JPS5623780A - Manufacture of thin film transistor - Google Patents

Manufacture of thin film transistor

Info

Publication number
JPS5623780A
JPS5623780A JP9837079A JP9837079A JPS5623780A JP S5623780 A JPS5623780 A JP S5623780A JP 9837079 A JP9837079 A JP 9837079A JP 9837079 A JP9837079 A JP 9837079A JP S5623780 A JPS5623780 A JP S5623780A
Authority
JP
Japan
Prior art keywords
electrode
electrodes
width
consisted
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9837079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6146068B2 (enrdf_load_stackoverflow
Inventor
Yutaka Takato
Hirosaku Nonomura
Sadatoshi Takechi
Hisashi Kamiide
Tomio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP9837079A priority Critical patent/JPS5623780A/ja
Priority to DE3028718A priority patent/DE3028718C2/de
Priority to US06/173,818 priority patent/US4404578A/en
Priority to GB8025044A priority patent/GB2056770B/en
Publication of JPS5623780A publication Critical patent/JPS5623780A/ja
Priority to GB08316196A priority patent/GB2126779B/en
Priority to GB08316195A priority patent/GB2127216B/en
Publication of JPS6146068B2 publication Critical patent/JPS6146068B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs

Landscapes

  • Non-Volatile Memory (AREA)
JP9837079A 1979-07-31 1979-07-31 Manufacture of thin film transistor Granted JPS5623780A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP9837079A JPS5623780A (en) 1979-07-31 1979-07-31 Manufacture of thin film transistor
DE3028718A DE3028718C2 (de) 1979-07-31 1980-07-29 Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung
US06/173,818 US4404578A (en) 1979-07-31 1980-07-30 Structure of thin film transistors
GB8025044A GB2056770B (en) 1979-07-31 1980-07-31 Thin film transistors
GB08316196A GB2126779B (en) 1979-07-31 1983-06-14 Thin-film transistor
GB08316195A GB2127216B (en) 1979-07-31 1983-06-14 Improved s of thin film transistors and manufacture method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9837079A JPS5623780A (en) 1979-07-31 1979-07-31 Manufacture of thin film transistor

Publications (2)

Publication Number Publication Date
JPS5623780A true JPS5623780A (en) 1981-03-06
JPS6146068B2 JPS6146068B2 (enrdf_load_stackoverflow) 1986-10-11

Family

ID=14217985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9837079A Granted JPS5623780A (en) 1979-07-31 1979-07-31 Manufacture of thin film transistor

Country Status (1)

Country Link
JP (1) JPS5623780A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867066A (ja) * 1981-10-16 1983-04-21 Semiconductor Energy Lab Co Ltd 絶緑ゲート型電界効果半導体装置の作製方法
JPS58134476A (ja) * 1982-02-05 1983-08-10 Mitsubishi Electric Corp 薄膜トランジスタ
JPS58190063A (ja) * 1982-04-30 1983-11-05 Seiko Epson Corp 透過型液晶表示パネル用薄膜トランジスタ
JPS61161764A (ja) * 1985-01-11 1986-07-22 Nec Corp 薄膜トランジスタの製造方法
JPS6298883U (enrdf_load_stackoverflow) * 1985-12-12 1987-06-24
JPS6298884U (enrdf_load_stackoverflow) * 1985-12-12 1987-06-24
JPH039190A (ja) * 1989-06-07 1991-01-17 Kawasaki Steel Corp 積層スパイラル管
JPH0659716B2 (ja) * 1985-06-11 1994-08-10 アンステイテイ フランセ−ズ ド ペトロ−ル 流体の輸送に使用し、輸送する流体の滲出を抑制できる導管
WO2019187070A1 (ja) * 2018-03-30 2019-10-03 シャープ株式会社 トランジスタおよび表示装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5867066A (ja) * 1981-10-16 1983-04-21 Semiconductor Energy Lab Co Ltd 絶緑ゲート型電界効果半導体装置の作製方法
JPS58134476A (ja) * 1982-02-05 1983-08-10 Mitsubishi Electric Corp 薄膜トランジスタ
JPS58190063A (ja) * 1982-04-30 1983-11-05 Seiko Epson Corp 透過型液晶表示パネル用薄膜トランジスタ
JPS61161764A (ja) * 1985-01-11 1986-07-22 Nec Corp 薄膜トランジスタの製造方法
JPH0659716B2 (ja) * 1985-06-11 1994-08-10 アンステイテイ フランセ−ズ ド ペトロ−ル 流体の輸送に使用し、輸送する流体の滲出を抑制できる導管
JPS6298883U (enrdf_load_stackoverflow) * 1985-12-12 1987-06-24
JPS6298884U (enrdf_load_stackoverflow) * 1985-12-12 1987-06-24
JPH039190A (ja) * 1989-06-07 1991-01-17 Kawasaki Steel Corp 積層スパイラル管
WO2019187070A1 (ja) * 2018-03-30 2019-10-03 シャープ株式会社 トランジスタおよび表示装置

Also Published As

Publication number Publication date
JPS6146068B2 (enrdf_load_stackoverflow) 1986-10-11

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