JPS5637683A - Semiconductor rectifying device - Google Patents

Semiconductor rectifying device

Info

Publication number
JPS5637683A
JPS5637683A JP11321679A JP11321679A JPS5637683A JP S5637683 A JPS5637683 A JP S5637683A JP 11321679 A JP11321679 A JP 11321679A JP 11321679 A JP11321679 A JP 11321679A JP S5637683 A JPS5637683 A JP S5637683A
Authority
JP
Japan
Prior art keywords
layer
regions
type semiconductor
type
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11321679A
Other languages
English (en)
Other versions
JPS617757B2 (ja
Inventor
Yoshihito Amamiya
Takayuki Sugata
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11321679A priority Critical patent/JPS5637683A/ja
Priority to GB8006652A priority patent/GB2050694B/en
Priority to NLAANVRAGE8001226,A priority patent/NL188434C/xx
Priority to DE19803008034 priority patent/DE3008034A1/de
Priority to FR8004965A priority patent/FR2456389B1/fr
Priority to CA000347000A priority patent/CA1150417A/en
Publication of JPS5637683A publication Critical patent/JPS5637683A/ja
Priority to US06/512,942 priority patent/US4587547A/en
Publication of JPS617757B2 publication Critical patent/JPS617757B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP11321679A 1979-05-07 1979-09-04 Semiconductor rectifying device Granted JPS5637683A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP11321679A JPS5637683A (en) 1979-09-04 1979-09-04 Semiconductor rectifying device
GB8006652A GB2050694B (en) 1979-05-07 1980-02-27 Electrode structure for a semiconductor device
NLAANVRAGE8001226,A NL188434C (nl) 1979-05-07 1980-02-29 Elektrodestructuur.
DE19803008034 DE3008034A1 (de) 1979-05-07 1980-03-03 Elektrodenvorrichtung fuer eine halbleitervorrichtung
FR8004965A FR2456389B1 (fr) 1979-05-07 1980-03-05 Structure d'electrodes pour dispositifs semi-conducteurs
CA000347000A CA1150417A (en) 1979-05-07 1980-03-05 Electrode structure for a semiconductor device
US06/512,942 US4587547A (en) 1979-05-07 1983-07-12 Electrode structure for a semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11321679A JPS5637683A (en) 1979-09-04 1979-09-04 Semiconductor rectifying device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP14140185A Division JPS6139575A (ja) 1985-06-27 1985-06-27 半導体整流装置

Publications (2)

Publication Number Publication Date
JPS5637683A true JPS5637683A (en) 1981-04-11
JPS617757B2 JPS617757B2 (ja) 1986-03-08

Family

ID=14606506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11321679A Granted JPS5637683A (en) 1979-05-07 1979-09-04 Semiconductor rectifying device

Country Status (1)

Country Link
JP (1) JPS5637683A (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074582A (ja) * 1983-08-08 1985-04-26 ゼネラル・エレクトリツク・カンパニイ ピンチ整流器
JPH01501030A (ja) * 1986-09-30 1989-04-06 オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト アノード側ｐ領域と、隣接する低ドーピングされたｎベース領域とを有する半導体構成素子
JPH01270348A (ja) * 1988-04-22 1989-10-27 Sanken Electric Co Ltd ショットキバリア半導体装置
JPH02151067A (ja) * 1988-12-02 1990-06-11 Toshiba Corp 半導体装置
US6299576B1 (en) 1998-02-16 2001-10-09 Asahi Kogaku Kogyo Kabushiki Kaisha Assist tool for inserting a treatment tool into an endoscope, and a treatment tool to be used in the same
JP2003051601A (ja) * 2001-08-03 2003-02-21 Fuji Electric Co Ltd 半導体装置
WO2006112291A1 (ja) * 2005-04-14 2006-10-26 Rohm Co., Ltd. 半導体装置
JP2012142590A (ja) * 2005-12-27 2012-07-26 Qspeed Semiconductor Inc 超高速リカバリダイオード
US9253832B2 (en) 2010-02-10 2016-02-02 Power Integrations, Inc. Power supply circuit with a control terminal for different functional modes of operation
US9401660B2 (en) 2009-10-06 2016-07-26 Power Integrations, Inc. Monolithic AC/DC converter for generating DC supply voltage
WO2017149607A1 (ja) * 2016-02-29 2017-09-08 三菱電機株式会社 半導体装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63190704U (ja) * 1987-05-27 1988-12-08
JP2014063980A (ja) 2012-08-30 2014-04-10 Toshiba Corp 半導体装置

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074582A (ja) * 1983-08-08 1985-04-26 ゼネラル・エレクトリツク・カンパニイ ピンチ整流器
US4641174A (en) * 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
JPH0370907B2 (ja) * 1983-08-08 1991-11-11 Gen Electric
JPH01501030A (ja) * 1986-09-30 1989-04-06 オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト アノード側ｐ領域と、隣接する低ドーピングされたｎベース領域とを有する半導体構成素子
JPH01270348A (ja) * 1988-04-22 1989-10-27 Sanken Electric Co Ltd ショットキバリア半導体装置
JPH02151067A (ja) * 1988-12-02 1990-06-11 Toshiba Corp 半導体装置
US5017976A (en) * 1988-12-02 1991-05-21 Kabushiki Kaisha Toshiba Semiconductor device having intermediate layer for pinching off conductive path during reverse bias application
US6299576B1 (en) 1998-02-16 2001-10-09 Asahi Kogaku Kogyo Kabushiki Kaisha Assist tool for inserting a treatment tool into an endoscope, and a treatment tool to be used in the same
JP2003051601A (ja) * 2001-08-03 2003-02-21 Fuji Electric Co Ltd 半導体装置
WO2006112291A1 (ja) * 2005-04-14 2006-10-26 Rohm Co., Ltd. 半導体装置
JP2006295062A (ja) * 2005-04-14 2006-10-26 Rohm Co Ltd 半導体装置
US7535075B2 (en) 2005-04-14 2009-05-19 Rohm Co., Ltd. Semiconductor device
JP2012142590A (ja) * 2005-12-27 2012-07-26 Qspeed Semiconductor Inc 超高速リカバリダイオード
US9401660B2 (en) 2009-10-06 2016-07-26 Power Integrations, Inc. Monolithic AC/DC converter for generating DC supply voltage
US9253832B2 (en) 2010-02-10 2016-02-02 Power Integrations, Inc. Power supply circuit with a control terminal for different functional modes of operation
WO2017149607A1 (ja) * 2016-02-29 2017-09-08 三菱電機株式会社 半導体装置
JPWO2017149607A1 (ja) * 2016-02-29 2018-10-04 三菱電機株式会社 半導体装置
US10355142B2 (en) 2016-02-29 2019-07-16 Mitsubishi Electric Corporation Semiconductor device

Also Published As

Publication number Publication date
JPS617757B2 (ja) 1986-03-08

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