JPS5627969A - Mos semiconductor device - Google Patents

Mos semiconductor device

Info

Publication number
JPS5627969A
JPS5627969A JP10399579A JP10399579A JPS5627969A JP S5627969 A JPS5627969 A JP S5627969A JP 10399579 A JP10399579 A JP 10399579A JP 10399579 A JP10399579 A JP 10399579A JP S5627969 A JPS5627969 A JP S5627969A
Authority
JP
Japan
Prior art keywords
source
channel length
contact
semiconductor device
surge input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10399579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6313350B2 (enrdf_load_stackoverflow
Inventor
Tatsu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10399579A priority Critical patent/JPS5627969A/ja
Publication of JPS5627969A publication Critical patent/JPS5627969A/ja
Publication of JPS6313350B2 publication Critical patent/JPS6313350B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP10399579A 1979-08-17 1979-08-17 Mos semiconductor device Granted JPS5627969A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10399579A JPS5627969A (en) 1979-08-17 1979-08-17 Mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10399579A JPS5627969A (en) 1979-08-17 1979-08-17 Mos semiconductor device

Publications (2)

Publication Number Publication Date
JPS5627969A true JPS5627969A (en) 1981-03-18
JPS6313350B2 JPS6313350B2 (enrdf_load_stackoverflow) 1988-03-25

Family

ID=14368871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10399579A Granted JPS5627969A (en) 1979-08-17 1979-08-17 Mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS5627969A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5990958A (ja) * 1982-11-16 1984-05-25 Nec Corp 半導体装置
US6504216B1 (en) * 2000-04-19 2003-01-07 United Microelectronics Corp. Electrostatic discharge protective circuit
JP2007294939A (ja) * 2006-03-31 2007-11-08 Oki Electric Ind Co Ltd 半導体装置
JP2015141993A (ja) * 2014-01-28 2015-08-03 ルネサスエレクトロニクス株式会社 半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5990958A (ja) * 1982-11-16 1984-05-25 Nec Corp 半導体装置
US6504216B1 (en) * 2000-04-19 2003-01-07 United Microelectronics Corp. Electrostatic discharge protective circuit
JP2007294939A (ja) * 2006-03-31 2007-11-08 Oki Electric Ind Co Ltd 半導体装置
JP2015141993A (ja) * 2014-01-28 2015-08-03 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
JPS6313350B2 (enrdf_load_stackoverflow) 1988-03-25

Similar Documents

Publication Publication Date Title
EP0848425A3 (en) Semiconductor device including protection means
JPS5627969A (en) Mos semiconductor device
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS5685851A (en) Complementary mos type semiconductor device
JPS57133677A (en) Semiconductor integrated circuit device
JPS5772388A (en) Junction type field-effect semiconductor device and its manufacdure
JPS56165358A (en) Semiconductor device
JPS56150858A (en) Semiconductor device and manufacture thereof
JPS56108267A (en) Insulated-gate field-effect semiconductor device
JPS57143853A (en) Semiconductor device
JPS5662372A (en) Junction type field effect semiconductor device
JPS57100764A (en) Semiconductor device
JPS5489583A (en) Junction type field effect transistor device
JPS5771183A (en) Junction-type field effect transistor
JPS56148861A (en) Field effect semiconductor device
JPS568882A (en) High dielectric strength field effect semiconductor device
JPS56133870A (en) Mos field effect semiconductor device with high breakdown voltage
JPS57198662A (en) Field effect transistor
JPS5723271A (en) Field effect transistor
JPS6461060A (en) Semiconductor device
JPS55108773A (en) Insulating gate type field effect transistor
JPS56133871A (en) Mos field effect semiconductor device with high breakdown voltage
JPS5780777A (en) Semiconductor device
JPS57190365A (en) Junction type field effect transistor
JPS55160455A (en) Manufacture of insulated gate type field effect semiconductor device