JPS56169359A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS56169359A
JPS56169359A JP7351980A JP7351980A JPS56169359A JP S56169359 A JPS56169359 A JP S56169359A JP 7351980 A JP7351980 A JP 7351980A JP 7351980 A JP7351980 A JP 7351980A JP S56169359 A JPS56169359 A JP S56169359A
Authority
JP
Japan
Prior art keywords
type
mask
integrated circuit
steps
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7351980A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0427707B2 (enrdf_load_stackoverflow
Inventor
Koji Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP7351980A priority Critical patent/JPS56169359A/ja
Publication of JPS56169359A publication Critical patent/JPS56169359A/ja
Publication of JPH0427707B2 publication Critical patent/JPH0427707B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP7351980A 1980-05-30 1980-05-30 Semiconductor integrated circuit device Granted JPS56169359A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7351980A JPS56169359A (en) 1980-05-30 1980-05-30 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7351980A JPS56169359A (en) 1980-05-30 1980-05-30 Semiconductor integrated circuit device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP58226204A Division JPS59188162A (ja) 1983-11-29 1983-11-29 半導体集積回路装置
JP8545890A Division JPH0316166A (ja) 1990-03-31 1990-03-31 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS56169359A true JPS56169359A (en) 1981-12-26
JPH0427707B2 JPH0427707B2 (enrdf_load_stackoverflow) 1992-05-12

Family

ID=13520567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7351980A Granted JPS56169359A (en) 1980-05-30 1980-05-30 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS56169359A (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57206064A (en) * 1981-06-15 1982-12-17 Toshiba Corp Semiconductor device and manufacturing method therefor
JPS57206063A (en) * 1981-06-15 1982-12-17 Toshiba Corp Semiconductor substrate and manufacture therefor
JPS58170048A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体装置
JPS58182863A (ja) * 1982-04-21 1983-10-25 Hitachi Ltd 半導体装置
JPS58225663A (ja) * 1982-06-23 1983-12-27 Toshiba Corp 半導体装置の製造方法
JPS6080267A (ja) * 1983-10-07 1985-05-08 Toshiba Corp 半導体集積回路装置の製造方法
JPS6097661A (ja) * 1983-11-02 1985-05-31 Hitachi Ltd 半導体集積回路装置
JPS60101963A (ja) * 1983-11-08 1985-06-06 Iwatsu Electric Co Ltd 相補型電界効果トランジスタの製造方法
JPS60218866A (ja) * 1984-04-13 1985-11-01 Mitsubishi Electric Corp 相補型ｍｏｓ半導体装置
JPS6325964A (ja) * 1987-02-13 1988-02-03 Seiko Epson Corp Ｃ−ｍｏｓ型半導体集積回路装置
JPS63278265A (ja) * 1986-11-04 1988-11-15 サムスン　エレクトロニクス　カンパニー　リミテッド 半導体ＢｉＣＭＯＳ装置の製造方法
JPS63301545A (ja) * 1987-05-30 1988-12-08 Ricoh Co Ltd 半導体集積回路装置の製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57206064A (en) * 1981-06-15 1982-12-17 Toshiba Corp Semiconductor device and manufacturing method therefor
JPS57206063A (en) * 1981-06-15 1982-12-17 Toshiba Corp Semiconductor substrate and manufacture therefor
JPS58170048A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体装置
JPS58182863A (ja) * 1982-04-21 1983-10-25 Hitachi Ltd 半導体装置
JPS58225663A (ja) * 1982-06-23 1983-12-27 Toshiba Corp 半導体装置の製造方法
JPS6080267A (ja) * 1983-10-07 1985-05-08 Toshiba Corp 半導体集積回路装置の製造方法
JPS6097661A (ja) * 1983-11-02 1985-05-31 Hitachi Ltd 半導体集積回路装置
JPS60101963A (ja) * 1983-11-08 1985-06-06 Iwatsu Electric Co Ltd 相補型電界効果トランジスタの製造方法
JPS60218866A (ja) * 1984-04-13 1985-11-01 Mitsubishi Electric Corp 相補型ｍｏｓ半導体装置
JPS63278265A (ja) * 1986-11-04 1988-11-15 サムスン　エレクトロニクス　カンパニー　リミテッド 半導体ＢｉＣＭＯＳ装置の製造方法
JPS6325964A (ja) * 1987-02-13 1988-02-03 Seiko Epson Corp Ｃ−ｍｏｓ型半導体集積回路装置
JPS63301545A (ja) * 1987-05-30 1988-12-08 Ricoh Co Ltd 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
JPH0427707B2 (enrdf_load_stackoverflow) 1992-05-12

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