ATE49678T1 - Photoresistbelichtungsverfahren und geraet unter verwendung eines elektronenstrahls, dessen energie und ladung gesteuert werden. - Google Patents
Photoresistbelichtungsverfahren und geraet unter verwendung eines elektronenstrahls, dessen energie und ladung gesteuert werden.Info
- Publication number
- ATE49678T1 ATE49678T1 AT85304167T AT85304167T ATE49678T1 AT E49678 T1 ATE49678 T1 AT E49678T1 AT 85304167 T AT85304167 T AT 85304167T AT 85304167 T AT85304167 T AT 85304167T AT E49678 T1 ATE49678 T1 AT E49678T1
- Authority
- AT
- Austria
- Prior art keywords
- electron beam
- photoresist
- charge
- controlled
- energy
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31793—Problems associated with lithography
- H01J2237/31796—Problems associated with lithography affecting resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/620,510 US4576884A (en) | 1984-06-14 | 1984-06-14 | Method and apparatus for exposing photoresist by using an electron beam and controlling its voltage and charge |
EP85304167A EP0165055B1 (de) | 1984-06-14 | 1985-06-12 | Photoresistbelichtungsverfahren und Gerät unter Verwendung eines Elektronenstrahls, dessen Energie und Ladung gesteuert werden |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE49678T1 true ATE49678T1 (de) | 1990-02-15 |
Family
ID=24486252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT85304167T ATE49678T1 (de) | 1984-06-14 | 1985-06-12 | Photoresistbelichtungsverfahren und geraet unter verwendung eines elektronenstrahls, dessen energie und ladung gesteuert werden. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4576884A (de) |
EP (1) | EP0165055B1 (de) |
JP (1) | JPS6169123A (de) |
AT (1) | ATE49678T1 (de) |
CA (1) | CA1226075A (de) |
DE (1) | DE3575496D1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4981771A (en) * | 1984-11-02 | 1991-01-01 | Hitachi, Ltd. | Pattern fabricating method |
US5141830A (en) * | 1989-09-20 | 1992-08-25 | Jeol Ltd. | Charged-particle beam lithography method |
US5128849A (en) * | 1989-12-12 | 1992-07-07 | Optex Corpoataion | Optical disk structures for electron trapping optical memory media |
US5195082A (en) * | 1989-12-12 | 1993-03-16 | Optex Corporation | Optical disk structures for electron trapping optical memory media |
US5304441A (en) * | 1992-12-31 | 1994-04-19 | International Business Machines Corporation | Method of optimizing exposure of photoresist by patterning as a function of thermal modeling |
JP2565121B2 (ja) * | 1993-12-14 | 1996-12-18 | 日本電気株式会社 | 電子線直接描画方法 |
JP3431387B2 (ja) * | 1996-03-14 | 2003-07-28 | 株式会社東芝 | 露光強度分布表示方法とマスクパターン編集装置 |
US6153531A (en) * | 1997-12-22 | 2000-11-28 | Philips Electronics North America Corporation | Method for preventing electrochemical erosion of interconnect structures |
US5928968A (en) | 1997-12-22 | 1999-07-27 | Vlsi Technology, Inc. | Semiconductor pressure transducer structures and methods for making the same |
US6077762A (en) * | 1997-12-22 | 2000-06-20 | Vlsi Technology, Inc. | Method and apparatus for rapidly discharging plasma etched interconnect structures |
US6093658A (en) * | 1997-12-22 | 2000-07-25 | Philips Electronics North America Corporation | Method for making reliable interconnect structures |
US5968710A (en) * | 1998-02-19 | 1999-10-19 | Micron Technology, Inc. | Controlled removal of electron beam curable coatings and articles formed thereby |
US6472123B1 (en) * | 2000-05-15 | 2002-10-29 | Micron Technology, Inc. | Multiple pass write method and reticle |
JP4181561B2 (ja) * | 2005-05-12 | 2008-11-19 | 松下電器産業株式会社 | 半導体加工方法および加工装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1047390A (de) * | 1963-05-20 | 1900-01-01 | ||
US3259898A (en) * | 1964-02-17 | 1966-07-05 | Lab For Electronics Inc | Doppler radar system |
US3539401A (en) * | 1966-05-25 | 1970-11-10 | Matsushita Electric Ind Co Ltd | Method of manufacturing mechano-electrical transducer |
US3507709A (en) * | 1967-09-15 | 1970-04-21 | Hughes Aircraft Co | Method of irradiating dielectriccoated semiconductor bodies with low energy electrons |
DE1614635A1 (de) * | 1967-10-23 | 1970-03-26 | Siemens Ag | Verfahren zum Herstellen von Fotolackmasken fuer Halbleiterzwecke |
US3536547A (en) * | 1968-03-25 | 1970-10-27 | Bell Telephone Labor Inc | Plasma deposition of oxide coatings on silicon and electron bombardment of portions thereof to be etched selectively |
US3737347A (en) * | 1970-02-26 | 1973-06-05 | Fairchild Camera Instr Co | Graded impurity profile in epitaxial films to improve integrated circuit performance |
US3875416A (en) * | 1970-06-30 | 1975-04-01 | Texas Instruments Inc | Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby |
IE39611B1 (en) * | 1973-08-14 | 1978-11-22 | Siemens Ag | Improvements in or relating to two-phase charge coupled devices |
US3950187A (en) * | 1974-11-15 | 1976-04-13 | Simulation Physics, Inc. | Method and apparatus involving pulsed electron beam processing of semiconductor devices |
GB1534896A (en) * | 1975-05-19 | 1978-12-06 | Itt | Direct metal contact to buried layer |
US4082958A (en) * | 1975-11-28 | 1978-04-04 | Simulation Physics, Inc. | Apparatus involving pulsed electron beam processing of semiconductor devices |
US4232439A (en) * | 1976-11-30 | 1980-11-11 | Vlsi Technology Research Association | Masking technique usable in manufacturing semiconductor devices |
JPS53121574A (en) * | 1977-03-31 | 1978-10-24 | Cho Lsi Gijutsu Kenkyu Kumiai | Electron beam exposing device |
US4350866A (en) * | 1977-10-11 | 1982-09-21 | Fujitsu Limited | Discharge device and method for use in processing semiconductor devices |
US4302530A (en) * | 1977-12-08 | 1981-11-24 | University Of Pennsylvania | Method for making substance-sensitive electrical structures by processing substance-sensitive photoresist material |
US4348804A (en) * | 1978-07-12 | 1982-09-14 | Vlsi Technology Research Association | Method of fabricating an integrated circuit device utilizing electron beam irradiation and selective oxidation |
JPS5580318A (en) * | 1978-12-12 | 1980-06-17 | Fujitsu Ltd | Electron-beam exposure |
US4383026A (en) * | 1979-05-31 | 1983-05-10 | Bell Telephone Laboratories, Incorporated | Accelerated particle lithographic processing and articles so produced |
JPS56111220A (en) * | 1980-01-23 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Electron beam exposuring device |
US4308586A (en) * | 1980-05-02 | 1981-12-29 | Nanometrics, Incorporated | Method for the precise determination of photoresist exposure time |
JPS5851514A (ja) * | 1981-09-22 | 1983-03-26 | Toshiba Corp | ウエハ露光方法及びその装置 |
JPS58159328A (ja) * | 1982-03-17 | 1983-09-21 | Toshiba Corp | レジストパタ−ン形成方法 |
JPS58192327A (ja) * | 1982-05-06 | 1983-11-09 | Toshiba Corp | レジストパタ−ン形成方法 |
-
1984
- 1984-06-14 US US06/620,510 patent/US4576884A/en not_active Expired - Fee Related
-
1985
- 1985-06-12 CA CA000483787A patent/CA1226075A/en not_active Expired
- 1985-06-12 AT AT85304167T patent/ATE49678T1/de active
- 1985-06-12 DE DE8585304167T patent/DE3575496D1/de not_active Expired - Fee Related
- 1985-06-12 EP EP85304167A patent/EP0165055B1/de not_active Expired - Lifetime
- 1985-06-14 JP JP60128391A patent/JPS6169123A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US4576884A (en) | 1986-03-18 |
JPS6169123A (ja) | 1986-04-09 |
DE3575496D1 (de) | 1990-02-22 |
EP0165055B1 (de) | 1990-01-17 |
EP0165055A3 (en) | 1987-09-23 |
EP0165055A2 (de) | 1985-12-18 |
CA1226075A (en) | 1987-08-25 |
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