JPS56152275A - Thin film type solar cell - Google Patents

Thin film type solar cell

Info

Publication number
JPS56152275A
JPS56152275A JP5426880A JP5426880A JPS56152275A JP S56152275 A JPS56152275 A JP S56152275A JP 5426880 A JP5426880 A JP 5426880A JP 5426880 A JP5426880 A JP 5426880A JP S56152275 A JPS56152275 A JP S56152275A
Authority
JP
Japan
Prior art keywords
thin film
layer
resin
generating
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5426880A
Other languages
Japanese (ja)
Inventor
Kenji Nakatani
Mitsuo Asano
Wataru Yamamoto
Hiroshi Okaniwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP5426880A priority Critical patent/JPS56152275A/en
Publication of JPS56152275A publication Critical patent/JPS56152275A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To avoid occurence of the separation at interfaces and cracks in a silicon film and also to prevent the deterioration of photoelectromotive characteristic by a device wherein a surface coating layer comprising organic metal compounds is interposed at the interface between a thin film of resin and laminated layers for generating the photoelectromotive force. CONSTITUTION:The surface coating layer 2 comprising organic metal compounds is interposed at the interface between a flexible thin film of resin 1 having heat- resistance and laminated layers 3-9 for generating the photoelectromotive force. The laminated layers 3-9 for generating the photoelectromotive force comprise a metal layer 3, N type silicon layer 4, I type silicon layer 5, P type silicon layer 6, potential barrier forming layer 7, collecting electrode 8 and nonreflection coating layer 9. The flexible thin film of resin 1 having heat-resistance comprises a high molecular film which is proof against a substrate temperature required for applying the silicon layer, namely a temperature not less than 150 deg.C.
JP5426880A 1980-04-25 1980-04-25 Thin film type solar cell Pending JPS56152275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5426880A JPS56152275A (en) 1980-04-25 1980-04-25 Thin film type solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5426880A JPS56152275A (en) 1980-04-25 1980-04-25 Thin film type solar cell

Publications (1)

Publication Number Publication Date
JPS56152275A true JPS56152275A (en) 1981-11-25

Family

ID=12965820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5426880A Pending JPS56152275A (en) 1980-04-25 1980-04-25 Thin film type solar cell

Country Status (1)

Country Link
JP (1) JPS56152275A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5932178A (en) * 1982-08-18 1984-02-21 Agency Of Ind Science & Technol Solar battery
JPS59117275A (en) * 1982-12-24 1984-07-06 Sanyo Electric Co Ltd Photovoltaic device
JPS6042876A (en) * 1983-08-19 1985-03-07 Masahisa Muroki Cloth-like solar battery
JPH01110453U (en) * 1988-01-20 1989-07-26
JPH02126686A (en) * 1988-11-05 1990-05-15 Taiyo Yuden Co Ltd Amorphous semiconductor solar cell
JPH06314805A (en) * 1993-01-26 1994-11-08 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPH06314808A (en) * 1993-06-21 1994-11-08 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5932178A (en) * 1982-08-18 1984-02-21 Agency Of Ind Science & Technol Solar battery
JPS6322634B2 (en) * 1982-08-18 1988-05-12 Kogyo Gijutsuin
JPS59117275A (en) * 1982-12-24 1984-07-06 Sanyo Electric Co Ltd Photovoltaic device
JPS6042876A (en) * 1983-08-19 1985-03-07 Masahisa Muroki Cloth-like solar battery
JPH0479151B2 (en) * 1983-08-19 1992-12-15 Masahisa Muroki
JPH01110453U (en) * 1988-01-20 1989-07-26
JPH02126686A (en) * 1988-11-05 1990-05-15 Taiyo Yuden Co Ltd Amorphous semiconductor solar cell
JPH06314805A (en) * 1993-01-26 1994-11-08 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPH06314808A (en) * 1993-06-21 1994-11-08 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device

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