) * 1983-05-31 1984-12-07 American Telephone & Telegraph Procede de correction de masques lithographiques
US6399465B1 (en) * 2000-02-24 2002-06-04 United Microelectronics Corp. Method for forming a triple well structure
DE19856295C2 (de) * 1998-02-27 2002-06-20 Fraunhofer Ges Forschung Verfahren zur Herstellung von Kohlenstoffelektroden und chemischen Feldeffektransistoren sowie dadurch hergestellte Kohlenstoffelektroden und chemische Feldeffektransistoren und deren Verwendung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136873A (enrdf_load_stackoverflow) * 1974-09-19 1976-03-27 Nippon Electric Co
JPS51111075A (en) * 1975-03-26 1976-10-01 Nec Corp Photo etching photo mask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136873A (enrdf_load_stackoverflow) * 1974-09-19 1976-03-27 Nippon Electric Co
JPS51111075A (en) * 1975-03-26 1976-10-01 Nec Corp Photo etching photo mask

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111038A (ja) * 1981-12-23 1983-07-01 Matsushita Electronics Corp フオトマスクの修正方法
JPS59202864A (ja) * 1983-05-04 1984-11-16 Oki Electric Ind Co Ltd ワイヤドツト印字ヘツド
FR2547111A1 (fr) * 1983-05-31 1984-12-07 American Telephone & Telegraph Procede de correction de masques lithographiques
US4548883A (en) * 1983-05-31 1985-10-22 At&T Bell Laboratories Correction of lithographic masks
DE19856295C2 (de) * 1998-02-27 2002-06-20 Fraunhofer Ges Forschung Verfahren zur Herstellung von Kohlenstoffelektroden und chemischen Feldeffektransistoren sowie dadurch hergestellte Kohlenstoffelektroden und chemische Feldeffektransistoren und deren Verwendung
US6399465B1 (en) * 2000-02-24 2002-06-04 United Microelectronics Corp. Method for forming a triple well structure

Also Published As

Publication number Publication date
JPS6159506B2 (enrdf_load_stackoverflow) 1986-12-16

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