JPS56153773A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS56153773A
JPS56153773A JP4300281A JP4300281A JPS56153773A JP S56153773 A JPS56153773 A JP S56153773A JP 4300281 A JP4300281 A JP 4300281A JP 4300281 A JP4300281 A JP 4300281A JP S56153773 A JPS56153773 A JP S56153773A
Authority
JP
Japan
Prior art keywords
regions
source
circuit
sections
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4300281A
Other languages
Japanese (ja)
Other versions
JPS6310908B2 (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP4300281A priority Critical patent/JPS56153773A/en
Publication of JPS56153773A publication Critical patent/JPS56153773A/en
Publication of JPS6310908B2 publication Critical patent/JPS6310908B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Abstract

PURPOSE:To obtain a circuit having performance characteristics of various kinds by containing an electrostatic induction FET formed by connecting source electrodes and source semiconductor regions through the opening sections of a conduction type reverse to the source semiconductor regions in the circuit. CONSTITUTION:Source high impurity density regions 17, 17' consist of sections directly contacting with source electrodes 12 and sections contacting through insulating films 18. Series resistance in the sources can be increased by forming P type regions 21 among the electrodes 12 and the regions 17, 17'. The regions 21 need not be contacted with the regions 17, 17', and may be made up to an N type low impurity density region 15 between the regions 17, 17' at places, and resistance can be controlled according to the dimensions, depth, intervals, etc. or the sizes of windows. Thus, the amount of negative feedback of an electrostatic induction FET can be controlled, and a circuit having performance characteristics of various kinds can be obtained by properly controlling the feedback amount.
JP4300281A 1981-03-23 1981-03-23 Semiconductor integrated circuit device Granted JPS56153773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4300281A JPS56153773A (en) 1981-03-23 1981-03-23 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4300281A JPS56153773A (en) 1981-03-23 1981-03-23 Semiconductor integrated circuit device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP16037476A Division JPS5382182A (en) 1976-12-27 1976-12-27 Fet transistor circuit and semiconductor ic

Publications (2)

Publication Number Publication Date
JPS56153773A true JPS56153773A (en) 1981-11-27
JPS6310908B2 JPS6310908B2 (en) 1988-03-10

Family

ID=12651789

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4300281A Granted JPS56153773A (en) 1981-03-23 1981-03-23 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS56153773A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5078284A (en) * 1973-11-09 1975-06-26
JPS50120780A (en) * 1974-03-08 1975-09-22

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5078284A (en) * 1973-11-09 1975-06-26
JPS50120780A (en) * 1974-03-08 1975-09-22

Also Published As

Publication number Publication date
JPS6310908B2 (en) 1988-03-10

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