JPS5638828A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5638828A
JPS5638828A JP11501779A JP11501779A JPS5638828A JP S5638828 A JPS5638828 A JP S5638828A JP 11501779 A JP11501779 A JP 11501779A JP 11501779 A JP11501779 A JP 11501779A JP S5638828 A JPS5638828 A JP S5638828A
Authority
JP
Japan
Prior art keywords
laser beam
heat oxidation
region
irradiating
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11501779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS639371B2 (enrdf_load_stackoverflow
Inventor
Seiji Kawato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP11501779A priority Critical patent/JPS5638828A/ja
Publication of JPS5638828A publication Critical patent/JPS5638828A/ja
Publication of JPS639371B2 publication Critical patent/JPS639371B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP11501779A 1979-09-07 1979-09-07 Manufacture of semiconductor device Granted JPS5638828A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11501779A JPS5638828A (en) 1979-09-07 1979-09-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11501779A JPS5638828A (en) 1979-09-07 1979-09-07 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5638828A true JPS5638828A (en) 1981-04-14
JPS639371B2 JPS639371B2 (enrdf_load_stackoverflow) 1988-02-29

Family

ID=14652182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11501779A Granted JPS5638828A (en) 1979-09-07 1979-09-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5638828A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136332A (en) * 1981-02-17 1982-08-23 Matsushita Electric Ind Co Ltd Semiconductor device
JPS57136334A (en) * 1981-02-18 1982-08-23 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS59189965U (ja) * 1983-06-03 1984-12-17 ウツエバルブ株式会社 低差圧リフト逆止弁のチヤタリング防止装置
JPS61220341A (ja) * 1985-03-26 1986-09-30 Nippon Telegr & Teleph Corp <Ntt> 半導体材料特性の制御方法
JPS61220339A (ja) * 1985-03-26 1986-09-30 Nippon Telegr & Teleph Corp <Ntt> 半導体材料特性の制御方法
JPS61220340A (ja) * 1985-03-26 1986-09-30 Nippon Telegr & Teleph Corp <Ntt> 半導体素子の製造方法
US4994399A (en) * 1989-05-16 1991-02-19 Fujitsu Limited Method of gettering heavy-metal impurities from silicon substrates by laser-assisted intrinsic gettering
JP2009260313A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP2010245316A (ja) * 2009-04-07 2010-10-28 Sumco Corp エピタキシャルウェーハの製造方法
JP2012134516A (ja) * 2006-07-27 2012-07-12 Siltronic Ag 単結晶半導体ウェーハの製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7493465B2 (ja) 2021-01-07 2024-05-31 株式会社ディスコ 加工装置及び被加工物の搬出方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136332A (en) * 1981-02-17 1982-08-23 Matsushita Electric Ind Co Ltd Semiconductor device
JPS57136334A (en) * 1981-02-18 1982-08-23 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS59189965U (ja) * 1983-06-03 1984-12-17 ウツエバルブ株式会社 低差圧リフト逆止弁のチヤタリング防止装置
JPS61220341A (ja) * 1985-03-26 1986-09-30 Nippon Telegr & Teleph Corp <Ntt> 半導体材料特性の制御方法
JPS61220339A (ja) * 1985-03-26 1986-09-30 Nippon Telegr & Teleph Corp <Ntt> 半導体材料特性の制御方法
JPS61220340A (ja) * 1985-03-26 1986-09-30 Nippon Telegr & Teleph Corp <Ntt> 半導体素子の製造方法
US4994399A (en) * 1989-05-16 1991-02-19 Fujitsu Limited Method of gettering heavy-metal impurities from silicon substrates by laser-assisted intrinsic gettering
JP2012134516A (ja) * 2006-07-27 2012-07-12 Siltronic Ag 単結晶半導体ウェーハの製造方法
JP2009260313A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP2016119490A (ja) * 2008-03-26 2016-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9633892B2 (en) 2008-03-26 2017-04-25 Semiconductor Energy Laboratory Co., Ltd Method for manufacturing SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced and method for manufacturing semiconductor device
JP2010245316A (ja) * 2009-04-07 2010-10-28 Sumco Corp エピタキシャルウェーハの製造方法

Also Published As

Publication number Publication date
JPS639371B2 (enrdf_load_stackoverflow) 1988-02-29

Similar Documents

Publication Publication Date Title
JPS5638828A (en) Manufacture of semiconductor device
JPS5618430A (en) Manufacture of semiconductor element
JPS6267834A (ja) レ−ザ処理方法
JPS57155726A (en) Manufacture of semiconductor device
JPS59124136A (ja) 半導体ウエハの処理方法
JPH02849B2 (enrdf_load_stackoverflow)
JPS5717125A (en) Manufacture of semiconductor device
JPS5737830A (en) Manufacture of semiconductor device
JPS6125214B2 (enrdf_load_stackoverflow)
JPS5723217A (en) Manufacture of semiconductor device
JPS5721825A (en) Increasing method for gettering effect due to internal defect in semiconductor substrate
JPH0314251A (ja) シリコン半導体基板の評価方法
JPS5683930A (en) Production of semiconductor device
JPS6257103B2 (enrdf_load_stackoverflow)
JPS57164532A (en) Gettering method
JPS63108728A (ja) 半導体基板の裏面歪付け方法
JP2681112B2 (ja) 半導体デバイス用シリコン基板の製造方法
JPS624316A (ja) 半導体装置のアニ−ル方法
JPS60216555A (ja) 半導体装置の製造方法
JPS60157228A (ja) 半導体ウエハ−
JPS6116530A (ja) 半導体装置の製造方法
JPS59117112A (ja) 不純物拡散方法およびその装置
JPS62238629A (ja) 半導体基板の製造方法
JPS5680125A (en) Formation of monocrystalline semiconductor film
JPS56157019A (en) Manufacture of substrate for semiconductor device