JPS6257103B2 - - Google Patents
Info
- Publication number
- JPS6257103B2 JPS6257103B2 JP55048084A JP4808480A JPS6257103B2 JP S6257103 B2 JPS6257103 B2 JP S6257103B2 JP 55048084 A JP55048084 A JP 55048084A JP 4808480 A JP4808480 A JP 4808480A JP S6257103 B2 JPS6257103 B2 JP S6257103B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- annealing
- film
- present
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4808480A JPS56144544A (en) | 1980-04-14 | 1980-04-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4808480A JPS56144544A (en) | 1980-04-14 | 1980-04-14 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56144544A JPS56144544A (en) | 1981-11-10 |
| JPS6257103B2 true JPS6257103B2 (enrdf_load_stackoverflow) | 1987-11-30 |
Family
ID=12793451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4808480A Granted JPS56144544A (en) | 1980-04-14 | 1980-04-14 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56144544A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5768033A (en) * | 1980-10-16 | 1982-04-26 | Toshiba Corp | Manufacture of semiconductor device |
| JP3066967B2 (ja) * | 1988-05-18 | 2000-07-17 | ソニー株式会社 | 半導体装置の製造方法 |
-
1980
- 1980-04-14 JP JP4808480A patent/JPS56144544A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56144544A (en) | 1981-11-10 |